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Tuesday 6 June
8:00 - 9:40
TU1E:
Multiscale and Multiphysics Modeling for RF, Microwave, Terahertz and Optical Applications
Chair:
Zhizhang Chen
Chair organization:
Dalhousie University
Co-chair:
Costas Sarris
Co-chair organization:
Univ. of Toronto
Location:
314
Abstract:
Circuit and practical electromagnetic structures, even a simple printed-circuit-board (PCB), may contain electrically complex structures as well as multi-physics effects (e.g. thermal, quantum) that interact with electromagnetic fields. Simulation and optimization of these structures requires special mathematical and numerical treatment, namely multiscale and/or multiphysics modeling. They often pose great challenges because of the complex and interdisciplinary nature of the subject. More specifically, the multiphysics interactions and multiscale computations in time and space have to be addressed in order to have reliable and accurate numerical simulation and optimization results. This focus session is intended to address the emerging issues of the multiphysics and multiscale modeling and optimization that pertain to RF, microwave, terahertz and optical circuits and structures.
Presentations in this
session
TU1E-1 :
A Self-Consistent Integral Equation Framework for Simulating Optically-Active Media
Authors:
Connor Glosser, Carlo Piermarocchi, Balasubramaniam Shanker
Presenter:
Balasubramaniam Shanker, Michigan State Univ., United States
(8:00 - 8:20 )
Abstract
Here we consider a disordered system of interacting quantum dots—nanostructures with applicability in systems ranging from quantum computing to next-generation displays. Quantum dots facilitate absorptive and emissive processes at frequencies over timescales independent of those in the incident radiation; by treating the system semiclassically we maintain the discrete dynamics inherent to quantum objects without resorting to second quantization to describe electromagnetic fields. Our solution proceeds via determination of source wavefunctions through evolution of the differential Liouville equations and evaluation of radiation patterns through integral equation techniques. We employ a highly-tuned predictor-corrector integration scheme to advance the source wavefunctions in time; the polarizations that arise then serve as sources within the integral equations that we use to propagate the field. This coupled solution produces a description of both the quantum and electromagnetic dynamics at each timestep giving rise to lasing effects, non-linear propagation, coupled Rabi oscillations, and other optical phenomena.
TU1E-2 :
An Efficient Algorithm for Simulation of Plasma Beam High-Power Microwave Sources
Authors:
Dong-Yeop Na, Fernando Teixeira, Yuri Omelchenko
Presenter:
Dong-Yeop Na, Ohio State Univ., United States
(8:20 - 8:40 )
Abstract
We discuss a new electromagnetic particle-in-cell algorithm for the simulation of Maxwell-Vlasov equations on unstructured grids. The use of discrete exterior calculus and differential forms of various degrees enables numerical charge conservation from first principles, down to the numerical precision floor. In addition, energy conservation is obtained via a symplectic field update. The algorithm is illustrated for the modeling of high-power microwave devices based on Cerenkov radiation driven by relativistic plasma beams.
TU1E-3 :
Supercomputing-Enabled First-Principles Analysis of Wireless Channels in Real-World Environments
Authors:
Yang Shao, Zhen Peng
Presenter:
Yang Shao, Univ. of New Mexico, United States
(8:40 - 9:00 )
Abstract
Wireless communications are expected to take place in increasingly complicated scenarios, such as dense urban, forest, tunnel and other significant cluttered environments. A key challenge emerging is to understand the physics and characteristics of wireless channels in complex environments, which are critical for the analysis, design, and application of future mobile and wireless communication systems. The objective of this work is to investigate high-resolution, high-performance computational algorithms for extreme-scale channel modeling in real-world environments. The system-level large scene analysis is enabled by the novel, ultra-parallel algorithms on the emerging exascale high-performance computing (HPC) platforms. The results lead to much greater channel model resolution than existing deterministic channel modeling technologies. All relevant propagation mechanisms are accounted for in first-principles. Such a modeling framework will be critical to gaining fundamental physics of wireless propagation channels in real-world scenarios.
TU1E-4 :
3D Unconditionally Stable FDTD Modeling of Micromagnetics and Electrodynamics
Authors:
Zhi Yao, Yuanxun Ethan Wang
Presenter:
Zhi Yao, Univ. of California, Los Angeles, United States
(9:00 - 9:20 )
Abstract
A rigorous yet computationally efficient three-dimensional nu-merical method has been proposed based on modified alternat-ing-direction-implicit (ADI) finite difference time domain meth-ods (FDTD) and it has the capability of modeling the eccentric property of magnetic material being anisotropic, dispersive or nonlinear. The proposed algorithm solves Maxwell’s equations and LLG equations simultaneously, requiring only tridiagonal matrix inversion as in ADI FDTD. The accuracy of the modeling has been validated by the simulated dispersive permeability of a continuous ferrite film with a 1.5 um-thickness, using a time-step size 104 times larger than the Courant limit. The permeability agrees with the theoretical prediction and magneto-static spin wave modes are observed. Moreover, electric current sheet radia-tors close to perfect electrical conductors loaded with 2 um-thick ferrite films are simulated, which exhibit a radiation efficiency 20dB higher than conventional dipole antennas on the same scale.
TU1E-5 :
Two-Dimensional Multiphysics Model of Microwave Sintering
Authors:
Erin Kiley, Vadim Yakovlev
Presenter:
Erin Kiley, Massachusetts College of Liberal Arts, United States
(9:20 - 9:40 )
Abstract
Recently, keen interest has been shown in using microwaves as the heat source for materials manufacturing processes that rely on sintering. We present here a two-dimensional model of microwave sintering that accounts for the chain of physical phenomena that influence the process (i.e., electromagnetics, heat transfer and mechanical deformation), including the dependence of dielectric and thermal properties on the temperature and relative density of the sample. The model relies on finite difference methods for the electromagnetic and thermal models, and a Master Sintering Curve to construct the inverse function for density evolution, and is presented together with its computer implementation as a series of Python scripts, which runs quickly and whose accuracy is demonstrated via comparison to experimental results from literature.
TU1F:
Broadband and Millimeter-Wave Power Amplifiers
Chair:
Charles Campbell
Chair organization:
QORVO, Inc.
Co-chair:
Zoya Popovic
Co-chair organization:
Univ. of Colorado
Location:
315
Abstract:
Broadband amplifiers with bandwidths over an octave to over a decade and implemented in InP, CMOS, GaN, and GaAs are presented. A millimeter-wave W-band PA using a novel tri-gate technology with over 1W of output power is presented.
Presentations in this
session
TU1F-1 :
A 1.5–88 GHz 19.5 dBm Output Power Triple Stacked HBT InP Distributed Amplifier
Authors:
Duy Nguyen, Alexander Stameroff, Anh-Vu Pham
Presenter:
Duy Nguyen, Univ. of California, Davis, United States
(8:00 - 8:20 )
Abstract
We demonstrate a wideband and high power distributed amplifier (DA) using an 0.5 μm indium phosphide (InP) double heterojunction bipolar transistor (HBT) process. For the first time, a triple stack HBT topology is used in an InP DA to achieve high power and high linearity. The 1.2 mm x 0.75 mm fabricated chip exhibits a measured gain of 16 dB, maximum output power of 19.5 dBm and output third order intercept point (OIP3) of 27.5 dBm. The bandwidth covers 1.5 – 88 GHz. This makes the gain-bandwidth product (GBP) 546 GHz. To the best of the authors’ knowledge, this work reports the highest output power and OIP3 over a wide bandwidth among all published distributed amplifiers to date.
TU1F-2 :
A 4–10 GHz Fully-Integrated Stacked GaAs pHEMT Power Amplifier
Authors:
Haifeng Wu, Xuejie Liao, Cetian Wang, Yijun Chen, Yunan Hua, Liulin Hu, Jiping Lv, Wei Tong
Presenter:
Haifeng Wu, Chengdu Ganide Technology, China
(8:20 - 8:40 )
Abstract
A 4-10 GHz fully-integrated power amplifier (PA) is demonstrated using a 0.15-μm GaAs pHEMT process. This PA employs a compact structure with 4-parallel 3-stacked-FET cells to obtain a broadband power performance within a very small chip size. The measurement results of this PA in the frequency range of 4-10 GHz show a gain flatness of 13.5±1.5 dB, a maximum input return loss (S11) of -9 dB, a maximum output return loss (S22) of -7 dB, and a 35-37 dBm output power with the corresponding power added efficiency (PAE) of 25-32%. To the author’s knowledge, this is the first GaAs PA ever reported which covers the frequency range of 4-10 GHz and achieves the combination of output power and instantaneous broadband performance within a chip size of 1.6mm×1.6 mm.
TU1F-3 :
Efficient 2–16 GHz Flat-Gain Stacked Distributed Power Amplifier in 0.13 um CMOS Using Uniform Distributed Topology
Authors:
Mohsin Tarar, Thomas Buecher, Saad Qayyum, Renato Negra
Presenter:
Saad Qayyum, RWTH Aachen Univ.
(8:40 - 9:00 )
Abstract
This work presents the design and implementation of a flat-gain, efficient and wideband stacked distributed power amplifier (SDPA) in 0.13 µm CMOS technology. To get high output swing along with a reasonable gain, a four-transistor stack is utilized in four sections. Voltage alignment at the drain of each device in the stack is obtained by allowing a small AC swing at the gate by voltage division between Cgs and the external gate capacitor. Interstage matching is performed through peaking inductors. Further, the uniform distributed amplifier topology is adopted to control the impedance at each current injecting node from the stack to the artificial drain lines resulting into flat gain. Measured results show at least 10 ± 0.3dB small-signal gain from 2-16 GHz. The SDPA demonstrated a saturated output power of 18 dBm with peak efficiency of 17% and an OIP3 of 22 dBm occupying an area of 0.83 mm2.
TU1F-4 :
A K-Band Transformer Based Power Amplifier With 24.4-dBm Output Power and 28% PAE in 90-nm CMOS Technology
Authors:
Jung-Lin Lin, Yu-Hsuan Lin, Yuan-Hung Hsiao, Huei Wang
Presenter:
Jung-Lin Lin, National Taiwan Univ., Taiwan
(9:00 - 9:20 )
Abstract
A fully integrated K-band transformer based power amplifier with neutralization technique is proposed and fabricated in 90-nm CMOS technology. Several cascode cells are combined together as differential power cells. On-chip transformers and current combing topology are used to combine amplifiers as well as to reduce the problem of output power loss. In order to improve the overall stability, neutralization structure is utilized in the combined cascode cell. The measurement result demonstrates 14.1-dB small-signal gain, saturated power (Psat) of 24.4 dBm, and output 1-dB compression point (OP1dB) of 21.7 dBm at 24 GHz. The peak power added efficiency (PAE) achieved by this PA at 24 GHz is 28%. The chip size is 0.526 mm2 with all pads. To the authors’ knowledge, this circuit presents a superior power and efficiency performance compared with the reported K-band CMOS PAs.
TU1F-5 :
First Demonstration of W-Band Tri-Gate GaN-HEMT Power Amplifier MMIC With 30 dBm Output Power
Authors:
Erdin Ture, Peter Brückner, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rüdiger Quay, Oliver Ambacher
Presenter:
Erdin Ture, Fraunhofer Institute for Applied Solid State Physics, Germany
(9:20 - 9:40 )
Abstract
First-ever realization of a W-band power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) utilizing GaN-based Tri-gate high-electron-mobility transistors (HEMTs) is presented in this paper. Superior device- and circuit-level performances over conventional GaN HEMTs are proven to be empowered through implementation of the novel Tri-gate topology which exhibits a 3-dimensional gate profile. The measurements of the fabricated MMIC yield up to 30.6 dBm (1.15 W) of output power in the frequency range 86–94 GHz with 8% power-added-efficiency (PAE) and more than 12 dB transducer power gain. The achieved results demonstrate the promising potential of Tri-gate GaN technology towards high-performance millimeter-wave PA designs.
TU1G:
3D Printed Waveguides and Packages
Chair:
Telesphor Kamgaing
Chair organization:
Intel Corp.
Co-chair:
Thomas Weller
Co-chair organization:
Univ. of South Florida
Location:
316A
Abstract:
This session will include recent advances in 3D printed waveguides up to W-bands as well as well as additively manufactured MMIC packages and on-chip interconnects.
Presentations in this
session
TU1G-1 :
MMIC Packaging and On-Chip Low-Loss Lateral Interconnection Using Additive Manufacturing and Laser Machining
Authors:
Ramiro Ramirez, Di Lan, Jing Wang, Tom Weller
Presenter:
Ramiro Ramirez, Univ. of South Florida, United States
(8:00 - 8:20 )
Abstract
A new and versatile 3D printed on-chip integration approach with laser machining is demonstrated in this paper for microwave and mm-wave systems . The integration process extends interconnects laterally from a MMIC to a chip carrier. Laser machining techniques are studied and characterized to enhance the 3D printing quality. Specifically, the width of micro-dispensed printed traces is accurately controlled within micrometer range and probe pads are formed by laser cutting to facilitate RF measurement. S-parameters of a distributed amplifier integrated into the package are simulated and measured from 2 to 30 GHz. The overall performance is significantly better than traditional wirebonded QFN package. The attenuation of the microstrip line including interconnects is only 0.2 dB/mm at 20 GHz and return loss with the package is less than 10 dB throughout the operating frequency band
TU1G-2 :
Rapid Prototyping of Low Loss 3D Printed Waveguides for Millimeter-Wave Applications
Authors:
Junyu Shen, Michael Aiken, Morteza Abbasi, Dishit Parekh, Xin Zhao, Michael Dickey, David Ricketts
Presenter:
Junyu Shen, North Carolina State Univ., United States
(8:20 - 8:40 )
Abstract
This paper proposes a rapid-prototyping method for low-loss millimeter-wave hollow waveguides using 3D printing technology. Waveguide models are modified to enhance their mechanical strength, 3D printed with a light-weight photopolymer using a Digital Light Projection (DLP) method. A modified version of copper electroless plating is then used for metallization to achieve very low loss at millimeter waves. To demonstrate, 3D printed waveguides are fabricated for W-band and D-band. The measured insertion loss is between 0.12 dB/in to 0.25 dB/in over the entire W-band, as the best loss performance when compared reported W-band 3D printed waveguides, to the best of authors’ knowledge, and between 0.26 dB/in to 1.01 dB/in over the entire D-band. These results are comparable to commercially-available metal waveguides and show great promise for manufacturing more complex geometries with this technique.
TU1G-3 :
Selective Laser Melting Aluminum Waveguide Attenuation at K-Band
Authors:
Michael Hollenbeck, Karl Warnick, Clinton Cathey, Janos Opra, Robert Smith
Presenter:
Michael Hollenbeck, Optisys, United States
(8:40 - 9:00 )
Abstract
Additive manufacturing allows for fabrication of complex structures that efficiently use a 3D volume of space. Current state of the art metal additive manufacturing methods, particularly Selective Laser Melting (SLM), allow for intricate parts with high mechanical strength but at the cost of increased surface roughness on internal walls. This paper investigates the contribution to loss of the increased surface roughness on a set of SLM WR42 waveguides printed with a standard ALSi10Mg aluminum powder, and compares their attenuation performance to purchased single-piece WR42 waveguides and to an industry-standard method for CNC machining waveguide multi-piece assemblies. Single-piece construction of RF parts produces lower attenuation than multi-piece assembly, and lower surface roughness directly leads to lower attenuation. SLM RF waveguides had better part consistency and comparable or better attenuation compared to CNC waveguides, showing that SLM has reached the point where it can be used in RF waveguide assemblies.
TU1G-4 :
Integration of RF Functionalities in Microwave Waveguide Components Through 3D Metal Printing
Authors:
Oscar Peverini, Mauro Lumia, Giuseppe Addamo, Flaviana Calignano, Giuseppe Virone, Elisa Ambrosio, Diego Manfredi, Riccardo Tascone
Presenter:
Mauro Lumia, National Research Council of Italy, Italy
(9:00 - 9:20 )
Abstract
This work reports on the integration of RF functionalities in microwave waveguide components through the selective laser melting process. A specific integrated component has been developed for the relevant application domain of satellite communications. The component operates in the Ku-K bands and integrates a H-plane bend, a 90-deg twist and ninth-order pass-band filter. The AlSi10Mg prototype manufactured through selective laser melting exhibits significant RF performances (return loss > 20 dB, insertion loss < 0.23 dB, and rejection > 60 dB), while significantly minimizing mass, envelope and mechanical complexity.
TU1G-5 :
Additive Manufactured W-Band Waveguide Components
Authors:
Mike Coffey, Shane Verploegh, Stefan Edstaller, Erich Grossman, Shawn Armstrong, Zoya Popovic
Presenter:
Shane Verploegh, Univ. of Colorado, United States
(9:20 - 9:40 )
Abstract
This paper presents several W-band (75-110 GHz) WR-10 waveguide components fabricated using both direct metal laser sintering (DMLS) and stereolithography (SLA), in aluminum, nickel and copper alloys and metal-coated plastic (MCP). The RF performance and surface roughness are measured, and the loss due to surface roughness quantified. The measured loss at 95 GHz ranges from 0.055 dB/cm for the copper-plated plastic waveguides to 0.37 dB/cm for the nickel alloy. From a loss budget study, it is found that standard models do not accurately predict loss due to surface roughness for very rough surfaces. This paper presents the current state-of-the-art in available additive manufactured (AM) waveguide components at W-band.
TU1H:
Recent Advances in Radar Systems Technology
Chair:
Arne Jacob
Chair organization:
Technical Univ. of Hamburg
Co-chair:
Chris Rodenbeck
Co-chair organization:
Naval Research Laboratory
Location:
316B
Abstract:
Topics include recent advances in Doppler radar along with enhanced construction of W-band technology. Applications like particle detection, snow pack remote sensing and integration of communications with radar will be highlighted.
Presentations in this
session
TU1H-1 :
Obstacle-Free Particle Measurement With a Bistatic CW-Radar
Authors:
Alwin Reinhardt, Alexander Teplyuk, Hendrik Brüns, Michael Höft, Ludger Klinkenbusch
Presenter:
Alwin Reinhardt, Univ. of Kiel, Germany
(8:00 - 8:20 )
Abstract
This paper compares two radar configurations with different antenna systems for measuring particle streams in the near field range. A complex source beam is employed to describe the field characteristics. This new approach is used to derive the associated antenna gain and power patterns and applied in the radar equation for particle streams. We demonstrate how indoor measurements benefit from a bistatic radar configuration and provide measurement results for streams with particles in the micron range.
TU1H-2 :
77-GHz Active Quasi-Circulator Based Doppler Radar With Phase Evaluation for Object Tracking
Authors:
Matthias Porranzl, Christoph Wagner, Herbert Jaeger, Andreas Stelzer
Presenter:
Matthias Porranzl, Johannes Kepler Univ. Linz, Austria
(8:20 - 8:40 )
Abstract
A 77-GHz Doppler shift radar is demonstrated based on an Active Quasi-Circulator (QC) monostatic approach.
The QC system includes a leakage canceler as well as a modulator for time division IQ switching. A flexible decimation chain, implemented in an FPGA, facilitates the use of a low cost ADC with poor SNR performance. By analyzing the drift behavior of the system, the parameters for an appropriate high pass filter can be obtained. The system is capable of measuring Doppler shift frequencies from 0.05Hz up to around 4 kHz. By means of a phase evaluation algorithm, it is possible to observe objects with varying velocities. Finally, the system has been verified with a breathing test, where the depth and the frequency of the breath can be determined accurately.
TU1H-3 :
A Ku-Band CMOS FMCW Radar Transceiver With Ring Oscillator Based Waveform Generation for Snowpack Remote Sensing
Authors:
Yanghyo Kim, Adrian Tang, Kuo-Nan Liou, Thomas Painter, M.C. Frank Chang
Presenter:
Yanghyo Kim, Univ. of California, Los Angeles, United States
(8:40 - 9:00 )
Abstract
This paper presents a Ku-band (14-16 GHz) CMOS frequency modulated continuous-wave (FMCW) radar transceiver developed to measure snow depth for water management purposes and to aid in retrieval of snow water equivalent (SWE). An on-chip direct digital frequency synthesizer (DDFS) and digital-to-analog converter (DAC) digitally generates the chirping waveform which then drives a ring oscillator based Ku-Band phase-locked loop (PLL) to provide the final Ku-band FMCW signal. Employing a ring oscillator as oppose to a tuned inductor based oscillator (LC-VCO) allows the radar to achieve wider chirp bandwidth resulting in a higher axial resolution (7.5cm) which is needed to accurately quantify the snowpack profile. The demonstrated radar chip is fabricated in a 65nm CMOS process, and it consumes 250mW of power under 1.1V supply, making its payload requirements suitable for observations from a small UAV.
TU1H-4 :
Simultaneous Localization and Data-Interrogation Using a 24-GHz Modulated-Reflector FMCW Radar System
Authors:
Werner Scheiblhofer, Reinhard Feger, Andreas Haderer, Stefan Scheiblhofer, Andreas Stelzer
Presenter:
Andreas Haderer, Inras GmbH, Austria
(9:00 - 9:20 )
Abstract
In this paper, the integration of a communication link for a modulated-reflector radar is presented. This kind of radar system is intended to determine the position of multiple semi-passive backscatter reflector nodes, designed to be mounted on different objects of interest. A method to transport information from these objects back to the radar-basestation is sketched, using the available hardware-resources of the nodes. In addition a technique minimizing the influence of this communication link on the localization capability of the system is presented and validated by measurements
TU1H-5 :
Demonstration of an Efficient High Speed Communication Link Based on Regenerative Sampling
Authors:
Christian Carlowitz, Martin Vossiek
Presenter:
Christian Carlowitz, Univ. of Erlangen-Nuremberg, Germany
(9:20 - 9:40 )
Abstract
High-speed communication systems nowadays often face technological limitations, e.g., when operating at very high center frequencies. These scaling issues often result in low single-stage amplifier gain, which makes classic broadband communication architectures, most notably the homodyne transceiver, inefficient in terms of power consumption, implementation size and cost. For the first time, we demonstrate the feasibility of a full transmission system for a completely different architecture that allows escaping the gain limitations. It utilizes regenerative sampling in an oscillator to repetitively amplify CW or pulsed signals with a single low gain amplifier in order to achieve a high overall gain tunable over a large range. In this paper, we demonstrate the successful transmission of 8-PSK modulated pulsed signals with a data rate of 450 Mbit/s at 5.6 GHz and verify that phase regeneration from pulses generated by free running oscillators has no notable SNR drawback compared to classic systems.
10:10 - 11:50
TU2E:
Nonlinear Device, Circuit, and System Modeling & Analysis
Chair:
Christopher Silva
Chair organization:
The Aerospace Corporation
Co-chair:
Anding Zhu
Co-chair organization:
Univ. College Dublin
Location:
314
Abstract:
The session presents advances in the modeling of MIMO transmitters, and the simulation and design of oscillator circuits. In addition, distortion effects in silicon substrates and carbon-nanotube transistors are also addressed.
Presentations in this
session
TU2E-1 :
Analysis of Thermal Coupling Effects in Integrated MIMO Transmitters
Authors:
Emanuel Baptista, Koen Buisman, João Caldinhas Vaz, Christian Fager
Presenter:
Christian Fager, Chalmers Univ. of Technology, Sweden
(10:10 - 10:30 )
Abstract
This paper presents a detailed analysis of thermal coupling and self-heating effects in highly integrated wireless transmitters. A MIMO transmitter prototype consisting of two closely integrated power amplifiers was built and modelled through microwave and thermal characterizations. The thermal behavior was extracted using FEM software and modelled with an equivalent RC net-work. The PA model was obtained experimentally using a pulsed setup. An RF-thermal simulator was developed and used with the models to predict joint thermal and electrical behavior. Measurements with modulated communication signals were done and compared with the simulator to demonstrate its feasibility for analysis of thermal effects in highly integrated transmitter applications.
TU2E-2 :
Nonlinear Technique for the Analysis of the Free-Running Oscillator Phase Noise in the Presence of an Interference Signal
Authors:
Sergio Sancho, Almudena Suarez, Mabel Ponton
Presenter:
Sergio Sancho, Univ. of Cantabria, Spain
(10:30 - 10:50 )
Abstract
A new methodology for the prediction of the oscillator phase noise under the effect of an interference signal is presented. It is based on a semi-analytical formulation in the presence of the noisy interferer, using a realistic oscillator model, extracted from harmonic-balance simulations. The theoretical analysis of the phase process enables the derivation of key mathematical properties, used for an efficient calculation of the interfered-oscillator phase noise spectrum. The resulting quasi-periodic spectrum is predicted, as well as the impact of the interferer phase noise over each spectral component, in particular over the pulled oscillation frequency. It is demonstrated that, under some conditions, the phase noise at this component is pulled to that of the interference signal. Resonance effects at multiples of the beat frequency are also predicted. The analyses have been validated with experimental measurements, obtaining an excellent agreement.
TU2E-3 :
Stability Analysis of Wireless Coupled-Oscillator Circuits
Authors:
Mabel Ponton, Almudena Suarez
Presenter:
Mabel Ponton, Univ. of Cantabria, Spain
(10:50 - 11:10 )
Abstract
Abstract— Distributed synchronization of sensor networks can be achieved by coupling the oscillator signals of the sensor nodes. Previous works describe the coupling effects in an idealized man-ner, with constant scalar coefficients. Here a realistic analysis of the coupled-system dynamics is presented for the first time to our knowledge, taking into account the antenna gains and propaga-tion effects on the amplitude and phase values of the equivalent current sources, injecting the oscillator elements. The new formu-lation provides the synchronized oscillation frequency and ampli-tude and phase distributions of the coupled system. Distinct oscillation modes, with different phase shifts between the oscilla-tor elements, are identified, associated with the system symmetry. The stability properties of these modes change with the distance between the oscillator elements. The possibility to impose in-phase operation by tuning of the oscillator elements is demon-strated. Good agreement is obtained between simulation and measurements.
TU2E-4 :
Linearity and Dynamic Range of Carbon-Nanotube Field-Effect Transistors
Authors:
Stephen Maas
Presenter:
Stephen Maas, Nonlinear Technologies, Inc., United States
(11:10 - 11:30 )
Abstract
We examine the problem of evaluating and optimizing
the linearity of a FET device, with application to carbon-
nanotube (CNT) FETs. We begin by noting that
conventional linearity criteria, such as input and output intermodulation
intercept points, are poor figures of merit for such
devices. Instead, we propose dynamic range as the figure of
merit and use a simple, unilateral FET equivalent circuit to
develop insight into its optimization. To do this, we derive
expressions for the dynamic range of a FET described by that
equivalent circuit. This exercise identifies criteria for optimizing
linearity and comparing the linearity of dissimilar devices.
Measurements of inherent linearity are presented, and we show
that CNT devices are significantly more linear than modern
microwave FETs.
TU2E-5 :
RF Harmonic Distortion Modeling in Silicon-Based Substrates Including Non-Equilibrium Carrier Dynamics
Authors:
Martin Rack, Jean-Pierre Raskin
Presenter:
Martin Rack, Université catholique de Louvain, Belgium
(11:30 - 11:50 )
Abstract
In this paper, a simulation methodology is presented that takes carrier dynamics into account, disallowing instantaneous changes in substrate carrier concentrations, and providing more accurate estimations of HD components. Using this method, harmonic distortion (HD) components introduced in CPW lines on Si-based substrates are simulated. The results are compared to measured HD components over a wide range of bias points and at three fundamental frequencies from 900 MHz to 4 GHz. It is shown that carrier relaxation times are of first importance for understanding the HD introduced by Si-substrates at RF frequencies and above. Furthermore, characteristic dips in the HD components, are evaluated and shown to be tightly linked to the position of the device’s DC bias voltage relative to the substrate’s flatband voltage. The new simulation tool is also capable of capturing these typical dips in the HD curves, and provides physical insight into the reasons behind their existence.
TU2F:
Recent Advances in CMOS Integrated Circuits from Baseband to THz
Chair:
Cynthia Hang
Chair organization:
Raytheon Company
Co-chair:
Terry Cisco
Co-chair organization:
CAED
Location:
315
Abstract:
A wide range of designs exploiting CMOS technology to enable THz imaging, correlated W-Band LO's, Gbit data transfer, and substrate isolation.
Presentations in this
session
TU2F-1 :
A 475–511 GHz Radiating Source With SIW-Based Harmonic Power Extractor in 40 nm CMOS
Authors:
Kaizhe Guo, Patrick Reynaert
Presenter:
Kaizhe Guo, Katholieke Univ. Leuven, Belgium
(10:10 - 10:30 )
Abstract
This paper presents a 0.49 terahertz (THz) radiating source in 40 nm CMOS. The radiating source is composed of a cross-coupled oscillator, a differential tripler, a substrate integrated waveguide (SIW) based harmonic power extractor (HPE) and a folded dipole antenna. The HPE can optimize third harmonic power extraction and provide suppression of unwanted lower order harmonic leakage. The measured equivalent isotropically radiated power (EIRP) of the radiating source is -4.1 dBm. According to simulated antenna gain of 11.2 dB, the output power and DC-to-THz efficiency of the signal source can be calculated as -15.3 dBm and 0.173%, respectively. The output frequency can be tuned from 475 to 511 GHz within 10 dB EIRP variation.
TU2F-2 :
0.4-THz Wideband Imaging Transmitter in 65-nm CMOS
Authors:
Zeshan Ahmad, Kenneth O
Presenter:
Zeshan Ahmad, Texas Instruments, Inc., United States
(10:30 - 10:50 )
Abstract
A wideband THz imaging transmitter in a 65-nm bulk CMOS process is demonstrated. The TX generates 0.73 mW of peak output power at 448 GHz and operates over a setup-limited bandwidth of 15% by using an energy efficient frequency quadrupler implemented with a cascade of two frequency doublers, and by co-optimizing the power driver and accumulation-mode symmetric MOS varactor frequency tripler. The TX has the highest reported single-element power density and 0.8% (1.66% w/o PLL) DC to RF conversion efficiency after including simulated PLL power consumption is the highest reported among CMOS and SiGe HBT sources operating above 0.3 THz.
TU2F-3 :
A Fully-Integrated Cartesian Feedback Loop Transmitter in 65 nm CMOS
Authors:
Jinbo Li, Ran Shu, Shilei Hao, Bo Yu, Tongning Hu, Yu Ye, Jane Gu
Presenter:
Jinbo Li, Univ. of California, Davis, United States
(10:50 - 11:10 )
Abstract
This paper demonstrates a fully-integrated Cartesian feedback loop transmitter (TX) in CMOS 65nm. LO path phase shifters, aiming at compensating the phase misalignments between up- and down-conversion mixers or RF path phase delays, are improved by an interpolation scheme to ensure consecutive 360° tuning range. Power supplies of different circuit blocks are separated to cut off the nested feedback loops formed between the power buses and the circuit blocks for the stability consideration. The transmitter delivers 18.5dBm output P1dB at 9GHz. Over 10dB suppression ratio of intermodulation products in the two-tone test is achieved, and ACPR is improved by 9dB using a 2Mbps 16QAM testing signal. The maximum IM3 suppression is over 15 dB at medium output power levels.
TU2F-4 :
A 0.029 mm^2 8 Gbit/s Current-Mode AGC Amplifier With Reconfigurable Closed-Loop Control in 65 nm CMOS
Authors:
Bharatha Kumar Thangarasu, Kaixue Ma, Kiat Seng Yeo
Presenter:
Bharatha Kumar Thangarasu, Singapore University of Technology and Design, Singapore
(11:10 - 11:30 )
Abstract
A 8 Gbit/s current-mode automatic gain control (CMAGC) am-plifier with a reconfigurability between an internal closed loop control (analog AGC) and external baseband feedback control (digital AGC) is introduced in this paper. By using the p-n diode in CMOS technology, this CMAGC achieves an exponential vari-able gain control and a logarithmic power detection with more than 24 dB dynamic range. The proposed CMAGC consumes a maximum 48 mW dc power from a 1.2 V supply voltage and the core design occupies only 0.029 mm2 die area.
TU2F-5 :
Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz
Authors:
Vadim Issakov, Johannes Rimmelspacher, Andreas Werthof, Amelie Hagelauer, Robert Weigel
Presenter:
Johannes Rimmelspacher, Infineon Technologies AG, Germany
(11:30 - 11:40 )
Abstract
Interferences injected to an RF circuit may strongly
deteriorate the electrical performance. Parasitic coupling via
substrate is one of the dominant interference transmission
mechanisms in highly integrated systems. The effect of substrate
coupling becomes more critical at higher circuit frequencies. This
poses a particular challenge for millimeter-wave systems, since isolation become less efficient
with an increasing frequency. This paper presents
an experimental study on coupling via bulk silicon and RFSOI
substrates. We investigate in measurement up to 110 GHz
efficiency of several isolation techniques, such as triple-well, p+
and n+ guard-rings and use of undoped highly resistive region.
Additionally, RF-SOI substrates are known to be beneficial for
higher crosstalk isolation. However, also this isolation degrades
at higher frequencies. Hence, we investigate in measurement up
to 110 GHz the isolation via low-resistivity and high-resistivity
trap-rich SOI substrate variants. Test structures were realized in
40 nm bulk CMOS and 45 nm RF-SOI.
TU2G:
Developments in High Power MMIC Amplifiers
Chair:
Gayle Collins
Chair organization:
Nuvotronics
Co-chair:
James Komiak
Co-chair organization:
BAE Systems, Inc.
Location:
316A
Abstract:
New advances in high performance integrated power amplifiers will be presented in this session. A number of new and novel approaches to improve bandwidth, linearity and efficiency of the MMIC PA are included in this session. Broadband techniques at high power and efficiency are demonstrated using a 0.2um GaN HEMT technology. A novel load modulation approach for the extension of Doherty performance using GaN HEMTS will be shown and a linearity enhancement method using bias circuitry will be discussed. A new high efficiency, low cost approach to Doherty design with an optimized footprint will be shown for the first time.
Presentations in this
session
TU2G-1 :
Single and Dual Input Packaged 5.5–6.5 GHz, 20 W, Quasi-MMIC GaN-HEMT Doherty Power Amplifier
Authors:
Mohammed Ayad, Marc Camiade, Estelle Byk, Denis Barataud, Guillaume Neveux
Presenter:
Mohammed Ayad, United Monolithic Semiconductors, France
(10:10 - 10:30 )
Abstract
This paper presents the design, the realization and the power characteristics of plastic low cost packaged symmetric Doherty Power Amplifiers (DPA) operating in the 5.5-6.5GHz bandwidth. A single input (SI-DPA) and a dual input (DI-DPA) DPA are proposed based on two power bars composed of two GaN HEMT cells. Input and output matching networks are designed on passive GaAs MMIC technology.
The measured power results under continuous wave signal at the same input level of a conventional Deep class AB PA in the one hand, the SI-DPA and the DI-DPA in the other hand are presented.
To our knowledge, it is the first published SI and DI-DPAs working at C band, designed using Quasi-MMIC technology and assembled in plastic package.
TU2G-2 :
A Compact 60 W MMIC Amplifier Based on a Novel 3-Way 1:2:1 Doherty Architecture With Best-in-Class Efficiency for Small Cells
Authors:
Xavier Moronval, John Gajadharsing, Jean-Jacques Bouny
Presenter:
Xavier Moronval, Ampleon, France
(10:30 - 10:50 )
Abstract
A novel semi-integrated three-way 1:2:1 Doherty amplifier architecture is proposed to address the high efficiency / low cost / small footprint challenges of small cells. Using this approach, a 35 x 35 mm2 amplifier based on a 60 W MMIC is designed for the 2.11 to 2.17 GHz frequency band. It achieves a maximum gain of 27.4 dB, an average efficiency of 48.5 % at 8 dB back-off, and can be linearized to lower than -58 dBc ACPR level with a 20 MHz wide LTE signal.
TU2G-3 :
Two-Stage Integrated Doherty Power Amplifier With Extended Instantaneous Bandwidth for 4/5G Wireless Systems
Authors:
Seungkee Min, Henry Christange, Margaret Szymanowski
Presenter:
Seungkee Min, NXP Semiconductors, United States
(10:50 - 11:10 )
Abstract
A highly linear fully integrated 40 W 2-stage Doherty power amplifier (DPA) for 4/5G communication systems is introduced. By using the digital pre-distortion (DPD) technique, the proposed DPA achieved -58 dBc ACLR with 42% total line-up efficiency at 39 dBm average output power with a 365 MHz IBW at a center frequency of 2 GHz. To extend instantaneous bandwidth (IBW), the proposed power amplifier (PA) is employed with linearity enhancement circuitry to minimize low frequency second-order term. To the best of the authors’ knowledge, this is the first 2-stage RFIC DPA which can be linearized to this level with 365 MHz signal bandwidth and achieve this level of efficiency.
TU2G-4 :
2 to 18 GHz High-Power and High-Efficiency Amplifiers
Authors:
Phu Tran, Michael Smith, Mike Wojtowicz, Mansoor Siddiqui, Leo Callejo
Presenter:
Phu Tran, Northrop Grumman Aerospace Systems, United States
(11:10 - 11:30 )
Abstract
The design and performance of a MMIC power amplifier chip set covering the 2 to 18 GHz band using 0.2μm GaN HEMT technology is presented. Measured results of the Output MMIC show an average output power of 20.7 W and an average PAE greater than 27% across the 2 to 18 GHz band, while the Driver MMIC demonstrates an 8 to 10 W capability with an average PAE of 28% across the 2 to 18 GHz band. These results are among the highest power and PAE reported from MMICs covering this bandwidth.
TU2H:
Multi-GHz Frontend Mixed-Signal Circuits and All-Digital Transmitters
Chair:
Hyoung Soo Kim
Chair organization:
California State Polytechnic University Pomona
Co-chair:
Hermann Boss
Co-chair organization:
Rohde & Schwarz GmbH & Co KG
Location:
316B
Abstract:
This session presents 7 papers that address enhancements of Multi-GHz fronted mixed-signal circuits and all-digital transmitter.
The presented mixed signal circuits use SiGe and InP Technologies and demonstrate throughput and performance enhancement compared to prior art.
The session is continued with papers that promotes new architectures for all-digital transmitters that reduces complexity while increasing the system bandwidth and operation frequency.
Presentations in this
session
TU2H-1 :
57.5 GHz Bandwidth 4.8 Vpp Swing Linear Modulator Driver for 64 GBaud m-PAM Systems
Authors:
Alireza Zandieh, Sorin Voinigescu, Peter Schvan
Presenter:
Alireza Zandieh, Univ. of Toronto, Canada
(10:10 - 10:30 )
Abstract
A novel series-stacked large swing push-pull MOSHBT driver was implemented in SiGe BiCMOS. The circuit achieves 4.8Vpp differential swing, 57.5GHz bandwidth and has an output compression point of 12 dBm per side. 4-PAM and 8-PAM eye diagrams were measured at 56 GBaud for a record data rate of 168 Gb/s. 4-PAM 64Gbaud eye diagrams were also demonstrated, The circuit consumes 820/600 mW with/without the predriver, for an energy efficiency of 4.88/3.57 pJ/b.
TU2H-2 :
A 128-GS/s 63-GHz-Bandwidth InP-HBT-Based Analog-MUX Module for Ultra-Broadband D/A Conversion Subsystem
Authors:
Munehiko Nagatani, Hitoshi Wakita, Hiroshi Yamazaki, Hideyuki Nosaka, Kenji Kurishima, Minoru Ida, Yutaka Miyamoto
Presenter:
Munehiko Nagatani, Nippon Telegraph and Telephone Corp., Japan
(10:30 - 10:40 )
Abstract
A 128-GS/s 63-GHz-bandwidth 2:1 analog-multiplexer (AMUX) module has been developed for ultra-broadband digital-to-analog (D/A) conversion subsystems. The AMUX IC was fabricated using 0.5-μm-emitter InP HBTs, which have a peak ft and fmax of 290 and 320 GHz, respectively. The IC has a through bandwidth of 67 GHz. We developed an ultra-low-loss metal package equipped with G3PO (SMPS) connectors. The AMUX module based on our new package has a through bandwidth of 63 GHz and operates at a sampling rate of up to 128 GS/s. We then constructed an over-50-GHz-bandwidth D/A conversion subsystem based on two 26-GHz-bandwidth sub-DACs and this AMUX module. In addition, we successfully demonstrated a 214-Gb/s discrete multi-tone (DMT) signal generation.
TU2H-3 :
A 27-GHz 45-dB SFDR Track-and-Hold Amplifier Using Modified Darlington Amplifier and Cascoded SEF in 0.18 µm SiGe Process
Authors:
Yu-An Lin, Ya-Che Yeh, Hong-Yeh Chang
Presenter:
Yu-An Lin, National Central Univ., Taiwan
(10:40 - 10:50 )
Abstract
A broadband high-speed high-linearity track-and-hold amplifier (THA) is presented in this paper using 0.18 μm SiGe process. A switched emitter follower track-and-hold (T/H) stage with cas-code stage is adopted to achieve high resolution for analog-to-digital conversion. A modified Darlington amplifier with peaking technique is used to enhance the input bandwidth. With a dc power consumption of 94.3 mW, the proposed THA demon-strates a 3-dB input bandwidth from DC to 27 GHz, a maximum spurious-free dynamic range of 45 dB, and a minimum total harmonic distortion of -40 dB. The proposed circuit has potential for high-speed high-dynamic-range applications due to its supe-rior performance.
TU2H-4 :
A 2x2 80 Gbps 2^{15}-1 PRBS Generator With Three Operational Modes and a Clock Divider
Authors:
Mohammad Mahdi Khafaji, Guido Belfiore, Ronny Henker, Frank Ellinger
Presenter:
Guido Belfiore, Technische Univ. Dresden, Germany
(10:50 - 11:00 )
Abstract
An 80 Gbps 2^{15}-1 pseudo-random bit sequence (PRBS) generator offering a unique feature of two programmable channels is presented. It is possible to select either a replica of the full rate stream, two parallel streams at half the rate, or a combination of external and internal pattern to the output. This flexibility makes the design suitable for generating proper test signal for both binary and 4-PAM (pulse-amplitude-modulation) communication systems. While the longer sequence in this design adds to the complexity, the energy per bit is comparable with the state-of-the-art designs. Notably for the clock drivers, as one of the bottlenecks of a PRBS generator, an open-collector structure with distributed loading is studied and optimized for very low power operation. The design features a clock divider and zero detection circuit as well. The circuit was fabricated in a 130 nm SiGe BiCMOS process (300/500 GHz f_T/f_{max}).
TU2H-5 :
All-Digital Transmitter Based on Cascaded Delta-Sigma Modulators for Relaxing the Analog Filtering Requirements
Authors:
Daniel Dinis, Arnaldo Oliveira, José Vieira
Presenter:
Daniel Dinis, Instituto De Telecomunicacoes, Portugal
(11:00 - 11:10 )
Abstract
In this paper it will be shown that cascading Delta-Sigma Modulators with different sampling rates can have a considerable impact in relaxing the high quality factor of the analog output filter used in All-Digital Transmitters. In particular, a significant reduction of the noise peak power can be achieved with just minor changes in the hardware. This novel concept has been successfully implemented and validated on an FPGA-based transmitter, and compared with the conventional architectures that perform a single-bit quantization into a single stage.
TU2H-6 :
An FPGA-Based All-Digital Transmitter With 9.6-GHz 2nd Order Time-Interleaved Delta-Sigma Modulation for 500-MHz Bandwidth
Authors:
Masaaki Tanio, Shinichi Hori, Noriaki Tawa, Kazuaki Kunihiro
Presenter:
Masaaki Tanio, NEC Corp., Japan
(11:10 - 11:30 )
Abstract
An FPGA-based all-digital transmitter with 9.6-GHz 2nd order Time-Interleaved ΔΣ-modulation (TI-DSM) is presented. To improve the operation frequency of TI-DSM, bit separation architecture is proposed. This proposed architecture realizes the 1-bit digital transmitter with 500-MHz bandwidth. This is the widest bandwidth modulation among state-of-the-art FPGA-based all-digital transmitters.
TU2H-7 :
All-Digital Transmitter Based Antenna Array With Reduced Hardware Complexity
Authors:
Daniel Dinis, Arnaldo Oliveira, José Vieira
Presenter:
Daniel Dinis, Instituto De Telecomunicacoes, Portugal
(11:30 - 11:50 )
Abstract
In this paper, we present a novel architecture for an All-Digital FPGA-based Antenna Array RF Transmitter.
The proposed method reduces the complexity inherent to the design of antenna arrays by removing external Digital-to-Analog Converters and external analog upconversion stages. With such a concept, the analog front-end complexity is highly reduced and, consequently, more radiating elements can be integrated. This novel concept has been successfully validated with an FPGA-based transmitter. Normalized radiation patterns as well
as Error Vector Magnitude measurements were obtained for different steering angles. A minimum steering resolution of 1º° was achieved with a low-complexity baseband phase shifting procedure.
In addition to that, an automated calibration procedure is also presented and evaluated.
10:30 - 12:00
TUIF1:
Interactive Forum - One
Chair:
Matthew Moorefield
Chair organization:
Univ. of Hawaii
Co-chair:
Kent Sarabia
Co-chair organization:
Univ. of Hawaii
Location:
Overlook Concourse
Presentations in this
session
TUIF1-1 :
Image Theory Based Miniaturization of Nonradiative Dielectric Coupler for Millimeter Wave Integrated Circuits
Authors:
Ahmed Sakr, Walid Dyab, Ke Wu
Presenter:
Ahmed Sakr, École Polytechnique de Montréal, Canada
Abstract
A simple analytical representation supported with equivalent circuit modeling is presented for a nonradiative dielectric coupler. A matrix form for the dispersion relation and the field coefficients is introduced for simplicity. The design methodology and miniaturization of such couplers using two vertical mirror conducting planes is studied. The new image-nonradiative dielectric coupler is 50% smaller in the cross sectional size and has a relatively good reduction in the required coupling length, as compared to conventional coupler without the conducting walls. Those image conducting planes suppressed the unwanted modes and guaranteed a single mode operation when exciting the structure with a horizontally polarized field.
TUIF1-2 :
Plane-Wave Scattering of a Periodic Corrugated Cylinder
Authors:
Samuel Garcia, Jonathan Bagby, Ivette Morazzani
Presenter:
Samuel Garcia, Florida Atlantic University, United States
Abstract
A novel approach to modeling the scattered field of a periodic corrugated cylinder, from an oblique incident plane wave, is pre-sented. The approach utilizes radial waveguide approximations for fields within the corrugations, which are point matched to approximated scattered fields outside of the corrugation to solve for the expansion coefficients. The point matching is done with TMz and TEz modes simultaneously, allowing for hybrid modes to exist.
The methodology and analysis applied in this paper provide a solution for computational electromagnetics, RF communications, radar systems and the like, for the design, development, and analysis of such systems. The modeling techniques offered pro-vide a full description and prediction of the scattered field of a periodic corrugated cylinder. The model is configured to validate the results by comparing them to alternate methods for the same geometry.
TUIF1-3 :
Electromagnetic Fields and Modes in 2-Layer Spherical Cavities
Authors:
Ingo Wolff
Presenter:
Ingo Wolff, IMST GmbH, Germany
Abstract
Electromagnetic fields and modes in a spherical cavity with a dielectric sphere as an inset are discussed. The influence of dielectric losses and conductor losses as well as of the geometric parameters on the eigenvalues, Q-factors, electromagnetic fields and modes in the cavity is analyzed . Two existing modes of the electromagnetic fields, the cavity modes and the open dielectric sphere modes, are identified inside the cavity and their physical backgrund is discussed in detail.
TUIF1-4 :
A Negative Group Delay Tuner With Stable Insertion Loss
Authors:
Lin-Sheng Wu, Liang-Feng Qiu, Jun-Fa Mao
Presenter:
Lin-Sheng Wu, Shanghai Jiao Tong Univ., China
Abstract
A new method is proposed for tunable negative group delay (NGD) circuit in this paper. The tuner is based on a transmission line resonator loaded on a λ/4 stub, and a lumped resistor and two varactors are mounted on it. By properly biasing the two varactors, the susceptance slope parameter and unloaded Q-factor are significantly tuned while the resonant frequency and input admittance are almost unchanged. In the measured results of the tuner prototype designed at 1.0 GHz, when NGD is tuned from 0.2 to 1.9 ns, the stable insertion loss is only changed from 3.4 to 2.5 dB.
TUIF1-5 :
Estimation of Conductive Losses in Complementary Split Ring Resonator (CSRR) Loading an Embedded Microstrip Line and Applications
Authors:
Lijuan Su, Javier Mata-Contreras, Paris Vélez, Ferran Martín
Presenter:
Lijuan Su, Univ. Autònoma de Barcelona, Spain
Abstract
In this paper, a simple method to estimate the conductive losses in complementary split ring resonators (CSRRs) is proposed. It is based on the measurement of the transmission coefficient in an embedded microstrip line with the CSRR etched in the ground plane, beneath the conductor strip. It is assumed that losses are due to the substrate (dielectric losses) and CSRR (ohmic and dielectric losses) since conductive losses in the strip of the line are negligible. By considering the circuit model of the CSRR-loaded line, including the substrate conductance plus the conductive (ohmic resistance) and dielectric losses of the CSRR, it is possible to infer from the insertion loss the real part of the shunt impedance at resonance, then the ohmic resistance of the CSRR can be estimated. Once this resistance is known, it is possible to use these CSRR-loaded structures to estimate the complex permittivity of dielectric samples and liquids.
TUIF1-6 :
A Novel High Q Inductor Based on Double-sided Substrate Integrated Suspended Line Technology With Patterned Substrate
Authors:
Lianyue Li, Kaixue Ma, Shouxian Mou
Presenter:
Lianyue Li, Univ. of Electronic Science and Technology of China, China
Abstract
This paper presents a novel high quality factor spiral inductor based on substrate integrated suspended line technology. Sus-pended substrate are hollowed in specific shape for reducing the dielectric substrate loss. And double-sided interconnected stripline are used for diminishing the metal ohmic loss. Simula-tion and measurement results demonstrate that the double-sided interconnected spiral inductor with patterned suspended sub-strate can improve inductor quality factor up to about 40%.
TUIF1-7 :
A Systematic Coupling Balance Scheme to Enhance Amplitude and Phase Matches for Long Traveling Multi-Phase Signals
Authors:
Jinbo Li, Jane Gu
Presenter:
Jinbo Li, Univ. of California, Davis, United States
Abstract
This paper presents a systematic coupling balance technique to enhance signal matches for long traveling N-pair differential signals. The analysis is conducted on 2N lines with closed-form expressions to indicate the three causes of mismatches. Then, a systematic method is presented to address the three factors to realize balanced coupling for signal matches by using twisting schemes. The effectiveness of this technique is demonstrated on FR4 print-ed-circuit board (PCB) for I Q traces, which shows great suppression of I Q imbalances with well-matched simulation and measurement results. The bandwidth with 1° degree mismatch is boosted from 75MHz to 360MHz, or from 135MHz to 680MHz considering the overall effects of the four signals. This technique requires no power consumption or complex circuits or algorithms, and can be extended to high frequencies with the scaling of the structure size.
TUIF1-8 :
Half-Mode Hexagonal Substrate Integrated Waveguide (SIW) Structure and its Application
Authors:
Taehee Jang, Komlan Payne, L. Jay Guo, Jun (Brandon) Choi
Presenter:
Taehee Jang, Univ. of Michigan, United States
Abstract
A half-mode hexagonal substrate integrated waveguides (SIWs) which the internal angle is 90 deg are used, and a low-profile and tripolarization antenna with three independent ports and three orthogonal polarizations is designed. Both CRLH SIW and ZOR SIW antenna for dual-band operation are designed based on HMHSIW, so that efficiently integrated each other to reduce side and provide more design freedom.
TUIF1-9 :
Physical Evidence of Mode Conversion Along Mode-Selective Transmission Line
Authors:
Desong Wang, Faezeh Fesharaki, Ke Wu
Presenter:
Desong Wang, École Polytechnique de Montréal, Canada
Abstract
This work investigates and demonstrates the evidence of mode conversion along the mode-selective transmission line (MSTL). In this work, mode conversion of the fundamental mode is observed through examining the field distributions of a longitudinally uni-form MSTL. Characteristic mode conversion frequency is defined based on the distribution properties of the longitudinal magnetic field component and the intrinsic physical implications. The accu-racy and effectiveness of this definition are verified numerically and experimentally. The result indicates that a quasi-TEM fun-damental mode and a quasi-TE10 fundamental mode dominate in the MSTL below and above this frequency, respectively. This mode conversion could have specific applications in the design of microwave, millimeter-wave, and THz components and systems.
TUIF1-10 :
Development of a Novel 10 GHz-Band Hose-Type Soft Resin Waveguide
Authors:
Shotaro Ishino, Koji Yano, Satoshi Matsumoto, Takuo Kashiwa, Naoki Shinohara
Presenter:
Shotaro Ishino, Furuno Electric Co., Ltd., Japan
Abstract
We develop a resin waveguide for microwave power transfer and wireless communication in an automobile harness. Resin waveguides are more lightweight, low-cost, and flexible than conventional waveguides. Our prototype resin waveguide is fabricated from an elastomeric material with a very low dielectric loss by a copper-foil forming process. The low emission and loss of the transmission line are confirmed by the transmission characteristic (−0.3 dB/m in the 10 GHz band).
TUIF1-11 :
3D Heterogeneous Integration Technology Using Hot via MMIC and Silicon Interposer With Millimeter Wave Application
Authors:
Jun Zhou, Jiapeng Yang, Ya Shen
Presenter:
Jun Zhou, Nanjing Electronic Device Research Institute, China
Abstract
The block diagram of 3D heterogeneous integration using hot-via LNA, silicon interposer, PCB is presented in this paper. Several broadband vertical transitions between up and down are simulated and optimized by EM simulator. The vertical transition works well from DC to 40GHz, the return loss is better than 15 dB; the insertion loss of each single transition is less than 1 dB. The LNA operating at Ka band using hot via technology is also presented and assembled onto the silicon substrate and multilayer PCB. This stacked LNA module shows the good performance and reasonable agreement with on wafer measurement of normal LNA.
TUIF1-12 :
Development of a 1.85 mm Coaxial Blind Mating Interconnect for ATE Applications
Authors:
Bill Rosas, Jose Moreira, Daniel Lam
Presenter:
Bill Rosas, Signal Microwave, United States
Abstract
The continuous increase on the I/O data rate and frequency on large volume integrated circuits creates significant challenges on the interconnect to the device under test (DUT) printed circuit board test fixture for automated test equipment (ATE). In this paper we will present a blind mating interface for ATE systems based on a 1.85 mm coaxial geometry to achieve a 65 GHz bandwidth guaranteed interconnect. We present measured S-parameters and also data eye diagrams for a 100 Gbps NRZ application.
TUIF1-13 :
A Micromachined Packaging With Incorporated RF-Choke for Integration of Active Chips at SubMillimeter-Wave Frequencies
Authors:
Armin Jam, Jack East, Kamal Sarabandi
Presenter:
Armin Jam, Univ. of Michigan, United States
Abstract
This paper presents the design, fabrication and evaluation of a packaging method for integration of active MMIC at sub-MMW frequencies. The concept is based on a peg and socket structure composed of RF transitions and biasing circuitry where the RF/DC pads on the MMIC chip mate with the on-wafer RF transitions and biasing pads, respectively, for a seamless packaging method. To prevent instability of the packaged device, an ultra-wideband RF-choke is devised to provide better than 15 dB of isolation between the chip and the biasing circuitry from 30-330 GHz. A prototype of the RF-choke along with the rest of the packaging block is fabricated using silicon micromachining technology at Y-band and the performance is measured where close agreement of the measured and simulated results is shown. Additionally, the proposed integration method is used for packaging of an amplifier at 210 GHz where excellent RF and biasing results are reported.
TUIF1-14 :
A Non-Galvanic D-Band MMIC-to-Waveguide Transition Using eWLB Packaging Technology
Authors:
Ahmed Hassona, Zhongxia Simon He, Chiara Mariotti, Franz Dielacher, Vessen Vassilev, Yinggang Li, Joachim Oberhammer, Herbert Zirath
Presenter:
Ahmed Hassona, Chalmers Univ. of Technology, Sweden
Abstract
This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110-138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors’ knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.
TUIF1-15 :
Capacitive Microwave Resonator Printed on a Paper Substrate for CNT Based Gas Sensor
Authors:
Aymen Abdelghani, Dominique Baillargeat, Stephane Bila
Presenter:
Aymen Abdelghani, Xlim - CNRS- Unversite De Liroges, France
Abstract
Inkjet-printed RF electronics fabricated on paper and other flexible substrates are introduced as a low-cost solution for the sensor applications. Inkjet printing is an additive process that has enabled various disruptive technologies combining new materials with novel multidisciplinary operation concepts. This paper presents a fully inkjet printed capacitive structure used to provide a differential detection, by comparing the frequency responses of quasi-twin structures, one with and one without sensitive material. The sensitive surface is printed with a poly-mer solution containing multi-wall carbon nanotubes (CNTs), and the resonator is dimensioned for operating in the RF band.
TUIF1-16 :
RF Characterization of Coplanar Waveguide (CPW) Transmission Lines on Single-Crystalline Diamond Platform for Integrated High Power RF Electronic Systems
Authors:
Yuxiao He, Michael Becker, Tim Grotjohn, Aaron Hardy, Matthias Muehle, Thomas Schuelke, John Papapolymerou
Presenter:
Yuxiao He, Michigan State Univ., United States
Abstract
This paper presents the fabrication process of single-crystalline diamond platform used for high power RF components. We report –for the first time- results of a Coplanar Waveguide (CPW) transmission line printed on the single-crystalline diamond substrate using the Aerosol Jet Printing technique. The transmission line is 2.4404 mm long and is printed on the 3.5 mm $\times$ 3.5 mm diamond substrate utilizing a silver ink as the conducting material. The characteristic impedance of the CPW line is designed to be 50 Ohms. The measured average loss per millimeter of the line is 0.36 dB$/$mm and 0.52 dB$/$mm at 20 GHz and 40 GHz respectively. This results show the single-crystalline diamond substrate is a good candidate for the development of highly integrated RF circuits.
TUIF1-17 :
All-Printed Conformal Electronically Scanned Phased Array
Authors:
Mahdi Haghzadeh, Craig Armiento, Alkim Akyurtlu
Presenter:
Mahdi Haghzadeh, Univ. of Massachusetts, Lowell, United States
Abstract
We present a novel fully printed, conformal phased array antenna with beam forming capability. Analog phase shifters with a left handed transmission line (LHTL) design are used at the feed lines of four patch subarrays. The microstrip LHTL phase shifter is made of series tunable capacitors and shunt inductive stubs. The voltage-variable capacitor (varactor) is an interdigitated capacitor (IDC) filled with a novel ferroelectric nanocomposite. The sinterless nanocomposite dielectric is made by suspending especially-engineered nanoparticles of ferroelectric Barium Strontium Titanate (BST) in a thermoplastic polymer. Direct-ink writing techniques are used to digitally print the conductive and ferroelectric features on flexible substrates. RF measurements on varactors showed up to 10% capacitance tunability at 2GHz. Preliminary gain measurements on the phased array prototype confirmed electronic beam steering. The proposed phased array design has the potential for roll-to-roll fabrication of ultra-low-cost beamforming systems for communication and radar applications.
TUIF1-18 :
A Lego-Like Reconfigurable Cavity Using 3-D Polyjet Technology
Authors:
Yuxiao He, Premjeet Chahal, John Papapolymerou
Presenter:
Yuxiao He, Michigan State Univ., United States
Abstract
Combination of lego-like tuning post cavity structure
and 3-D Polyjet printing is utilized to demonstrate a high
Q X-band resonator for the first time. The dominant mode is
TE101 mode with the resonant frequency of 8.32 GHz. The
Polyjet printing techniques allows for high resolution, fast and low cost prototyping. Here the cavity is
assembled by two 3-D Polyjet printed pieces through a lego-like
process. While the 6 tuning posts are used to perturb the
field inside the cavity, making such cavity to be reconfigurable
by tuning the resonant frequency. Simulation
and measured results match very closely. About 0.1% frequency
shift and a unloaded quality factor of 391 were measured for
the resonator with perturbation. And average of 0.54 %
of frequency shift as well as the average quality factor of 182
at all the tuned resonant frequencies. This paper demonstrates
the advantage of Polyjet fabrication process for RF structure.
TUIF1-19 :
Towards Low-Cost Sensors for Real-Time Monitoring of Contaminant Ions in Water Sources
Authors:
Amin Gorji, Amy Kaleita, Nicola Bowler
Presenter:
Amin Gorji, Iowa State Univ., United States
Abstract
In this work, a systematic study of the dielectric properties of environmentally-relevant electrolyte liquids is presented. Excessive amount of unwanted chemicals and ions in water sources can often cause environmental and health concerns. The lack of affordable and real-time sensors for these contaminants limits effective conservation and management strategies. To tackle these problems, we propose a method to exploit indicators extracted from dielectric spectra up to 20 GHz and thereby establish a basis for developing a low-cost sensing system. Results for nitrate, sulfate, and chloride ions show that the method can be judiciously used to uniquely estimate the concentration and type of ions.
TUIF1-20 :
Biological Cell Discrimination Based on Their High Frequency Dielectropheretic Signatures at UHF Frequencies
Authors:
Fatima Hjeij, Claire Dalmay, Cristiano Palego, Mehmet Kaynak, Arnaud Pothier
Presenter:
Arnaud Pothier, Xlim - CNRS- Unversite De Liroges, France
Abstract
This paper deals with the experimentation of dielectrophoresis techniques translated to radiofrequencies in order to characterize individually biological cells with the aim to discriminate them from their own intracellular dielectric specificities. Dielectrophoresis is a well-established technique frequently experimented in the kHz frequency to manipulate and sort electrically polarized particles thanks to motion forces induced on such particles once they cross a non-uniform AC electric field. Its efficiency for bio-logical cell characterization has been largely proved taking ad-vantage of interfacial polarization effects induced on both side of plasma membrane. The novelty of this work consists in exploring the capability of UHF signals to generate such motion effects on flowing biological cells in a microfluidic micro-device. With applied signal above 50MHz, we will see that distinct cross over frequencies can be identified as function of the cell type related this time to intracellular dielectric feature difference between cells and their extracellular media.
TUIF1-21 :
Frequency-Division-Multiplexed Signal and Power Transfer for Wearable Devices Networked Via Conductive Embroideries on a Cloth
Authors:
Akihito Noda, Hiroyuki Shinoda
Presenter:
Akihito Noda, Univ. of Tokyo, Japan
Abstract
We propose a powering scheme for tiny wearable devices attached on a cloth without individual one-to-one wires.
Devices with a special connector consisting of a tack and a clutch are stuck through a special cloth embroidered with conductive threads.
Physical mounting of the devices and electrical connection are integrated into a single action, i.e., just sticking the connector.
Combination of microwave/high-frequency circuit technology and recent highly conductive soft fabric materials opens up a new implementation scheme for wearable sensing/display/communication systems.
TUIF1-22 :
Wireless System for Continuous Monitoring of Core Body Temperature
Authors:
William Haines, Parisa Momenroodaki, Eric Berry, Michael Fromandi, Zoya Popovic
Presenter:
William Haines, Univ. of Colorado, United States
Abstract
Presented is a wireless wearable device aimed at
continuously monitoring internal temperature a few centimeters
deep in the body. A radiometer operating in the 1.4-1.427 GHz
quiet band is used with a circular patch probe to measure the
thermal radiation emitted by the body, which is proportional
to temperature. The output is digitized and transmitted over
Bluetooth by a TI CC2541, using a printed inverted-F antenna.
The wearable device is powered by a 3.7V Li-Ion battery,
through three buck-conversion circuits. The sensor design trades
performance (continuous calibration) for simplicity to reduce size
and power consumption, however validated measurement data of
water temperature inside the cheek demonstrates the feasibility
of radiometric internal temperature measurement in a wearable
platform.
TUIF1-23 :
3D Printed Wearable Flexible SIW and Microfluidics Sensors for Internet of Things and Smart Health Applications
Authors:
Wenjing Su, Zihan Wu, Yunnan Fang, Ryan Bahr, Pulugurtha Markondeya Raj, Rao Tummala, Manos Tentzeris
Presenter:
Wenjing Su, Georgia Institute of Technology, United States
Abstract
In this paper, a flexible SIW wearable sensing platform is proposed with a novel 3D printing process enabling fast-prototyping customized wearable devices.
SLA 3D printing that enables the fast prototyping and customization of wearable sensing platform.
Two different flexible metallization approaches are explored and realized in this paper, which is supplemental to each other and provide an excellent 3D metallization solution together.
Two 3D SIW transmission lines are shown with a great flexibility and a great potential of applicability in wearable devices.
A proof-of-concept microfluidics sensor based on an SIW slot waveguide antenna, is also presented in the paper with sensitivity of 1.7 MHz/Er, which can be used in the wearable sensing platforms of real-time monitoring of body fluids for Internet-of-Things and distributed healthcare.
The proposed SIW-based flexible wearable devices along with the microfluidics sensors can be used in various internet-of-things applications including smart health.
13:30 - 15:00
TUIF2:
Interactive Forum - Two
Chair:
George Zhang
Chair organization:
Univ. of Hawaii
Co-chair:
Ruthsenne Perron
Co-chair organization:
Univ. of Hawaii
Location:
Overlook Concourse
Presentations in this
session
TUIF2-1 :
Implicit Space Mapping With Variable-Fidelity EM Simulations and Substrate Partitioning for Reliable Microwave Design Optimization
Authors:
Slawomir Koziel, Adrian Bekasiewicz, John Bandler
Presenter:
Slawomir Koziel, Reykjavik University, Iceland
Abstract
Surrogate-assisted techniques enable considerable reduction of the computational cost of EM-driven design optimization processes. Space mapping (SM) is still the most popular method of this kind. Implicit SM (ISM) is particularly attractive because it does not alter the domain of the underlying coarse model and is easy to implement. Yet, ISM is difficult to apply if an equivalent circuit coarse model is unavailable or of poor quality. In this paper, we demonstrate feasible ISM implementation involving variable-fidelity EM simulation models. Preassigned parameters of ISM are introduced as dielectric permittivity values of the substrate sections in the coarse-mesh EM model (utilized as a coarse model for SM). By changing the number of sections, the number of preassigned parameters (and, consequently, the surrogate model flexibility) can be readily controlled. Our approach is demonstrated using a miniaturized rat-race coupler and compared to conventional SM approaches utilizing an equivalent circuit model.
TUIF2-2 :
Automatic Parametric Model Development Technique for RFIC Inductors With Large Modeling Space
Authors:
Humayun Kabir, Lei Zhang, Kevin Kim
Presenter:
Humayun Kabir, NXP Semiconductors, United States
Abstract
We present an automatic method to extract parametric model for RFIC inductors in large modeling space covering a wide range of geometrical variables. We use a modified double-pi network as the equivalent circuit topology of the inductor. Lumped element values are computed using empirical functions which are formulated in terms of inductor geometries and numerical coefficients. The automated method extracts coefficients through optimization of circuit model and electromagnetic (EM) data. An intelligent mapping scheme is formulated to map geometries of inductors to equivalent circuit components using neural networks making the model suitable for handling wide range of geometrical variations. Model developed in this way shows good accuracy compared to EM data with a significant reduction of developmental cost.
TUIF2-3 :
Efficient Extreme Learning Machine With Transfer Functions for Filter Design
Authors:
Li-Ye Xiao, Wei Shao, Tu-Lu Liang, Bing-Zhong Wang
Presenter:
Li-Ye Xiao, Univ. of Electronic Science and Technology of China, China
Abstract
This paper proposes a model based on a machine learning algorithm, extreme learning machine (ELM), and the pole-residue-based transfer function (TF) for parametric modeling of electromagnetic behavior of microwave components. Compared with the model based on the artificial neural network, the proposed ELM model can obtain the accurate results for microwave passive component design with the small training datasets due to its good iterative learning ability. The validity and efficiency of this proposed model is confirmed by a triple-mode filter.
TUIF2-4 :
Extreme Learning Machine for the Behavioral Modeling of RF Power Amplifiers
Authors:
Chengyu Zhang, Yuan-Yuan Zhu, Qian-Fu Cheng, Hai-Peng Fu, Jian-Guo Ma, Qi-Jun Zhang
Presenter:
Hai-Peng Fu, Tianjin Univ., China
Abstract
In this brief, an efficient approach using extreme learning machine (ELM) is first proposed for the behavioral modeling of radio frequency power amplifiers (RF PAs). As a single-hidden layer feedforward neural network algorithm, ELM offers significant speed advantages over conventional neural network learning algorithms. Compared to the existing behavioral modeling based on ANN, the proposed method also requires minimal human intervention. A Class-E PA is taken as an example for comparing ELM against traditional neural network learning algorithm. The modeling results of ELM for AM/AM and IMD3 agree well with the simulation results, and the speed advantage of the proposed method has also been confirmed.
TUIF2-5 :
An Analytical Approach for Electrical and Thermal Simulation of Branch-Line Coupler
Authors:
Sheng Ni, Min Tang, Lin-Sheng Wu, Junfa Mao
Presenter:
Min Tang, Shanghai Jiao Tong Univ., China
Abstract
An analytical approach based on the transmission line theory is presented for efficient electrical and thermal simulation of the branch-line coupler. The distributed power consumption of the structure is obtained by the classical transmission line theory. Further, with the thermal transmission line model, the analytical expression of temperature rise distribution (TRD) of the coupler is derived by using the odd/even-mode decomposition and the Green’s function method. The validity and high efficiency of the proposed method are demonstrated by the numerical example.
TUIF2-6 :
Pneumatically Tuned Microfluidic Meta-Atom SRR
Authors:
Robiatun Awang, Wayne Rowe
Presenter:
Wayne Rowe, Rmit Univ., Australia
Abstract
A fluidic split ring resonator (SRR) is proposed to achieve frequency tunability. An integrated microfluidic channel is employed in between the gaps of the fluidic SRR to harness pneumatic tuning by air injection/suction. An experimental investigation demonstrates that a frequency tuning of 3% can be achieved using air as the manipulating force to induce a small deflection in the SRR gap.
TUIF2-7 :
Fabrication of Waveguide Butler Matrix for Short Millimeter-Wave Using X-Ray Lithography
Authors:
Mitsuyoshi Kishihara, Akinobu Yamaguchi, Yuichi Utsumi, Isao Ohta
Presenter:
Mitsuyoshi Kishihara, Okayama Prefectural University, Japan
Abstract
The microfabrication technique based on X-ray lithography has recently been applied to construct PTFE-based microstructures. This paper attempts to fabricate an integrated waveguide Butler matrix for short millimeter-wave using X-ray lithography. First, a cruciform 3-dB directional coupler and an intersection circuit are designed at 180 GHz. Then, a 4x4 butler matrix with horn antennas is designed and fabricated. Finally, the measured radiation patterns of the Butler matrix are shown.
TUIF2-8 :
Design, Fabrication and Characterization of Compact 4-Bit RF MEMS Capacitor Bank in Standard CMOS 0.35µm Process
Authors:
Ahmed Abdel Aziz, Raafat Mansour
Presenter:
Ahmed Abdel Aziz, Univ. of Waterloo, Canada
Abstract
This paper reports on the design and fabrication of a 4-bit switched capacitor bank designed to operate over the frequency range of 3-10 GHz with a tuning range of up to 10:1. An opti-mized mask-less CMOS post-processing technique is used to fabricate the 0.6 mm x 0.9 mm capacitor bank. A procedure employing dry etching with cryogenic cooling is proposed to tune the residual stress in the beams. The capacitor was ana-lyzed both theoretically and experimentally. The analysis of the measured Q suggests an approach to enhance the capacitor’s Q. The measured results demonstrate the 16 different states covering the range of 0.15-1.2 pF with no sign of self-resonance up to 10 GHz.
TUIF2-9 :
Impact of Metallization on Performance of Plasmonic Photoconductive Terahertz Emitters
Authors:
Deniz Turan, Sofia Carolina Corzo-Garcia, Enrique Castro-Camus, Mona Jarrahi
Presenter:
Deniz Turan, Univ. of California, Los Angeles, United States
Abstract
Use of plasmonic contact electrodes in photoconductive emitters is very effective for generating high terahertz powers. This is because plasmonic electrodes concentrate a major portion of photo-generated carriers in their close proximity when excited by an incident optical pump beam. As a result, a large number of photocarriers are drifted to the terahertz radiating elements of the emitter within a sub-picosecond time-scale to efficiently contribute to terahertz generation. Au is a desired choice of metal for plasmonic contact electrodes due to its strong plasmonic enhancement factors at near-infrared wavelengths. However, it requires an adhesion layer to stick well to device substrates. We show that optical and electrical characteristics of the Au adhesion layer have significant impact on performance of plasmonic photo-conductive terahertz emitters. We demonstrate that use of Cr adhesion layer instead of Ti, which is used in existing plasmonic terahertz emitters, offers 50% enhancement in the generated terahertz power.
TUIF2-10 :
Lens-Integrated Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor for Plasmonic Terahertz Detection
Authors:
Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji, Tadao Ishibashi, Makoto Shimizu, Akira Satou
Presenter:
Tomotaka Hosotani, Tohoku Univ., Japan
Abstract
Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for high responsivity, room-temperature operating and high-speed THz detectors. However, their low light coupling efficiency is one of the serious concerns because of the large focused spot size of free space THz wave. To improve this, we examine shrinking the THz wave spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 6-fold enhancement by the silicon lens integration. Also, we show the incident THz wave frequency characteristic of the detector module is a product of the internal responsivity of ADGG-HEMTs and the light coupling efficiency by the silicon lens.
TUIF2-11 :
PAM-4 Receiver With Integrated Linear TIA and 2-Bit ADC in 0.13 µm SiGe:C BiCMOS for High-Speed Optical Communications
Authors:
Iria Garcia Lopez, Pedro Rito, Cagri Ulusoy, Ahmed Awny, Dietmar Kissinger
Presenter:
Iria Garcia Lopez, IHP Microelectronics, Germany
Abstract
The design and characterization of an optical receiver and demodulator for PAM-4 encoded data signals is presented. The prototype, fabricated in 0.13 µm SiGe:C BiCMOS technology, comprises a linear TIA followed by a 2-bit flash ADC, and is designed to support 100 Gb/s data rate while dissipating 650 mW. The TIA stage features 54 dBΩ differential transimpedance, 60 GHz bandwidth and less than 12 pA/√Hz average input referred current noise density. The module was measured to receive up to 24 GBd (setup-limited) PAM-4 PRBS7 signals at a BER of 4E-12 and 1E-13 for the LSB and MSB, respectively, with input amplitude of 580 µApp. Clear NRZ eye diagrams up to 50 Gb/s are reported, demonstrating the high-speed operation capability. The integration of TIA and dedicated ADC in the same chip allows for a custom design, optimized in terms of power dissipation and footprint, for the next generation optical transceivers.
TUIF2-12 :
A 680 MHz to 4 GHz 4RX-1TX SoC for Cognitive Radio Applications
Authors:
Tajinder Manku, Oleksiy Kravets, Anith Selvakumar, Chris Beg, Karanvir Chattha, Don Dattani, Stephen Devison, Tim Magnusen, Nebu Mathai, John McGinn, Zohaib Moti, Marco Nogueira, Trevor Pace, Mike Ravkine, Rahul Singh, Chris Snyder, William Suriaputra, Volodymyr Yavorskyy
Presenter:
Tajinder Manku, Cognitive Systems Corp, Canada
Abstract
As wireless technology continues to grow, new intelligent systems will be needed to help organize, manage, and interact with the surrounding RF environment. Such systems are based on a cognitive radio, where a device can learn and adapt to its RF environment. Motion detection, cybersecurity and spectrum sharing are few examples of such applications. However, for widespread adoption of such systems to be feasible, they must be small, cost-effective, maintainable, and offer high performance with low power consumption. Presented in this paper is a fully integrated cognitive radio platform, capable of RX/TX functionality from 680MHz to 4GHz. The platform is based on a custom SoC (40nm CMOS), which combines a wideband transceiver with a highly-accelerated digital vector processor and microprocessor for real-time signal analysis and application execution. Companion to the SoC are up to 16 specialized front-end ASICs (180nm SiGe) used for gain and band selection.
TUIF2-13 :
Demonstration of a Hybrid Self-Tracking Receiver With DoA-Estimation for Retro-Directive Antenna Systems
Authors:
Andreas Winterstein, Achim Dreher
Presenter:
Andreas Winterstein, German Aerospace Center, Germany
Abstract
Recent studies have proposed self-tracking receiver systems with direction-of-arrival (DOA) estimation based on phase-locked loops (PLLs). Up to now, such a system has not been implemented. In this work, we present a hybrid hardware setup
combing analog and digital signal processing, which provides this functionality. Successful phase detection and DOA estimation are demonstrated. The observed pointing errors are below 4.0°. The presented results are the proof-of-concept for the self-tracking receiver architecture. This technique can be directly applied to build retro-directive antennas (RDAs).
TUIF2-14 :
A 950 MHz RF 20 MHz Bandwidth Direct RF Sampling Bit Streamer Receiver Based on an FPGA
Authors:
Noriaki Tawa, Tomoya Kaneko
Presenter:
Noriaki Tawa, NEC Corp., Japan
Abstract
A 950 MHz direct RF sampling bit streamer receiver architecture based on a Field Programmable Gate Array (FPGA) is presented. In proposed architecture, an RF input signal is divided into the envelope and phase detectors. They are directly converted to two 1 bit streams using multi-gigabit transceivers on an FPGA, then are reconstructed into I/Q signal in an FPGA. The measured error vector magnitudes are 2.7 % and 8.4 % for QPSK 5 MHz and 64-QAM 20 MHz input signals respectively. The architecture provides major benefits of eliminating ADC devices, simplifying the inter-connection of RF front-end devices to digital base band and cutting the power consumption significantly for the multi-channel RF systems.
TUIF2-16 :
Inkjet-Printed Antenna-Electronics Interconnections in Passive UHF RFID Tags
Authors:
Han He, Jun Tajima, Lauri Sydänheimo, Hiroshi Nishikawa, Leena Ukkonen, Johanna Virkki
Presenter:
Johanna Virkki, Tampere Univ. of Technology, Finland
Abstract
We outline the possibilities of inkjet printing in fabrication of passive UHF RFID tag antennas and antenna-electronics interconnections on paper and polyimide substrates. In our method, the silver nanoparticle tag antenna is deposited directly on top of the IC fixture, in order to simplify the manufacturing process by removing one step, i.e., the IC attachment with conductive glue. Our wireless measurement results confirm that the manufactured RFID tags with the printed antenna-IC interconnections achieve peak read ranges of 8.5-10 meters, which makes them comparable to traditional tags with epoxy-glued ICs.
TUIF2-17 :
A Humidity Sensor Based on V-Band Slotted Waveguide Antenna Array
Authors:
David Hotte, Romain Siragusa, Yvan Duroc, Smail Tedjini
Presenter:
Smail Tedjini, Univ. Grenoble Alpes, France
Abstract
The paper presents the design of a new type of humidity sensor-tag operating in V-band. The proposed design combines the humidity sensitive properties of Kapton and a slotted waveguide antenna array. Design methodology is highlighted. Simulation and experimental results are reported which validate the design procedure and show promising perspectives.
TUIF2-18 :
Micrometric Displacement Sensor Based on Chipless RFID
Authors:
Etienne Perret
Presenter:
Etienne Perret, Grenoble Institute of Technology, France
Abstract
In this paper a chipless RFID tag has been used to realized displacement measurements. Displacements of 100 μm can be monitored with this technique coming from chipless RFID. Tagged objects can thus be identified and their displace-ments can be monitored at the same time with accuracy of a few microns.
TUIF2-19 :
HEMT Based RF to DC Converter Efficiency Enhancement Using Special Designed Waveforms
Authors:
Ricardo Correia, Nuno Carvalho
Presenter:
Nuno Carvalho, Instituto De Telecomunicacoes, Portugal
Abstract
In this paper a single and a dual band rectifier based on an Enhancement-mode Pseudomorphic High Electron Mobility Transistor (E-pHEMT) are proposed. Both rectifiers were designed with E-pHEMT devices with unbiased gates. This circuits were optimized to have high efficiencies at high power values, and are suited for high power wireless power transmitter approaches, due to its higher robustness when compared with diode based solutions.
On top of this the use of special designed waveforms, specially multisine type signals will be evaluated to increase the efficiency range at lower powers.
TUIF2-20 :
Differentially-Fed Charge Pumping Rectifier Design With an Enhanced Efficiency for Ambient RF Energy Harvesting
Authors:
Hao Zhang, Zheng Zhong, Yongxin Guo, Wen Wu
Presenter:
Hao Zhang, Nanjing University of Science and Technology, China
Abstract
In this paper, a differentially-fed charge pumping rectifier design is presented with an enhanced efficiency for ambient RF energy harvesting. Due to the differential signals induced by a delicately designed rat-race coupler, circuit topology of the modified Greinacher rectifier is simplified with an enhanced RF-to-dc power conversion efficiency (PCE) over low power ranges. Meanwhile, high output DC voltage is sustained for the requirements of an efficient DC-DC boosting converter. Results of simulation and measurement validate that an enhanced efficiency of more than 5% is achieved over ultralow power ranges from -20dBm to -10dBm and the output DC voltage sustains with its amplitude more than 0.7V at incident power of -10dBm.
13:30 - 15:10
TU3A:
State of the Art in Cryogenic Low Noise Amplifiers
Chair:
Marian Pospieszalski
Chair organization:
National Radio Astronomy Observatory
Co-chair:
Luciano Boglione
Co-chair organization:
Naval Research Laboratory
Location:
312
Abstract:
This session presents the latest developments of advanced cryogenic technologies for low noise amplifiers. This session starts with the results of a wide-band cryogenic SiGe MMIC LNA with an average noise temperature of 2.8K from 0.2 to 3.0 GHz. This is followed by a sub-milliwatt SiGe LNA from 4 to 8 GHz. Next, the low noise performance is given for a cryogenic LNA SKA band from 2 to 5 GHz. Following is the description of a unique development of a 2 finger InP HEMT design that results in stable cryogenic operation of a ultra-low noise Ka band LNA. Then, a cryogenic mm-wave LNA for V-band with noise temperature from 18 to 27K between 50 and 75 GHz is presented. Finally, a cryogenic W-band ALMA band 2+3 with an average noise temperature of 24K will conclude the session.
Presentations in this
session
TU3A-1 :
A Wideband Cryogenic SiGe LNA MMIC With an Average Noise Temperature of 2.8 K From 0.2–3 GHz
Authors:
Su-Wei Chang, Joseph Bardin
Presenter:
Su-Wei Chang, Univ. of Massachusetts, Amherst, United States
(13:30 - 13:40 )
Abstract
The design and characterization of a 0.3–3 GHz SiGe cryogenic low noise amplifier is presented. The integrated-circuit amplifier was implemented in the ST BiCMOS 9MW technology platform. At 15 K physical temperature, it achieves a gain greater than 22 dB, input and output return losses better than 10 dB, and an average noise temperature of 2.8 K over the 0.3–3 GHz frequency range. To the best of the authors’ knowledge, this amplifier achieves the best noise performance reported to date for an integrated SiGe low noise amplifier.
TU3A-2 :
A Sub-Milliwatt 4–8 GHz SiGe Cryogenic Low Noise Amplifier
Authors:
Shirin Montazeri, Joseph Bardin
Presenter:
Shirin Montazeri, Univ. of Massachusetts, Amherst, United States
(13:40 - 13:50 )
Abstract
A 4-8 GHz Silicon-Germanium (SiGe) cryogenic low-noise amplifier (LNA) was designed and implemented using GF BiCMOS8HP process. The amplifier provides 30-dB and 26-dB of gain while dissipating 760 μW and 580 μW DC power, respectively. The noise temperature is approximately 8K across the frequency band. To the best of the authors’ knowledge, this is the lowest reported power to date for a wide-band cryogenic integrated circuit LNA in this frequency range.
TU3A-3 :
Cryogenic LNAs for SKA Band 2 to 5
Authors:
Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk, Eunjung Cha, Arsalan Pourkabirian, Göran Alestig, John Halonen, Bengt Nilsson, Per-Ake Nilsson, Jan Grahn
Presenter:
Joel Schleeh, Low Noise Factory, Sweden
(13:50 - 14:10 )
Abstract
Four ultra-low noise cryogenic MMIC LNAs suitable for the Square Kilometer Array (SKA) band 2 to 5 (0.95 – 13.8 GHz) have been designed, fabricated, packaged and tested. The LNAs are based on 4x50, 8x50 and 16x50 µm HEMTs, designed for stable cryogenic operation, allowing the combination of good noise performance and return loss. The lowest noise temperatures measured in the four bands were 1.0 K, 1.2 K, 1.6 K and 2.6 K, respectively.
TU3A-4 :
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka-Band LNAs
Authors:
Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk, Per-Ake Nilsson, Stella Bevilacqua, Arsalan Pourkabirian, Piotr Starski, Jan Grahn
Presenter:
Eunjung Cha, Chalmers Univ. of Technology, Sweden
(14:10 - 14:30 )
Abstract
We have investigated the cryogenic stability of two-finger InP HEMTs aimed for Ka-band ultra-low noise amplifiers (LNAs). Unlike two-finger transistors with a large gate-width above 2 x 50 µm, the transistors with a small gate-width exhibit unstable cryogenic behavior. The instability is suppressed by adding a source air-bridge. The stabilizing effect of the air-bridge is demonstrated both on device and circuit level. A three-stage 24–40 GHz monolithic microwave integrated circuit (MMIC) LNA using a stabilized 100-nm HEMT technology is presented. The amplifier achieves a record noise temperature of 7 K at 25.6 GHz with an average noise of 10.6 K across the whole band at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB exhibiting very stable and repeatable operation. To our knowledge, this amplifier presents the lowest noise temperature reported so far for InP cryogenic LNAs covering the Ka-band.
TU3A-5 :
Cryogenic MMIC Low-Noise Amplifiers for V-Band
Authors:
Mikko Varonen, Lorene Samoska, Pekka Kangaslahti, Andy Fung, Rohit Gawande, Mary Soria, Alejandro Peralta, Robert Lin, Richard Lai, Xiaobing Mei, Stephen Sarkozy
Presenter:
Mikko Varonen, VTT Technical Research Centre of Finland, Finland
(14:30 - 14:50 )
Abstract
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in a 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors’ knowledge these are the lowest LNA noise temperatures for V-Band reported to date.
TU3A-6 :
Cryogenic W-Band LNA for ALMA Band 2+3 With Average Noise Temperature of 24 K
Authors:
Yulung Tang, Niklas Wadefalk, Jacob Kooi, Joel Schleeh, Giuseppe Moschetti, Jan Grahn, Per-Åke Nilsson, Arsalan Pourkabirian, Eunjung Cha, Silvia Tuzi
Presenter:
Yulung Tang, Low Noise Factory AB, Taiwan
(14:50 - 15:10 )
Abstract
A cryogenic low noise amplifier that operates across
the E and W-bands, from 65 GHz to 116 GHz, has been developed
using 0.1-μm InP HEMT technology. Such wideband performance
makes this work suitable for the ALMA telescope where two of its
bands, 67-90 GHz of Band 2 and 85-116 GHz of Band 3, can be
combined into one. At an ambient temperature of 5.5 K, this Wband
LNA demonstrates an average noise temperature of 24.7 K
with more than 21 dB gain and +/- 3.0 dB gain flatness from 65
GHz to 116 GHz. To the best knowledge of the authors, this combination
of bandwidth, gain flatness and noise temperature has not
been demonstrated before.
TU3B:
Innovative Waveguide Components
Chair:
Christian Damm
Chair organization:
Technische Univ. Darmstadt
Co-chair:
Chung-Tse Michael Wu
Co-chair organization:
Wayne State Univ.
Location:
313A
Abstract:
This session presents a number of innovative waveguide solutions for RF, microwave and mm-wave applications. In particular, tunable devices based on liquid crystals and substrate integrated waveguides are discussed. New design techniques for high density integration and planar waveguide fabrication are evaluated in terms of feasibility and performance.
Presentations in this
session
TU3B-1 :
Design of a Continuously Tunable W-Band Phase Shifter in Dielectric Waveguide Topology
Authors:
Roland Reese, Matthias Jost, Holger Maune, Rolf Jakoby
Presenter:
Roland Reese, Technische Univ. Darmstadt, Germany
(13:30 - 13:50 )
Abstract
This work presents a liquid crystal (LC) based phase
shifter in a dielectric waveguide (DW) topology consisting of core
and cladding for the W-band. For continuous tunability, a part
of the core material is replaced by liquid crystal. Furthermore,
suggestions of materials for designing such a DW, i.e. for core
and cladding, are given in this paper. In comparison to other
topologies, the advantage of this topology is that the necessary
electric biasing can be realized easily, by placing electrodes
directly on the cladding. With an electric biasing of +-550V,
a maximum differential phase shift of 430°, accompanied with
insertion losses between 2.8 to 5.5 dB with standard WR10
connections, could be achieved. The maximum figure of merit
is around 100 °/dB at 102 GHz.
TU3B-2 :
Interference Based W-Band Single-Pole Double-Throw With Tunable Liquid Crystal Based Waveguide Phase Shifters
Authors:
Matthias Jost, Roland Reese, Sönke Schmidt, Matthias Nickel, Holger Maune, Rolf Jakoby
Presenter:
Matthias Jost, Technische Univ. Darmstadt, Germany
(13:50 - 14:10 )
Abstract
This work presents an interference based W-band single-pole double-throw (SPDT) in rectangular waveguide and liquid crystal technology. In radiometers, this kind of SPDT can be used e.g. for switching to the calibration load for power calibration. The SPDT is designed with an E-plane power divider, two different paths for the phase shifting regions, being separated by 30mm to provide enough space for the used magnets for proof-of-concept, and a coupled line combiner, where the interference is taking place. Rexolite 1422 is serving as liquid crystal cavity. The matching is better than −12 dB between 88 GHz to 110 GHz, except a peak around 102 GHz. The insertion loss is less than 3 dB between 89GHz to 105 GHz, while exhibiting an isolation of at least 9 dB in this frequency range. From 90GHz to 100 GHz, isolation is even between 10 dB to 12 dB.
TU3B-3 :
In-Plane Hollow Waveguide Crossover Based on Dielectric Insets for Millimeter-Wave Applications
Authors:
Matthias Jost, Roland Reese, Holger Maune, Rolf Jakoby
Presenter:
Matthias Jost, Technische Univ. Darmstadt, Germany
(14:10 - 14:30 )
Abstract
This paper presents an in-plane hollow waveguide crossover for W-band frequencies. It can be implemented e.g. into a Butler matrix, to simplify the fabrication process significantly. It is based on a partially dielectric filling of the waveguide, focussing the field in the center. The dielectric is placed in the center of a hollow waveguide crossing and has a star-shape. Inside the dielectric filled region, a higher order mode propagation is possible, which has no significant influence on the overall performance of the crossover. It shows an insertion loss between 0.8 dB to 1.0 dB in the frequency range of 100 GHz to 109 GHz, while the matching is better than −12 dB and even down to −30 dB at 108 GHz. The isolated ports show transmission coefficients better than −20 dB in the frequency range between 99 dB to 109 dB and even down to −40 dB around 107 GHz.
TU3B-4 :
A Low Loss and Self-Packaged Patch Coupler Based on SISL Platform
Authors:
Yongqiang Wang, Kaixue Ma, Shouxian Mou
Presenter:
Yongqiang Wang, Univ. of Electronic Science and Technology of China, China
(14:30 - 14:50 )
Abstract
This paper proposes a low loss and self-packaged patch coupler based on substrate integrated suspended line (SISL) platform. Due to the benefit of self-packaging, the radiation loss of the patch can be reduced to the minimum. By cutting out the sub-strate as much as possible while ensuring mechanical strength, the dielectric loss will be further reduced. By connecting the metal layers on both sides of the substrate with via holes, the conductor loss can be further reduced. The measurement results and the simulation results of the fabricated SISL patch coupler at 6 GHz are well agreed. The measured insertion loss is only around 0.15 dB. From 5.5 GHz to 6.6 GHz, the measured phase imbalance is 90°±1° and the measured amplitude imbalance is smaller than 0.6 dB. The measured loss is much smaller than that of the previous designs.
TU3B-5 :
High Performance Air-Filled Substrate Integrated Waveguide Filter Post-Process Tuning Using Capacitive Post
Authors:
Tifenn Martin, Anthony Ghiotto, Tan Phu Vuong, Frédéric Lotz, Pierre Monteil
Presenter:
Tifenn Martin, Univ. of Bordeaux, France
(14:50 - 15:10 )
Abstract
This paper presents an air-filled substrate integrated waveguide (AFSIW) filter post-process tuning technique. The emerging high-performance AFSIW technology is of high interest for the de-sign of microwave substrate integrated systems based on low-cost multilayer printed circuit board process. However, to comply with stringent specifica-tions, especially for spatial, aeronautical and safety applica-tions, a filter post-process tuning technic is desired. AFSIW single pole filter post-process tuning using a capacitive post is theoretically analyzed. It is demonstrated that a tuning of more than 3% of the resonant frequency is achieved at 21 GHz using a 0.3 mm radius post with a 40% insertion ratio. For experi-mental demonstration, a fourth-order AFSIW bandpass filter operating in the 20.88 to 21.11 GHz band is designed. Due to fabrication tolerances, it is shown that its performances are not in line with expected results. Using capacitive post tuning, char-acteristics are improved and agree with optimized results.
TU3C:
Wearable Systems and Enabling Technologies for Internet of Things (IoT)
Chair:
Vijay Nair
Chair organization:
Intel Corp.
Co-chair:
Kavita Goverdhanam
Co-chair organization:
US Army CERDEC
Location:
313B
Abstract:
This session focuses on enabling technologies and system level considerations for advancing wearable electronics for IoT applications. Topics include system analysis of wireless sensor nodes, frequency-reconfigurable fabric antennas, bio-monitoring systems, stretchable microwave devices and envelope detectors for IoE sensor network applications.
Presentations in this
session
TU3C-1 :
In-Sensor Analytics and Energy-Aware Self-Optimization in a Wireless Sensor Node
Authors:
Ningyuan Cao, Saad Bin Nasir, Shreyas Sen, Arijit Raychowdhury
Presenter:
Ningyuan Cao, Georgia Institute of Technology, United States
(13:30 - 13:50 )
Abstract
Abstract—With the proliferation of distributed sensors and In- ternet of Thing end-nodes, aggregate data transfer to the back- end servers in the cloud is expected to become prohibitively large which not only results in network congestion, but also high energy expenditure of sensor nodes. This motivates in-situ data analytics that can perform context-aware acquisition and processing of data; and transmit data only when required. This paper presents a camera based wireless sensor node with in-sensor computation and wireless communication and end-to-end system optimization. Depending on the amount of information content and wireless channel quality, the system chooses the minimum-energy operating- point by dynamically adjusts processing depth (PD) and power amplifier (PA) gain while reducing data volume the network has to handle. We demonstrate a complete end-to-end system and measure 3.7× reduction in energy consumption compared to a baseline design where only rudimentary image compression is performed.
TU3C-2 :
A Varactor-Tuned Frequency-Reconfigurable Fabric Antenna Embedded in Polymer: Assessment of Suitability for Wearable Applications
Authors:
Roy B. V. B. Simorangkir, Yang Yang, Karu Esselle, Yinliang Diao
Presenter:
Roy B. V. B. Simorangkir, Macquarie Univ., Australia
(13:50 - 14:10 )
Abstract
In this paper, we present a novel class of wearable antennas that are flexible, electronically tunable, and robust. They consist of conductive fabric parts, used as the radiator, with polydimethylsiloxane (PDMS) polymer utilized to form the substrate as well as the full encapsulation of the radiator including its electronic tuning elements. To validate the concept, a prototype that provides frequency tuning from 2.3 to 2.65 GHz has been fabricated and tested. The fabrication process is detailed and experimental investigations on its suitability for wearable applications are presented. To assess the antenna robustness, its reconfigurability under severe physical deformations has been studied through washing the antenna and also by wrapping it on the head and wrist of a UWB human muscle equivalent phantom. The antenna's effect on body has also been investigated through Specific Absorption Rate measurement. The results confirm that the antenna is a promising candidate for modern wearable devices.
TU3C-3 :
Wearable Sensors Based on a High Sensitive Complementary Split-Ring Resonator for Accurate Cardiorespiratory Sign Measurements
Authors:
Ta-Chung Chang, Chia-Ming Hsu, Kuan-Wei Chen, Chin-Lung Yang
Presenter:
Chin-Lung Yang, National Cheng Kung Univ., Taiwan
(14:10 - 14:30 )
Abstract
This paper presents a novel wearable complementary split-ring resonator (CSRR) sensor for smart clothing to measure cardiorespiratory signs. The cardiorespiratory vital signs can be measured in the frequency and amplitude deviations of CSRR caused by the slight displacement from the chest. The heart signals can be extracted from the respiratory signals simultaneously by using a high sensitive CSRR sensor. Based on the proposed approach, the heartbeat can be significantly compared with traditional vital sign detection. Experiment results reveal that the CSRR can determine accurately the physiological signals. From the tracking resonant frequency and amplitude S21, the heartbeat rate and respiratory rate has errors of 0.01% and 0.04%, respectively. At a fixed frequency of 1.1 GHz, cardiorespiratory signals are measured to achieve low error of 0.01%. The proposed method is promising for healthcare applications.
TU3C-4 :
Characterization of Stretchable Serpentine Microwave Devices for Wearable Electronics
Authors:
Tammy Chang, Casey Wojcik, Yewang Su, John Rogers, Thomas Lee, Jonathan Fan
Presenter:
Tammy Chang, Stanford Univ., United States
(14:30 - 14:50 )
Abstract
Serpentine interconnects, made stretchable by patterning copper traces into serpentine mesh geometries, are attractive for applications in wearable electronics. This paper studies the suitability of these structures for wireless devices at microwave frequencies, where the sub-wavelength dimensions of the serpentine pattern contribute to changes in electrical length and propagation loss. The effects of converting solid metal traces to serpentine geometries are quantified for microwave transmission lines and dipole antennas. In addition, the effects of stretching are characterized and measured for a fabricated dipole antenna.
TU3C-5 :
Analysis of Quadratic Dickson Based Envelope Detectors for IoE Sensor Node Applications
Authors:
Pouyan Bassirian, Jesse Moody, Steven Bowers
Presenter:
Pouyan Bassirian, Univ. of Virginia, United States
(14:50 - 15:10 )
Abstract
This paper presents a study of passive Dickson based envelope detectors operating in the quadratic small signal regime, specifically intended to be used in RF front end of sensing units of IoE sensor nodes. Critical parameters such as charge time, open-circuit voltage sensitivity (OCVS), input impedance, and output noise are studied and simplified circuits models are proposed to predict the behavior of the detector, resulting in practical design intuitions. There is good agreement between model predictions, simulation results and measurements of 14 representative test structures that were fabricated in a RF CMOS 130nm process.
TU3D:
Emerging Space Systems and Associated Technology
Chair:
Mohamed Abouzahra
Chair organization:
Massachusetts Institute of Technology, Lincoln Laboratory
Co-chair:
Rudy Emrick
Co-chair organization:
Orbital ATK
Location:
313C
Abstract:
Emerging small satellite systems technologies will be presented. Discussed application areas include remote sensing and U.S. Army applications. In addition, small satellite design for security and enabling technologies for small satellite maneuverability will be highlighted.
Presentations in this
session
TU3D-1 :
Evolution and Maturation of Small Space Microwave Technologies for U.S. Army Applications
Authors:
Mason Nixon, Mark Ray, John London III
Presenter:
Mason Nixon, US Army SMDC/ARSTRAT, United States
(13:30 - 13:50 )
Abstract
Key factors in the utility of small satellites are the responsiveness of orbiting space assets, the cost savings over larger, more durable satellites, and the potential benefit to the tactical user. As electronics and RF technologies become increas-ingly compact and more capable, small satellites offer many ad-vantages over their larger counterparts from technology refresh rate and timely access for the tactical user to significantly reduced launch costs. This paper reviews several small satellite-related development efforts for tactical military applications with an emphasis on the communications technologies being matured.
TU3D-2 :
Technology Development for Small Satellite Microwave Atmospheric Remote Sensing
Authors:
William Blackwell
Presenter:
William Blackwell, Massachusetts Institute of Technology, Lincoln Laboratory, United States
(13:50 - 14:10 )
Abstract
Recent advances in low-power millimeterwave low-noise amplifier technologies have enabled the hosting of high-performance atmospheric sounding instruments on very small satellites.The Microsized Microwave Atmospheric Satellite, second generation (MicroMAS-2), will demonstrate temperature sounding near 118 GHz and moisture sounding near 183 GHz. MicroMAS-2a and MicroMAS-2b are scheduled to launch in 2017. The Microwave Radiometer Technology Acceleration (MiRaTA) cubesat will launch in 2017, and will fly a tri-band sounder (60, 183, and 206 GHz) and a GPS radio occultation (GPS-RO) sensor. Both MicroMAS and MiRaTA are 3U CubeSats. The Time-Resolved Observations of Precipitation structure and storm Intensity with a Constellation of Smallsats (TROPICS) mission utilizes these technology advancements in a complete mission with approximately 12 CubeSats similar in capability to MicroMAS-2. TROPICS is expected to launch in 2020. The Earth Observing Nanosatellite-Microwave (EON) concept is a 12U CubeSat designed to provide most of the capabilities of current operational microwave sounders.
TU3D-3 :
Design for Security: Guidelines for Efficient, Secure Small Satellite Computation
Authors:
Kyle Ingols
Presenter:
Kyle Ingols, Massachusetts Institute of Technology, Lincoln Laboratory, United States
(14:10 - 14:30 )
Abstract
Historically, satellites have been built with large budgets and expensive, bespoke, "rad-hard" technology. For typical low Earth orbit missions, however, designers can now leverage commercial components to reduce cost and development time. Commercial processors provide these satellites with computational horsepower comparable to terrestrial desktop systems ... which leads to the temptation of terrestrial desktop software and all of the cyber security headaches and mistakes made in that realm over the years. We highlight key differences in processing environments, identify common tools for security design and application, and provide design guidelines that can lead to more secure on-orbit processing while remaining mindful of the overarching drumbeat of "smaller, faster, cheaper."
TU3D-4 :
Enabling Microsatellite Maneuverability: A Survey of Microsatellite Propulsion Technologies
Authors:
Robert Legge, Emily Clements, Adam Shabshelowitz, Laura Bayley
Presenter:
Laura Bayley, MIT Lincoln Laboratory
(14:30 - 14:50 )
Abstract
Microsatellites, commonly defined as having a mass of less than 100kg, are being developed and launched with
increasing frequency over the past decade. While this interest has led to rapid development of miniaturized electronics, communications and sensing components, microsatellites still lack significant maneuvering capability. Maneuverable microsatellites have the potential to allow for cost-effective satellite constellations, and disaggregated systems needing long-duration formation flying. This paper surveys and provides a performance comparison for some promising microsatellite propulsion technologies. Two recently developed propulsion technologies, green monopropellants and electrosprays, show great promise for increasing the maneuverability of severely volume and power constrained microsatellites.
TU3D-5 :
A 666 GHz Demonstration Crosslink with 9.5 Gbps Data Rate
Authors:
William Deal, Tyler Foster, Mark Wong, Matthew Dion, Kevin Leong, Xiao Bing Mei, Alexis Zamora, Kevin Kanemori, Louis Christen, Jack Tucek, Mark Basten, Kenneth Kreischer
Presenter:
William Deal, Northrop Grumman Corporation
(14:50 - 15:10 )
Abstract
Emerging small satellite systems technologies will be presented. Discussed application areas include remote sensing and U.S. Army applications. In addition, small satellite design for security and enabling technologies for small satellite maneuverability will be highlighted.
TU3E:
Advanced GaN Transistor Modeling With Self-Heating and Trapping Effects
Chair:
Paul Tasker
Chair organization:
Cardiff University
Co-chair:
Shahed Reza
Co-chair organization:
Sandia National Laboratories
Location:
314
Abstract:
It is becoming very important that large signal models for GaN transistors can accurately account for self-heating and trapping effects. In this session, a range of solutions addressing this problem are presented encompassing both compact and physical model formulations.
Presentations in this
session
TU3E-1 :
Implementation of Self-Heating and Trapping Effects in Surface Potential Model of AlGaN/GaN HEMTs
Authors:
Qingzhi Wu, Yuehang Xu, Zhigang Wang, Lei Xia, Jiang Hu, Bin Kong, Bo Yan, Ruimin Xu
Presenter:
Qingzhi Wu, Univ. of Electronic Science and Technology of China, China
(13:30 - 13:50 )
Abstract
The self-heating and charge trapping effects are implemented in surface-potential (SP) based large signal model of AlGaN/GaN HEMTs in this paper. The self-heating effect (SHE) is incorporated into nonlinear current model by embedding temperature increment into free-carrier mobility model. Moreover, the dispersion due to trapping effect is modeled through an effective gate-source voltage based methods. The experimental results show that the proposed model can accurately predict the static (DC) and pulsed-gate-and-drain IV (PIV) characteristics of the device over a wide bias. And the small-signal and large-signal behavior is also verified with good accuracy.
TU3E-2 :
A Drain Lag Model for GaN HEMT Based on Chalmers Model and Pulsed S-Parameter Measurements
Authors:
Peng Luo, Olof Bengtsson, Matthias Rudolph
Presenter:
Peng Luo, Ferdinand-Braun-Institut Leibniz-Institut für Höch, Germany
(13:50 - 14:10 )
Abstract
This paper addresses a novel approach account for trapping effects in the large-signal description of GaN HEMTs. Instead of relying on an internal effective gate voltage, which is not very intuitive, it is investigate how the Chalmers (Angelov) model parameters are altered by trapping. It is verified that such an approach enables reliable load-pull prediction over a wide range of drain bias voltages. In addition, appropriately scaled parameters are shown to allow for a good estimation of large-signal performance even if the model itself misses a dedicated trapping description.
TU3E-3 :
Extraction of a Trapping Model Over an Extended Bias Range for GaN and GaAs HEMTs
Authors:
Jabra Tarazi, James Rathmell, Anthony Parker, Simon Mahon
Presenter:
Anthony Parker, Macquarie Univ., Australia
(14:10 - 14:30 )
Abstract
A simple procedure for extracting parameters of a bias-dependent trap model for GaN and GaAs is presented. The extraction is achieved based on a mapping of the steady-state trap-center potential for a representative range of the bias voltages. The circuit model of trapping is verified in the process. The time constant for emission is also extracted. It is demonstrated that the model is able to predict device response and time constants in both capture and emission states. Bias-dependence of trapping and associated time constants is successfully modeled.
TU3E-4 :
A Temperature Dependent Empirical Model for AlGaN/GaN HEMTs Including Charge Trapping and Self-Heating Effects
Authors:
An-Dong Huang, Zheng Zhong, Yong-Xin Guo, Wen Wu
Presenter:
An-Dong Huang, National Univ. of Singapore, Singapore
(14:30 - 14:50 )
Abstract
This paper presents a temperature dependent empirical model for GaN HEMTs with the consideration of charge trapping and self-heating effects. A new 13-element drain current source (Ids) model is proposed. The current dispersion deduced by trapping and thermal effects is generally modeled by Taylor expansion, and for the first time, the dispersion related coefficients are rigorously derived to be the combination of analytical Ids functions. The Ids model is manifested by the accurate prediction of massive measured PIVs with various quiescent biases and power dissipation. The large signal model is implemented in Advanced Design System (ADS), and the simulations of both DC and RF characteristics well agree with the measurements
TU3E-5 :
A New Compact Model for AlGaN/GaN HEMTs Including Self-Heating Effects
Authors:
Zhang Wen, Yuehang Xu, Qingzhi Wu, Yong Zhang, Ruimin Xu, Bo Yan
Presenter:
Zhang Wen, University of Electronic Science and Technology of China, China
(14:50 - 15:10 )
Abstract
This paper presents a new compact electrothermal model for GaN high electron mobility transistors (HEMTs). An analytic and succinct expression for the drain current Ids is acquired by combining surface potential based method and channel division method. Self-heating effects are described in the model by intro-ducing an empirical expression for the critical electric field Ec as a function of temperature and gate voltage. The presented I-V model can accurately fit DC measurements. Furthermore, good agreement between RF simulations and measurements can be achieved by substituting the I-V model in this paper for the original Ids module in a compact large-signal model.
TU3F:
3-D Tunable and Reconfigurable Filters
Chair:
Eric Naglich
Chair organization:
Naval Research Laboratory
Co-chair:
Xun Gong
Co-chair organization:
Univ. of Central Florida
Location:
315
Abstract:
This session showcases several distributed tunable and reconfigurable filters utilizing metal and substrate-integrated waveguide resonators. A new topology for highly-reconfigurable filters that can be reconfigured between bandpass, bandstop, and filter cascade functions will be discussed in addition to filters that provide absorptive, balun, and constant absolute bandwidth functionality. A high-Q, many-state waveguide iris reconfiguration technique will also be presented. Finally, a miniaturization technique for tunable cavity filters using the TE211 mode will be described.
Presentations in this
session
TU3F-1 :
K-Band Tunable Cavity Filter Using Dual TE211 Mode
Authors:
Changsoo Kwak, Manseok Uhm, Inbok Yom
Presenter:
Changsoo Kwak, Electronics and Telecommunications Research Instit, Republic of Korea
(13:30 - 13:50 )
Abstract
In this paper, a K-band tunable cavity resonator filter is intro-duced. The tunable filter uses a dual TE211 mode cavity to reduce the size of the filter. To improve the tuning range of a pseudo-low pass filter that uses short irises, dummy iris is introduced. To enhance selectivity at band edge, additional cavity is introduced. A transmission zero generated by the additional cavity is con-trolled by only the cavity. To extend the rejection band, we use interaction between TE211 mode and adjacent modes. We fabri-cate and test the two-cavity, three-transmission zero tunable fil-ters to verify the design results.
TU3F-2 :
A Four-State Iris Waveguide Bandpass Filter With Switchable Irises
Authors:
Liang Gong, King Yuk Chan, Rodica Ramer
Presenter:
Liang Gong, Univ. of New South Wales, Australia
(13:50 - 14:10 )
Abstract
This paper proposed a new scheme of switching high-Q waveguide iris bandpass filters into different bands without using bulky components. Instead of constructing the filter using only metal, our design presents an assemblage of individual waveguide resonant cavities and dielectric substrate laminates integrated with RF MEMS switches. As a demonstration of the concept, a two-pole filter with four switchable passbands centered from 12.4 GHz to 14.6 GHz (18% of tunable range) with equal bandwidth has been presented. An unloaded Q-factor better than 1700 has been achieved for each state. The switches, with three different dimensions, can be actuated by three different pull-in voltages. This allows biasing them, by a single bias signal, into various states where the characteristics of the inverters are reconfigured, resulting in shifts of the passband.
TU3F-3 :
A 1.9–2.6 GHz Filter With Both Bandpass-to-Bandstop Reconfigurable Function and Bandpass-and-Bandstop Cascading Function
Authors:
Tao Yang, Gabriel Rebeiz
Presenter:
Tao Yang, Univ. of California, San Diego, China
(14:10 - 14:30 )
Abstract
In this paper, a novel tunable filter with multiple tuning functions is proposed. The filter can be used as a 4th-order bandpass-to-bandstop reconfigurable filter for passband or stopband tuning, and also as a 2nd-order bandpass filter cascaded by a 2nd-order bandstop filter for passband tuning with controllable transmission zeroes. In each mode, both the frequency and bandwidth can be controlled within a wide range, demonstrating excellent tuning flexibility and capabilities. The filter topology is expected to find applications in modern wireless standards such as carrier aggregation and cognitive radios.
TU3F-4 :
Constant-Absolute-Bandwidth Frequency-Tunable Half-Mode SIW Filter Containing No Tunable Coupling Structures
Authors:
Seunggoo Nam, Boyoung Lee, Juseop Lee
Presenter:
Seunggoo Nam, Korea Univ., Republic of Korea
(14:30 - 14:50 )
Abstract
A new half-mode frequency-tunable SIW (substrate-integrated waveguide) bandpass filter with a constant absolute bandwidth is presented in this paper. For achieving the constant bandwidth, we have developed new external and internal coupling structures capable of exhibiting specified coupling values over the frequency tuning range of the presented filter. Hence, the presented filter employs no tuning components in the coupling structures and this avoids the insertion loss increase due to tuning components. For verification, a second-order filter has been designed, fabricated, and measured. The filter has the insertion loss smaller than 2.0 dB over the frequency tuning range from 1.85 GHz to 2.3 GHz.
The bandwidth slightly varies from 136 MHz to 142 MHz.
TU3F-5 :
L-Band High-Q Tunable Quasi-Absorptive Bandstop-to-All-Pass Filter
Authors:
Wei Yang, Mark Hickle, Dimitra Psychogiou, Dimitrios Peroulis
Presenter:
Wei Yang, Purdue Univ., United States
(14:50 - 15:00 )
Abstract
This paper presents a high-Q tunable quasi-absorptive band-stop-to-all-pass filter in the 1.1 to 2 GHz frequency range. The filter can continuously tune from an all-pass response to an ab-sorptive bandstop response with high isolation (70 dB) across its entire frequency range. The insertion loss in its all-pass state var-ies from 2.27 to 3.14 dB. The filter topology requires only one tuning element per resonator. The filter topology is implemented with evanescent-mode cavity resonators and tuned with low-power piezoelectric actuators. The extracted unloaded resonator Q-factor is 400.
TU3F-6 :
A Widely-Tunable Substrate-Integrated Balun Filter
Authors:
Mark Hickle, Dimitrios Peroulis
Presenter:
Mark Hickle, Purdue Univ., United States
(15:00 - 15:10 )
Abstract
A novel differential coupling structure for tunable evanescent-mode cavity resonators is presented in this paper. The coupling structure is very simple and compact, and presents no design or fabrication challenges relative to a comparable single-ended coupling structure. This new coupling structure is used to realize a high-performance 3-pole tunable balun bandpass filter, which integrates the functionalities of a tunable bandpass filter and a balanced-to-unbalanced transformer (balun). The filter tunes from 3.2 to 6.1 GHz, and has a nominally 2.4% 3-dB fractional bandwidth. It demonstrates state-of-the-art measured amplitude and phase balance among tunable balun filters, with less than 0.2 dB and 0.9 degrees of in-band amplitude and phase imbalance across its entire tuning range.
TU3G:
Functional Materials for RF and Microwave Control Applications
Chair:
Tony Ivanov
Chair organization:
Army Research Lab
Co-chair:
Amir Mortazawi
Co-chair organization:
Univ. of Michigan
Location:
316A
Abstract:
This session covers functional materials for RF applications including phase-change materials, tunable & switchable dielectrics, and thin-film magnetic materials. Innovative Vanadium oxide switches are presented for mm-wave applications, and the state-of-the art in germanium telluride devices is also discussed, including new contributions relating to the power handling of these devices. A thick-film BST technology is introduced for potential application in the dynamic load modulation for GaN power amplifiers, and recent advances in thin-film BST for switchable acoustic resonators is reviewed. A novel isolator based on inket-deposited magnetic material is also included.
Presentations in this
session
TU3G-1 :
Fabrication and Characterization of VO2-Based Series and Parallel RF Switches
Authors:
Junwen Jiang, Grigory Chugunov, Raafat Mansour
Presenter:
Junwen Jiang, Univ. of Waterloo, Canada
(13:30 - 13:50 )
Abstract
This paper presents two Vanadium Oxide (VO2)-based RF switches – one series switch and one parallel switch. A copper-based fabrication process used for fabricating the switches is described in details. The VO2 films of the fabricated switches are characterized with X-ray diffraction and atomic force microscopy to ensure optimal film quality. Simulations results are presented for both switches up to 75 GHz. The measured results demon-strate an insertion loss of better than 0.4 dB and an isolation close to 30 dB up to 20 GHz.
TU3G-2 :
Thick-Film MIM BST Varactors for GaN Power Amplifiers With Discrete Dynamic Load Modulation
Authors:
Sebastian Preis, Daniel Kienemund, Nikolai Wolff, Holger Maune, Rolf Jakoby, Wolfgang Heinrich, Olof Bengtsson
Presenter:
Sebastian Preis, Ferdinand-Braun-Institut, Germany
(13:50 - 14:10 )
Abstract
Due to their extremely low static current consumption, varactors based on BST are perfect devices for realization of tunable and re-configurable components. This work presents fully screen-printed MIM thick-film BST varactors used to tune the load impedance of GaN HEMTs. The varactor tuning voltage is supplied in discrete steps using a high-speed GaN-based modu-lator. Modulated measurements with LTE and WCDMA signals show, for the first time, the functionality of a BST-based load modulation system and the power consumption of the load-modulation in dynamic operation. Using discrete dynamic load modulation, an average PAE of 27.3% was measured for the LTE signal with an ACLR below -45 dB.
TU3G-3 :
Recent Advances in Fabrication and Characterization of GeTe-Based Phase-Change RF Switches and MMICs
Authors:
Pavel Borodulin, Nabil El-Hinnawy, Carlos Padilla, Matthew King, Daniel Johnson, Robert Young
Presenter:
Pavel Borodulin, Northrop Grumman Mission Systems, United States
(14:10 - 14:30 )
Abstract
Recent progress in device fabrication and characterization of GeTe-based phase-change RF switches has yielded switches with tens of thousands of switching cycles and μs-level switching times, bringing these switches one step closer to practical implementation into re-configurable MMICs and systems.
TU3G-4 :
A Half Mode Inkjet Printed Tunable Ferrite Isolator
Authors:
Farhan Abdul Ghaffar, Mohammad Vaseem, Joey Bray, Atif Shamim
Presenter:
Farhan Abdul Ghaffar, King Abdullah Univ. of Science and Technology, Saudi Arabia
(14:30 - 14:40 )
Abstract
A novel half mode waveguide based ferrite isolator design is presented in this work. For the first time, tunability of the isolation band is demonstrated for a ferrite isolator. Instead of using the conventional antisymmetric bias isolator requires a single direction of magnetic bias field. YIG is used as the substrate for the device. The metallic walls of the waveguide are realized using inkjet printing. The magnetic biasing applied to the waveguide causes the RF waves to experience negative permeability in one direction of propagation hence providing isolation for this direction. For an applied bias of 3000 Oe, the device provides a maximum IFM of 76.7 dB at 7.5 GHz. The isolation band can be controlled by changing the applied magnetostatic bias. As the bias is varied from 1500 Oe to 3500 Oe the center frequency of the isolation band varies from 4.45 GHz to 9 GHz.
TU3G-5 :
Investigation of ON-State Power Handing Dependence on Number of Cycles for Germanium Telluride RF Switches
Authors:
Sami Hawasli, Leonard De La Cruz, Nabil El-Hinnawy, Pavel Borodulin, Mathew King, Robert Young, Mona Zaghloul, Tony Ivanov
Presenter:
Sami Hawasli, Army Research Lab, United States
(14:40 - 15:00 )
Abstract
The dependence of on-state Germanium Telluride (GeTe) RF power handing as a function of device cycling is presented. The data is also compared to computer based models in order to determine a possible method of failure at high RF input powers. The device is thermally actuated by an embedded Tungsten heater and tested at 1.8GHz. The measurements are compared to a computer based model. The data shows the power handling improves as the device is continually cycled. The results suggest the devices fail due to limiting the current's cross sectional area causing current crowding and excess heat generation.
TU3G-6 :
High Qm×Kt2 Intrinsically Switchable BST Thin Film Bulk Acoustic Resonators
Authors:
Milad Zolfagharloo Koohi, Seungku Lee, Amir Mortazawi
Presenter:
Milad Zolfagharloo Koohi, Univ. of Michigan, United States
(15:00 - 15:10 )
Abstract
Intrinsically switchable thin film bulk acoustic resonator (FBAR) based on Ba0.5Sr0.5TiO3 is designed and fabricated for a high Qm×Kt2 at the fundamental resonance mode. High Qm×Kt2 BST FBARs can be used to design low insertion loss switchable BAW filters. Measurement results for a BST FBAR show a resonator mechanical quality factor (Qm) of 360 at the series resonance frequency of 2 GHz with a mechanical coupling coefficient (Kt2) of 8.6%. Qm×Kt2 is calculated to be 30.8, and to the best of authors’ knowledge, it is the highest value among the previously reported switchable BST resonators. The measured temperature coefficients of frequency (TCF) for the series and parallel resonance frequencies are -65 and -68 ppm/C, respectively. The negative TCF of the BST FBAR is partially compensated by addition of a SiO2 layer to the FBAR structure.
TU3H:
Integrated Circuits for Wireless Power Transfer
Chair:
Alessandra Costanzo
Chair organization:
Univ. di Bologna
Co-chair:
Jenshan Lin
Co-chair organization:
Univ. of Florida
Location:
316B
Abstract:
New High efficiency solutions, integrating antennas and ICs, are presented including implantable and wearable applications. Furthermore techniques combining data and Power Transfer are introduced.
Presentations in this
session
TU3H-1 :
A Wireless Power Receiver With an On-Chip Antenna for Millimeter-Size Biomedical Implants in 180 nm SOI CMOS
Authors:
Hamed Rahmani, Aydin Babakhani
Presenter:
Hamed Rahmani, Rice Univ., United States
(13:30 - 13:50 )
Abstract
In this paper, we present a 3 GHz biphasic RF power
harvesting system for biomedical wireless implantable
applications. The design includes an on-chip loop antenna, a six-stage
voltage rectifier, a low dropout voltage regulator, a power
management unit (PMU), and an array of low-noise differential
amplifiers for sensing bio potentials. The system is fabricated in a
180 nm SOI CMOS technology with a total area of 1.6×1.6 mm2
including an on-chip 1.2 nF storage capacitor. A power
management unit with an average current consumption of 10 nA,
which is 8× smaller than the state-of-the-art, divides the
operation of the system into two different phases. The system is
capable of delivering 1.21 mW to an external load that is fed by
an on-chip voltage regulator.
TU3H-2 :
A High-Efficiency Power Management IC With Power-Aware Multi-Path Rectifier for Wide-Range RF Energy Harvesting
Authors:
Shu-Hsuan Lin, Chen-Yi Kuo, Shao-Yung Lu, Yu-Te Liao
Presenter:
Chen-Yi Kuo, National Chiao Tung Univ., Taiwan
(13:50 - 14:10 )
Abstract
A highly-integrated CMOS power-management system with wide-range RF for ultra-high frequency (UHF) wireless energy harvesting is presented. To avoid environment-caused sudden power loss and to scavenge energy efficiently, the proposed power management system adopts power-aware rectifier architecture and adaptive DC-DC conversion ratios according to the input power level. The proposed system was fabricated in a 0.18-μm CMOS process. The system achieved a peak RF/DC conversion efficiency of 59%, a sensitivity of -11.6dBm, and a 13.5dB RF input range for at least 20% power efficiency at a 100KΩ load. At the high input power region (>-9dBm), the proposed architecture improves to about 15% efficiency when compared to a conventional rectifier followed by a linear regulator. The peak efficiency of the entire system is 37%.
TU3H-3 :
W-Band Energy Harvesting Rectenna Array in 65-nm CMOS
Authors:
Edoh Shaulov, Samuel Jameson, Eran Socher
Presenter:
Edoh Shaulov, Tel Aviv University, Israel
(14:10 - 14:20 )
Abstract
An innovative topology for W-band energy harvesting is proposed using 65-nm CMOS, including an on-chip antenna. The rectifying circuit is based on inverse operation of a differential Colpitts VCO and a loop on-chip antenna is coupled to the rectifying circuit. Occupying total area of 0.611 mm2, the harvester has a peak output power of 0.2mW with an efficiency of 6%, while the rectifier circuit itself achieved a measured efficiency of 21.5%. Implementing a 3x3 array of CMOS rectennas on a PCB enabled a x3.5 increase in harvested power at 95GHz.
TU3H-4 :
Simultaneous Wireless Power Transfer and Communication to Chip-Scale Devices
Authors:
Brandon Arakawa, Liuqing Gao, Yansong Yang, Junfeng Guan, Anming Gao, Ruochen Lu, Songbin Gong
Presenter:
Brandon Arakawa, Univ. of Illinois at Urbana-Champaign, United States
(14:20 - 14:30 )
Abstract
This paper reports a 2.48 GHz tri-coil and rectifier design implemented in a system that demonstrates simultaneous wireless power transfer and communication to a 0.1 mm by 0.1 mm coil. The tri-coil link and rectifier successfully rectified and demodulated a 20 dBm amplitude-shift keyed (ASK) RF signal modulated at a rate of 1 Mb/s. Additionally, a 5.7 GHz tri-coil link was fabricated to validate the frequency scalability of this technology platform for other unlicensed bands and was measured in a customized experimental testbed to account for the effects of lateral misalignment between coils. The 5.7 GHz tri-coil design had a measured peak RF power transfer efficiency of -29 dB with a vertical separation of 1 mm, which is ten times the load coil diameter.
TU3H-5 :
Open Loop Dynamic Transmitter Voltage Scaling for Fast Response and Wide Load Range Power Efficient WPT System
Authors:
Toru Kawajiri, Hiroki Ishikuro
Presenter:
Toru Kawajiri, Keio Univ., Japan
(14:30 - 14:50 )
Abstract
This paper presents a fast response wireless power delivery system with open loop dynamic transmitter voltage scaling technique to keep power efficiency in wide load range. In this technique, according to changing power consumption required in the receiving side, the driving voltage of the transmitter (TX) coil is properly adjusted for controlling transmission power. The transmitting power and switching loss can be reduced in proportion to the square of the driving voltage. Therefore, it can prevent decrease in power efficiency. To promote power control speed, the driving voltage is not locally regulated but automatically determined by the feedback loop of the total WPT system. The fabricated test chips in 180-nm LDMOS process achieved maximum power efficiency of 50.2% when the output power is 0.54W.The output power ranges from 0.03W to 0.54W. The ripple is kept within 3.5% even when the output power is abruptly changed by one order of magnitude.
TU3H-6 :
GaN HEMT Class-E Rectifier for DC+AC Power Recovery
Authors:
M. Nieves Ruiz Lavin, David Vegas, Jose-Ramon Perez-Cisneros, Jose A. Garcia
Presenter:
M. Nieves Ruiz Lavin, Univ. of Cantabria, Spain
(14:50 - 15:10 )
Abstract
A 915 MHz GaN HEMT-based Class-E rectifier is proposed in this paper to be used for DC+AC wireless power recovery. Taking advantage of the time reversal (TR) duality principle, the rectifier was derived from a Class-E inverter, whose output network was designed for high-efficiency operation over a wide range of resistive loads. The addition of an appropriate gate-side termination allows the device to be turned-on without an additional RF source for gate driving. The rectifier reduced sensitivity to load variation, as well as its capability for efficiently and linearly recovering the envelope of an AM RF excitation, were then characterized. An average efficiency of 82% has been measured for the combined RF-to-DC and RF-to-AC power conversion of a 1.6 W modulated carrier. Frequency multiplexing and frequency modulation alternatives for high-level DC+AC wireless power transmission are finally presented.
TU3I:
Women in Defense
Chair:
Kavita Goverdhanam
Chair organization:
U.S. Army
Co-chair:
Carolynn Kitamura
Co-chair organization:
Raytheon Company
Location:
316C
Abstract:
This session celebrates the technical impact of women in the microwave engineering field, with special emphasis on their contributions to leading edge defense technologies in the United States.
Presentations in this
session
TU3I-1 :
RF Interference Mitigation Techniques to Enable Radio Communications
Authors:
Richard Yeager, Kavita Goverdhanam
Presenter:
Kavita Goverdhanam, US Army CERDEC
(13:30 - 13:50 )
Abstract
RF interference mitigation for communication systems in spectrally congested and contested environments is a key to meeting the ever increasing need for reliable and resilient communication and data networks. Interference may come from known sources of interference as well as from unknown sources. The power level of interference experienced by a victim radio receiver may vary over a very wide range. Multiple interfering RF systems on the platforms of interest can be located very near radio systems on those platforms causing co-site interference.
TU3I-2 :
An Integrated Approach to Topside Design
Authors:
Betsy DeLong
Presenter:
Betsy DeLong, Naval Research Laboratory
(13:50 - 14:10 )
Abstract
Current U.S.Navy ships employ multiple federated Radio Frequency (RF) apertures to perform Radar, Electronic Warfare (EW),Communication(Comms),Signals collection, and Information Operations(I/O)functions. Historically, each function (and hence system) has its own aperture, electronics, operators, and logistics/maintenance infrastructure. This approach results in systems competing for limited space and optimum placement and results in an inefficient use of resources and Electro Magnetic Interference/Compatibility (EMI/EMC) problems.
TU3I-3 :
Cognitive Radar: Waveform Design for Target Detection
Authors:
Stacy Beun
Presenter:
Stacy Beun, Naval Research Laboratory
(14:10 - 14:30 )
Abstract
Cognitive radar is an emergent technique in modern radar system development. Cognitive radar achieves new levels of radar performance by leveraging mechanisms present in biologi-cal systems and incorporating them into the function and opera-tion of the radar system. Here recent developments and future directions of cognitive radar are presented with a focus on the de-tection of radar targets. These studies require a deeper examina-tion into both the nature of the operating environment and the characteristics of targets themselves. Additionally, sources of in-terference which serve to impact radar performance are examined under the framework of cognitive radar and promising interfer-ence mitigation techniques are reviewed. Index Terms—cognitive radar, adaptive waveform, target de-tection, waveform design, anti-interference
TU3I-4 :
A Polarization Technique for Mitigating Low-Grazing-Angle Radar Sea Clutter
Authors:
Molly Crane, David Mooradd, Mabel Ramirez
Presenter:
Molly Crane, Massachusetts Institute of Technology, Lincoln Laboratory
(14:30 - 14:50 )
Abstract
This session celebrates the technical impact of women in the microwave engineering field, with special emphasis on their contributions to leading edge defense technologies in the United States.
TU3I-5 :
High-Performance Transceiver Components for Defense Communications and Sensing
Authors:
Zoya Popovic
Presenter:
Zoya Popovic, Univ. of Colorado
(14:50 - 15:10 )
Abstract
University defense funding has over the years produced a number of innovations in components for communications and sensing related to national defense needs. This paper presents an overview of research centered around improvements of microwave and millimeter-wave transceivers and the potential impact of fundamental research on future military systems. For example, development of low-loss broadband passives implemented in new technologies such as micro-fabricated air coaxial transmission lines, results in improvements in power combining, filtering, noise and efficiency.
15:40 - 17:00
TU4A:
Non-Foster Circuits – Principles, Design Issues, and Applications
Chair:
Jay Banwait
Chair organization:
Harris Electronic Systems
Co-chair:
Steve Stearns
Co-chair organization:
Northrop Grumman Corporation
Location:
312
Abstract:
These four papers present the principles, design issues and some applications of non-Foster circuits. The papers discuss the NDT technique and other techniques for evaluating non-Foster circuit stability. The applications focus on very wide-band impedance matching networks for antennas that yield flat frequency response.
Presentations in this
session
TU4A-1 :
Circuit-Level Stability and Bifurcation Analysis of Non-Foster Circuits
Authors:
Almudena Suarez, Franco Ramirez
Presenter:
Almudena Suarez, Univ. of Cantabria, Spain
(15:40 - 16:00 )
Abstract
A stability analysis of a non-Foster matching network is presented. The investigation is carried out at two levels: considering an ideal implementation of the negative impedance inverter (NIC) and using detailed circuit-level descritions of all its active and passive components. The ideal NIC model will enable an analytical derivation of the characteristic system and the system poles, which will provide insight into the main instability mechanisms in these configurations. A good qualitative agreement is obtained with the circuit-level analyses, based on pole-zero identification and bifurcation detection methods. The impact of significant parameters, such as the biasing resistors or the value of the reactive component to be negated, is investigated in detail. A circuit-level methodology is proposed to obtain the stability boundaries and margins in an efficient and rigorous manner. For illustration, a non-Foster circuit based on a NIC has been manufactured and measured, obtaining very good agreement with the results.
TU4A-2 :
Design, Validation and Trade-Offs of Non-Foster Circuits
Authors:
Minu Jacob, Daniel Sievenpiper
Presenter:
Minu Jacob, Keysight Technologies, United States
(16:00 - 16:20 )
Abstract
Non-Foster networks are those whose reactance has a negative slope with frequency, and can thus overcome bandwidth limitations of many passive systems. The design parameters of a negative impedance convertor circuit (circuit configuration, transistor bias) used to generate non-Foster impedances will depend on the load impedance at the output of the non-Foster circuit, the frequencies of operation and requirements pertaining to a specific application (such as low noise or high linearity). Insights into the design, simulation, implementation and stability analysis of non-Foster circuits will be presented through measured results of a non-Foster matched cylindrical slot antenna. Simulation techniques that can accurately predict measurements will also be detailed. Further, noise and linearity measurements that match simulations will be shown for the same non-Foster matched antenna. A discussion of the trade-offs between bandwidth, loss, stability, noise and linearity of a non-Foster circuit will be helpful in optimizing non-Foster circuits for specific applications.
TU4A-3 :
Performance Improvement of an Electrically-Small Loop Antenna Matched With Non-Foster Negative Inductance
Authors:
Nikolay Ivanov, Viacheslav Turgaliev, Dmitry Kholodnyak
Presenter:
Dmitry Kholodnyak, St. Petersburg Electrotechnical University 'LETI', Russian Federation
(16:20 - 16:40 )
Abstract
The paper presents results of a comparative study of a loop electrically-small antenna (ESA) matching with non-Foster negative inductances. Two matching networks which differ in connection of the non-Foster element to the antenna are considered. In one case the negative inductance is connected to the antenna input whereas another case correspond to the antenna with the negative inductance connected in the middle of the loop symmetrically with respect to the antenna arms. Influence of the matching network architecture on the loop ESA performance is investigated. The second approach is shown beneficial with regard to providing of proper feeding of the loop antenna which results in a symmetrical radiation pattern.
TU4A-4 :
Non-Foster Circuit for Wideband Matching of High Frequency Helical Antenna
Authors:
Qi Tang, Hao Xin
Presenter:
Qi Tang, Univ. of Arizona, United States
(16:40 - 17:00 )
Abstract
This paper adopts normalized determined function (NDF) to analyze the stability of a non-Foster matched antenna. A -40 pF negative capacitor is achieved at high frequency (HF). The neg-ative capacitor is connected to the input of a 2-meter height helical antenna for wideband cancellation of the large input reactance of the antenna at HF. Nyquist plots of NDFs are used to evaluate the stability of the non-Foster system with and with-out the stabilization resistor. The performance of input match-ing and efficiency improvement by non-Foster matching circuit is measured. The received signal power level can be increased by 20-30 dB from 3 to 13 MHz compared to without matching case, and about 15 dB improvement compared to a commercial well-matched HF antenna.
TU4B:
New Filter Design Methodologies
Chair:
Magdalena Salazar Palma
Chair organization:
Univ. of Madrid
Co-chair:
Jiasheng Hong
Co-chair organization:
Heriot-Watt Univ.
Location:
313A
Abstract:
This session will focus on direct matrix synthesis for in-line filters, synthesis of dual-wideband filters with composite series/shunt resonators, group-delay based spaced mapping techniques and single/multi-band filter design using generalized stub-loaded circuits.
Presentations in this
session
TU4B-1 :
Direct Matrix Synthesis for In-Line Filters With Transmission Zeros Generated by Frequency-Variant Couplings
Authors:
Yuxing He, Gang Wang, Liguo Sun, Lu Wang, Rong Zhang, Gerard Rushingabigwi
Presenter:
Lu Wang, Univ. of Science and Technology of China, China
(15:40 - 16:00 )
Abstract
A general approach for in-line filters that contain a set of frequency-variant couplings is presented in this work. By utilizing an absolute matrix transformation process, the synthesis is distinctive from all other similar literatures because no optimization is required. In result, it is shown that multiple transmission zeros can be individually generated by the frequency-variant couplings. Moreover, some unique topologies where in-line frequency-variant couplings are connected with traditional extracted-pole sections and cross-coupled structures are introduced. For validation of the proposed approach, a group of examples with practical results are demonstrated.
TU4B-2 :
Synthesis and Design of Dual-Wideband Filter With Composite Series and Shunt Resonators
Authors:
Zhiliang Li, Ke-Li Wu
Presenter:
Zhiliang Li, Chinese Univ. of Hong Kong, Hong Kong
(16:00 - 16:20 )
Abstract
This paper presents a novel dual-wideband bandpass filter comprising of composite series and shunt resonators and its direct synthesis and design theory. The composite series and shunt resonators can produce a transmission pole (TP) as well as a transmission zero (TZ) flexibly. A shunt capacitor at input/output (I/O) port is introduced to contribute an extra TP. A dual-wideband response with high skirt-selectivity can be achieved by appropriately arranging the TPs and TZs. To synthesize the lumped element prototype of filter, the filtering function is firstly obtained by iteratively solving a deterministic linear problem and the circuit model is found by a circuit extraction procedure. As an example, a dual-wideband bandpass filter with fractional bandwidths of 40% and 20% at center frequencies of 1 GHz and 2 GHz is directly synthesized, fabricated and measured. An expected characteristic is obtained.
TU4B-3 :
A Sequentially Coupled Filter Design Approach Using the Reflected Group Delay Method and the Implicit Space Mapping Technique
Authors:
Xiaolin Fan, Song Li, Paul Laforge, Qingsha Cheng
Presenter:
Xiaolin Fan, Univ. of Regina, Canada
(16:20 - 16:40 )
Abstract
The implicit space mapping technique is implemented as the optimization algorithm for the reflected group delay method in designing a 6-pole microstrip hairpin filter. A technique is proposed to reduce simulation points by matching a few selected group delay points. A computer-aided EM based design approach is proposed for the integration of the implicit space mapping technique and the reflected group delay method. The design steps are summarized and the filter is designed in Sonnet. By using the proposed method, the computation time and space mapping iterations are significantly reduced.
TU4B-4 :
Dual-Passband Filters and Extended-Stopband Wide-Band Bandpass Filters Based on Generalized Stub-Loaded Planar Circuits
Authors:
Roberto Gomez-Garcia, Raul Loeches-Sanchez, Dimitra Psychogiou, Jose-Maria Munoz-Ferreras, Dimitrios Peroulis
Presenter:
Roberto Gomez-Garcia, Univ. of Alcala, Spain
(16:40 - 17:00 )
Abstract
This paper addresses the application of stub-loaded planar circuits to the realization of dual-band bandpass filters and extended-upper-stopband broad-band bandpass filters with quasi-elliptic transfer function. To this aim, different classes of homogeneous- and stepped-impedance parallel-type open-ended stubs are exploited. Analytical design formulas for the transmission zeros (TZs) generated by these stubs are provided. Furthermore, for experimental-validation purposes, two multi-pole microstrip prototypes are manufactured and characterized.
TU4C:
Innovative Techniques for Microwave Control Functions
Chair:
Zaher Bardai
Chair organization:
Retired: Owner, IMN Epiphany
Co-chair:
Jiang Zhu
Co-chair organization:
Google, Inc.
Location:
313B
Abstract:
This session describes new ways to accomplish established microwave functions, e.g., implement a circulator without a magnet, devise frequency-selective surfaces for high-power handling, achieve superior interference cancellation by combining a diplexer with transmit feed-forward, and utilize harmonic power for useful purposes.
Presentations in this
session
TU4C-1 :
Dual Polarized Active Frequency Selective Surface for High Power Applications at X-Band
Authors:
Ryan Gough, Austin Bowman, James Stamm
Presenter:
Ryan Gough, North Star Scientific Corporation, United States
(15:40 - 16:00 )
Abstract
A novel active frequency selective surface (AFSS) with switchable transmissive/reflective properties at X-band frequencies is introduced. This surface achieves a unique combination of maintaining a high dynamic range between active states, demonstrating an insensitivity to incoming orthogonal linear polarizations, and operating across a 10% bandwidth at X-band frequencies. The DC biasing structure maintains element symmetry while mitigating inter-element coupling, allowing adjacent FSS cells to be connected in series without distorting their resonance or limiting the polarization response. The AFSS has a measured reflective-state isolation of greater than 17 dB and transmissive-state loss of less than 1 dB across an operating band of 9 to 10 GHz. We believe this combination of performance and versatility at X-band to be unique in the literature, and is implemented here in such a way as to make this AFSS suitable for future high power applications.
TU4C-2 :
A Tunable 0.86–1.03 GHz FDD Wireless Communication System With an Evanescent-Mode Diplexer and a Self-Interference-Cancelling Receiver
Authors:
Mohammad Abu Khater, Jin Zhou, Yu-Chen Wu, Harish Krishnaswamy, Dimitrios Peroulis
Presenter:
Mohammad Abu Khater, Purdue Univ., United States
(16:00 - 16:20 )
Abstract
A tunable multiband FDD system is presented in this paper. For the first time, a tunable evanescent-mode cavity diplexer and a 65 nm CMOS self-interference-cancelling receiver are combined to provide high Tx-to-Rx isolation required in a multiband FDD system. This combination helps reduce the design constraints on each system independently. The system has a measured tuning range of 0.86-1.03 GHz with 45 dB Tx-to-Rx isolation bandwidths of 4 MHz, at low band, and 2 MHz at high band. Simultaneous transmission and reception using 16-QAM signals are also demonstrated, showing the feasibility of using the presented system in a realistic tunable FDD system.
TU4C-3 :
Waveguide Multimode Directional Coupler for Harvesting Harmonic Power From the Output of Traveling-Wave Tube Amplifiers
Authors:
Rainee Simons, Edwin Wintucky
Presenter:
Rainee Simons, NASA, United States
(16:20 - 16:40 )
Abstract
This paper presents the design, fabrication, and test results for a novel waveguide multimode directional coupler (MDC). The coupler fabricated from dissimilar frequency band waveguides, is capable of isolating power at the 2nd harmonic frequency from the fundamental power at the output port of traveling-wave tube amplifiers. The advantage of the MDC is that it very compact and can be connected directly to the RF output port of a TWTA with negligible loss of fundamental power and therefore highly efficient. Test results from proof-of-concept demonstrations are presented for Ku/Ka-band and Ka/E-band MDCs, which demonstrate sufficient power in the 2nd harmonic for a space borne beacon source for mm-wave atmospheric propagation studies.
TU4C-4 :
Differential Magnetless Circulator Using Modulated Bandstop Filters
Authors:
Ahmed Kord, Dimitrios Sounas, Andrea Alu
Presenter:
Ahmed Kord, Univ. of Texas at Austin, United States
(16:40 - 17:00 )
Abstract
In this paper, we present a differential magnetless circulator by combining two angular-momentum-biased singleended circulators, each of which consists of three first-order bandstop LC filters, connected in a delta topology and modulated in time with a phase difference of 120 deg between each other. Compared to a single-ended architecture, the differential one reduces insertion loss, extends the bandwidth and reduces the required modulation frequency, thus simplifying its practical implementation. We present the design of such a circulator at 830 MHz and provide simulated and measured results for a PCB prototype.
TU4D:
Advances in Microwave Systems for Deep Space Missions
Chair:
Christopher DeBoy
Chair organization:
Johns Hopkins Univ.
Co-chair:
Dipak Srinivasan
Co-chair organization:
Johns Hopkins Univ.
Location:
313C
Abstract:
Current and planned deep-space missions depend on advanced components and techniques in microwave/RF design to meet
demanding science and telecommunications requirements. This special session focuses on advances in microwave systems and
technologies in recent popular missions, including the New Horizons Mission to Pluto, on new work in antenna arraying for both
downlink and uplink signals, and on the flight and ground microwave and RF technologies that future missions to Europa, to Mars,
and beyond are depending on to achieve their goals.
Presentations in this
session
TU4D-1 :
Benchmarking the Future of RF in Space Missions: From Low Earth Orbit to Deep Space
Authors:
Pantelis-Daniel Arapoglou, Massimo Bertinelli, Paolo Concari, Marco Lanucara, Alberto Ginesi
Presenter:
Pantelis-Daniel Arapoglou, ESA, The Netherlands
(15:40 - 16:00 )
Abstract
(submitted for the "Advances in Microwave Systems for Deep-Space Missions" focus/special session)
This paper reports on an internal study carried out at the European Space Agency (ESA) for assessing the reference performance of Payload Data Transmitters achieved in the mid-term. This assessment is meant to provide input to the ESA roadmaps for the 2023 time frame. The assessment is carried out for various space missions, from low Earth to deep space orbits.
Taking advantage of technology evolution combined with innovative architectures and advanced digital signal processing, the paper shows how the data return in several space missions can be dramatically increased by reasonably extrapolating existing RF technology.
TU4D-2 :
Recent RF/Microwave Achievements in Flight on Deep-Space Missions
Authors:
Christopher DeBoy
Presenter:
Christopher DeBoy, Johns Hopkins Univ., United States
(16:00 - 16:20 )
Abstract
(Submitted for "Advances in Microwave Systems for Deep-Space Missions" Focus Session)
Deep-space missions present unique demands on spacecraft components. These include typically stringent size, weight, and power specifications, and designs must also often adhere to strict requirements for radiation, long mission life, and reliability. For flight RF/microwave systems, this translates in particular to design constraints on antennas, radios, and power amplifiers and how these systems are operated. This paper re- views recent accomplishments in RF/microwave system design on United States deep-space missions, and looks ahead to systems in development for upcoming missions.
TU4D-3 :
Telecommunications Systems for the NASA Europa Missions
Authors:
Dipak Srinivasan, Colin Sheldon, Matthew Bray
Presenter:
Colin Sheldon, Johns Hopkins Univ., United States
(16:20 - 16:40 )
Abstract
(Submitted for the "Advances in Microwaves Systems for Deep-Space Missions" focus/special session)
The telecommunications systems for two NASA deep-space missions to Europa are presented. One mission, Europa Clipper, is a Jovian orbiter with multiple Europa flybys. The Europa Lander mission includes a carrier spacecraft and landed element. Both missions are designed to communicate to Earth via the NASA Deep Space Network and other ground stations. For lander communications, both the carrier spacecraft and Europa Clipper spacecraft are equipped with store-and-forward relay communication capability. The heart of each spacecraft’s telecommunications system is the high-TRL JHU/APL Frontier Radio, based on the Solar Probe Plus design. Other key hardware developments across the different spacecraft include a 3-m dual-band (X/Ka) high gain antenna (HGA), a GaN-based solid state power amplifier and a slot-array HGA to enable the lander communication system. All components must operate in a high-radiation environment and meet planetary protection requirements.
TU4D-4 :
Advances in Deep Space Radios
Authors:
Michael O'Neill, Christopher Haskins, Brian Bubnash
Presenter:
Michael O'Neill, Johns Hopkins Univ., United States
(16:40 - 17:00 )
Abstract
In meeting the needs of a number of different missions, [redacted] has produced a family of high-reliability, extremely low size, weight, and power (SWaP) software-defined radio (SDR) products for near and deep space applications called Frontier Radio (FR). With flight heritage on multiple successful missions, the latest flight version includes a Ka-band downlink. Frontier Radio has also branched to include Frontier Radio Lite (FR Lite), a single-board radio with significant SWaP savings, and the Frontier Radio Virtual Radio (VR) with the capability to replace the processing functionality of an entire spacecraft bus for smallsat, microsat, and cubesat applications. All FR products are designed for agile adaptability through the use of modular architecture in hardware, firmware, and software to meet the varying needs across many missions.
TU4E:
Novel Radiating and Waveguiding Structures and Phenomena
Chair:
David Jackson
Chair organization:
Univ. of Houston
Co-chair:
Tapan Sarkar
Co-chair organization:
Syracuse Univ.
Location:
314
Abstract:
This session introduces new radiating and waveguiding structures and phenomena, and the analysis and explanation of these interesting new effects. These new structures and phenomena include: the enhancement of antenna gain using a new type of planar surface; the propagation of waves on a half space and the distinction between the interesting waves known as the “Zenneck wave” and the “surface plasmon polariton”; an improved analysis of leaky-wave antennas that are based on slots; and the beamforming that can be achieved by using a simple 2D passive periodic array of printed dipoles acting as a 2D leaky-wave antenna.
Presentations in this
session
TU4E-1 :
Artificial Gradient-Index Lens Based on Single Unit Cell Layer Fishnet Metamaterial for Phase Correction of a Horn Antenna
Authors:
Matthias Maasch, Bruno Evaristo, Mario Mueh, Christian Damm
Presenter:
Matthias Maasch, Technische Univ. Darmstadt, Germany
(15:40 - 16:00 )
Abstract
An artificial gradient-index lens for phase correction of a horn antenna in the Ka-band is presented. By introducing a gradient of the geometric features in the single layer fishnet unit cell, a phase variation between -180 and +180 degress can be obtained. The relation between the geometric dimensions, phase- and amplitude distribution is presented. Furthermore, phase-correction and resulting improved radiation pattern is demonstrated at 27.5 GHz and evaluated by nearfield measurements making the presented single layer fishnet a good candidate for artificial lenses with low weight and low fabrication costs.
TU4E-2 :
An Exposé of Zenneck Waves and Surface Plasmon Polaritons
Authors:
Mohammad Abdallah, Dojana Salama, Tapan Sarkar, Magdalena Salazar-Palma
Presenter:
Tapan Sarkar, Syracuse Univ., United States
(16:00 - 16:20 )
Abstract
In this paper, the distinction between Zenneck waves and surface plasmon polaritons is illustrated. The surface plasmon needs to be excited by an electron beam which can be effectively generated by a source of electrons or a quasiparticle like an evanescent wave which tunnels through the medium and thus excites the electrons. The surface plasmon propagates at the interface between a metal and a dielectric at petahertz frequencies when the conditions are right. For the Zenneck wave, the evanescent transverse field components do not change appreciably with frequency as the Brewster phenomenon is independent of frequency, whereas for a surface plasmon, with an increase of the frequency, the wave is more closely coupled to the surface. The Zenneck waves are produced at the zero of the reflection coefficient of an incident TM wave on an air-dielectric interface whereas the surface plasmons are produced when the reflection coefficient is infinite.
TU4E-3 :
Discrete Dipole Approximation for Simulation of Unusually Tapered Leaky Wave Antennas
Authors:
Laura Pulido Mancera, Mohammadreza Imani, David Smith
Presenter:
Laura Pulido Mancera, Duke Univ., United States
(16:20 - 16:40 )
Abstract
Discrete Dipole Approximation (DDA) is presented as a simulation tool for predicting the radiation properties of uniform and tapered Leaky Wave Antennas. A comparison between this method and full wave simulation demonstrates the accuracy of the presented technique. This technique is especially attractive since it allows us to simulate and design LWAs with unusual tapering to achieve desired beamwidth and sidelobe level while maintaining steering capabilities.
TU4E-4 :
Propagation Characteristics of Leaky Waves on a 2D Periodic Leaky-Wave Antenna
Authors:
Sohini Sengupta, David Jackson, Stuart Long
Presenter:
Sohini Sengupta, Univ. of Houston, United States
(16:40 - 17:00 )
Abstract
A 2D periodic leaky-wave antenna consisting of a periodic distribution of rectangular patches on a grounded dielectric substrate, excited by a narrow slot in the ground plane, is studied here. The TM0 surface wave that is normally supported by a grounded dielectric substrate is perturbed by the presence of the periodic patches to produce radially-propagating leaky waves. In addition to making a novel microwave antenna structure, this design is motivated by the phenomena of directive beaming and enhanced transmission observed in plasmonic structures in the optical regime.
TU4F:
Power Dividers
Chair:
Guoan Wang
Chair organization:
Univ. of South Carolina
Co-chair:
Bayaner Arigong
Co-chair organization:
Infineon Technologies Americas
Location:
315
Abstract:
This session presents design and performance analysis of power dividers and combiners. Techniques of designing ultra-wideband power dividers with embedded CPW resonators and suspended strip-line are discussed. In addition, a slotted microstrip cross-junction is also adopted in the implementation of a novel Wilkinson Power Divider, and a new 6-way ring power divider/combiner is presented.
Presentations in this
session
TU4F-1 :
Ultra-Wideband (UWB) Wilkinson Power Divider With Ultra-Narrow Dual-Notched Bands Using Embedded CPW Resonators
Authors:
Jie Zhou, Huizhen Qian, Darong Huang, Xun Luo
Presenter:
Xun Luo, Univ. of Electronic Science and Technology of China, China
(15:40 - 16:00 )
Abstract
In this paper, an ultra-wideband (UWB) Wilkinson power divider with ultra-narrow dual-notched bands is proposed. The multi-mode UWB characteristic is achieved using stepped-impedance open-circuited stub (SIOS) and broadside-coupled microstrip/CPW (BCMC) transition. Then, to cancel the interferences from existed wireless local-area network (WLAN) signals (i.e., 5.2 and 5.8 GHz), two pairs of embedded CPW resonators are employed. To verify the mechanisms mentioned above, a UWB power divider with dual-notched bands is implemented and fabricated. The measurement exhibits dual-notched bands with center frequencies of 5.28 and 5.86 GHz, which has merits of 10-dB notched FBW of 1.5% and 0.68%, respectively.
TU4F-2 :
A 6-Way Ring Combiner/Divider
Authors:
Kyle Holzer, Jeffrey Walling
Presenter:
Kyle Holzer, Univ. of Utah, United States
(16:00 - 16:20 )
Abstract
A 6-way planar ring for combining/dividing signals is presented. Conventional planar power combining/dividing structures use derivatives of the Wilkinson combiner in a ladder structure, or radial combiners. The ring combiner is smaller, provide higher port isolation, improved harmonic suppression and a single isolation port (e.g., delta output port), allowing energy harvesting in outphasing applications. The pre-sented ring combiner achieves a measured insertion loss of < 1dB from 5.5-5.8 GHz, while achieving > 25 dB isolation. The isolation notch is tunable by adjusting a static phase offset be-tween the inputs. When linearly combining six, 26 dBm amplifi-ers, measurement results show 31dBm output. A 5-MHz, 64QAM LTE uplink signal is amplified without DPD and achieves an average output power of 25 dBm with an ACLR of >35 dBc. The power handling capability of the ring is only lim-ited by the trace width and dielectric material, hence higher powers are achieveable.
TU4F-3 :
A Novel Wilkinson Power Divider Based on Slotted Microstrip Cross-Junction
Authors:
Abdelhamid Nasr, Amr Safwat
Presenter:
Amr Safwat, Ain Shams Univ., Egypt
(16:20 - 16:40 )
Abstract
A novel microstrip Wilkinson power divider with separate paths for the even and odd modes is presented in this paper. The proposed divider has a single quarter wavelength impedance transformer section and a reduced dimension in the transverse direction. This is achieved by etching a longitudinal slot in the ground plane of the microstrip where the isolation resistor is added. To develop a design procedure for the proposed divider, an equivalent circuit model for the slotted microstrip cross junction is also proposed. The model is validated by implementing a two-way band-pass filter. The proposed divider has a typical Wilkinson power divider performance of 0.2 dB insertion loss within 72% fractional bandwidth (15 dB return loss) and -24 dB isolation at the operating frequency. Meanwhile, it has the advantage of short lateral dimensions compared to its counterparts.Theoretical predictions have been verified by EM simulations and measurements.
TU4F-4 :
Ultra-Wideband Multi-Section Power Divider on Suspended Stripline
Authors:
In Bok Kim, Ki Hyuk Kwon, Seung Bok Kwon, Wahab Mohyuddin, Hyun Chul Choi, Kang Wook Kim
Presenter:
In Bok Kim, LIG Nex1 Co. Ltd, Republic of Korea
(16:40 - 17:00 )
Abstract
In this paper, a design method of an ultra-wideband multi-section power divider on suspended stripline(SSL) is presented. A clear design guideline for ultra-wideband power dividers is provided. As a design example, a 10-section SSL power divider is implemented. The fabricated divider exhibits the minimum insertion loss of 0.3 dB and the maximum insertion loss of 1.5 dB from 1 to 19 GHz. The measured VSWR is typically 1.40:1, and the isolation between output-port is typically 20 dB.
TU4G:
Advances in Photonic Signal Generation and Wireless Communication
Chair:
Jeffrey Nanzer
Chair organization:
Michigan State Univ.
Co-chair:
Mona Jarrahi
Co-chair organization:
Univ. of California, Los Angeles
Location:
316A
Abstract:
This session focuses on recent advances in the state of the art of photonically assisted signal generation techniques, spanning microwave to THz frequencies. Recent breakthroughs in Wireless communications links utilizing photonic signal generation are also featured.
Presentations in this
session
TU4G-1 :
Silicon Photonics Enabled Hyper-Wideband Wireless Communication Link
Authors:
Michael Eggleston, Chia-Ming Chang, Noriaki Kaneda, Kwangwoong Kim, Jeffrey Sinsky, Guilhem de Valicourt, Po Dong, Nicolas Chimot, Francois Lelarge, Tatsuo Itoh, Ming Wu, Young-Kai Chen
Presenter:
Michael Eggleston, Nokia Bell Labs, United States
(15:40 - 16:00 )
Abstract
We demonstrate the first silicon photonics enabled hyper-wideband wireless link with an instantaneous bandwidth of 12 GHz, which is 85% of the center frequency of 14 GHz. The silicon photonics based RF receiver consists of a four-channel optical phase encoder, an integrated hybrid-silicon mode-locked laser, and two silicon ring notch filters. The received CDMA RF wireless signal is correlated to baseband using coherent optical heterodyne at a data rate of 3 Gbps error-free with electronics bandwidth of only 3 GHz. Hyper-wideband RF transmission allows for data obfuscation and increased jamming resistance from narrowband interferers. The narrowband silicon photonic ring filters allow for further interference rejection of greater than 27 dB tunable over the full 20 GHz of RF spectrum.
TU4G-2 :
Significant Efficiency Enhancement in Photoconductive Terahertz Emitters through Three-Dimensional Light Confinement
Authors:
Nezih Yardimci, Semih Cakmakyapan, Soroosh Hemmati, Mona Jarrahi
Presenter:
Nezih Yardimci, Univ. of California, Los Angeles, United States
(16:00 - 16:20 )
Abstract
We present a novel photoconductive terahertz emitter, which offers significantly high terahertz radiation power levels through three-dimensional light confinement near terahertz radiating elements. Arrays of plasmonic nano-antennas fabricated on a photo-absorbing semiconductor substrate are used as the terahertz radiating elements. The plasmonic nano-antenna arrays are designed to offer high radiation resistance over a broad terahertz frequency range. An optical reflector layer is embedded inside the substrate to spatially confine and absorb a major portion of an incident optical pump beam near the plasmonic nano-antennas. Therefore, very efficient ultrafast photocurrent can be generated and coupled to the plasmonic nano-antennas for high-efficiency terahertz radiation generation. We experimentally demonstrate record-high terahertz radiation powers as high as 11.4 mW over 0.1-5 THz frequency range with 2.3% optical-to-terahertz conversion efficiency.
TU4G-3 :
A DC–90 GHz 4-Vpp Differential Linear Driver in a 0.13 µm SiGe:C BiCMOS Technology for Optical Modulators
Authors:
Pedro Rito, Iria Garcia Lopez, Ahmed Awny, Ahmet Cagri Ulusoy, Dietmar Kissinger
Presenter:
Pedro Rito, IHP Microelectronics, Germany
(16:20 - 16:40 )
Abstract
In this paper, a linear driver for optical modulators in a 0.13 μm SiGe:C BiCMOS technology with fT/fmax of 300/500 GHz is presented. The driver is implemented following a distributed amplifier topology in a differential manner. In a 50‑Ω environment, the circuit delivers a maximum differential output amplitude of 4 Vpp, featuring a small-signal gain of 13 dB and 3‑dB bandwidth of 90 GHz. Time-domain measurements using OOK (up to 56 Gb/s) and PAM‑4 (at 30 Gbaud) are performed, demonstrating the maximum output swing and linearity of the driver. The output power to power dissipation ratio is 3.6%. To the best knowledge of the authors, this is the first time a linear driver for optical modulators demonstrates such bandwidth.
TU4G-4 :
Ring Resonator Based Integrated Optical Beam Forming Network With True Time Delay for mmW Communications
Authors:
Yuan Liu, Adam Wichman, Brandon Isaac, Jean Kalkavage, Eric Adles, Thomas Clark, Jonathan Klamkin
Presenter:
Yuan Liu, Univ. of California, Santa Barbara, United States
(16:40 - 17:00 )
Abstract
An optical ring resonator (ORR) based integrated optical beamforming network (OBFN) for a W-band millimeter
wave phased array antenna is reported. The delay response of a 3-ORR delay line is optimized and dynamic tuning ranges of 208.7 ps and 172.4 ps for the true time delay bandwidths of 6.3 GHz and 8.7 GHz are achieved. Moreover, all of the delay paths are successfully tuned with 4.2 ps delay difference from the neighboring paths. Eye diagrams of a 3 Gbps NRZ OOK modulated signal are measured to show that no noticeable signal deterioration is induced by the OBFN chip.
TU4H:
Control of High Power Microwave Processes
Chair:
Steven Stitzer
Chair organization:
Northrop Grumman Mission Systems
Co-chair:
Cheng Wen
Co-chair organization:
Peking Univ.
Location:
316B
Abstract:
The session discusses techniques of controlling microwave power generation, including injection locking of magnetrons and solid-state sources. Presentations also cover advanced power combining and mitigation of thermal runaway.
Presentations in this
session
TU4H-1 :
2.4 GHz-Band High Power and High Efficiency Solid-State Injection-Locked Oscillator Using Imbalanced Coupling Resonator in Feedback Circuit
Authors:
Hikaru Ikeda, Yasushi Itoh
Presenter:
Hikaru Ikeda, Panasonic Corp., Japan
(15:40 - 16:00 )
Abstract
A 2.4GHz-band high power and high efficiency in-jection-locked oscillator has been
developed for use in the mi-crowave ovens having uniform heating as well as subtle tempera-
ture control. With the use of the imbalanced coupling resonator in the feedback circuit, an
output power of 210W and an efficien-cy of 51% have been successfully obtained at 2.45GHz,
where a reference signal of less than 1/10,000 has been injected. The high power and high
efficiency solid-state injection-locked oscillators presented in this paper has an advantage
in long life, frequency and phase controllability, and low voltage operation, which can be
useful for realizing an accurate temperature control in chemi-cal reactions as well as the
spot and uniform heating of micro-wave ovens.
TU4H-2 :
Experimental Studies on a Low Power Injection-Locked Continuous Wave Magnetron
Authors:
Zhenlong Liu, Xiaojie Chen, Menglin Yang, Changjun Liu
Presenter:
Zhenlong Liu, Sichuan Univ., China
(16:00 - 16:20 )
Abstract
An injection-locked magnetron was investigated at low power injection. The 1 kW magnetron has been locked over the ratio of the input power to output power of -57 dB. It is much less than the required injection power in previous experiments. The purity of spectrum was presented. The phase noise of the locked magnetron was less than -93.1 dBc/Hz at 10 kHz offset. The oscillation spectrum has FM noise due to the spurious of input reference signal and injection locking contributes to reducing the FM noise itself to some extent. The injection locking technique may be applied to power combining or large-power amplifiers based on magnetrons.
TU4H-3 :
Design of an Airline Coax Radial Power Combiner With Enhanced Isolation
Authors:
Spencer Erekson, W. Joel Johnson, Dimitrios Peroulis
Presenter:
Spencer Erekson, Harris Corporation, United States
(16:20 - 16:40 )
Abstract
An X-band radial power combiner based on an airline coax with 0.15 dB measured insertion loss, 8 dB minimum port-to-port isolation, 33% bandwidth, and the ability to handle kilowatt power levels is presented in this work. The design can readily be scaled to arbitrary frequencies or any number of ports. The methods used to select the parameters and optimize the design are presented. The models are validated by a 9-port X-band proof-of-concept combiner.
TU4H-4 :
Permittivity-Based Control of Thermal Runaway in a Triple-Layer Laminate
Authors:
Joseph Gaone, Burt Tilley, Vadim Yakovlev
Presenter:
Joseph Gaone, Worcester Polytechnic Institute, United States
(16:40 - 16:50 )
Abstract
The use of heat exchangers to harness microwave energy has great potential in transmitting and collecting beamed energy through space. We consider a simple three-layer laminate model in which a middle layer characterized by a temperature-dependent loss factor is surrounded by two lossless dielectric layers. It is shown that when plane waves, symmetrically impinging the laminate at normal incidence is applied, conditions analogous to Bragg interference occur for a fixed loss factor in the middle layer. For the loss factor depending on temperature,we find a new stable steady-state solution corresponding to resonance conditions, whose equilibrium temperature is significantly elevated but prevents the onset of thermal runaway. The impact of this result on transferring harnessed microwave energy to other media is discussed.
15:40 - 17:10
TUIF3:
Interactive Forum - Three
Chair:
Gui Chao Huang
Chair organization:
Univ. of Hawaii
Co-chair:
Ruthsenne Perron
Co-chair organization:
Univ. of Hawaii
Location:
Overlook Concourse
Presentations in this
session
TUIF3-1 :
On-Wafer Time-Domain Measurement of Pulse-to-Pulse Stability for Microwave Power GaN HEMT
Authors:
Seifeddine Fakhfakh, Lotfi Ayari, Audrey Martin, Michel Campovecchio, Denis Barataud, Guillaume Neveux
Presenter:
Seifeddine Fakhfakh, Xlim - CNRS- Unversite De Liroges, France
Abstract
For the first time, on-wafer time-domain envelope measurements of pulse-to-pulse (P2P) stability are reported in this paper. In the case of a radar burst, these on-wafer measurements are performed on a 10W power GaN HEMT in S-Band by using a digital quadrature demodulation (DQD) as envelope extraction technique. The impact of an irregular RF pulse train on the measured P2P stability at device level is illustrated by the influence of load impedance, input power and bias conditions.
TUIF3-2 :
A 3–10 GHz Contact-Less Complex Dielectric Spectroscopy System
Authors:
Reza Ebrahimi Ghiri, Ali Pourghorban Saghati, Elif Kaya, Kamran Entesari
Presenter:
Ali Pourghorban Saghati, Texas A&M; Univ., United States
Abstract
In this paper, a contact-less broadband dielectric spectroscopy (BDS) system with a combined frequency domain (FD)/ time domain (TD) technique for 3–10 GHz frequency range is presented. The material-under-test (MUT) is placed in the middle of two radiative near-field-coupled ultra wide band (UWB) Vivaldi antennas which act as the sensing elements. To enhance the detection accuracy, a new base-band signal is generated by combining multiple up converted Gaussian signals. A calibration method, which is based on subtracting the output of system from a reference material (air), is also utilized, in order to solely detect the magnitude and phase variations caused by the MUT, and eliminate the effects of the transmitter, the sensing unit, and the receiver. The proposed system is tested for xylene, ethanol, and methanol, and the measurement results are verified comparing with the direct measurements of vector network analyzer (VNA).
TUIF3-3 :
A New Nonlinear Behavioral Modeling Technique for RF Power Transistors Based on Bayesian Inference
Authors:
Jialin Cai, Justin King, Jose Pedro
Presenter:
Jialin Cai, Hangzhou Dianzi University, China
Abstract
A novel nonlinear behavioral modeling technique, for transistor behavioral modeling, is presented in this paper. Compared with existing modeling techniques, the new approach is based on a fundamentally different theory, Bayesian inference (one of the core methods of machine learning). The new technique not only good at handling multidimensional modeling problem, it could also greatly alleviated the notorious overfitting issue through corresponded model extraction method. Both simulation and experimental test examples for a 10W Cree GaN transistor are provided. The new model provides accurate prediction throughout the Smith chart at different input power levels.
TUIF3-4 :
A 2.6 GHz RF Power Amplifier With 25.6 dBm Linear Power and -47 dBc ACLR for Small-Cell Applications
Authors:
Wei-Tsung Li, Chih-Chun Shen, Shih-Ming Wang
Presenter:
Wei-Tsung Li, Industrial Technology Research Institute, Taiwan
Abstract
A broadband RFIC power amplifier covering 2.5 to 2.7 GHz band and targeting LTE small-cell applications has been implemented through GaAs HBT technology. To meet high linearity requirements of LTE small-cell applications, the proposed linearization bias circuit has the characteristics of gain and phase compensations for the proposed power amplifier. The power amplifier achieves 1-dB compression point (P1dB) of 32.2 dBm and the power-added efficiency (PAE) at P1dB of 39.7%. When the proposed power amplifier is tested with standard LTE 20 MHz signal, the obtained -47 dBc adjacent channel leakage ratio (ACLR) compliant output power and PAE are 25.6 dBm and 17.2 %, respectively.
TUIF3-5 :
Wideband Low-Cost Hybrid Coupler for mm-Wave Frequencies
Authors:
Martin Hitzler, Johannes Iberle, Winfried Mayer, Helmut Barth, Christian Waldschmidt
Presenter:
Martin Hitzler, Ulm University, Germany
Abstract
In this paper a new realization of a wideband waveguide hybrid coupler is proposed, which can be realized as a low-cost metallized injection-molded component. A key requirement for low costs is a split-block suited design approach. For that reason, the waveguide ports are stacked in the E-plane. The coupling mechanism is explained in a narrowband approach. By expanding the coupling region in the H-plane, the approach is optimized concerning bandwidth. At 160 GHz a measured bandwidth of 23% is achieved with an isolation better than 20 dB and a very low insertion loss.
TUIF3-6 :
0.01 GHz to 110 GHz Distributed Common-Gate Power Detector in Standard CMOS 65 nm Technology
Authors:
Muh-Dey Wei, Renato Negra
Presenter:
Muh-Dey Wei, RWTH Aachen Univ., Germany
Abstract
A broadband distributed common-gate power detector (D-CGPD) is demonstrated in the paper. The D-CGPD consists of finite-ground CPWs and nMOSFETs biased in the resistive regime, which consumes no quiescent current. With the distributed configuration, measured sensitivity of 700.8mV/mW and 68mV/mW is obtained at 0.01GHz and 110GHz, respectively. Measured S11 is below -15dB for entire band. A standalone CGPD, which has the same transconductance with the D-CGPD, is implemented to compare to the D-CGPD. According to experiment, the D-CGPD reaches the highest sensitivity at 110GHz under matching condition. To the best of our knowledge, this is the first D-CGPD reported in CMOS technology.
TUIF3-7 :
W-Band SiGe Attenuators Based on Compact Low-VSWR Topologies
Authors:
Roee Ben Yishay, Danny Elad
Presenter:
Roee Ben Yishay, ON Semiconductor, Israel
Abstract
This paper presents two W-Band variable attenuators with low insertion loss and high attenuation range, designed and fabricat-ed in a 0.12 µm SiGe BiCMOS process. The first attenuator is based on a double shunt reverse saturated HBTs topology with two additional impedance transforming sections introduced to maintain a low return loss over the entire W-band for all attenua-tion states. At 94 GHz, the insertion loss is 2.5 dB, and at the maximum attenuation state loss is 27.8 dB, while S11<-15 dB at 83-110 GHz. Measured input P1dB at 94 GHz is higher than 1 dBm. The second attenuator is based on reflection type topology, obtaining 3.6 dB IL and 22 dB maximum loss. The IC’s consume up to 4 mW and occupy areas of 260×270 µm2 and 400×440 µm2, respectively (excluding pads).
TUIF3-8 :
A Low Minimum Detectable Power, High Dynamic Range, V-Band CMOS Millimeter-Wave Logarithmic Power Detector
Authors:
Chien-Chang Chou, Wen-Chian Lai, Tzuen-Hsi Huang, Huey-Ru Chuang
Presenter:
Chien-Chang Chou, National Cheng Kung Univ., Taiwan
Abstract
This paper presents a V-Band logarithmic power detector fabricated in 90-nm CMOS technology. The topology of successive detection logarithmic amplifier (SDLA) is adopted for high dynamic range. Instead of using traditional differential limiting amplifiers, millimeter-wave (MMW) amplifiers are applied for the gain cells to achieve the desired performance. A three-stage SDLA testkey was implemented. The measured results at 52 GHz show that the dynamic range is 50 dB and the logarithmic error is within ±1.5 dB. From 50 to 62 GHz, the dynamic range is better than 35 dB, and the logarithmic errors are within ±2 dB. The total power consumption and chip size are 20 mW and 0.66 mm2, respectively. Compared to the previously reported millimeter-wave (MMW) power detectors, the proposed work features a wider dynamic range and reasonably linear logarithmic curve response to RF input power.
TUIF3-9 :
Integrated Waveguide Power Combiners With Artificial Dielectrics for mm-Wave Systems
Authors:
Zhebin Hu, Maria Alonso-delPino, Daniele Cavallo, Harshitha Thippur Shivamurthy, Marco Spirito
Presenter:
Zhebin Hu, Delft Univ. of Technology, The Netherlands
Abstract
In this contribution we present a new class of N:1 power combiners based on synthetic waveguides integrated in silicon technologies back-end-of-line. The input feeding is based on (N) E field probes employing capacitive resonance, feeding a waveguide with artificial dielectrics (ADs). The signal summation occurs on a single transverse plane, thus providing insertion losses which do not scale with the number of inputs. This results in a combiner more compact and without restriction in the number of inputs compared to the traditional power of two (2N) combiners. The power combiner operation is presented in a BiCMOS technology implementation and analyzed by means of full wave electromagnetic (EM)simulations.
Finally, the experimental results of an integrated 4:1 back-to back-combiner operating in the 240-310GHz band is presented and compared with the full EM model.
TUIF3-10 :
Micromachined Terahertz Waveguide Band-pass Filters
Authors:
Jiang Hu, Shuang Liu, Yong Zhang, Ruimin Xu
Presenter:
Jiang Hu, Univ. of Electronic Science and Technology of China, China
Abstract
Three waveguide band-pass filters are designed based on three different resonant cavity structures, operating at WR-2.2 (0.33~0.5THz), WR-1.5 (0.5~0.75THz) and WR-1.0 (0.75~1.1THz) frequency band separately. Terahertz filters are all fabricated using the deep reactive ion etching (DRIE) silicon micromachining technique. For more accurate designs, the conductivity of the metal film with the roughness surface is investigated in the terahertz (THz) frequency band, using the HB and the modified Huray model. The measurements are performed using the vector network analyzer (VNA) with corresponding frequency extenders. Because the flanges of the measurement setup have big size, testing fixtures are designed for measurements. Measured insertion losses within pass band are about 1.9dB, 2dB and 3.4dB separately, which are in good agreement with simulations and therefore verifies the accuracy of the analysis above.
TUIF3-11 :
Kilowatt Peak-Power Wideband Active Phased-Array Transmitter
Authors:
Young-Pyo Hong, Tong Ook Kong, Woosang Lee, Jin Soo Choi, No-Weon Kang
Presenter:
Young-Pyo Hong, Korea Research Institute of Standards and Science, Republic of Korea
Abstract
In this paper, an active phased-array transmitter that can be used to generate 1-kW peak pulsed output is presented. It consists of 192-channel transmit modules and each transmit module with greater than 6 W of CW output power is connected to rigid tapered slot antenna in the frequency range 6-18 GHz. In transmit module, integrated multi-function corechip is designed in order to individually control both amplitude and phase of ar-ray antennas. Far-field radiation pattern of active phased-array transmitter was obtained using field-transformation method after carrying out near-field measurement in anechoic chamber. Electronic beam steering capability of active phase-array transmitter was demonstrated with a scan angle of ±20 degree in both azimuth and elevation angle. The overall system size is 840 mm×480 mm×630 mm.
TUIF3-12 :
OAM Antenna Arrays at E-Band
Authors:
Lei Fang, Haohan Yao, Rashaunda Henderson
Presenter:
Lei Fang, Univ. of Texas at Dallas, United States
Abstract
This paper introduces antenna arrays to generate mode 1 and mode 3 orbital angular momentum (OAM) radio beams at 73.5 GHz (E-band) using half wavelength dipoles. Design details are presented with the arrays fabricated on 0.127 mm-thick high performance FR408 substrate with relative permittivity of 3.75 and loss tangent of 0.018. ANSYS HFSS simulations have been used to optimize the array designs and feeding networks. Meas-ured results include |S11| (dB) across E-band and far-field radia-tion patterns at 73.5 GHz. The simulations and measurements are in good agreement and demonstrate how uniform circular arrays for E-band communications can be implemented in a simple manufacturing process with flexible substrates.
TUIF3-13 :
A Power-Detecting, Null-Scanning, Retrodirective Array for a CubeSat Platform
Authors:
Reece Iwami, Tyler Chun, Wade Tonaki, Wayne Shiroma
Presenter:
Reece Iwami, Univ. of Hawaii, United States
Abstract
A power-detecting, null-scanning, retrodirective antenna array for CubeSat platforms is presented. The system utilizes several hardware and software enhancements over previous retrodirective array architectures to address the size, weight, and power limitations of the CubeSat structure. Full-duplex retrodirectivity is reported at 9.59 and 9.67 GHz for transmit and receive, respectively.
TUIF3-14 :
Direction of Arrival Estimation Performance for Compact Antenna Arrays With Adjustable Size
Authors:
Stefano Caizzone, Wahid Elmarissi, Marco A. M. Marinho, Felix Antreich
Presenter:
Stefano Caizzone, German Aerospace Center, Germany
Abstract
The quest for compact antenna arrays able to
perform robust beamforming and high resolution direction of
arrival (DOA) estimation is pushing the antenna array dimensions
to progressively shrink, with effects in terms of reduced
preformance not only for the antenna but also for beamforming
and DOA estimation algorithms, for which their assumptions
about the antenna properties do not hold anymore. This work
shows the design and development of an antenna array with
adjustable mutual distance between the single elements: such
setup will allow to scientifically analyse the effects that progressive
miniaturization, i.e. progressively smaller mutual distances
between the antennas, have on the DOA estimation algorithms,
as well as show the improvements obtained by using array
interpolation methods, i.e. techniques able to create a virtual
array response out of the actual array one, such as to comply
with the algorithms’ requirements on the antenna response.
TUIF3-15 :
2ⅹ2 MIMO In-Band Full-Duplex Radio Front-End for Self-Interference Cancellation in 90-MHz Bandwidth
Authors:
Donghyun Lee, Byung-Wook Min
Presenter:
Donghyun Lee, Yonsei Univ., Republic of Korea
Abstract
Abstract — This paper presents experimental results of self-interference cancellation of a 2ⅹ2 MIMO in-band full-duplex radio front-end. The proposed RF front-end consists of two rat race coupler and four antennas network, where passive suppression is done, and four self-interference reference generator, where active cancellation is done by making identical signal with residual self-interference signal, then subtracting it from received signal. As every antenna, followed by two rat race couplers, is used for transmitting and receiving simultaneously, MIMO antenna network can be constructed maintaining its own passive suppression. Also, a new type of true time delay circuit, having high dynamic range of variable time and wideband performance, is used to be fit to arbitrary residual self-interference, after the passive suppression, and achieve wideband self-interference cancellation. Experimental results show 50-dB self-interference cancellation over 90-MHz, centered at 2.53 GHz.
TUIF3-16 :
Low-Latency MISO FBMC-OQAM: It Works for Millimeter Waves!
Authors:
Ronald Nissel, Erich Zoechmann, Martin Lerch, Sebastian Caban, Markus Rupp
Presenter:
Martin Lerch, TU Wien, Austria
Abstract
A key enabler for high data rates in future wireless systems will be the usage of millimeter waves. Furthermore, Filter Bank Multi-Carrier (FBMC) with its good spectral properties has also been considered as a possible future transmission technique. However, many authors claim that multiple antennas and low-latency transmissions, two of the key requirements in 5G, cannot be efficiently employed in FBMC. This is not true in general, as we will show in this paper. We investigate FBMC transmissions over real world channels at 60 GHz and show that Alamouti’s space time block code works perfectly fine once we spread (code) symbols in time. Although it is true that spreading increases the transmission time, the overall transmission time is still very low because millimeter waves employ a high subcarrier spacing. Therefore, coded FBMC in combination with millimeter waves enables high spectral efficiency, low-latency and allows the straightforward usage of multiple antennas.
TUIF3-17 :
Towards Circulator-Free Multi Antenna Transmitters for 5G
Authors:
André Prata, Sérgio Pires, Mustafa Acar, Arnaldo Oliveira, Nuno Carvalho
Presenter:
André Prata, Instituto De Telecomunicacoes, Portugal
Abstract
Multi-antenna transmitters based on Massive MIMO and beam-forming will be one of the 5G enabler technologies. In order to have suitable commercial architectures for these transmitters, they must be scalable, cost-effective, energy efficient and present a high-level of integration. This paper presents a technique where the circulator (bulky and expensive) is no longer required in the architecture. This paper also addresses the mutual coupling be-tween antennas as one of the main problems associated with the circulator removal and identifies the PA load impedance varia-tion, efficiency degradation, distortion generation and EVM deg-radation as severe consequences. To solve these problems, a digi-tal compensation technique is proposed and verified with meas-urements in a laboratorial setup using 6W ultra-compact 2-stages MMIC PAs. The obtained results show that it is possible to re-move the circulator and keep almost similar performance as in the single antenna operation mode.
TUIF3-18 :
Orthogonal Time Frequency Space (OTFS) Modulation for Millimeter-Wave Communications Systems
Authors:
Ronny Hadani, Shlomo Rakib, Andreas Molisch, Christian Ibars, Anton Monk, Michail Tsatsanis, Jim Delfeld, Andrea Goldsmith, Robert Calderbank
Presenter:
Andreas Molisch, Univ. of Southern California, United States
Abstract
Due to the increased demand for data rate, flexibility, and reliability of 5G cellular systems, new modulation formats need to be considered. A recently proposed scheme, Orthogonal Time Frequency Space (OTFS), offers various advantages in particular in environments with high frequency dispersion. Such environments are encountered, e.g, in mm-wave systems, both due to the higher phase noise, and the larger Doppler spreads encountered there. The current paper provides a performance evaluation of OTFS at 5G mm-wave frequencies. Comparisons with OFDM modulation show that OTFS has lower BER than OFDM in a number of situations.
TUIF3-19 :
Wide Band, High Power, Same-Channel Full Duplex Transceiver System Demonstration
Authors:
Luciano Boglione, Clayton Davis, Joel Goodman, Matthew McKeon, David Parrett, Sanghoon Shin, Naomi Walker
Presenter:
Luciano Boglione, Naval Research Laboratory, United States
Abstract
Full duplex communication systems promise to double the available spectrum by enabling simultaneous transmit and receive capabilities. Receiver linearity and its effective isolation from the transmitter must be extremely large to allow detection of any desired signals in the presence of self-interference within the receiver bandwidth. Echoes from the environment may introduce additional distortion that further hinder detection. These challenges are multiplied if full duplex capability is to be achieved over wide bandwidths. This paper describes and demonstrates the performance of a novel wide band transceiver architecture for full duplex applications. The full duplex performance is agnostic to the transmitter hardware in use. Measurements demonstrate simultaneous detection of a complex communication signal and a chirp signal completely uncorrelated with the transmitted signal which delivers 45 dBm to the antenna at the same time in the same bandwidth. To the authors’ knowledge, the novel transceiver architecture demonstrate state-of-the-art full duplex operation.
Wednesday 7 June
8:00 - 9:40
WE1A:
Advances in Numerical Techniques for Microwave Engineering
Chair:
Dan Jiao
Chair organization:
Purdue Univ.
Co-chair:
James Skala
Co-chair organization:
Georgia Institute of Technology
Location:
312
Abstract:
Modeling complex real world problems requires significant advances in the state of the art of numerical techniques for Maxwell's equations. This session presents such advances that enable highly accurate modeling of fine features in microwave circuits, parametric modeling and sensitivity analysis, inductance extraction in multiconductor transmission lines and the solution of large scale problems. In addition, modeling of stochastic electromagnetic fields and time-reversal methods will be discussed.
Presentations in this
session
WE1A-1 :
A Symmetric Positive Semi-Definite FDTD Subgridding Algorithm for Arbitrary Grid Ratios With Uncompromised Accuracy
Authors:
Jin Yan, Dan Jiao
Presenter:
Dan Jiao, Purdue Univ., United States
(8:00 - 8:20 )
Abstract
Instability has been a major problem in FDTD subgridding methods. Reciprocity has been proposed to overcome the problem but with limited success in producing a symmetric system without compromising accuracy. In this paper, we algebraically derive an FDTD subgridding operator that is theoretically symmetric positive semi-definite, independent of the grid ratio and whether the grid is 2- or 3-D. Such an operator has only nonnegative real eigenvalues, and hence the stability of the resulting explicit time marching is guaranteed. We also translate this operator from its matrix form to the original FDTD difference equations to show how the fields involved in the subgridding are generated to obtain a symmetric system without compromising accuracy. Numerical experiments have validated the accuracy and stability of the proposed subgridding method.
WE1A-2 :
High-Order Sensitivity Analysis With FDTD and the Multi-Complex Step Derivative Approximation
Authors:
Kae-An Liu, Costas Sarris
Presenter:
Kae-An Liu, Univ. of Toronto, Canada
(8:20 - 8:40 )
Abstract
This paper introduces a novel and efficient technique for the computation of high-order, multi-parametric sensitivities, over a broad frequency range, with FDTD. Based on the multi-complex step derivative approximation, it is free of the well-known subtractive cancellation errors that are associated with finite-difference methods. It can be directly embedded in FDTD, running in parallel with its time-stepping loop, to calculate first and higher order partial derivatives of field components. For example, the full Hessian matrix of output functions of interest, such as scattering parameters, with respect to multiple design variables, can be computed in a single FDTD simulation.
WE1A-3 :
Accurate Transmission Lines Characterization via Higher Order Moment Method Solution of Novel Single-Source Integral Equation
Authors:
Farhad Sheikh Hossieni, Mohammad Hosen, Anton Menshov, Mohammad Shafieipour, Vladimir Okhmatovski
Presenter:
Vladimir Okhmatovski, Univ. of Manitoba, Canada
(8:40 - 9:00 )
Abstract
A new method for high precision extraction of per-unit-length inductance and resistance in the multi-conductor transmission lines (MTLs) is presented. The approach is based on higher-order geometrical representation of the MTL cross-section followed by higher-order method of moment discretization of a novel surface single-source integral equation. Through comparison against the analytically available solutions the method is shown to achieve 6 digits of precision in the extracted MTL's resistance (R) and inductance (L) using moderate computational resources. The proposed approach paves a way for numerically inexpensive characterization of MTLs of arbitrary cross-sections with analytic-like quality.
WE1A-4 :
A Fast and Robust Hybrid Solver for Realistic Electromagnetic Problems
Authors:
Kezhong Zhao, Rickard Petersson, Robert Kipp
Presenter:
Kezhong Zhao, ANSYS, Inc., United States
(9:00 - 9:20 )
Abstract
This paper presents a domain decomposition based hybrid finite element boundary integral method for solving electromagnetic radiation and scattering problems. The method employs a second order Robin’s transmission condition to unite the finite element method and boundary element method at the truncation surface, leading to rapid convergence of domain decomposition iterations. Furthermore, the method provides a systematic approach to hybridize various electromagnetic solvers into one powerful hybrid solver. In this work, we have combined finite element method, method of moments, and asymptotic high frequency methods such as physical optics and shooting and bouncing rays. A one-way domain decomposition method will also be presented to provide an alternative fast and efficient solution.
WE1A-5 :
An Extension of the Transverse Wave Formulation to Model Stochastic Electromagnetic Fields
Authors:
Johannes Russer, Michael Haider, Damienne Bajon, Sidina Wane, Peter Russer
Presenter:
Johannes Russer, Technische Univ. München, Germany
(9:20 - 9:30 )
Abstract
In this work we present the Correlation Transverse Wave Formulation (CTWF) method for direct computation of the auto- and cross correlation functions (ACFs and CCFs) of stationary stochastic electromagnetic fields.
The Transverse Wave Formulation (TWF), in performing a modal expansion of the Electromagnetic Fields in the homogeneous parts of the calculation domain and solving the near field continuity on both sides of the circuit surfaces, provides a direct derivation of the ACFs and CCFs without hypothesis on the structure of radiated fields.
WE1A-6 :
A New Time Reversal Method With Extended Source Locating Capability
Authors:
Wei Fan, Zhizhang Chen
Presenter:
Wei Fan, Department of Electrical and Computer Engineering,, Canada
(9:30 - 9:40 )
Abstract
Time reversal (TR) techniques have been introduced for many applications in acoustics, seismology, medical imaging, electro-magnetics, and so on. One of the applications is source locating in a time-invariant environment. By performing the TR process, temporal and spatial focusing occurs at the original source loca-tion and consequently the source locations are identified. In this paper, we propose a new TR method which allows the location identifications of narrow-band sources and moving sources which have not been considered. The proposed method is built on the conventional time-reversal method and therefore retains the simplicity and robustness of the conventional TR technique. Nu-merical examples are given to verify the effectiveness of the pro-posed method.
WE1B:
Transmission Lines and Transitions
Chair:
Irfan Ashiq
Chair organization:
National Instruments Corp.
Co-chair:
Jun (Brandon) Choi
Co-chair organization:
Syracuse Univ.
Location:
313A
Abstract:
In this session, transmission lines and transitions ranging from X band to mm-waves are presented. Planar and multilayer techologies are applied and various transitions between microstrip, waveguide, SIW and suspended microstrip are described in terms of the performance and design features. Furthermore, an advanced fabrication technique for a nanostructured transmission line with improved signal integrity will be discussed.
Presentations in this
session
WE1B-1 :
Cu/Co Metaconductor Based High Signal Integrity Transmission Lines for Millimeter Wave Applications
Authors:
Seahee Hwangbo, Arian Rahimi, Yong-Kyu Yoon
Presenter:
Seahee Hwangbo, Univ. of Florida, United States
(8:00 - 8:20 )
Abstract
This work reports copper/cobalt (Cu/Co) metaconductor based coplanar waveguide (CPW) transmission lines, featuring excellent signal integrity at K-bands and millimeter wave frequencies such as low conductor loss, reduced signal dispersion, and low noise figure. CPW transmission lines consisting of 10 pairs of Cu/Co thin film metaconductors with each layer thickness of 150 nm/25 nm, respectively, have been designed, fabricated and characterized. Experimental results show an RF resistance reduction of up to 50 % (Max.) in 7 GHz – 30 GHz, 25.5 % delay performance improvement, and 30 % thermal noise voltage reduction compared with reference copper based CPWs. Compared with devices from other literatures, the presented device shows the best signal integrity performance in Ku, Ku, and Ka bands.
WE1B-2 :
Enhancement of Phase-Shifting Nonreciprocity in Microstrip-Line-Based Metamaterials With Curvatures
Authors:
Tetsuya Ueda, Junji Yamauchi, Yuki Kubo, Tatsuo Itoh
Presenter:
Tetsuya Ueda, Kyoto Institute of Technology, Japan
(8:20 - 8:40 )
Abstract
New approach to enhance phase-shifting nonreciprocity of microstrip-line-based metamaterials with normally magnetized ferrite materials is proposed by using a combination of curvature of the line and asymmetric insertion of shunt inductive stubs. Numerical simulation and measurement results clearly show that the nonreciprocity for the case where the shunt inductive stubs are asymmetrically inserted to the inner side of the curved line was greater than that for another case where the shunt stubs are inserted to the outer side of the curved line. Decrease in radius of the curvature increases the geometrical asymmetry resulting in enhancement of the nonreciprocity.
WE1B-3 :
Novel Multilayer SIW Tapers Synthesized Using an Extended Transverse Resonance Method
Authors:
Thomas Jaschke, Arne Jacob
Presenter:
Thomas Jaschke, Technical Univ. of Hamburg, Germany
(8:40 - 9:00 )
Abstract
A novel type of substrate integrated waveguide (SIW) tapers in a multilayer stackup is presented. A simple and fast synthesis method is developed. Where the taper is modeled as a nonuniform transmission line with varying waveguide characteristics. These are determined using an transverse resonance method (TRM), which is extended to calculate a characteristic impedance. The syntheses procedure is explained and the results are compared to full-wave simulation. Measurement results of a compact, ultra-wideband, and low-loss taper at K/Ka-band validate the concept.
WE1B-4 :
Substrate Integrated Suspended Line to Air-Filled SIW Transition for High-Performance Millimeter-Wave Multilayer Integration
Authors:
Frederic Parment, Anthony Ghiotto, Tan Phu Vuong, Ludovic Carpentier, Ke Wu
Presenter:
Frederic Parment, Centre National d'Etudes Spatiales (CNES), France
(9:00 - 9:20 )
Abstract
Substrate integrated suspended line (SISL) and air-filled sub-strate integrated waveguide (AFSIW) technological platforms have been recently reported. They are both of high interest for the design of high-performance integrated millimeter-wave systems based on low-cost multilayer printed circuit board (PCB) technologies. This has been confirmed through simula-tions and experiments when comparing the insertion loss at Ka-band of the SISL and AFSIW with other conventional transmis-sion lines. To take advantage of both platforms and interconnect SISL and AFSIW structures and circuits, a broadband SISL to AFSIW transition is reported. For demonstration purpose, a back-to-back transition operating over the Ka-band has been designed and fabricated. It achieves a matching of better than -15 dB and an insertion loss of 0.27 ±0.22 dB (0.11 ±0.06 dB for the transition) over the Ka-band.
WE1B-5 :
Broadband 55–95 GHz Microstrip to Waveguide Transition Based on a Dielectric Tip and a Tapered Double-Ridged Waveguide Section
Authors:
Florian Voineau, Anthony Ghiotto, Eric Kerherve, Mathilde Sié, Baudouin Martineau
Presenter:
Florian Voineau, STMicroelectronics, France
(9:20 - 9:30 )
Abstract
As applications in E-band (60 - 90 GHz) are gaining increasing commercial interest, a full-band, low-cost and high performance microstrip to rectangular waveguide standard (WR12) transition is desired. The presented design covers a bandwidth from 55 GHz to 95 GHz thanks to smooth impedance transitions. A dielectric tip is machined at the end of the microstrip line to couple with a double ridged waveguide section, which is then linearly tapered to a standard WR12 section. Measurements on back-to-back transitions confirm wideband operation beyond E-band with a 3.6 dB insertion loss (1.8 dB per transition) and return loss lower than 10 dB (18 dB per transition) in the 55 to 95 GHz frequency range. Additionally, group delay is measured showing broadband operation in line with simulation.
WE1B-6 :
A Compact Ultra-Wideband Microstrip Transition
Authors:
Nils Hansen, Jan-Philip Mohncke, Stefan Radzijewski, Arne Jacob
Presenter:
Nils Hansen, Technical Univ. of Hamburg, Germany
(9:30 - 9:40 )
Abstract
Hybrid integration often requires to connecting components with different connector footprints, typical examples being MMICs and larger drop-in devices. In microstrip technology this calls for different line widths and substrate thicknesses. This paper proposes a novel transition between two microstrip lines of different width and height. The basic concept of the multilayer approach is to gradually adapt the field distribution along the transition while keeping the impedance constant. In simulation the optimized transition exhibits an impedance match in excess of 20 dB from DC to 20 GHz. For verification a back-to-back transition is fabricated and measured. It features more than 20 dB input match and an insertion loss below 0.74 dB in a bandwidth of 16.9 GHz, the results being in good agreement with simulation.
WE1C:
Novel Realizations of Non-Planar Filters and Multiplexers
Chair:
Giuseppe Macchiarella
Chair organization:
Politecnico di Milano
Co-chair:
Ming Yu
Co-chair organization:
Honeywell International Inc.
Location:
313B
Abstract:
New design techniques for non-planar filters and multiplexers are demonstrated. These new advances allow size and mass reduction while maintaing very high performance.
Presentations in this
session
WE1C-1 :
Design of a Dual-Band Bandpass Filter With Dispersive Coupling
Authors:
Ahmad Haidar, Hussein Ezzeddine, Stephane Bila
Presenter:
Ahmad Haidar, Xlim - CNRS- Unversite De Liroges, France
(8:00 - 8:10 )
Abstract
In this paper, we intend to design of a wide band dual-band filter with dispersive couplings for improved selectivity. The proposed approach consists to use this novel filter synthesis technique, taking advantage of the frequency variation of coupling values, for generating additional transmission zeroes. The dispersive coupling behavior is demonstrated and em-ployed to design a four pole filter with three transmission ze-ros. The design is validated by a prototype and a six-pole dual-band bandpass filter based on the same concept is pro-posed for 5G millimeter-wave bands.
WE1C-2 :
Tunable Absorptive Bandstop Filter With an Ultra-Broad Upper Passband
Authors:
Mark Hickle, Dimitrios Peroulis
Presenter:
Mark Hickle, Purdue Univ., United States
(8:10 - 8:20 )
Abstract
This paper presents a new broadband external coupling structure for tunable evanescent-mode cavity resonator-based bandstop filters. This coupling method has low parasitics, which when combined with the wide spurious-free range of evansecent-mode cavities enables the implementation of a 3 to 6 GHz tunable bandstop filter which has a measured low-loss upper passband with less than 3-dB of insertion loss up to 28.5 GHz.
WE1C-3 :
A Compact Waveguide Filtering Structure With Transmission Zeros for Multi-Beam Satellites
Authors:
Luciano Accatino, Giuseppe Macchiarella, Giorgio Bertin
Presenter:
Luciano Accatino, AC Consulting, Italy
(8:20 - 8:40 )
Abstract
The paper presents a novel approach for realizing a compact filtering structure composed of single-mode low-loss rectangular waveguide cavities able to implement high-selectivity transfer functions of elliptic type. The creation of transmission zeros is obtained by disposing the cavities in a suitable geometrical configuration and exploiting the properties of the selected resonant mode (TE102). The proposed approach is employed in the design of a four-pole elliptic filter at Ka-band. This is the basic building block for the extension to a 6-pole filter with 2 transmission zeros that can be used in low-loss high-power and high-selectivity diplexers required by modern multibeam payload of last generation satellites operating at Ka-band and above
WE1C-4 :
New Design Methodology for Multiband Waveguide Filters Based on Multiplexing Techniques
Authors:
Santiago Cogollos, Pablo Micó, Joaquin Vague, Vicente Boria-Esbert, Marco Guglielmi
Presenter:
Santiago Cogollos, Univ. Politècnica de València, Spain
(8:40 - 9:00 )
Abstract
This paper introduces a new design methododology for multiband waveguide filters based on a manifold approach. The new design algorithm is based on a subtle modification of the well-known multiplexer design algorithm. Transmission zeros, enhancing the overall performance, are also shown to be naturally produced. In addition to theory, the measured performance of a multiband filter is shown indicating very good agreement with the simulated response thereby fully validating the new design methodology.
WE1C-5 :
Triple-Band Dielectric Resonator Bandpass Filters
Authors:
Li Zhu, Raafat Mansour, Ming Yu
Presenter:
Li Zhu, Honeywell International Inc., Canada
(9:00 - 9:20 )
Abstract
This paper presents a novel triple-band bandpass filter employing dielectric loaded resonators that support three operating modes. The proposed design employs dielectric resonators shaped in a way to have independent control of the resonant frequencies of the three modes and to facilitate inter-resonator coupling. The proposed triple-band dielectric filter offers high Q and is miniature in size in comparison to previously reported multi-band filter designs. A 3rd order C-band triple-band dielectric filter is designed, manufactured, and tested to validate the proposed concept. To the best of authors’ knowledge, this is the first triple-band filter realized with dielectric resonators.
WE1C-6 :
A Design Methodology for Fully Canonic NRN Filters in Coaxial Technology
Authors:
Giuseppe Macchiarella, Stefano Tamiazzo, Valentina Verri
Presenter:
Giuseppe Macchiarella, Politecnico di Milano, Italy
(9:20 - 9:40 )
Abstract
This paper presents a detailed approach to the design and dimensioning of coaxial filters with fully canonic elliptic response. In order get a compact configuration the extracted-pole in-line configuration with non-resonating nodes (NRN) is adopted. First the synthesis of a low-pass prototype is carried out and the generalized coupling coefficients together with the resonant frequencies are computed as outlined in the literature. A suitable de-normalized equivalent circuit is then derived with reference to the specific filter configuration here considered. Finally, the dimensioning of the structure is carried out suitably exploiting full wave simulations for imposing the parameters of the equivalent circuit obtained from the synthesis to the physical structure. The proposed methodology has been validated by the design and fabrication of two high selectivity filters to connect in cascade for realizing a band pass filter easily tunable both in center frequency and bandwidth
WE1D:
Low Noise Amplifiers - Progress and Applications
Chair:
James Sowers
Chair organization:
SSL
Co-chair:
James Whelehan
Co-chair organization:
JJW Consulting Inc.
Location:
313C
Abstract:
Progress in low noise technology has improved application's performance. This session starts with a comparison of 35nm and 50nm gate length mHEMT technology for mm-wave MMIC LNA. This is followed by the development of a D-Band MMIC LNA with a 50% bandwidth and 3dB noise figure using 100nm and 50nm mHEMT technology. The advanced development of a 300 GHz LNA S-MMIC is used for next generation imaging and communication applications. A discussion of low voltage and low power UWB CMOS LNA using current reused and full body bias techniques. The session concludes with a 94-96 GHz phased array receiver frontend with 5bit phase controlled and 5dB noise figure using 35nm CMOS SOI.
Presentations in this
session
WE1D-1 :
Comparison of a 35-nm and a 50-nm Gate-Length Metamorphic HEMT Technology for Millimeter-Wave Low-Noise Amplifier MMICs
Authors:
Fabian Thome, Arnulf Leuther, Hermann Massler, Michael Schlechtweg, Oliver Ambacher
Presenter:
Fabian Thome, Fraunhofer IAF, Germany
(8:00 - 8:20 )
Abstract
Based on two low-noise amplifier (LNA) millimeter-wave integrated circuits (MMICs), this paper reports on a comparison between a 35-nm and a 50-nm gate-length metamorphic high-electron-mobility transistor technology. The LNA targets applications in an extended W-band with an operating frequency between 67-116 GHz. Both MMICs yield a scalar linear gain of at least 20 dB for more than an octave bandwidth. The average scalar linear gain of the 35-nm (LNA 1) and 50-nm LNA (LNA 2) is 26.2 dB and 25 dB, respectively. The measured noise figure of LNA 1 and LNA 2 achieves an excellent average value for the entire W-band (75-110 GHz) of 1.9 dB and 2.1 dB, respectively. To the best of the authors’ knowledge LNA 1 is the first MMIC which yields an average noise figure of 1.9 dB over the entire W-band.
WE1D-2 :
D-Band Low-Noise Amplifier MMIC With 50% Bandwidth and 3.0 dB Noise Figure in 100 nm and 50 nm mHEMT Technology
Authors:
Rainer Weber, Hermann Massler, Arnulf Leuther
Presenter:
Rainer Weber, Fraunhofer Institute for Applied Solid State Physics, Germany
(8:20 - 8:40 )
Abstract
We present the development of a wideband low-noise amplifier MMIC in the D-band with a smart combination of coplanar transmission lines and active devices to minimize noise figure. The identical three-stage LNA has been realized in metamorphic HEMT technologies with 100 nm and 50 nm gate length. The 50 nm LNA MMIC achieves a linear gain of 30.8 dB together with a bandwidth of 67 GHz up to 164 GHz and a noise figure of 3.0 dB. The performance of 100 nm LNA is slightly worse.
WE1D-3 :
A 300 GHz Low-Noise Amplifier S-MMIC for Use in Next-Generation Imaging and Communication Applications
Authors:
Axel Tessmann, Arnulf Leuther, Sandrine Wagner, Hermann Massler, Hans-Peter Stulz, Martin Zink, Markus Riessle, Thomas Merkle, Michael Kuri
Presenter:
Axel Tessmann, Fraunhofer IAF, Germany
(8:40 - 9:00 )
Abstract
A WR-3 (220 – 330 GHz) low-noise amplifier (LNA) circuit was realized by using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide topology (GCPW) and cascode transistors, thus leading to a very low noise figure in combination with high gain and large operational bandwidth. The packaged LNA achieved a maximum gain of 29 dB at 314 GHz and more than 26 dB in the frequency range from 252 to 330 GHz. An average room temperature noise figure of 6.5 dB was measured between 280 and 330 GHz. Furthermore, the LNA circuit has been used to realize a very compact WR-3 single-chip receiver module, demonstrating a conversion gain of 7.5 dB and a noise figure of 11dB at the frequency of operation.
WE1D-4 :
Low Voltage and Low Power UWB CMOS LNA Using Current-Reused and Forward Body Biasing Techniques
Authors:
Jyh Chyurn Guo, Ching Shiang Lin, Yu Tang Liang
Presenter:
Jyh Chyurn Guo, National Chiao Tung Univ., Taiwan
(9:00 - 9:20 )
Abstract
A ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated in 0.18um CMOS technology. The successful integration of current-reused and forward body biasing (FBB) techniques in a cascade amplifier can enable an aggressive scaling of the supply voltages, VDD and VG1 to 1.0V and 0.53V. The low voltage feature from FBB leads to more than 50% saving of power dissipation to 5.2mW. The measured power gain (S21) can reach 10.55~12.6dB and noise figure (NF50) is 3.2~3.95 dB through the UWB (3~10.5GHz). This UWB LNA with small chip area (0.69mm^2) provides a solution of low voltages, low power, and low cost.
WE1D-5 :
A 94–96 GHz Phased-Array Receive Front-End With 5-Bit Phase Control and 5 dB Noise Figure in 32 nm CMOS SOI
Authors:
Mustafa Sayginer, Gabriel Rebeiz
Presenter:
Mustafa Sayginer, Univ. of California, San Diego, United States
(9:20 - 9:40 )
Abstract
This paper presents a W-band phased-array receive front-end in 32-nm CMOS silicon-on-insulator (SOI) technology. The measured performance shows an average gain of 17-18 dB and a NF of 5 dB at 94-96 GHz. The phase shifter is based on passive switched networks with a measured RMS phase and gain error of < 6° and < 1 dB at 94-96 GHz, respectively. The front-end consumes 24.3 mW from 1.3 V. According to the author’s knowledge, the NF and power consumption is state-of-the-art for silicon-based phased-array receivers at W-band frequencies.
WE1E:
Advanced Doherty PAs
Chair:
Zoya Popovic
Chair organization:
Univ. of Colorado
Co-chair:
Wolfgang Heinrich
Co-chair organization:
Ferdinand-Braun-Institut
Location:
314
Abstract:
Broadband Doherty PAs with simplified compact output matching networks with increased bandwidth are presented with GaN HEMTs and InGaP HBTs for communications. Other new architectures include output networks with modified modulating load range, phase compensation, and harmonic terminations.
Presentations in this
session
WE1E-1 :
Design and Characterization of a 1.7–2.7 GHz Quasi-MMIC Doherty Power Amplifier
Authors:
Roberto Quaglia, Mark Greene, Matthew Poulton, Steve Cripps
Presenter:
Roberto Quaglia, Cardiff University, United Kingdom
(8:00 - 8:20 )
Abstract
This paper presents the design and characterization of a Doherty power amplifier for small cells applications in the
1.7–2.7GHz band. A quasi-monolithic realization is selected for its cost advantages when compared to a fully-monolithic solution, and relies on GaN HEMT active devices and passive networks on GaAs substrate. A lumped elements Doherty combiner is designed to maximize the bandwidth at which the power amplifier shows high back-off efficiency, that results higher than 37% in the 1.7–2.7GHz band in measurements. The dual-input topology permits high flexibility in the optimization of performance, in particular in terms of bandwidth. The fabricated Doherty favourably compares to similar previously published power amplifiers.
WE1E-2 :
2.6 GHz GaN-HEMT Doehrty Power Amplifier Integrated Circuit With 55.5% Efficiency Based on Compact Load Network
Authors:
Hwiseob Lee, Wonseob Lim, Jongseok Bae, Wooseok Lee, Hyunuk Kang, Youngoo Yang
Presenter:
Hwiseob Lee, Sungkyunkwan Univ., Republic of Korea
(8:20 - 8:40 )
Abstract
This paper presents a GaN-HEMT DPA IC based on a compact load network for LTE small-cells. The gate widths of the transistors for the carrier and peaking amplifiers are optimized to have the same load impedance of 100 Ω. A shunt inductor is added to compensate for the output capacitor of each transistor with parallel resonance. A π-type high-pass impedance transformer based on lumped components is used for the load impedance modulation. Parallel inductors from the resonant circuit and the impedance transformer are merged for further simplification. As a result, only two inductors remain in the load network. For verification, a 2.6 GHz DPA IC with an on-chip load network and input matching networks was designed and fabricated using a 0.4 µm GaN-HEMT process.
WE1E-3 :
Novel Broadband Doherty Power Amplifier Design for Multiband Handset Applications
Authors:
Kiichiro Takenaka, Tsuyoshi Sato, Hidetoshi Matsumoto, Makoto Kawashima, Norio Nakajima
Presenter:
Kiichiro Takenaka, Murata Manufacturing Co., Ltd., Japan
(8:40 - 9:00 )
Abstract
In this paper, novel broadband Doherty power amplifier design for multi band handset applications, which requires only two components for output network, is proposed. Based on simplified output network, the proposed Doherty power amplifier is analyzed. The proposed Doherty power amplifier is demonstrated experimentally with InGaP-HBT. A PAE of 45.0% and an E-UTRA ACLR of -36.4 dBc at an average output power of 26.4 dBm are measured at 800 MHz under LTE 10 MHz, QPSK, 12 RB operation, and the efficiency improvement from Class AB operation achieves 12%. Moreover, the proposed Doherty power amplifier maintains more than 41.0% efficiency with an E-UTRA ACLR of below -35.7 dBc from 700MHz to 925MHz, corresponding to 28% fractional bandwidth.
WE1E-4 :
Compact and High Efficiency Doherty Power Amplifiers Using a New Modulating Load Range
Authors:
Mohammad Darwish, Anh-Vu Pham
Presenter:
Mohammad Darwish, Univ. of California, Davis, United States
(9:00 - 9:20 )
Abstract
We propose a new modulating load range for a Doherty power amplifier (DPA) that will maintain maximum drain voltage swing and consequently peak efficiency in over 6-dB power back-off (PBO). At 6-dB PBO, the real part of the new modulating load seen by the main amplifier is less than 2*Ropt. The new load range allows for the design of a compact, low loss output matching and combiner circuit and a simple single drain bias line for the main and auxiliary amplifiers. The proposed 2-stage DPA using the new modulating loads is designed at 15 GHZ in a 0.15 µm enhancement mode (E-mode) Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The proposed DPA achieves a measured Psat of 27 dBm, a peak power added efficiency (PAE) of 41% and a PAE of 34% at 6 dB PBO with a gain of 17 dB.
WE1E-5 :
Efficiency Enhanced Post-Matching Doherty Power Amplifier Based on Modified Phase Compensation Network
Authors:
Zhou Xinyu, Zheng Shaoyong, Chan Wingshing, Derek Ho
Presenter:
Zhou Xinyu, City Univ. of Hong Kong, Hong Kong
(9:20 - 9:30 )
Abstract
The post-matching (PM) topology is an effective approach to broaden the bandwidth of Doherty power amplifiers (DPA). However, its efficiency has been limited because previous works only considered the fundamental frequency termination, and not the harmonics. In this paper, a modified phase compensation network is used in the PM Doherty topology to realize a third harmonic open as viewed by both carrier and peaking device in the Doherty region. Hence, the efficiency enhancement in the en-tire Doherty region can be achieved. For demonstration purpose, a high efficiency Doherty prototype is devised based on two iden-tical 10W GaN HEMTs. Measurement results show that at least 50% drain efficiency is achieved at 6 dB back-off power from 1.3 to 1.8 GHz.
WE1E-6 :
Harmonically Engineered and Efficiency Enhanced Power Amplifier Design for P3dB/Back-off Applications
Authors:
Tushar Sharma, Srinidhi Embar R, Damon Holmes, Ramzi Darraji, Jeff Jones, Fadhel Ghannouchi
Presenter:
Tushar Sharma, Univ. of Calgary, Canada
(9:30 - 9:40 )
Abstract
The paper extends the concept of waveform shaping for back–off applications which can be applied to realize power
amplification sub-blocks in load modulation based power amplifiers. The proposed theory starts with deriving the intrinsic
current and voltage waveforms as a function of output power back-off factor. Thereafter, a design methodology is proposed to optimize the performance of power amplifier for back–off requirements within a limit of 3 dB gain compression. For
experimental validation, the implementation is carried out using a 1.95 mm gallium nitride (GaN) die. The single-ended PA is designed to operate as a carrier PA in a 35 dBm average asymmetric Doherty configuration (44 dBm peak power). The PA
exhibits a drain efficiency of 78% at an average output power of 35 dBm at a frequency of 2.6 GHz.
WE1F:
Advances in mm-Wave/THz Communication Systems
Chair:
Jae-Sung Rieh
Chair organization:
Korea Univ.
Co-chair:
Imran Mehdi
Co-chair organization:
Jet Propulsion Lab
Location:
315
Abstract:
Recent advances in communication systems operating in mm-wave and THz frequency bands and developed for high data rate and energy efficiency in both short- and long-range applications will be presented.
Presentations in this
session
WE1F-1 :
56-Gbit/s 16-QAM Wireless Link With 300-GHz-Band CMOS Transmitter
Authors:
Kyoya Takano, Kosuke Katayama, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima
Presenter:
Kyoya Takano, Hiroshima University, Japan
(8:00 - 8:20 )
Abstract
The 300-GHz band enables ultrahigh-speed wireless communication because of its vast frequency range. We present a wireless link with a 300-GHz-band CMOS transmitter that im-proves the system signal-to-noise ratio (SNR) by using a frequen-cy-doubler-based subharmonic mixer called a “square mixer” and an architecture with image and local oscillator (LO) sup-pression. It achieved wireless digital transmission at 56 Gbit/s over 5 cm with 16-QAM. In addition, we compare the perfor-mance of wireless links using a figure-of-merit (FoM). This wire-less link has an approximately 7.5 times higher FoM than a re-cently reported wireless link based on a CMOS transmitter.
WE1F-2 :
An Integrated 7-Gb/s 60-GHz Communication Link Over Single Conductor Wire Using Sommerfeld Wave Propagation in 65-nm CMOS
Authors:
Kai Zhan, Abhishek Agrawal, Manoj Johnson, Ashwin Ramachandran, Tejasvi Anand, Arun Natarajan
Presenter:
Kai Zhan, Oregon State Univ., United States
(8:20 - 8:40 )
Abstract
The low loss and wide dispersion-free bandwidth of Sommerfeld-wave propagation on a single conductor wire (SCW) promises energy-efficient high data rate links. The first fully-integrated end-to-end wireline transceiver system on a SCW using Sommerfeld-wave propagation mode is demonstrated using a 60-GHz carrier frequency. Implemented in 65-nm CMOS, the proposed system includes on-chip radial-mode antennas as well as integrated serializers, 60-GHz OOK modulator, demodulator, deserializers and clocking. The link achieves 7 Gb/s data rate across 20-cm of 26AWG bare copper wire (diameter = 0.4 mm), while consuming 70.9 mW of power. Operating at 6 Gb/s and 7 Gb/s, this work achieves BER 1e-12 and 1e-5 respectively.
WE1F-3 :
A Low-Power FSK/Spatial Modulation Transmitter for mm-Wave Wireless Links
Authors:
Kai Zhan, Jian Kang, Guangxin Wang, Telesphor Kamgaing, Rahul Khanna, Georgios Dogiamis, Huaping Liu, Arun Natarajan
Presenter:
Kai Zhan, Oregon State Univ., United States
(8:40 - 9:00 )
Abstract
Energy-efficient, multi-Gb/s wireless links are of interest for short-range board-to-board links within server chassis/enclosed server platforms. In this paper, we propose to leverage the small physical size/large available bandwidth of mm-wave systems to demonstrate combined frequency and spatial modulation in a mm-wave TX, targeting links operating in slow-varying channels. A pulsed mm-wave digitally-controlled oscillator (DCO) provides low-power FSK capability, while variable pulse trigger delay achieves controlled relative phase between TX elements for low-power space-shift keying (SSK). A two-element 65-nm CMOS TX prototype is packaged with PCB antennas to demonstrate a 2-FSK/4-SSK 3-Gb/s TX up to 60-cm with 21.4 mW power consumption, achieving ~7.1 pJ/bit.
WE1F-4 :
High Energy-Efficiency High Bandwidth-Density Sub-THz Interconnect for the Last-Centimeter Chip-to-Chip Communications
Authors:
Yu Ye, Bo Yu, Xuan Ding, Xiaoguang Liu, Jane Gu
Presenter:
Yu Ye, Univ. of California, Davis, United States
(9:00 - 9:20 )
Abstract
This paper presents a high energy-efficiency high bandwidth-density dielectric waveguide based sub-THz interconnect, including a near-field coupled low-loss, wide-bandwidth sub-THz channel and a high energy-efficiency transceiver. The channel loss is 4.0 dB with 59 GHz 3-dB bandwidth. The transmitter output power is -1.7 dBm with 6.7 mW of DC power consumption, and the receiver DC power consumption is 7.5 mW. The energy efficiency is 2.8 pJ/b, and the bandwidth density is 33.3 Gbps/mm2.
WE1F-5 :
Long-Range Wireless Link With Fiber-Equivalent Data Rate
Authors:
Kenneth Brown, Andrew Brown, Travis Feenstra, Darin Gritters, Elbert Ko, Shane O'Connor, Michael Sotelo
Presenter:
Kenneth Brown, Raytheon Company, United States
(9:20 - 9:40 )
Abstract
Recent advances in both high power millimeter wave (mmW) Gallium Nitride (GaN) technology and high-speed System on Chip (SoC) modem technology has enabled the development, fabrication, and field testing of a high speed, long range wireless datalink with fiber equivalent speed. The link exhibited nearly an 80 Gbps bi-directional data rate (40 Gbps in each direction) over a range of 16km. This was accomplished by using a combination of frequency and polarization multiplexing to combine a total of eight ~10 Gbps modem channels on the lower (71-76 GHz) and upper (81-86 GHz) E-band channels. Each modem channel was separately up-converted and amplified with a Gallium Nitride (GaN) power amplifier. Frequency multiplexing was accomplished at E-band (post-amplification) to maintain high Power Added Efficiency (PAE) in the power amplifiers.
WE1G:
Passive RFID and MMID Sensors
Chair:
Apostolos Georgiadis
Chair organization:
Heriot-Watt Univ.
Co-chair:
Luca Roselli
Co-chair organization:
Univ. of Perugia
Location:
316A
Abstract:
RFID technology has established itself as an enabling technology for ultra low power sensors with numerous applications ranging from wearable sensors to the Internet-of-Things (IoT). Moreover, high frequency operation towards millimeter waves is allowing for a larger bandwidth and directive antenna arrays which can allow a large operating range and larger bit rates. The session includes advances in low cost packaging and integration of RFID tags into wearables, printed millimeter wave backscatter sensors and passive antenna based sensing circuits.
Presentations in this
session
WE1G-1 :
Millimeter-Wave Backscatter: A Quantum Leap for Gigabit Communication, RF Sensing, and Wearables
Authors:
John Kimionis, Apostolos Georgiadis, Ana Collado, Manos Tentzeris
Presenter:
John Kimionis, Georgia Institute of Technology, United States
(8:00 - 8:20 )
Abstract
The first-ever reported Gbps backscatter trans- mission is presented at millimeter-wave frequencies, extremely expanding the potential of backscatter radio as a low-energy, low-complexity communication platform. Minimal front-ends are implemented that can be used for multi-gigabit communication and RF sensing, achieving scattering frequencies of at least 4 GHz away from a carrier center frequency of 24 GHz. The significantly wideband operation of these minimal communicators will enable broadband wireless transmission with less than 0.15 pJ/bit front- end energy consumption at 4 Gbps and sensing with an extensive number of low-power sensors. The front-ends are additively manufactured using inkjet printing on flexible substrates that can be directly integrated with wearables for challenging mobile applications in 5G and the Internet of Things (IoT).
WE1G-2 :
Long Range Wireless Interrogation of Passive Humidity Sensors Using Van-Atta Cross-Polarization Effect and 3D Beam Scanning Analysis
Authors:
Dominique Henry, Jimmy Hester, Hervé Aubert, Patrick Pons, Manos Tentzeris
Presenter:
Dominique Henry, LAAS-CNRS, France
(8:20 - 8:40 )
Abstract
This paper reports for the first time a long-range interrogation (> 50 meters) of wireless and batteryless humidity sensors combining a Van-Atta retrodirective array and a 3D beam scanning using a 24GHz Frequency-Modulated Continuous-Wave radar. Van-Atta cross-polarization properties, as well as the use of dedicated statistical estimators and Synthetic Aperture Radar technique allow the long-range measurement of the relative humidity at a distance of 58 meters. A measurement sensitivity of 0.2dB to 0.4dB per %RH was measured as a linear variation of the proposed estimator with a standard error of ±0.005dB.
WE1G-3 :
Single Transistor Passive Backscatter Sensor
Authors:
Ricardo Correia, Nuno Carvalho
Presenter:
Nuno Carvalho, Instituto De Telecomunicacoes, Portugal
(8:40 - 9:00 )
Abstract
This paper presents a fully passive wireless sensor based on a single E-pHEMT device. The implemented circuit behaves as a RF to DC rectifier when the gate of E-pHEMT is unbiased and as a modulator when the generated voltage is 0.6 V. The sensor achieves 83% efficiency for 16 dBm of input power and it is demonstrated that for higher powers the backscatter modulator has a very good behaviour.
WE1G-4 :
Miniaturized Self-Powered UHF RFID Tag-Based Sensor
Authors:
Abdulhadi Abdulhadi, Yassin Belaizi, Arnaud Vena, Tayeb Denidni
Presenter:
Tayeb Denidni, Institut national de la recherche scientifique, Canada
(9:00 - 9:20 )
Abstract
This paper presents a low-cost self-powered UHF RFID tag-based sensor. The proposed tag-based sensor comprise a miniaturized dual-feed loop tag antenna incorporated with multiple RFID chips and a resistive sensor for utilizing reference and sensor nodes. One RFID chip is integrated in the reference node transmitting in the sensing process, and another one with integrated sensor (sensor node) transmits a signal impacted by the sensed data. By measuring the power ratio of the required minimum power transmitted by the reader to wake-up the RFID chips in both the reference and sensor nodes, the reader then can extract the sensed data i.e. temperature. The miniaturized RFID tag-based sensor is fabricated and experimentally evaluated. The measured results demonstrate that the developed miniaturized dual-feed tag-based sensor can be integrated with resistive sensor for low-cost wireless sensor nodes.
WE1G-5 :
Antennas and Antenna-Electronics Interfaces Made of Conductive Yarn and Paint for Cost-Effective Wearable RFIDs and Sensors
Authors:
Xiaochen Chen, Shubin Ma, Leena Ukkonen, Toni Björninen, Johanna Virkki
Presenter:
Johanna Virkki, Tampere Univ. of Technology, Finland
(9:20 - 9:40 )
Abstract
We characterize textile antennas and antenna-electronics inter-connections created by depositing conductive paint and by em-broidering with conductive yarn. Both approaches are based on affordable materials and enable single-step manufacturing of RFID tag on textiles. To achieve further material savings, our dipole antennas comprise of line-type structures instead of the commonly used metallized surfaces. To understand the electro-magnetic properties of the antennas in and to assess the quality of the conductors, both wireless measurements and electromag-netic field simulations were used. Overall, the tags made of the conductive yarn by embroidering were detectable at the dis-tances of 5-to-6 meters in air and at 2 meters on the human body. Conductive paint yielded the corresponding distances of 3.5-to-4 meters and 1 meter, respectively.
WE1H:
Passive Array Systems and Beam Formers
Chair:
Roberto Vincenti Gatti
Chair organization:
Univ. of Perugia
Co-chair:
Shishir Punjala
Co-chair organization:
JSMN Inc.
Location:
316B
Abstract:
Novel architectures and innovative technologies are applied to the implementation of passive antenna radiating elements and array antenna systems ranging from L-band to THz frequencies and covering a wide range of applications. Micro-patterned mm-wave lens, application of composite right/left handed materials, silicon-based terahertz antennas, reconfigurable antennas based on SIW technology, novel architectures for MIMO applications and mm-wave silicon-based DRA arrays are the main topics presented in this session.
Presentations in this
session
WE1H-1 :
Micropatterned W-Band Antenna Tiles
Authors:
Ryan Westafer, James Dee, Matthew Habib
Presenter:
Ryan Westafer, Advanced Concepts Laboratory, United States
(8:00 - 8:20 )
Abstract
Planar W-band antenna tiles were created by defining pixelated subwavelength metal patterns on 4 mm square and 500 micron thick glass tiles space fed by an open ended waveguide. The metal patterns were optimized to form beams and convert polarization. The metal patterns were found by genetic algorithm optimization of finite difference time domain simulations. Several antennas were fabricated, measured, and found to agree with the predictions.
WE1H-2 :
Dual-Polarized Frequency-Scanning Phased-Array Antenna Based on Composite Right/Left Handed Serial Feed Network
Authors:
Dongyin Ren, Jun (Brandon) Choi, Tatsuo Itoh
Presenter:
Dongyin Ren, Syracuse Univ., United States
(8:20 - 8:40 )
Abstract
A dual-polarized frequency-scanning phased-array antenna based on composite right/left handed (CRLH) feed network is presented. The proposed feed network provides phase advance in addition to phase delay and allows uniform power distribution to each antenna element, thereby delivering high directivity frequency-scanning radiation beams that can scan the full-hemisphere.The working mechanism is presented through a broadband microstrip antenna. The orthogonally placed feed networks and coupling slots enable the dual-polarized (horizontal/vertical) operation of the proposed antenna array without compromising the high isolation between two feeding ports. Full space frequency scanning capability for both polarization states are verified experimentally.
WE1H-3 :
High-Efficiency Phased Array Using Sequential Over-the-Air Combining
Authors:
Avraham Sayag, Emanuel Cohen
Presenter:
Avraham Sayag, Technion - Israel Institute of Technology, Israel
(8:40 - 8:50 )
Abstract
This paper presents a novel sequential transmitter phased array architecture for efficiency boosting of the transmitter-receiver link. The boost in efficiency is achieved by transmitting the signal peaks and the remaining data through different chains, each of which optimized for specific power, and recombining the signal over-the-air. Experimental results verified the over-the-air com-bining concept in actual environment. An 80 MHz 802.11ac OFDM signal with 9.7dB PAPR at 5.5GHz was transmitted through an array of 4 patch antennas. The received EVM was lower than -38dB, similar to a uniform excited array. Simulations show that this transmitter can boost the efficiency by 31% and 54% for 8dB and 10dB power back-off from the array maximum power respectively, without any penalty in die area nor antenna size compared to a uniform array.
WE1H-4 :
A 320 GHz On-Chip Slot Antenna Array Using CBCPW Feeding Network in 0.13-µm SiGe Technology
Authors:
Zhang Ju Hou, Yang Yang, Xi Zhu, Shaowei Liao, Shum Man, Quan Xue
Presenter:
Zhang Ju Hou, City Univ. of Hong Kong, Hong Kong
(8:50 - 9:00 )
Abstract
A 320 GHz on-chip 2 × 2 antenna array employing a compact feeding network is presented in this paper. The feeding network is designed based on the conducted-back coplanar waveguide (CBCPW) transmission line with a compact size, which has the full shielding performance providing good isolation from circuits around or below the CBCPW transmission lines. The proposed on-chip feeding network and antenna array are fabricated using standard 0.13-μm SiGe process. The antenna array is measured using a specially designed backside radiation measurement system. The simulated and measured results show that the backside radiation on-chip antenna array has a measured peak gain of 7.9 dBi at 320 GHz.
WE1H-5 :
A Duplexing Hybrid Antenna Design for Full-Duplex Applications
Authors:
Li-Chi Chang, Huei Wang
Presenter:
Li-Chi Chang, National Taiwan Univ., Taiwan
(9:00 - 9:10 )
Abstract
In this paper, a hybrid antenna is proposed for full-duplex system. The antenna is utilized a single slot for resonance, and the length is designed as 3/4 λ0 to generate a short circuit at the other port. Therefore, two parallel transmission lines could be extended across the specified slot design and individually con-nected with two equal length open stubs for impedance matching. After the design optimization, the RF bandwidth is from 24 to 25 GHz, and an isolation 58 dB at the center frequency of the system is achieved by using liquid-crystal polymer (LCP) material for low loss. The front-end module with wire bonding assembly is also considered in 3D simulation.
Index Terms—slot antenna, duplexer, full-duplex system, high isolation, liquid-crystal polymer.
WE1H-6 :
A Wideband Antenna With Switchable Beams
Authors:
Jun Hu, Zhang-Cheng Hao
Presenter:
Zhang-Cheng Hao, Southeast Univ., China
(9:10 - 9:20 )
Abstract
This paper proposes a low profile wideband pattern reconfigurable stacked patch antenna, which is composed of four antenna elements. Each antenna element has two switchable feeding ports. Individual excitation at the two feeding ports can produce a 180° phase-shifting due to the symmetrical structure. A reconfigurable 2×2 prototype is developed by employing four single-pole double-throw (SPDT) switches. By properly selecting the feeding ports for the four antenna element, the 2×2 antenna array can generate four beams including sum beams, difference beams in XOZ and YOZ planes and bi-difference beam. The measured 10-dB impedance bandwidths are 5.18-6.01 GHz, 5.17-6.24 GHz, 5.17-6.23 GHz and 5.18-6.24 GHz for the sum, x-difference, y-difference and bi-difference beams, respectively.
WE1H-7 :
Novel Wideband Decoupling Technique for MIMO Antenna Arrays With Two Independently Controlled Transmission Zeros
Authors:
Yifeng Cheng, Kwok-Keung Cheng
Presenter:
Yifeng Cheng, Chinese Univ. of Hong Kong, China
(9:20 - 9:30 )
Abstract
A novel wideband decoupling technique for closely-spaced two-element MIMO antenna array is proposed. Wideband and high port isolation is achieved by the creation of two independently controlled transmission zeros (S_21=0) at appropriately selected frequencies. Simulated and measured results show that the proposed method can offer port isolation enhancement of > 20 dB over a fractional bandwidth of almost 20%.
WE1H-8 :
High Resistivity Silicon DRA Array for Millimeter-Wave High Gain Applications
Authors:
Alireza Zandieh, Ahmed Abdellatif, Aidin Taeb, Safieddin Safavi-Naeini
Presenter:
Safieddin Safavi-Naeini, Univ. of Waterloo, Canada
(9:30 - 9:40 )
Abstract
The paper presents the design, and measurement results of a new millimeter-wave Dielectric Resonator Antenna (DRA) array implemented in high resistivity Silicon Image Guide (SIG) technology. The proposed SIG antenna offers a low-cost, and high gain DRA array concept for millimeter-wave applications. The design includes a low loss SIG power splitter which has been used to feed the 4-by10 antenna array. The antenna with the feed has a measured return loss better than -10dB within the frequency range from 90 GHz to 110 GHz. The measured gain is 19 dB at 97 GHz. The measurements data are in good agreement with the simulation results. A single mask dry etching process has been used to realize the proposed antenna. A group of narrow non-radiative supporting beams are designed to enhance the structure mechanical stability.
WE1I:
Advanced Sensors for Biological Applications
Chair:
Abbas Omar
Chair organization:
Univ. of Magdeburg
Co-chair:
Jung-chih Chiao
Co-chair organization:
Univ. of Texas at Arlington
Location:
316C
Abstract:
The contributions in this session present advanced microwave sensors for biological applications. The applications range between blood-sugar sensors to systems capable of characterizing individual biological cells.
Presentations in this
session
WE1I-1 :
A CMOS Single-Cell Deformability Analysis Using 3D Hydrodynamic Stretching in a GHz Dielectric Flow Cytometry
Authors:
Jun-Chau Chien, Mekhail Anwar, Ali Niknejad
Presenter:
Jun-Chau Chien, Univ. of California, Berkeley, United States
(8:00 - 8:20 )
Abstract
This paper presents a high-throughput flow cytometry in CMOS for single-cell deformability analysis. By applying hydrodynamic stretching using microfluidics, cells are compressed and deformed depending on its elasticity. A CMOS 11-GHz dielectric sensor with on-chip coplanar electrodes is used to measure the degree of deformation through changes in the capacitance encoded in the measured waveforms. Experiments using polystyrene beads and THP-1 cells with and without ethanol incubation demonstrate the system capability with a throughput greater than 1 kcells/sec.
WE1I-2 :
Microwave Permittivity Extraction of Individual Biological Cells Submitted to Different Stimuli
Authors:
Amel Zedek, David Dubuc, Katia Grenier
Presenter:
Amel Zedek, Laboratoire d'analyse et d'architecture des systèm, France
(8:20 - 8:40 )
Abstract
This paper describes the relative permittivity extraction of cells submitted to different stimuli by using a microwave biosensor, specifically developed to analyze single cells in their culture medium. The sensitive part of the device is constituted by a 5 μm coplanar gap, over which the cell is blocked by a mechanical trap. It allows to obtain the capacitive and conductive contrasts of a cell. Electromagnetic simulations where the cell (sphere) permittivity is tuned permit to define fitted calibration curves linking capacitive and conductive contrasts to the real and imaginary parts of the relative permittivity. Measurements are performed over various cells (in their culture medium) after different environmental stimuli in order to induce various biological stresses altering the cell state. Results show that this non-invasive technique, including the developed proper de-embedding post-process, provides the intrinsic dielectric image of single biological cells, which then reveals their biological state.
WE1I-3 :
Correlation Between Morphology Change and Microwave Property During Single-Cell Electroporation
Authors:
Hang Li, Xiao Ma, Xiaotian Du, Yaqing Ning, Xuanhong Cheng, James Hwang
Presenter:
Hang Li, Lehigh University, United States
(8:40 - 9:00 )
Abstract
Traditionally, electroporation of biological cells is tracked by fluo-rescence microscopy with chemical dyes that tend to be slow and invasive. This paper reports, for the first time, electroporation tracked by real-time change in the microwave insertion loss, which is correlated with simultaneous change in cell morphology recorded through an optical microscope. The change in insertion loss was found to be faster and more abrupt than the change in cell morphology, although the latter was still faster than fluores-cence microscopy. Although more work is needed to verify whether these changes correspond to a reversible electroporation or not, the present result suggests that real-time microwave char-acterization can be a faster and less invasive technique for early detection of electroporation. Additionally, although the electro-poration is presently performed on Jurkat human lymphoma cells, it is believed that the same technique can be extended to many other types of cells.
WE1I-4 :
Change in the Dielectric Response of Single Cells Induced by Nutrient Deprivation Over a Wide Frequency Range
Authors:
Samaneh Afshar, Azita Fazelkhah, Elham Salimi, Michael Butler, Douglas Thomson, Greg Bridges
Presenter:
Greg Bridges, Univ. of Manitoba, Canada
(9:00 - 9:20 )
Abstract
We employed dielectrophoresis (DEP) to investigate changes in the dielectric properties of single Chinese hamster ovary (CHO) cells induced by nutrient depletion. CHO cells were concurrently incubated in media with and without glucose and glutamine. After 54 hours, cells were identified as viable and non-viable by trypan-blue exclusion test. The DEP response of single viable and non-viable cells were measured at frequencies over a 100 kHz-300 MHz frequency range using a wide-band DEP cytometer. The results reveal that the induced stress is accompanied by decrease in the ion the content of cytoplasm, decline in cytoplasm permittivity, and decrease in the cell membrane capacitance.
WE1I-5 :
Microwave Noninvasive Blood Glucose Monitoring Sensor: Human Clinical Trial Results
Authors:
Heungjae Choi, Steve Luzio, Beutler Jan, Adrian Porch
Presenter:
Heungjae Choi, Cardiff University, United Kingdom
(9:20 - 9:40 )
Abstract
In this paper, a microwave non-invasive blood glucose monitoring system is designed and its performance in terms of accuracy and repeatability is evaluated by a clinical trial involving 24 human subjects with and without diabetes. Direct comparison with the most accurate bench-top commercial glucose analyzer shows the exceptional accuracy and repeatability of the proposed microwave non-invasive blood glucose monitoring system.
10:10 - 11:50
WE2A:
Maritime Applications of Radar
Chair:
Chris Rodenbeck
Chair organization:
Naval Research Laboratory
Co-chair:
John Pierro
Co-chair organization:
Telephonics Corporation
Location:
312
Abstract:
This session showcases state-of-the-art techniques in radar-based intelligence, surveillance, and reconnaissance (ISR). Topics include recent breakthroughs in imaging techniques for airborne surveillance as well as research and advanced practices in shipboard phased array radars.
Presentations in this
session
WE2A-1 :
Imaging of Dynamic Maritime Scenes Using Multi-Channel SAR
Authors:
Mark Sletten, Steven Menk, John Jakabosky, Thomas Higgins
Presenter:
Mark Sletten, Naval Research Laboratory, United States
(10:10 - 10:30 )
Abstract
This paper describes a unique, multi-channel synthetic aperture radar (MCSAR) designed for maritime remote sensing and surveillance. The X-band system supports two simultaneous transmit channels, excited by arbitrary waveforms, and four simultaneous receive channels, thereby allowing full multiple-input-multiple-output (MIMO) modes. The system antennas are readily reconfigurable to support both along-track and cross-track phase center displacements as well as polarimetric operation. In addition, receive switching is available to provide as many as 32 along-track phase centers. This paper describes the hardware and presents results that illustrate how the along-track phase centers can be used to provide detailed motion measurements across dynamic maritime scenes, using either the Velocity SAR algorithm or a new multi-channel interferometric approach. Imagery recently collected using a combined along-track/cross-track MIMO mode is also presented. The simultaneous velocity and height information provided by this configuration offers new approaches to ocean remote sensing.
WE2A-2 :
Microwave Wireless Coordination Technologies for Coherent Distributed Maritime Radar
Authors:
Robert Schmid, Sean Ellison, Thomas Comberiate, Jason Hodkin, Jeffrey Nanzer
Presenter:
Jeffrey Nanzer, Michigan State Univ., United States
(10:30 - 10:50 )
Abstract
Developments in communications and networking have enabled separate microwave wireless systems to coordinate at increasingly detailed levels, creating a path towards distributed wireless systems. Coherent distributed arrays, where the individual wireless systems synchronize at the level of the RF carrier phase, achieve transmit power gains on the order of the number of platforms squared, and receive gains proportional to the number of platforms. For radar applications, an array with N elements yields an overall system gain of N^3, providing a significant improvement in radar sensitivity. This paper analyzes improved detection capabilities for surface maritime radars operating coherently, and discusses technologies for achieving coherent gain. Recently developed microwave wireless technologies for inter-node coordination in coherent distributed arrays are presented, and future challenges for coherent arrays of maritime radars are discussed.
WE2A-3 :
Synthetic Aperture Radar (SAR) Pattern Discovery Using the Science of Emergence
Authors:
John Pierro, Mark Pass
Presenter:
John Pierro, Telephonics Corporation, United States
(10:50 - 11:10 )
Abstract
All sensors including Synthetic Aperture Radar (SAR) capture vast amounts of critical knowledge that is often contained within raw and processed sensor data, yet is undetectable, obscured or never presented. Through the application of emergence algorithms, patterns, relationships and events that are hidden or hard to find within the data are revealed in rapid to near-real time speeds. Emergence algorithms originally developed to reveal hidden diseases, are extending the capability of SAR sensors to see in effect “below” the ocean surface, revealing hidden signatures of boats, submersibles, aircraft and missiles, and often revealing things no-one expected to discover. After a brief review of SAR theory and representative image products, examples of signatures “hidden” within these SAR images will be presented.
WE2A-4 :
Ship Detection in the Presence of Sea Ice Using RADARSAT-2 Data
Authors:
Chen Liu, Paris Vachon, Nicholas Sandirasegaram
Presenter:
Chen Liu, Defence R&D; Canada, Canada
(11:10 - 11:30 )
Abstract
This paper presents a summary of operational ship detection using RADARSAT-2 imagery, but focuses on the investigation of several approaches to the challenging problem of ship detection in the presence of sea ice using knowledge-based target discrimination methods. Ship detection performance was evaluated using Automatic Identification Systems (AIS) data.
WE2A-5 :
Impact of Off-Shore Wind Turbine on Forward Scattering of Marine Radar Signals
Authors:
Muhammad Bilal Raza, Thomas Fickenscher
Presenter:
Thomas Fickenscher, Helmut Schmidt University, Germany
(11:30 - 11:50 )
Abstract
Offshore wind turbines (WT) can cause wrong estimation of radial speed of nautical traffic by marine radar. The error in measured radial speed due to rotor forward scattering is investigated for S band radar using Fresnel-Kirchhoff diffraction approach. Based on the insight into Fresnel zone shading a scenario with high impact of rotor forward scattering on the Doppler error is selected. Deviation of instantaneous Doppler frequency as well as time-frequency spectrum of the modulation signal within the interval of time on target is investigated.
WE2B:
Tunable Passive Components
Chair:
Holger Maune
Chair organization:
Technische Univ. Darmstadt
Co-chair:
Hualiang Zhang
Co-chair organization:
Univ. of Massachusetts, Lowell
Location:
313A
Abstract:
This session covers tunable passive components over different levels from basic design principles and tunable materials to tunable components such as impedance matching networks, resonators, and phase shifters.
Presentations in this
session
WE2B-1 :
Reconfigurable 1.5–2.5-GHz Phase Shifter With 360-Degree Relative Phase-Shift Range and Reduced Insertion-Loss Variation
Authors:
Pei-Ling Chi, Chia-Ling Huang
Presenter:
Pei-Ling Chi, National Chiao Tung Univ., Taiwan
(10:10 - 10:30 )
Abstract
This paper proposes a varactor-based reflection-type phase shifter that allows for 360-degree relative phase-shift range and reduced insertion-loss variation over the entire frequency tuning range. In particular, a novel and compact reconfigurable 90-degree coupler is devised and it is, theoretically, able to achieve perfect return loss and isolation at each tuning state. Thus, when this 3-dB coupler is terminated with two reflective loads, the phase shifter can operate at a wide range of center frequencies. Moreover, a tunable transformation network is proposed to optimally reduce the insertion-loss variation within the 360-degree continuous phase-shift range for any operational frequency. Experimental results show that the fabricated phase shifter, in a frequency range of 1.5-2.5 GHz, can realize 360-degree relative phase-shift range with greater than 16.5 dB in return loss and less than 3.8 dB in insertion-loss variation.
WE2B-2 :
Modeling and Experimental Measurements of a Tunable Microstrip Resonator Using Plasma Discharges
Authors:
Vincent Laquerbe, Romain Pascaud, Thierry Callegari, Laurent Liard, Olivier Pascal
Presenter:
Vincent Laquerbe, ISAE - Supaero, France
(10:30 - 10:50 )
Abstract
In this paper, we suggest the use of a cold plasma as tunable material inside a microstrip resonant cavity. Plasma dielectric constant can indeed be moved to values below $1$ to tune its resonant frequency. DC plasma analysis were conducted and integrated into classic electromagnetic solvers to investigate tuning abilities. Numerical simulations are consistent with experimental results and make this original tuning techniques viable for high power applications.
WE2B-3 :
Analysis of the Coverage of Tunable Matching Networks With Three Tunable Elements
Authors:
Eyad Arabi, Xingran Jiao, Kevin Morris, Mark Beach
Presenter:
Kevin Morris, Univ. of Bristol, United Kingdom
(10:50 - 11:10 )
Abstract
Tunable matching networks are important for agile RF circuits. To optimally design such networks the overall coverage needs to be determined. In this work, analytical formulas for the coverage area within the Smith chart of a three-element tunable-network are derived. It has been found that up to sixteen circles bound the coverage area. Analytical expressions for the centers and radii of these circles have been derived and verified by circuit simulation as well as measured data. The formulas in this work can be readily integrated into CAD tools, thus provide a valuable tool for the design of tunable circuits. The analyzed network favors the first and fourth quarters while the other quarters can be targeted with the dual of this network.
WE2B-4 :
New Design Method of Impedance Matching Networks Based on Tapered Lines Using Generalized Superellipses
Authors:
Santiago Cogollos, Joaquin Vague, Vicente Boria-Esbert, Jorge Martinez
Presenter:
Santiago Cogollos, Univ. Politècnica de València, Spain
(11:10 - 11:30 )
Abstract
One method used for designing RF and microwave impedance matching networks is based on tapered lines. This paper shows a simple method to design smooth tapers that take into account the dispersion of the line and the required design bandwidth simultaneously. The taper is designed through optimization of very few parameters. As a result, the reflection coefficient of the taper can be optimally adapted to a given specific mask using the prescribed value of physical length. Experimental results are included for validation of the proposed design method.
WE2B-5 :
A VO2-Based 30 GHz Variable Attenuator
Authors:
Junwen Jiang, Ka Wai Wong, Raafat Mansour
Presenter:
Junwen Jiang, Univ. of Waterloo, Canada
(11:30 - 11:50 )
Abstract
This paper presents a millimeter-wave variable attenuator using vanadium dioxide (VO2)-based variable resistors. The thin films VO2 are integrated monolithically with a 0-dB coupler to realize the variable attenuator. A 30 GHz variable attenuator is designed, fabricated, and tested to verify the concept. It exhibits a continu-ous maximum attenuation tuning range of 13 dB, and a return loss of 15 dB over a bandwidth of 5 GHz. The proposed VO2 based variable attenuators have a great potential to be used in a wide range of millimeter-wave applications.
WE2C:
Planar Tunable and Reconfigurable Filter
Chair:
Shamsur Mazumder
Chair organization:
Worcester Polytechnic Institute
Co-chair:
Raafat Mansour
Co-chair organization:
Univ. of Waterloo
Location:
313B
Abstract:
Planar tunable filters are key elements in future wireless broadband communication systems. This session will show the latest advances in multi-pole quasi-elliptic-type filters with tunable center frequency and bandwidth, multi-band filters with controllable passbands and stopbands, and flexible multi-band duplexer architectures.
Presentations in this
session
WE2C-1 :
Fully-Reconfigurable Bandpass Filter With Static Couplings and Intrinsic-Switching Capabilities
Authors:
Roberto Gomez-Garcia, Dimitra Psychogiou, Jose-Maria Munoz-Ferreras
Presenter:
Roberto Gomez-Garcia, Univ. of Alcala, Spain
(10:10 - 10:30 )
Abstract
A transfer-function-adaptive quasi-elliptic-type microwave bandpass filter is presented. The devised fully-reconfigurable filter is based on a resonator-cascade structure with static impedance inverters and only exploits the tuning of its resonating nodes to achieve all its reconfiguration properties. They include center-frequency, bandwidth, and transmission-zero (TZ) control for bandpass-type responses, as well as the intrinsic switching-off (i.e., without RF switches) of the filter. Moreover, it features less in-band insertion-loss levels and improved linearity behavior (specially for narrow-band states) when compared to more-classic bandwidth-tunable filters that use inter-resonator coupling variation. The operational foundations of the engineered fully-reconfigurable filter architecture are theoretically expounded in a coupling-matrix framework. Besides, a tunable three-pole microstrip filter prototype in the range 1.2-1.7 GHz is developed and tested for experimental-demonstration purposes.
WE2C-2 :
Reconfigurable Dual-Band Bandpass Filter With Fully-Switch Operation Using Half-Wavelength Folded-Resonator With Varactor-Loaded Open-Stub
Authors:
Zhen Tian, Huizhen Qian, Xun Luo
Presenter:
Zhen Tian, Univ. of Electronic Science and Technology of China, China
(10:30 - 10:50 )
Abstract
In this paper, a prototype of reconfigurable dualband bandpass filter is proposed. It features independently frequency-controllable quasi-elliptic-type passbands with stopband transmission zeros that can be intrinsically switched on/off. Tunable dual-resonance (i.e., f1 and f2) is introduced in this filter by the half-wavelength (λ/2) folded-resonator with series varactor-loaded open-stub. To verify the operational mechanism above, a tunable dual-band bandpass filter with added passband-switching capability is fabricated and measured. It exhibits frequency-tuning ranges of 38.2% and 33.1% for the dual-band, respectively.
WE2C-3 :
Design of Dual-Mode Dual-Band Bandpass Filter With Independently Tunable Bandwidths and Reconfigurable Filtering Characteristics
Authors:
Ali Gorur, Ceyhun Karpuz, Adnan Gorur
Presenter:
Ceyhun Karpuz, Pamukkale University/TURKEY, Turkey
(10:50 - 11:00 )
Abstract
In this paper, design of a tunable dual-mode dual-band microstrip bandpass filter is presented. The designed filter is constructed by using two nested dual-mode resonators (DMRs) having two patch capacitances located at the lateral arms of the resonators as reference elements. Varactor diodes are used in-stead of perturbation elements in order to excite the degenerate modes. Linear phase and quasi elliptical filtering characteristics can be independently obtained in each passband and the band-widths can also be tuned at both filtering characteristics. For the experimental verification of the designed structure, a dual-mode dual-band microstrip bandpass filter was fabricated and meas-ured. Center frequencies of the passbands were adjusted to 1.78 - 2.65 GHz and 1.83-2.7 GHz for linear phase and quasi elliptical filtering characteristics, respectively. Insertion losses in each passband were observed as better than 3 dB in measurements.
WE2C-4 :
Dual-Band Reconfigurable Bandstop Filter With Independently Controlled Stopbands and Constant Absolute Bandwidths
Authors:
Zhi-Han Chen, Shi-Xuan Zhang, Qing-Xin Chu
Presenter:
Qing-Xin Chu, South China Univ. of Technology, China
(11:00 - 11:10 )
Abstract
This paper presents a novel reconfigurable dual-band bandstop filter with independently controlled stopbands and constant absolute bandwidths (ABWs). The fundamental structure is based on λ/4 varactor-loaded resonators, and the key to constant ABW is choosing proper coupling regions between resonators. Theoretical analysis and calculation are carried out to determine physical parameters of the coupling regions. For demonstration, a second-order dual-band bandstop filter is implemented with 23.6% fractional tuning range of the first stopband from 1.27 to 1.57 GHz and 18.1% of the second stopband from 1.98 to 2.34 GHz, and 3-dB ABWs are 60 ± 3 MHz and 103 ± 5 MHz, respectively.
WE2C-5 :
Design of Balanced Dual-Band Filter With Reconfigurable Center Frequencies
Authors:
Wei Jiang, Tengxing Wang, Yujia Peng, Tian Xia, Guoan Wang
Presenter:
Wei Jiang, Univ. of South Carolina, United States
(11:10 - 11:30 )
Abstract
A balanced two-pole dual-band filter with reconfigurable center frequencies is constructed in this letter for the first time. By incorporating varactor diodes into the doubly short-ended resonator loaded with two short-ended stubs, flexible tuning capabilities are thus enabled. According to stub-loaded theory, by properly selecting positions of two short-ended stubs on the doubly short-ended resonator, the first differential-mode passband center frequency could be independently manipulated, without affecting the other passband. Besides, source-load coupling is introduced to improve the differential-mode frequency selectivity by creating two finite transmission zeros close to each passband. For validation, a tunable balanced dual-band filter is implemented and good agreement between simulation and measurement results indicates the feasibility of proposed design methodology.
WE2C-6 :
Reconfigurable 1.2–3.16-GHz Quad-Channel Diplexer With Compact Size, Constant Absolute Bandwidth, and High Isolation
Authors:
Pei-Ling Chi, Yu-Ting Yan
Presenter:
Pei-Ling Chi, National Chiao Tung Univ., Taiwan
(11:30 - 11:50 )
Abstract
This paper presents a varactor-tuned diplexer with four reconfigurable channel frequencies. To reduce size and enable flexible control of the two passbands at the same output, novel dual-mode resonators are proposed where the even- and odd-mode resonances are, respectively, applied to the higher and lower passbands and can be easily excited at different resonator locations. Moreover, the distributed coupling feed lines are used to generate transmission zeros in the passbands of the other output, leading to high isolation. Experimental results show that the four channels of the fabricated diplexer can be tuned from 1.2 to 1.47 GHz, 1.56 to 1.9 GHz, 2 to 2.45 GHz, and 2.55 to 3.16 GHz with constant absolute bandwidth, greater than 14.4 dB in return loss, and greater than 30 dB in isolation. The diplexer occupies a compact footprint of 0.13 lambda_0 × 0.17 lambda_0, where lambda_0 is the free-space wavelength at 1.2 GHz.
WE2D:
Advanced Power Amplifer Architectures
Chair:
Paul Draxler
Chair organization:
Qualcomm Technologies, Inc.
Co-chair:
Damon Holmes
Co-chair organization:
NXP Semiconductors
Location:
313C
Abstract:
This session covers efficiency enhancing techniques for GaN and CMOS power amplifiers that include load modulation and supply modulation.
Presentations in this
session
WE2D-1 :
A 14 W Wideband Supply-Modulated System With Reverse Buck Converter and Floating-Ground RF Power Amplifier
Authors:
Sophie Paul, Nikolai Wolff, Christophe Delepaut, Václav Valenta, Wolfgang Heinrich, Olof Bengtsson
Presenter:
Sophie Paul, Ferdinand-Braun-Institut, Germany
(10:10 - 10:30 )
Abstract
This paper presents a wideband supply-modulated (SM) system with a floating ground RF power amplifier and a reverse buck topology DC/DC converter. The power amplifier and the reverse buck converter are based on microwave GaN technology. The system is operating at 1620 MHz and 40 V supply and shows 39% overall efficiency at an average output power of 14.6 W for an 8 MHz OFDM modulated signal with 8.6 dB PAPR. The implemented floating-ground RF power amplifier accommodates signals with up to 40 MHz bandwidth. The reverse buck converter switches at 45 MHz with a PAE of 80 – 91% over duty cycles from 40 – 100% equivalent to supply voltages of 16 – 40 V. For the first time a reverse buck topology system enabling GaN switching operation referred to ground is shown in dynamic operation with performance similar to or exceeding classical systems.
WE2D-2 :
Asymmetrically-Driven Current-Based Chireix Class-F Power Amplifier Designed Using an Embedding Device Model
Authors:
Hsiu-Chen Chang, Patrick Roblin, José Alejandro Galaviz-Aguilar, José Cruz Núñez Pérez, Robert Pond, Chenggang Xie, Seok Joo Doo
Presenter:
Hsiu-Chen Chang, Ohio State Univ., United States
(10:30 - 10:50 )
Abstract
Model-based nonlinear embedding is applied for the first time to the design of an asymmetrically-driven class-F Chireix power amplifier. The embedding model is used to determine the optimum load impedances for the fundamental and multi-harmonics required at the package planes such that the two intrinsic transistors operate with a recently reported ideal current-based Chireix combiner. This PA designed using embedding is found to require asymmetrical amplitude and phase modulated input drives to support the targeted equal power input signals at the intrinsic reference planes. The Chireix PA designed exhibits a peak drain efficiency of 79.6 % and power added-efficiency (PAE) over 77/71% around peak power (43/44 dBm) and 55% at 8dB backoff power (36dBm) at 2 GHz measured with a large-signal network analyzer (LSNA). Using a lookup table driver, the PA average drain efficiency is 50% for a 5 MHz W-CDMA signal with 9.3 dB PAPR and -41.5 dBc ACPR.
WE2D-3 :
A Multi-Band CMOS Doherty PA With Tunable Matching Network
Authors:
Paul Draxler, Joonhoi Hur
Presenter:
Paul Draxler, Qualcomm Technologies, Inc., United States
(10:50 - 11:10 )
Abstract
This paper present a multi-band Doherty power amplifier (DPA) implemented in a 0.18um CMOS SOI. In order to enable the multi-band operation, the proposed DPA employs tunable matching networks with digital controls that are set via serial RFFE commands. Using digital pre-distortion (DPD) techniques, the proposed Doherty PA improves efficiency over a wide output power range and over multiple bands of operation between 1.55GHz to 2.3GHz. By utilizing linearizer circuits, tunable matching networks and DPD, the measured PAE with the R99 modulated signal can be as high as 50.1% at 27.8dBm output power while meeting ACP specifications.
WE2D-4 :
A Broadband Reconfigurable Load Modulated Balanced Amplifier (LMBA)
Authors:
Daniel Shepphard, Jeff Powell, Steve Cripps
Presenter:
Daniel Shepphard, Cardiff University, United Kingdom
(11:10 - 11:30 )
Abstract
The Load Modulated Balanced Amplifier (LMBA) uses a control signal (CSP), injected to the normally terminated port at the out-put coupler of a balanced amplifier (BA), to modulate the BA transistor’s impedance. The hybrid circuit demonstrator de-scribed here uses metal-backed multilayer organic substrate and GaN discrete devices. Maximum output power levels above 39.5 dBm are achieved at around P3dB. DE above 60% is seen be-tween 4.5 and 7.5 GHz for power back-off to 7 dB with a fixed CSP of 1 W, and the bias 18 to 28 V
Index Terms—power amplifier (PA), Doherty, load modulation, GaN, balanced amplifier, broadband, octave.
WE2D-5 :
Wide Battery Range Supply Modulator With Reverse Current Protection in Envelope Tracking Operation
Authors:
Ji-Seon Paek, Young-Hwan Choo
Presenter:
Young-Hwan Choo, Samsung Electronics Co., Ltd., Republic of Korea
(11:30 - 11:50 )
Abstract
This paper presents a hybrid supply modulator including Buck-Boost converter, which has wide battery operating range for cellular envelope tracking applications. The output voltage swing is boosted up to 4.5V by an integrated BB converter as supply of linear amplifier. A selective supply voltage of the switching amplifier and a reverse current sensing circuit are employed to prevent the reverse current. The proposed automatic current ratio controller between the linear amplifier and the switching amplifier provides robust performance against the battery voltage variation. The proposed SM supports LTE20MHz envelope signal with 76% efficiency at 800mW output. Adapting the SM to a PA at FDD Band3 with LTE 10MHz, the implemented ET-PA achieves 41.6% of power added efficiency (PAE) at 27dBm PA output power, while achieving -40dBc of E-UTRA ACLR and -137dBm/Hz of RX band noise. The chip is implemented in 0.13μm CMOS process, and the die size is 5.0mm2.
WE2E:
Microwave Signal Processing Components
Chair:
Hiroshi Okazaki
Chair organization:
NTT DoCoMo, Inc.
Co-chair:
Chin-Chun Meng
Co-chair organization:
National Chiao Tung Univ.
Location:
314
Abstract:
Analog signal processing is essential for microwave transmitters and receivers. This session contains of five state-of-the-art microwave signal processing component papers, inculding substrate-transferred up-converter, wideband frequency divider, mixerless vector power modulator, active phase shifter, and wideband frequency divider.
Presentations in this
session
WE2E-1 :
An Active Balanced Up-Converter Module in InP-on-BiCMOS Technology
Authors:
Maruf Hossain, Chafik Meliani, Muhammed Ihab Schukfeh, Nils Weimann, Marco Lisker, Viktor Krozer, Wolfgang Heinrich
Presenter:
Nils Weimann, Ferdinand-Braun-Institut, Germany
(10:10 - 10:30 )
Abstract
This paper presents an active up-converter realized as hetero-integrated module in InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 μm BiCMOS technology and a frequency multiplier followed by double balanced Gilbert mixer cell in 0.8 μm transferred substrate (TS) InP-HBT technology, which is integrated on top of the BiCMOS MMIC. The fundamental VCO operates at 54 GHz. The module achieves a single-sideband (SSB) power up-conversion gain of 2.5 dB and -3.5 dB at 82 GHz and 106 GHz, respectively. It exhibits > 25 GHz IF bandwidth. To the knowledge of the authors, this is the first heterointegrated mm-wave module reported so far.
WE2E-2 :
Wideband GaAs MMIC Diode Frequency Doubler Using 4:1 Broadside Coupled Balun
Authors:
Bert Henderson, Steve Avery, Scott Sacks, Matthew Clements, Anh-Vu Pham
Presenter:
Bert Henderson, Cobham Defense Electronics, United States
(10:30 - 10:50 )
Abstract
A very wideband GaAs MMIC Schottky diode frequency doubler has been designed and tested; it has at least a 10-66 GHz output frequency range with measured conversion loss of 9 to 15 dB. It has -15 to -25 dBc fundamental suppression, -22 to -35 dBc 3rd harmonic suppression, and 15 to 20 dB input return loss. It is singly balanced with a broadside coupled 4:1 transmission line transformer that provides wideband impedance match and input ground return. This appears to be the widest operating bandwidth reported for a GaAs MMIC diode frequency doubler. A family of frequency doublers and mixers has been designed and built that use this new circuit topology.
WE2E-3 :
A Compact Ultra-Wide-Band Frequency Divider With a Locking Range of 12–61 GHz With 0 dBm of Input Power
Authors:
Ali Mostajeran, Mohammad Emadi, Andreia Cathelin, Ehsan Afshari
Presenter:
Ali Mostajeran, Cornell Univ., United States
(10:50 - 11:10 )
Abstract
A compact wide-band mm-wave frequency divider is presented. By utilizing a multi-injection scheme in a fully differential ring oscillator, a wide locking range is achieved. The multi-injection scheme is implemented such that no phase shifter is required for the optimum operation. The chip is fabricated in a 130nm BiCMOS process. The structure is compact with a core area of 0.0016 mm^2. With an input power level of 0dBm a locking range of 12-61GHz (134%) with a division ratio of 2 is achieved. The divider consuming 10.4mW of DC power. To the best of our knowledge, this is the widest locking range among all the mm-wave frequency dividers.
WE2E-4 :
An F-Band Active Phase Shifter in 28 nm CMOS
Authors:
Maxime De Wit, Patrick Reynaert
Presenter:
Maxime De Wit, Katholieke Univ. Leuven, Belgium
(11:10 - 11:30 )
Abstract
In this paper an active phase shifter with high linear frequency dependency is presented for a FSK quadrature demodulator. The circuit is based on a coupled resonator to increase the linear phase shifting range and bandwidth. A capacitor bank, implemented as a digitally controlled artificial dielectric transmission line, is used to realize the phase shifting operation. The design methodology is explained and measurements of an implementation in a 28nm bulk CMOS are given. The design has a phase range of 123 degrees and a phase resolution of 7.2 degrees with a frequency dependent phase difference of 12.2 degrees/GHz. The circuit occupies an active area of 0.01mm² and draws a current of 9.5 mA from a 900mV power supply.
WE2E-5 :
High Speed and Highly Efficient S-Band 20 W Mixerless Vector Power Modulator
Authors:
Abhijeet Dasgupta, Anthony Disserand, Jean Michel Nébus, Audrey Martin, Philippe Bouysse, Pierre Medrel, Raymond Quéré
Presenter:
Abhijeet Dasgupta, Xlim - CNRS- Unversite De Liroges, France
(11:30 - 11:50 )
Abstract
This paper presents a performance evaluation of an original highly efficient and linear GaN-HEMT Vector Power
Modulator (VPM) based on the design of a two-stage saturated variable gain (SVG) amplifier and a multi-level discrete supply modulator. The proposed novel architecture for transforming a digital baseband data stream into an RF Vector modulated power waveform (RF Power DAC) is validated using a specific laboratory test bench. The main objective of this study is to merge signal modulation and DC to RF energy conversion functions into a single and compact GaN based mixer-less circuit. Using high-voltage 50V GaN technology, a 20WS-band vector power modulator having overall average PAE of around 40% is reported. The concept demonstrator is experimentally validated up to 100Msymbols/sec 16-QAM modulation scheme. Functional time alignment with phase and amplitude compensation procedure focusing on measured constellation at 40 Msymbols/sec
enables to reach excellent EVM performances of around 3.2%.
WE2F:
Millimeter-Wave and Terahertz InP/SiGe Technologies
Chair:
Joe Qiu
Chair organization:
Army Research Office
Co-chair:
Edmar Camargo
Co-chair organization:
Camargo Consulting
Location:
315
Abstract:
This session focuses on latest developments on InP and SiGe technologies for millimeter-wave and terahertz applications. The first two papers will focus on power amplifiers, operating from 180 to 265 GHz, and a 670 GHz frequency multiplier chain based on InP technology. The rest of the session will include three papers utilizing SiGe technology for a W-band reflectometer, a 220-310 GHz receiver front-end, and a W-band phased-array receive element.
Presentations in this
session
WE2F-1 :
180–265 GHz, 17–24 dBm Output Power, Broadband, High-Gain Power Amplifiers in InP HBT
Authors:
Zach Griffith, Miguel Urteaga, Petra Rowell
Presenter:
Zach Griffith, Teledyne Scientific and Imaging, United States
(10:10 - 10:30 )
Abstract
Two 250-nm InP HBT power amplifiers operating between 180-265 GHz are reported. A 3-stage, 8-PA cell design demonstrates S21 exceeding 25-dB between 202-257 GHz and 20-dB between 194-265 GHz. Peak output power is 140-mW at 200-GHz with 5.1% PAE. The PA Psat RF power is at least 100-mW from 190-235 GHz, 82-mW from 183-245 GHz, and 50-mW from 183-263 GHz. A 3-stage, 16-PA cell design demonstrates S21 gain exceeding 24-dB between 200-255 GHz and 20-dB between 194-262 GHz. Peak output power is 248-mW at 200-GHz with 4.1% PAE. The PA RF power is at least 200-mW from 195-215 GHz, 170-mW from 190-220 GHz, and 100-mW from 185-255 GHz. Improvements to state-of-the-art include: 13% increase to the maximum PA power above 200-GHz, first reported 200-mW PA with 20-GHz (195-215 GHz) operation, highest power reported above 240-GHz, first demonstrated 100-mW power to 255-GHz, and 70-GHz (16-cell) and 80-GHz (8-cell) PA large-signal bandwidth.
WE2F-2 :
A High Efficiency 670 GHz x36 InP HEMT Multiplier Chain
Authors:
Alexis Zamora, Kevin Leong, Xiaobing Mei, Wayne Yoshida, Mike Lange, Khanh Nguyen, Ben Gorospe, William Deal
Presenter:
Alexis Zamora, Northrop Grumman Corporation, United States
(10:30 - 10:50 )
Abstract
In this letter, the first 670 GHz multiplier chain with integrated buffer amplifiers is reported. The x36 multiplier chain uses a 25 nm InP HEMT MMIC technology with > 1.5 THz fMAX. The chain consists of five packaged MMICs in three split-block waveguide housings with each multiplier incorporating an integrated output buffer. We report an output power of 1.8 mW at 680 GHz when measured at room temperature, with a total DC power consumption of only 1.7 W. This is believed to be the highest DC efficiency reported for a complete multiplier chain at this frequency range.
WE2F-3 :
A 70–110 GHz Single-Chip SiGe Reflectometer With Integrated Local Oscillator Quadrupler
Authors:
Bon-Hyun Ku, Hyunchul Chung, Gabriel Rebeiz
Presenter:
Hyunchul Chung, Univ. of California, San Diego, United States
(10:50 - 11:10 )
Abstract
This paper presents a 70–110 GHz single-chip SiGe reflectometer for one-port vector network analyzer (VNA). Two directional couplers are implemented together with two high-linearity heterodyne receivers on a single chip at 70-110 GHz. In addition, a x4 frequency multiplier chain is also implemented on the same chip. A CPW coupled-line directional is used with a shielded gound plane for improved isolation and directivity. The dynamic range of the receiver is 110–115 dB at 70–110 GHz with 10 dB back-off and 10 Hz resolution bandwidth. The SiGe chip is 5.86 mm2 and consumes 440 mW from a 2 V supply. The chip is mounted on a printed circuit board, and RF and LO signals are applied using probes. A 95 GHz bandpass filter is measured as the device-under-test and the results obtained using the on-chip VNA and a commericial VNA show good agreement over a wide freq range.
WE2F-4 :
A SiGe-Based Wideband 220–310-GHz Subharmonic Receiver Front-End for High Resolution Radar Applications
Authors:
Faisal Ahmed, Muhammad Furqan, Klaus Aufinger, Andreas Stelzer
Presenter:
Faisal Ahmed, Johannes Kepler Univ. Linz, Austria
(11:10 - 11:30 )
Abstract
This paper presents a J-Band (220-325 GHz) subharmonic receiver front-end implemented in 130 nm SiGe BiCMOS . The receiver chip includes integrated LO amplifiers and wideband Marchand baluns at the RF and LO ports. The subharmonic down-conversion mixer is based on a novel topology having a Gilbert cell with stacked switching quads, which are fed by equal-phase local oscillator signals. A very wideband operation is achieved by directly matching the RF input signal to the emitter terminals of the switching quad and not using a transconductance stage. On-wafer measurements of the receiver show a peak conversion gain of 11 dB, a minimum double side band noise figure of around 16 dB and a simulated input compression point of -7 dBm, while consuming a total DC power of 160 mW. The chip demonstrates the highest 3-dB conversion gain bandwidth and compression point for Si-based receivers operating above 200 GHz.
WE2F-5 :
Power-Efficient W-Band (92–98 GHz) Phased-Array Receive Element With Quadrature-Hybrid Based Passive Phase Interpolator
Authors:
Sadia Afroz, Kwang-Jin Koh
Presenter:
Sadia Afroz, Virginia Polytechnic Institute and State Univ., United States
(11:30 - 11:50 )
Abstract
This paper presents a W-band phased array receive (Rx) channel that employs a quadrature-hybrid based power-domain phase interpolator for a power-efficient multi-bit phase synthesis. The Rx channel implemented in 0.13 μm SiGe BiCMOS achieves 137 dB∙Hz dynamic range (DR) with total 18 mW DC power consumption at 94 GHz. This leads to 7.6 dB∙Hz/mW of Rx DR efficiency figure of merit, one of the best power efficiencies reported so far in integrated phased array receivers at mm-Wave frequencies. The measured average gain is 21 dB at 94 GHz and RMS gain variation over 4-bit phase states is < 1.4 dB (3-dB BW: 92-100 GHz). The measured RMS phase error is < 2.5º at 94 GHz. The measured NF is 5.7-6.7 dB for all over the phase states and typical IP-1dB is -31.4 dBm at 94 GHz. The core chip size of the receiver is 1.2×0.58 mm^2.
WE2G:
Radar Sensing for Remote Health Monitoring
Chair:
Yanzhu Zhao
Chair organization:
Medtronic, Inc.
Co-chair:
Changzhi Li
Co-chair organization:
Texas Tech Univ.
Location:
316A
Abstract:
This session explores radar applications for remote monitoring of heartbeat, respiration, and artery pressure, as well as indoor location tracking.
Presentations in this
session
WE2G-1 :
Detection of Vital Signs for Multiple Subjects by Using Self-Injection-Locked Radar and Mutually Injection-Locked Beam Scanning Array
Authors:
Chung-Yi Hsu, Cho-Ying Chuang, Fu-Kang Wang, Tzyy-Sheng Horng, Lih-Tyng Hwang
Presenter:
Chung-Yi Hsu, National Sun Yat-sen Univ., Taiwan
(10:10 - 10:30 )
Abstract
This study combines self-injection-locked (SIL) radar and ILO-based phased array to conduct non-contact vital sign detection on multiple users. For this purpose, multiple injection-locked oscillators (ILOs) are mutual injection locked to each other at a common frequency. By adjusting the tuning voltages of ILOs, the phase shift among ILOs can be controlled, and therefore the beam scanning of the array can be achieved. Moreover, the signals reflected from the chest of the subjects are injected into the ILOs to enter an SIL state for radar operation. In the experiment, the prototype operating in the 2.4-GHz ISM band is utilized to detect the vital signs of three subjects within two meters at different azimuth angles relative to the array.
WE2G-2 :
A Single Radar-Based Vital Sign Monitoring System With Resistance to Large Body Motion
Authors:
Mu-Cyun Tang, Fu-Kang Wang, Tzyy-Sheng Horng
Presenter:
Mu-Cyun Tang, National Sun Yat-sen Univ., Taiwan
(10:30 - 10:50 )
Abstract
This paper presents a self-injection-locked (SIL) radar system to transmit and retransmit (T&RT) a continuous wave to the opposite sides of a human body to detect vital signs with large body movement cancellation. The system can reduce the nonlinear effects caused by body movement on the vital sign signals in the process of cancelling the body motion artifacts. Moreover, a tunable phase shifter is used to improve the limitation of this system due to the environmental clutter. In the experiments, over 95% of the body motion artifacts are removed in real-time monitoring of the vital sign signals when the body moves over a range of more than a wavelength.
WE2G-3 :
Digital IF Phase-Tracking Doppler Radar for Accurate Displacement Measurements and Vital Signs Monitoring
Authors:
Marco Mercuri, Yao-Hong Liu, Alex Young, Tom Torfs, André Bourdoux, Chris Van Hoof
Presenter:
Marco Mercuri, Holst Centre, The Netherlands
(10:50 - 11:10 )
Abstract
A Digital IF Phase-Tracking Doppler radar is presented for accurate displacement measurements and vital signs monitoring. This novel architecture implements a digital Phase-Locked-Loop (PLL) in phase demodulator configuration to extract the phase modulation caused by a moving target without requiring the small-angle approximation condition and solving the null-point issue. This facilitates the accurate measurement of a target’s motion. Experimental results successfully demonstrated the feasibility of the proposed approach.
WE2G-4 :
Arc Shifting Method for Small Displacement Measurement With Quadrature CW Doppler Radar
Authors:
Xiaomeng Gao, Jia Xu, Ashikur Rahman, Victor Lubecke, Olga Boric Lubecke
Presenter:
Xiaomeng Gao, Adnoviv LLC, United States
(11:10 - 11:20 )
Abstract
The accuracy of physiological displacement measurement with CW Doppler radar is affected by the performance of DC offset cancellation. This paper presents an arc shifting approach to improve Levenberg-Marquardt (LM) method that is widely used for such calibration. The LM method becomes less accurate when measured displacement is very small with respect to carrier wavelength. An experiment was conducted in measuring dis-placement of 2 mm and 1 mm using 2.4 GHz quadrature continuous wave (CW) Doppler radar, which demonstrated at least 35% improvement in accuracy when arc shifting method is applied.
WE2G-5 :
A Double Sideband Continuous Wave Radar for Monitoring Carotid Artery Wall Movements
Authors:
Stefano Pisa, Erika Pittella, Emanuele Piuzzi, Orlandino Testa, Renato Cicchetti
Presenter:
Stefano Pisa, Sapienza Univ. of Rome, Italy
(11:20 - 11:30 )
Abstract
A double sideband continuous wave (DSCW) radar for the moni-toring of artery wall movements has been designed and realized. The radar is based on a transceiver, a coherent demodulator and a bow-tie antenna. A feasibility study suggested the 1-3 GHz band as the most suitable for the proposed application. The DSCW radar has been simulated with the microwave office CAD and has been implemented with discrete components. Responses measured on the realized radar are in good agreement with simu-lations. When the radar antenna is placed in contact with a carot-id artery model the radar is able to measure a signal proportional to the artery wall movements.
WE2G-6 :
Short-Range Indoor Localization Using a Hybrid Doppler-UWB System
Authors:
Yao Tang, Jing Wang, Changzhi Li
Presenter:
Changzhi Li, Texas Tech Univ., United States
(11:30 - 11:40 )
Abstract
This paper presents a novel hybrid indoor localization solution that combines a wearable K-band trajectory-tracking Doppler radar with an ultra-wideband (UWB) positioning system. A K-band Doppler radar aided with a three-axis digital gyroscope is used to capture the Doppler frequency and the change in the heading direction, thus constantly tracking the trajectory by integrating speed into position change. In order to remove the error accumulated during the integration process, UWB positioning is adopted in a fixed region. Every time a subject walks into the region that is reliably monitored by the UWB positioning system, the location of the subject and the heading direction are calibrated by the UWB measurement result. Details of the tracking theory is presented. Experiments were carried out to demonstrate the advantage of the proposed Doppler-UWB system for short-range indoor localization.
WE2H:
Resonator Based MW-THz Sensors
Chair:
Lora Schulwitz
Chair organization:
MDA Information Systems
Co-chair:
Kiki Ikossi
Co-chair organization:
IEEE
Location:
316B
Abstract:
Resonator based sensors have been developed for liquid sensing, plasma diagnostics, process monitoring and biomedical applications. These sensors operate at frequencies from microwave to terahertz range. The first paper describes a high sensitivity flow rate detection and permittivity sensing using microfluidics and a multi-ring design. In the second paper, the sensor sensitivity is improved by monitoring higher intermodulation frequencies. The third paper uses a high speed, broadband reflectometer with multipole probes for plasma sensing. The fourth paper describes a substrate integrated waveguide resonator for monitoring curing process in plastics. The final paper presents a THz sensor array with a floating gate design for thin dielectric and/or biofilm detection.
Presentations in this
session
WE2H-1 :
High Sensitive Detection of Flow Rate and Permittivity Through Microfluidics Based on Complementary Split-Ring Resonators
Authors:
Chia-Ming Hsu, Chin-Lung Yang
Presenter:
Chia-Ming Hsu, National Cheng Kung Univ., Taiwan
(10:10 - 10:30 )
Abstract
This paper presents a high sensitive microfluidics flowmeter based on a complementary split-ring resonator (CSRR) sensor which can detect a tiny amount of 1.65 μL unknown fluid using permittivity estimation. The CSRR can detect the spatial distribution of the fluid to calculate the tangent flow rate. A multi-ring with tapped feeding is designed to improve the sensitivity and wide measurable dynamic range and to enhance the high resolution of position. Analysis of the sensor was calculated to estimate the resonance frequency. Microfluidics was fabricated using a glass substrate to achieve a high quality factor sensor. From the measured results, there is an average error of 6% using a single ring Rogers sensor. Moreover, the average error can be reduced to 3.35 % using the glass sensor.
WE2H-2 :
Compelling Impact of Intermodulation Products of Regenerative Active Resonators on Sensitivity
Authors:
Mohammad Abdolrazzaghi, Mojgan Daneshmand
Presenter:
Mohammad Abdolrazzaghi, Univ. of Alberta, Canada
(10:30 - 10:50 )
Abstract
In this paper, a new technique is introduced to enhance
the sensitivity of microwave resonators. Double split ring
resonators are implemented as the core of active resonators. It is
illustrated that regenerative feedback could produce higher order
intermodulation products at the output signal. The variations in
sensing tone are multiplied, which indeed exhibit considerably
higher sensitivities at 3rd, 5th, and 7th IM components compared to
the main resonant frequency. The sensor is also integrated into
wireless platform with ultra-wideband bowtie antennas. Common
fluids such as Toluene, IPA, Methanol, and Water are tested in a
fluidic channel and demonstrated that the sensitivity for
intermodulation products are significantly increased. It is
expected that such behavior reduces the limit of detection and
enables more sensitive measurements.
WE2H-3 :
Fast Broadband Reflectometer for Diagnostics of Plasma Processes Based on Spatially Distributed Multipole Resonance Probes
Authors:
Malte Mallach, Moritz Oberberg, Peter Awakowicz, Thomas Musch
Presenter:
Malte Mallach, Ruhr Univ. Bochum, Germany
(10:50 - 11:10 )
Abstract
For an effective plasma process control, the determination of the process parameters at multiple positions inside the plasma reactor is required. Utilizing the concept of the multipole resonance probe, different parameters of low-pressure plasmas can be derived based on a single broadband measurement of the complex reflection coefficient. In this paper, we present a prototype electronics for fast and accurate reflection measurements of multiple probes based on linear frequency ramps. Its performance has been analyzed by measurements in the frequency range from 0.1 GHz to 5.5 GHz in case of different microwave filters. The results are in very good agreement with those obtained with a commercial vector network analyzer, while the sweep time of 1 ms is significantly shorter. The applicability of the prototype electronics for plasma diagnostics over a wide range of plasma process parameters has been proven by measurements using a double inductively coupled plasma reactor.
WE2H-4 :
Wireless Chipless Cure Monitoring Sensor for Fibre Reinforced Plastics
Authors:
Jannis Groh, Melanie Lipka, Jan Schür, Martin Vossiek
Presenter:
Jannis Groh, Friedrich-Alexander-Univ. Erlangen-Nürnberg, Germany
(11:10 - 11:30 )
Abstract
In this work a novel fully passive chipless wireless cure monitoring sensor for fibre-reinforced plastics (FRP) structures is presented. The sensor is the first system, that enables locally wireless monitoring of the rising cross-linking level of the polymer molecules and the reaction temperature of epoxy resins during the exothermic curing reaction at particular critical locations inside of FRP structures. The temperature and permittivity of the reacting epoxy resin composition is determined by measuring and evaluating the change in resonance frequency for two substrate integrated waveguide (SIW) resonators. The obtained measurement results show an excellent accordance with the data provided by the widely used and established cure monitoring technique differential scanning colorimetry (DSC).
WE2H-5 :
Sensor Array on Structured PET Substrates for Detection of Thin Dielectric Layers at Terahertz Frequencies
Authors:
Matthias Maasch, Mario Mueh, Christian Damm
Presenter:
Matthias Maasch, Technische Univ. Darmstadt, Germany
(11:30 - 11:50 )
Abstract
A method to increase the sensitivity for detection of thin dielectric materials with low thickness below 10µm is presented. By structuring a Polyethylene terephthalate (PET) substrate and introducing a floating electrode in a resonant Jerusalem cross unit cell, the sensing electric field can be confined in the thin material under test (MUT) yielding an increased sensitivity compared to strictly planar resonant structures. Analysis of the achievable sensitivity in terms of resonance frequency shift is performed for MUT thicknesses below 10µm at 0.5THz. Measurements demonstrate the detection of a dielectric layer with a relative permittivity of 2.4 and thickness of 3.3µm.
WE2I:
Advances in Far-Field and Near-Field Techiniques for Wireless Power Transfer
Chair:
Quenton Bonds
Chair organization:
NASA
Co-chair:
Shigeo Kawasaki
Co-chair organization:
Japanese Aerospace Exploration Agency
Location:
316C
Abstract:
Novel passive and active sub-systems for far-field wireless power and data transfer
Presentations in this
session
WE2I-1 :
Ambient Energy Harvesting From Two-Way Talk Radio for On-Body Autonomous Wireless Sensing Network Using Inkjet and 3D Printing
Authors:
Tong-Hong Lin, Jo Bito, Jimmy Hester, John Kimionis, Ryan Bahr, Manos Tentzeris
Presenter:
Tong-Hong Lin, Georgia Institute of Technology, United States
(10:10 - 10:30 )
Abstract
A novel wearable and flexible energy harvesting circuit for simultaneous DC power supply and RFID range extension is proposed. The proposed circuit is more efficient than conventional architectures because both the DC and harmonics generated by the rectifiers are utilized to serve two different functions. The DC power is used to drive DC loads and the harmonic is used to build a carrier emitter to increase the reading range of passive RFID tags. The 3D printing substrate is used to alleviate the limitations imposed by the substrate. Both the energy harvester and the passive tag are fabricated and characterized. The measured DC and the second harmonic, 928 MHz, output power from the proposed rectifier are 17.5 dBm and 1.43 dBm while a two-way talk radio is 9 cm away. The reading range of the custom tag is extended to 17 m with the help of the proposed energy harvester.
WE2I-2 :
Hybrid Rectifier-Receiver Node
Authors:
Mohammad Rajabi, Sofie Pollin, Dominique Schreurs
Presenter:
Mohammad Rajabi, Katholieke Univ. Leuven, Belgium
(10:30 - 10:50 )
Abstract
Simultaneous Wireless Information and Power Transfer (SWIPT) studies the transmission of wireless energy and data in a single RF signal. It becomes interesting when a single receiver chain is able to both convert the RF power to DC power, while at the same time converting the RF signal to BaseBand (BB). A practical method to receive the RF signal and convert the signal to BB while simultaneously harvesting power is proposed. This purpose is possible by utilizing a two-tone signal with a suitable Hybrid Rectifier-Receiver (HRR). The efficiency of the rectifier with different symbols can vary from 39% to 43% considering the power of the first tone as -11 dBm. Therefore, all symbols provide a descent DC output power. The proposed decoding is able to grasp the non-linearity of the diode in order to have a precise estimation of the symbols with different power levels.
WE2I-3 :
Design of Concurrent Dual-Band Rectifier With Harmonic Signal Control
Authors:
Koshi Hamano, Ryuya Tanaka, Satoshi Yoshida, Akihira Miyachi, Kenjiro Nishikawa, Shigeo Kawasaki
Presenter:
Koshi Hamano, Kagoshima University, Japan
(10:50 - 11:00 )
Abstract
This paper proposes and demonstrates a concurrent 2.45GHz/5.8GHz rectifier. The proposed concurrent dual-band rectifier drastically improves its RF-DC conversion efficiency with a harmonic signal control technique. The proposed rectifier em-ploys two key designs. A microstrip spurline notch filter realizes high RF-DC conversion efficiencies at the dual band. The quarter-wave length open stub of the 8.25 GHz at diode cathode effectively terminates the harmonic signal generated by mixing the input signals. The proposed configuration provides the high RF-DC conversion efficiency even when two-tone signals input the rectifier. The fabricated the dual-band rectifier achieves the RF-DC conversion efficiencies of 64.8 %, 62.2 %, and 67.9 % at 2.45 GHz, 5.8 GHz, and their two-tone input signals at 10-dBm input power, respectively.
WE2I-4 :
Wireless Power and Information Transfer in Closed Space Utilizing Frequency Selected Surfaces
Authors:
Masaya Tamura, Daigo Furusu, Ippei Takano
Presenter:
Masaya Tamura, Toyohashi University of Technology, Japan
(11:00 - 11:10 )
Abstract
This paper presents a novel wireless power and information transfer (WPIT) in a closed space utilizing frequency selected surfaces (FSSs). The framework of a greenhouse or a building can be considered as the FSSs. Therefore, the frequency of the power provided to the sensors can be confined inside the frame-work and a communication frequency to the sensor can be transmitted and received from the outside. The concept using a metal mesh box with a shelf is demonstrated. First, it is confirmed that the power transfer frequency can be confined inside the box by S-parameters from port 1 to each received port and the electric field standing wave in the box. Then, it is demonstrated that the power can be transferred to the Line-Of-Sight (LOS) and Non-Line-Of-Sight (NLOS) sensors in the metal mesh box and the sensing data can be received outside the box.
WE2I-5 :
Constant Current Power Amplifier for MHz Magnetic Resonance Wireless Power Transfer Systems
Authors:
Songnan Yang, Bin Xiao, Tiefeng Shi
Presenter:
Bin Xiao, Intel Corp., United States
(11:10 - 11:30 )
Abstract
This paper introduces the concept of constant current power amplifier (PA) for magnetic resonance wireless power transmitters, where the current output of the PA remains almost constant when the load impedance varies. The solution enables the wireless power transfer system to simultaneously support multiple devices and naturally supply the power demanded by receivers without feedback control. In this paper, the design methodology of such PA will be discussed in detail followed by a design example.
WE2I-6 :
Design of a Position-Independent End-to-End Inductive WPT Link for Industrial Dynamic Systems
Authors:
Alex Pacini, Samer Aldhaher, Alessandra Costanzo, Paul Mitcheson
Presenter:
Alessandra Costanzo, Univ. di Bologna, Italy
(11:30 - 11:50 )
Abstract
This paper will present the design of position-independent inductive wireless power transfer (WPT) system for dynamic applications where power is required to be delivered to a moving object on a path, such as industrial sliders and mass movers.
A key feature of the designed inductive WPT system is to inherently maintain a constant dc output voltage, dc output power and dc-to-dc efficiency of the overall system, regardless of the vehicle position.
The system consists of an array of transmitting coils, where each coil is driven by a 6.78 MHz constant amplitude current generated from a load-independent Class EF inverter.
The receiving coil is series tuned and is connected to a Class EF2 rectifier, numerically optimised to produce a DC output voltage which is also independent of the load.
The systems is powered from 70V and GaN and SiC devices are used to implement the Class EF inverter and rectifier.
10:30 - 12:00
SPC:
Student Paper Competition
Chair:
Ryan Gough
Chair organization:
North Star Scientific Corporation
Co-chair:
Ehsan Yavari
Co-chair organization:
Adnoviv LLC
Location:
Overlook Concourse
Presentations in this
session
SPC-1 :
A New Resonance in a Circular Waveguide Cavity Assisted by Anisotropic Metasurfaces
Authors:
Xiaoqiang Li, Mohammad Memarian, Tatsuo Itoh
Presenter:
Xiaoqiang Li, Univ. of California, Los Angeles, United States
SPC-2 :
3D Unconditionally Stable FDTD Modeling of Micromagnetics and Electrodynamics
Authors:
Zhi Yao, Yuanxun Ethan Wang
Presenter:
Zhi Yao, Univ. of California, Los Angeles, United States
SPC-3 :
Multi-Delay Rational Modeling of Lumped-Distributed Systems
Authors:
Maral Zyari, Yves Rolain, Francesco Ferranti, Gerd Vandersteen, Piet Bronders
Presenter:
Maral Zyari, Vrije Universiteit Brussel, Belgium
SPC-4 :
Zero-Bias, 50 dB Dynamic Range, V-Band Power Detector Based on CVD Graphene
Authors:
Mohamed Elsayed, Ahmed Ghareeb, Renato Negra, Mehrdad Shaygan, Zhenxing Wang, Daniel Neumaier
Presenter:
Mohamed Elsayed, RWTH Aachen Univ., Germany
SPC-5 :
RF Harmonic Distortion Modeling in Silicon-Based Substrates Including Non-Equilibrium Carrier Dynamics
Authors:
Martin Rack, Jean-Pierre Raskin
Presenter:
Martin Rack, Université Catholique de Louvain, Belgium
SPC-6 :
Cu/Co Metaconductor Based High Signal Integrity Transmission Lines for Millimeter Wave Applications
Authors:
Seahee Hwangbo, Arian Rahimi, Yong-Kyu Yoon
Presenter:
Seahee Hwangbo, Univ. of Florida, United States
SPC-7 :
A Notch-Feedback Based 4th-Order 2-4 GHz Bandpass Filter System for S-Band Radar Receiver Protection Under the LTE and Radar Coexistence
Authors:
Laya Mohammadi, Kwang-Jin Koh
Presenter:
Laya Mohammadi, Virginia Polytechnic Institute and State Univ., United States
SPC-8 :
Fabrication of a Low Insertion Loss Intrinsically Switchable BAW Filter Based on BST FBARs
Authors:
Milad Zolfagharloo Koohi, Seungku Lee, Amir Mortazawi
Presenter:
Milad Zolfagharloo Koohi, Univ. of Michigan, United States
Abstract
A Low insertion loss (IL) intrinsically switchable bulk acoustic wave (BAW) filter based on the barium strontium titanate (Ba0.5Sr0.5TiO3) thin film bulk acoustic resonators (FBARs) is presented. A 1.5 stage ?-network ladder type switchable BST filter is designed and fabricated. The measured IL of the filter is 2.25 dB at 2.08 GHz center frequency. The 3 dB bandwidth of the filter is 58 MHz, and the minimum rejection level is 12 dB. The filter provides more than 15 dB of isolation between the input and the output ports, in its OFF state. The switchable BST filter presented in this paper provides the lowest IL as compared to the previously reported BST filters.
SPC-9 :
A 19-40 GHz Bi-directional MEMS Tunable All Silicon Evanescent-Mode Cavity Filter
Authors:
ZhengAn Yang, Dimitrios Peroulis
Presenter:
ZhengAn Yang, Purdue Univ., United States
SPC-10 :
0.4-THz Wideband Imaging Transmitter in 65-nm CMOS
Authors:
Zeshan Ahmad, Kenneth O
Presenter:
Zeshan Ahmad, Univ. of Texas at Dallas, United States
SPC-11 :
RF-Input Load Modulated Balanced Amplifier
Authors:
Prathamesh Pednekar, Taylor Barton
Presenter:
Prathamesh Pednekar, Univ. of Colorado, United States
SPC-12 :
A 1.5–88 GHz 19.5 dBm Output Power Triple Stacked HBT InP Distributed Amplifier
Authors:
Duy Nguyen, Alexander Stameroff, Anh-Vu Pham
Presenter:
Duy Nguyen, Univ. of California, Davis, United States
SPC-13 :
High Performance 500-750 GHz RF MEMS Switch
Authors:
Yukang Feng, N. Scott Barker
Presenter:
Yukang Feng, Univ. of Virginia, United States
SPC-14 :
An Integrated 7-Gb/s 60-GHz Communication Link Over Single Conductor Wire Using Sommerfeld Wave Propagation in 65-nm CMOS
Authors:
Kai Zhan, Abhishek Agrawal, Manoj Johnson, Ashwin Ramachandran, Tejasvi Anand, Arun Natarajan
Presenter:
Kai Zhan, Oregon State Univ., United States
SPC-15 :
A DC-90 GHz 4-Vpp Differential Linear Driver in a 0.13 μm SiGe:C BiCMOS Technology for Optical Modulators
Authors:
Pedro Rito, Iria Garcia Lopez, Ahmed Awny, Ahmet Cagri Ulusoy, Dietmar Kissinger
Presenter:
Pedro Rito, Technische Univ. Berlin, Germany
SPC-16 :
Ring Resonator Based Integrated Optical Beam Forming Network With True Time Delay for mmW Communications
Authors:
Yuan Liu, Adam Wichman, Brandon Isaac, Jean Kalkavage, Eric Adles, Thomas Clark, Jonathan Klamkin
Presenter:
Yuan Liu, Univ. of California, Santa Barbara, United States
SPC-17 :
57.5 GHz Bandwidth 4.8 Vpp Swing Linear Modulator Driver for 64 GBaud m-PAM Systems
Authors:
Alireza Zandieh, Sorin Voinigescu, Peter Schvan
Presenter:
Alireza Zandieh, Univ. of Toronto, Canada
SPC-18 :
Dielectric Waveguide Based Multi-Mode Sub-THz Interconnect Channel for High Data-Rate High Bandwidth-Density Planar Chip-to-Chip Communication
Authors:
Bo Yu, Yu Ye, Xuan Ding, Yuhao Liu, Xiaoguang Liu, Jane Gu
Presenter:
Bo Yu, Univ. of California, Davis, United States
SPC-19 :
A 64 GHz 2 Gbps Transmit/Receive Phased-Array Communication Link in SiGe With 300 Meter Coverage
Authors:
Bhaskara Rupakula, Ahmed Nafe, Samet Zihir, Tsu-Wei Lin, Gabriel Rebeiz
Presenter:
Bhaskara Rupakula, Univ. of California, San Diego, United States
SPC-20 :
A D-Band Fully-Differential Quadrature FMCW Radar Transceiver With 11 dBm Output Power and a 3-dB 30-GHz Bandwidth in SiGe BiCMOS
Authors:
Muhammad Furqan, Faisal Ahmed, Klaus Aufinger, Andreas Stelzer
Presenter:
Muhammad Furqan, Johannes Kepler Univ. Linz, Austria
SPC-21 :
Frequency Translational RF Receiver With Time Varying Transmission Lines (TVTL)
Authors:
Qianteng Wu, Xiating Zou, Shihan Qin, Yuanxun Ethan Wang
Presenter:
Qianteng Wu, Univ. of California, Los Angeles, United States
SPC-22 :
A Mm-Wave Ultra-Long-Range Energy-Autonomous Printed RFID-Enabled Van-Atta Wireless Sensor: at the Crossroads of 5G and IoT
Authors:
Jimmy Hester, Manos Tentzeris
Presenter:
Jimmy Hester, Georgia Institute of Technology, United States
SPC-23 :
A Varactor-Tuned Frequency-Reconfigurable Fabric Antenna Embedded in Polymer: Assessment of Suitability for Wearable Applications
Authors:
Roy B. V. B. Simorangkir, Yang Yang, Karu Esselle, Yinliang Diao
Presenter:
Roy B. V. B. Simorangkir, Macquarie Univ., Australia
SPC-24 :
A 30-Gb/s, 2×6-bit I/Q RF-DAC Transmitter With 19.9 dBm in the 20–32-GHz Band
Authors:
Stefan Shopov, Sorin Voinigescu
Presenter:
Stefan Shopov, Univ. of Toronto, Canada
15:40 - 17:00
WE4B:
Novel Large-Signal Model Extraction Techniques
Chair:
Arvind Sharma
Chair organization:
AKSH Research
Co-chair:
Q.J. Zhang
Co-chair organization:
Carleton Univ.
Location:
313A
Abstract:
This session presents the latest advances in large-signal extraction techniques for microwave modelling and circuit simulations. Using device measurements, behavioral models are developed in frequency and time domain. Dynamic large-signal models utilizing charge conservation and neural networks are also included.
Presentations in this
session
WE4B-1 :
Direct Extraction of an Admittance Domain Behavioral Model from Large-Signal Load-Pull Measurements
Authors:
M. Rocio Moure, Michael Casbon, Monica Fernandez-Barciela, Paul Tasker
Presenter:
M. Rocio Moure, Universidad de Vigo, Spain
(15:40 - 16:00 )
Abstract
Look-up table behavioral models (i.e. X-parameters, Cardiff model), input drive |A11| referenced, extracted directly from measurement data, provide an accurate non-linear CAD modeling solution. Typically, formulated, like s-parameters, in the travelling wave (A-B) domain, since these waves can be directly measured and controlled in the high frequency domain. However, if formulated in the admittance (I-V) domain they would provide a more robust MMIC design modelling solution supporting the capability of width and frequency scaling. Presently, no technique has been presented that allows for the extraction of admittance behavioral models directly from load-pull measurements. Previous solutions have all involved complex indirect procedures based on using an extracted A-B domain behavioral model and CAD simulations using voltage sources.
In this paper, a new extraction approach is presented which, by including the influence of variable V11, allows for direct extraction of admittance behavioral models. This approach has been validated on GaN devices.
WE4B-2 :
Time Domain Poly-Harmonic Distortion Models of RF Transistors and its Extraction Using a Hybrid Passive/Active Measurement Setup
Authors:
Amir-Reza Amini, Slim Boumaiza
Presenter:
Amir-Reza Amini, Univ. of Waterloo, Canada
(16:00 - 16:20 )
Abstract
This paper presents a novel behavioral model of RF transistors under periodic stimulus that is mathematically equivalent to frequency domain Poly-Harmonic Distortion (PHD) models but is defined instead in the time domain. Given a fixed fundamental frequency for a periodic stimulus, a time domain PHD (TD-PHD) model that describes this periodic behavior consists of two nonlinear functions, each describing the large-signal response at one of the two ports of the RF transistor. In this model, the response at each port at any given time is a nonlinear time-invariant function of the stimulus at both ports throughout its entire RF period. Using a two-port hybrid passive/active multi-harmonic load-pull measurement setup, a 10W GaN packaged transistor biased in class AB is measured with a Nonlinear Vector Network Analyzer (NVNA). The predictive performance of the extracted model is validated against a power amplifier design that uses this RF transistor.
WE4B-3 :
Conservative Current and Charge Data Extracted from Pulsed S-Parameter Measurements for GaN HEMT PA Design
Authors:
Cristiano Gonçalves, Luis Nunes, Pedro Cabral, Jose Pedro
Presenter:
Cristiano Gonçalves, Instituto De Telecomunicacoes, Portugal
(16:20 - 16:40 )
Abstract
Power Amplifiers can either be designed directly from load-pull data or using CAD software with embedded nonlinear models. Both approaches have advantages and disadvantages and their own range of applicability. Availability of reliable transistor mod-els is usually the main factor to decide which approach to be followed. This paper presents a double pulse S-parameter meas-urement system that enables the extraction of current and charge conservative models of GaN HEMT devices. The obtained charac-teristics were used to predict the transistor load-pull curves which finally led to a RF power amplifier design. The very good agree-ment obtained between the output power and efficiency load-pull predictions, and their corresponding PA measured values, attest the quality of the extracted current and charge data, using the developed system.
WE4B-4 :
Knowledge-Based Neural Network (KBNN) Modeling of HBT Junction Temperature and Thermal Resistance From Electrical Measurements
Authors:
Masaya Iwamoto, Jianjun Xu, Wenfan Zhou, David Root
Presenter:
Masaya Iwamoto, Keysight Technologies, United States
(16:40 - 17:00 )
Abstract
A knowledge-based neural network (KBNN) modeling and analysis method is presented for determining junction temperature, Tj, and thermal resistance, Rth, from simple electrical measurements of HBTs. The method retains sound physical principles of classical approaches but provides significant additional practical benefits for modeling and prediction based on the mathematical properties of neural networks when endowed with additional a priori “knowledge”. The method returns explicit, infinitely differentiable approximations for Tj and Rth as functions of ambient temperature, Tamb, and power dissipation, Pdiss. The method enables reliable predictions of Tj over a very wide range (e.g. 25C to 250C) by working with any complete set of experimental variables. The method also provides an automatically trained, measurement-based DC electro-thermal transistor model as a function of bias and temperature.
WE4C:
Novel Substrate-Integrated Waveguide (SIW) Filters
Chair:
Christopher Galbraith
Chair organization:
Massachusetts Institute of Technology, Lincoln Laboratory
Co-chair:
Masud Hannan
Co-chair organization:
Intel Corp.
Location:
313B
Abstract:
This session will cover recent advances in the design of substrate-integrated waveguide filters. In particular, the authors will report on mode-composite multimode filters, dual-band SIW filters and self-packaged lumped-element filters in substrate-integrated suspended-line technology.
Presentations in this
session
WE4C-1 :
Mode Composite Waveguide Filter With Dual-Mode Operation
Authors:
Jiapin Guo, Ke Wu
Presenter:
Jiapin Guo, École Polytechnique de Montréal, Canada
(15:40 - 16:00 )
Abstract
In this work, a mode composite waveguide (MCW) based dual-mode filter is proposed and studied. This filter uses the inner waveguide of MCW as the input and output feedings, and the outer waveguide of MCW as the dual-mode resonator. The two degenerate modes in the outer waveguide resonator are used for the dual-mode filter operation, which generates two transmission poles and one finite transmission zero. The two transmission poles are used to control the filter bandwidth, and the finite transmission zero is used to improve the out of band selectivity. The generated finite transmission zero can be placed at either the left or right vicinity of the passband by adjusting the feeding parameters. Two types of dual-mode filter are designed at 10 GHz with 2% fractional bandwidth. Type I filter exhibits a transmission zero at the left vicinity of the passband while type II filter exhibits one at the right.
WE4C-2 :
A Novel Dual-Band Bandpass Filter Using a Single Perturbed Substrate Integrated Waveguide Cavity
Authors:
Mingkang Li, Chang Chen, Weidong Chen, Lingyun Zhou, Hualiang Zhang
Presenter:
Chang Chen, Univ. of Science and Technology of China, China
(16:00 - 16:20 )
Abstract
A novel dual-band bandpass filter based on the multimodes in a single perturbed substrate integrated waveguide (SIW) cavity is proposed. Metallized via-holes are introduced to serve as perturbations to shift and control the first four resonant modes and divide them into two groups. The perturbed TE101 and TE102 modes lead to the first passband while the perturbed TE201 and TE202 modes constitute the second passband. Furthermore, by moving the via-holes along the diagonal line of the SIW cavity, the first passband can be tuned independently while the second passband is fixed. A prototype filter operating at 9.22 GHz and 11.30 GHz is designed and fabricated. Measured and simulated results are presented to validate the proposed design concept of the dual-band filter.
WE4C-3 :
Substrate Integrated Waveguide Dual-Passband Filters With Flexibly Allocated Center Frequencies and Bandwidths
Authors:
Kang Zhou, Chunxia Zhou, Wen Wu
Presenter:
Kang Zhou, Nanjing University of Science and Technology, China
(16:20 - 16:40 )
Abstract
A kind of substrate integrated waveguide (SIW) dual-band bandpass filters (DB-BPF) with flexibly allocated center frequencies (CFs) and fractional bandwidths (FBWs) is presented based on TE101 and TE201 modes in SIW rectangular cavities. Emphasis is placed on filters design to simultaneously realize the external quality factors Qe and coupling coefficients Mij required for both passbands by determining proper offset positions and coupling structural dimensions of the feeding ports and coupling windows, respectively. Consequently, both the CFs and FBWs of the two passbands can be specified and allocated freely over wide ranges.
WE4C-4 :
An Ultra-Wide Stopband Self-Packaged Quasi-Lumped-Element Low Pass Filter Based on Substrate Integrated Suspended Line Technology
Authors:
Zonglin Ma, Kaixue Ma, Shouxian Mou
Presenter:
Zonglin Ma, Univ. of Electronic Science and Technology of China, China
(16:40 - 17:00 )
Abstract
This paper presents an ultra-wide stopband selfpackaged quasi-lumped-element low pass filter (LPF) based on substrate integrated suspended line (SISL) technology. Interdigital capacitor and spiral inductor are utilized in the 1GHz quasilumped-element LPF. The measured results shows that the proposed LPF can achieve a wide stopband from 1.36 fc to 24 fc with 20dB stopband rejection. And the filter has advantages of self-packaging, low loss, compact size, and low cost by using SISL Technology.
WE4D:
Advances in Terahertz Technologies
Chair:
Bill Deal
Chair organization:
Northrop Grumman Corporation
Co-chair:
Paul Khanna
Co-chair organization:
National Instruments Corp.
Location:
313C
Abstract:
This session presents novel active and passive devices and measurement techniques for terahertz frequency bands. As commercial attention turns to applications above 100 GHz, new devices, packaging techniques, and characterization methods are needed for these bands. This session will review application of MEMS and VO2 switches as well as low loss passive couplers, transitions, and probes.
Presentations in this
session
WE4D-1 :
A Micromachined Differential Probe for On-Wafer Measurements in the WM-1295 (140–220 GHz) Band
Authors:
Chunhu Zhang, Matthew Bauwens, Linli Xie, Michael Cyberey, Nicolas Barker, Robert Weikle, Arthur Lichtenberger
Presenter:
Chunhu Zhang, Univ. of Virginia, United States
(15:40 - 16:00 )
Abstract
This paper describes the first-reported development of a micromachined differential probe for direct on-wafer measurements operating in the WM-1295 (140—220 GHz) frequency band. Design and fabrication of the probe, which includes integrated circuitry for converting the input of a single-ended vector network analyzer to differential mode, are described and an on-wafer calibration procedure for extracting the probe mixed-mode scattering parameters.is detailed
WE4D-2 :
A Broadband THz Waveguide-to-Suspended Stripline Loop-Probe Transition
Authors:
Johanna Hanning, Vladimir Drakinskiy, Peter Sobis, Tomas Bryllert, Jan Stake
Presenter:
Johanna Hanning, Chalmers Univ. of Technology, Sweden
(16:00 - 16:10 )
Abstract
We present a novel waveguide-to-suspended stripline loop-probe transition operating over the entire WR-1.0 waveguide band. The loop probe is designed for broadband response with simu-lated RL > 15 dB, and has an integrated DC return path, which can also be extended for biasing. The measured insertion loss for a back-to-back configuration is 1 – 2 dB in almost the entire frequency range of 750 – 1100 GHz.
WE4D-3 :
High Performance 500–750 GHz RF MEMS Switch
Authors:
Yukang Feng, N. Scott Barker
Presenter:
Yukang Feng, Univ. of Virginia, United States
(16:10 - 16:30 )
Abstract
In this work, a 500-750 GHz (WM-380) RF micro- electromechanical (MEMS) DC contact switch is realized and reported. This switch is integrated with a coplanar waveguide (CPW), which is designed with a characteristic impedance of 50 Ω. The structure is fabricated on high resistivity silicon with top isolation silicon dioxide layer of 100 nm. Under a threshold voltage of 60 V, electrostatic force actuates the switch into “ON” state. Switch design and its calibration are discussed. Measurements show the insertion loss to be 0.7-2.7 dB in “ON” state with return loss greater than 12 dB. In the “OFF” state, isolation is better than 18 dB across the band.
WE4D-4 :
VO2 Switch Based Submillimeter-Wave Phase Shifters
Authors:
Chris Hillman, Bob Ma, Philip Stupar, Zach Griffith
Presenter:
Chris Hillman, Teledyne Scientific, United States
(16:30 - 16:50 )
Abstract
A monolithic 3-bit phase shifter has been fabricated and demonstrates broadband and low loss performance from 220GHz to 240GHz. The phase shifter utilizes an ultra-low loss vanadium dioxide switch for phase state control. The design uses low-pass π-filter networks as phase shift elements for 45, 90 and 180 degree bits. This phase shifter’s mean insertion loss of 7.6 dB is 3dB lower than any other passive phase shifter we could identify in literature and comparable to the best active vector-sum devices. The RMS phase error is a competitive 6.8degrees at 230GHz and averages only 8dB over the band from 220 – 240GHz. This phase shifter’s complete circuit footprint is < 0.1mm2 easily fitting within (λ/2)2 ~ 0.4mm2 array spacing. We can find no passive phase shifter with comparable performance or compactness.
WE4D-5 :
A Monolithic Low-Cost 3-dB Directional Coupler Based on Silicon Image Guide (SIG) Technology at Millimeter-Wave Band
Authors:
Aidin Taeb, Mohamed Basha, Suren Gigoyan, Gholamreza Rafi, Sujeet Chaudhuri, Safieddin Safavi-Naeini
Presenter:
Aidin Taeb, Univ. of Waterloo, Canada
(16:50 - 17:00 )
Abstract
A low-cost and low-loss directional coupler implemented in the Silicon Image Guide (SIG) platform for high-end sub-millimeter-wave and THz integrated systems is proposed. A novel idea of supporting beams is used for facilitating the high precision fabrication of such a monolithic structure. A 3-dB coupler is designed and simulated for working at the centre frequency of 150 GHz. The simulated average phase unbalance of the coupler within the range of 145-155 GHz is less than 1 degree.
The proposed coupler is fabricated using a fast and mask-free laser micro-machining process. The measured insertion loss and 1-dB bandwidth of the coupler are <0.4 dB and 8 GHz, respectively.
WE4E:
Doherty Power Amplifiers for Wireless Communications
Chair:
Monte Watanabe
Chair organization:
Northrop Grumman Aerospace Systems
Co-chair:
Joseph Staudinger
Co-chair organization:
NXP Semiconductors
Location:
314
Abstract:
This session describes recent advances in Doherty power amplifiers for wireless communications. New references are showing Gallium Nitride Doherty power amplifiers for base transceiver applications with high-power and wide-band performance over the wireless communication band ranging from 1.7 to 2.7 GHz. Other efforts focus on improving the instantaneous bandwidth and linearizaed performance by using in-package matching techniques. Also, a technique for efficiency enhancement at power back-off is presented in another contribution.
Presentations in this
session
WE4E-1 :
85 W Pavg, 500 W Peak Power, 1.8–2.2 GHz Wideband GaN Doherty Power Amplifier
Authors:
Rached Hajji, Luis Hernandez, Gary Burgin, Jeff Gengler, Thomas Landon
Presenter:
Rached Hajji, QORVO, Inc., United States
(15:40 - 16:00 )
Abstract
This paper presents a wideband Doherty Power Amplifier
(DPA) using 0.25um GaN on SiC High-Voltage technology
suitable for Band-1 and Band-3 LTE Basestation applications
This DPA puts out 85W Pavg and 500W peak power at the
Doherty 50-ohm output, with relatively flat 45-49% average efficiency
across 20% frequency bandwidth. To the knowledge of the
authors, this is a first 2-Way DPA demonstration exhibiting such
wideband high power levels while maintaining good efficiency and
linearized performance, within 20% bandwidth. This work allows the use of one set of power amplifier discretes for multi-band operation (1.8-2.2GHz) of transmit systems, reducing cost and hardware complexity.
WE4E-2 :
A 200 Watt Broadband Continuous Mode Doherty Power Amplifier for Base-Station Applications
Authors:
Xiaofan Chen, Wenhua Chen, Zhenghe Feng, Fadhel Ghannouchi
Presenter:
Xiaofan Chen, Tsinghua Univ., China
(16:00 - 16:20 )
Abstract
This paper presents a high-power Continuous-mode Doherty Power Amplifier (C-DPA) technique for base-station applications. By utilizing de-embedded model of active devices and allowing the two transistors modulating each other at harmonics frequencies, the proposed C-DPA exhibits improved power, efficiency and bandwidth. Based on the proposed technique, a demonstrating 200 Watt C-DPA is designed over 1.7-2.7 GHz. According to the measured results, over the 1GHz band, the designed DPA generates 52.7-54.3 dBm power at saturation and exhibits 40%-50.2% drain efficiency at -6dB power back-off. To the best of the authors’ knowledge, this is the state-of-the-art performance of high-power broadband DPAs for base-station applications. Furthermore, using a 10MHz, 7.5dB PAPR LTE signal, the fabricated DPA is measured and linearized over the full-band, verifying its ability of being linearized.
WE4E-3 :
An Integrated RF Match and Baseband Termination Supporting 395 MHz Instantaneous Bandwidth for High Power Amplifier Applications
Authors:
Ning Zhu, Roy Mclaren, Damon Holmes, John Holt, Peter Rashev, Jeffrey Jones
Presenter:
Ning Zhu, NXP Semiconductors, United States
(16:20 - 16:40 )
Abstract
An integrated passive device (IPD) supporting both RF and baseband impedance matching is proposed that is directly suita-ble for high power, multiband amplifier applications. The im-pedance matching method and design techniques are discussed. As proof-of-concept, we present an LDMOS Doherty power amplifier (PA) with 400 W peak power using the proposed IPD to demonstrate 20% fractional RF bandwidth with low base-band impedance. Measurements of the Doherty PA with digital pre-distortion system indicate that the amplifier achieves over 40% drain efficiency at average Pout of 48.5 dBm with over 15 dB of gain during concurrent transmission of 3GPP Band 3 & Band 66 from 1.805 – 2.2 GHz while meeting ACPR of -53 dBc. The results represent over 2 times improvement of instantane-ous bandwidth capability over prior work and enables for the first time 395 MHz instantaneous bandwidth capability for high power downlink cellular infrastructure communication systems.
WE4E-4 :
An Extended Symmetrical Doherty Power Amplifier With High Efficiency Over a Wide Power Range
Authors:
Mohammad Darwish, Anh-Vu Pham
Presenter:
Mohammad Darwish, Univ. of California, Davis, United States
(16:40 - 17:00 )
Abstract
We propose an extended range Doherty power amplifier (DPA) to achieve high efficiency at 9-dB power back-off (PBO) using a novel loading impedance range. The proposed loading impedance range enables the auxiliary transistor to deliver more current so that symmetric devices can be used in the DPA and results in a compact and low loss output combining circuit. A 20-Watt DPA using Gallium nitride high electron mobility transistors (GaN HEMTs) at 3.5 GHz has been developed to demonstrate the concept. Measurements show power added efficiency (PAE) of 69% at 42.9 dBm saturation output power, PAE of 55% at 9-dB PBO, and gain of 12 dB. We believe our proposed DPA has the highest 9-dB PBO PAE of 55% among reported GaN DPA’s.
WE4F:
Recent Advancements in III-V Integrated Circuits for Communications from S-Band to Sub-mm Waves
Chair:
Nicholas Kolias
Chair organization:
Raytheon Company
Co-chair:
Reynold Kagiwada
Co-chair organization:
Northrop Grumman Corporation
Location:
315
Abstract:
This session highlights the latest advancements in GaN, mHEMT, and InGaAs MOSFET integrated circuits. Highlights include a fail-safe limiter, broadband communication amplifiers extending to sub-mm waves, and W-Band LNAs.
Presentations in this
session
WE4F-1 :
A Failsafe High Power Transmit-Receive Switch/Limiter MMIC
Authors:
Charles Campbell
Presenter:
Charles Campbell, QORVO, Inc., United States
(15:40 - 16:00 )
Abstract
The design and performance of a high power Gallium Nitride (GaN) transmit-receive frontend MMIC is presented. The circuit is passive, does not require any external bias voltage and is mono-lithically compatible with GaN MMIC process technology. High power Tx port signals are directed to the ANT port and the Rx port is isolated and therefore protected from damage. Low power signals input to the ANT port are directed to the Rx port with minimal insertion loss. If the ANT port signal power exceeds some threshold, the circuit starts to limit the power to the Rx port protecting it from damage. Since the circuit does not require an external control voltage it will function normally providing fail-safe operation in the event of lost or disconnected bias. The MMIC results presented here demonstrate 0.7dB of transmit path loss, 1.0dB of receive path loss and 50W power handling over a 3.0-3.6GHz bandwidth.
WE4F-2 :
First Demonstration of Broadband W-Band and D-Band GaN MMICs for Next Generation Communication Systems
Authors:
Moyer Harris, Hasan Sharifi, David Brown, Miroslav Micovic, Ara Kurdoghlian, Robert Nagele
Presenter:
Ara Kurdoghlian, Hughes Research Lab., United States
(16:00 - 16:20 )
Abstract
High-performing GaN MMICs that can cover broadband appli-cations at W and D-Band have been fabricated and tested. A five stage 60-105 GHz LNA has >23 dB of gain across the band with <4dB NF, and P1dB of >20dBm at 84GHz and a six stage D-Band LNA has 25 dB of gain with ~6dB projected NF from 110-170 GHz. A double balanced resistive FET mixer has -11 to -15 dB of conversion loss from 74–94 GHz. To our knowledge, these are the first reported GaN MMICs with high broadband gain at these frequencies.
WE4F-3 :
Investigation of Direct-Coupled Amplifier Topologies for Wireless Communication Systems Using Normally-On mHEMT Technology
Authors:
Laurenz John, Thomas Merkle, Christian Friesicke, Axel Tessmann, Arnulf Leuther, Matthias Ohlrogge, Roger Lozar, Michael Schlechtweg, Thomas Zwick
Presenter:
Matthias Ohlrogge, Fraunhofer IAF, Germany
(16:20 - 16:40 )
Abstract
This paper presents direct-coupled DC-50 GHz two-stage baseband amplifier topologies realized in a 35 nm gate-length InAlAs/InGaAs mHEMT technology. These are key components of future single-chip receiver MMICs for point-to-point communication systems. Three interstage coupling approaches are investigated: resistive coupling, a diode-level-shifter and a Kukielka amplifier. The Kukielka amplifier features the best performance in terms of gain-bandwidth-product and represents the state of the art for this topology. The investigated two-stage amplifier circuits achieve up to 21 dB gain and a 3 dB bandwidth of 53 GHz, requiring less than 300x300 µm² chip area. The presented level-shifter circuit has a 3 dB bandwidth of up to 150 GHz and an insertion loss of less than 3.5 dB.
WE4F-4 :
80 nm InGaAs MOSFET W-Band Low Noise Amplifier
Authors:
Arnulf Leuther, Thomas Merkle, Matthias Ohlrogge, Frank Bernhardt, Lukas Czornomaz, Axel Tessmann
Presenter:
Arnulf Leuther, Fraunhofer IAF, Germany
(16:40 - 17:00 )
Abstract
An 80 nm InGaAs MOSFET W-band MMIC low noise amplifier (LNA) is presented. The technology uses 4" GaAs substrates with a molecular beam epitaxy (MBE) grown metamorphic buffer to realize the InGaAs/InAlAs device heterostructure. For a 2 x 20 µm gate width transistor a transit frequency fT of 226 GHz was extrapolated. A two-stage cascode configuration is used for the W-band LNA which was processed in MOSFET and HEMT technology for comparison. The MOSFET LNA achieves a linear gain of more than 17 dB in the frequency range from 75 to 105 GHz with an associated noise figure between 3.2 and 4.4 dB. To the best of the authors knowledge, this is the first reported InGaAs MOSFET millimeter-wave MMIC.
WE4G:
Signal Sources and Noise Suppression Techniques
Chair:
Deukhyoun Heo
Chair organization:
Washington State Univ.
Co-chair:
Brad Nelson
Co-chair organization:
QORVO, Inc.
Location:
316A
Abstract:
This session presents high efficiency, low phase noise and noise suppression design techniques in the millimeter wave signal generation area. It includes CMOS based VCO's, InGaP/GaAs HBT VCO's and synthesizer papers.
Presentations in this
session
WE4G-1 :
A Bang-Bang PD Based Phase Noise Filter With 23 dB Noise Suppression
Authors:
Tongning Hu, Shilei Hao, Jane Gu, Bo Yu, Jinbo Li, Yu Ye
Presenter:
Tongning Hu, Univ. of California, Davis, United States
(15:40 - 16:00 )
Abstract
In this paper, we present a bang-bang phase detector (BBPD) and delay-line frequency discriminator (FD) based phase noise filter (PNF). With a larger phase detection gain, the BBPD based PNF enhances the phase noise cancellation and sensitivity by suppressing the charge pump (CP) noise. A time-amplifier (TA) and a 5 × voting machine are introduced together with the modified sense-amplifier-flip-flop (SAFF) to minimize the BBPD random noise. At 1 MHz offset, the maximum phase noise suppression is 23 dB and best phase noise sensitivity is -120.2 dBc/Hz and. Its phase noise suppression offset frequency is from 100 kHz to 8 MHz with 100 MHz input frequency range. The circuit is fabricated in a 65 nm CMOS technology and dissipates 98 mW power.
WE4G-2 :
Current Reuse Triple-Band Signal Source for Multi-Band Wireless Network-on-Chip
Authors:
Joseph Baylon, Sheikh Nijam Ali, Pawan Agarwal, Srinivasan Gopal, Deukhyoun Heo
Presenter:
Joseph Baylon, Washington State Univ., United States
(16:00 - 16:20 )
Abstract
A current reuse triple-band signal generator is proposed which simultaneously generates a first, second, and third harmonic output signal from a 26.5-30.2 GHz fundamental voltage con-trolled oscillator (VCO). Transformer-based Gm boosting and passive 2nd harmonic extraction is proposed to achieve a good performance with exceptionally low power. A low-voltage modi-fied Gilbert cell mixer generates the third harmonic while re-quiring minimal voltage overhead, facilitating an efficient cur-rent reuse topology. The fabricated signal generation circuit consumes 8 mW of power and achieves a 13% tuning range and a measured phase noise of -121 dBc/Hz at 10 MHz offset. The pro-posed signal source demonstrates best-in-class performance among multi-band signal sources.
WE4G-3 :
A Low Phase Noise Quadrature Phase Oscillator with Frequency Pulling Suppression Technique
Authors:
Ping-Yi Wang, Guan-Yu Su, Yin-Cheng Chang, Da-Chiang Chang, Shawn S. H. Hsu
Presenter:
Ping-Yi Wang, National Tsing Hua Univ., Taiwan
(16:20 - 16:40 )
Abstract
high performance X-band quadrature phase voltage-controlled oscillator (QVCO) for direct-conversion transceivers in 0.18-m CMOS is demonstrated. By using the novel 8-shaped transformer together with the current-reuse topology, the proposed design can be operated at reduced dc power consumption while maintaining low phase noise with suppressed Electro-Magnetic Compatibility (EMC) issues. Consuming a dc bias current of only 5.45 mA with the supply voltage of 1.8V, the QVCO has a frequency tuning range of 570 MHz, a phase noise of -121.12 dBc/Hz at 1MHz offset frequency away from the 10.48 GHz carrier frequency, and an FoM up to 191.9 dBc/Hz
WE4G-4 :
A Chip Set of Low Phase Noise MMIC VCOs at C, X and Ku Band in InGaP-GaAs HBT Technology for Satellite Telecommunications
Authors:
Corrado Florian, Sara D'Angelo, Davide Resca, Francesco Scappaviva
Presenter:
Corrado Florian, Univ. di Bologna, Italy
(16:40 - 17:00 )
Abstract
This work presents the design of three low-phase-noise monolithic voltage controlled oscillators with a 2-µm InGaP-GaAs HBT technology for wideband satellite communications at C, X and Ku frequency bands. A large-signal design approach for the minimization of low-frequency noise up-conversion in conjunction with the optimization of the varactor-tuned integrated resonator were adopted for the minimization of phase noise generation. The C-band circuit implements a fundamental-frequency topology, whereas the X- and Ku- band oscillators are designed with a push-push configuration. The VCOs feature integrated output buffers for higher output power and improved load pulling. In the push-push VCOs, an integrated differential amplifier is used to provide an f0/2 prescaler output. Measured VCO frequency range of 3.31-4.17 GHz, 7.38-8.88 GHz, 10-12.28 GHz have been achieved, with maximum phase noise levels at 1 MHz offset from the carrier of -129 dBc/Hz, -124 dBc/Hz and -122 dBc/Hz respectively.
WE4H:
Practical Considerations in Wireless Systems
Chair:
Steven Rosenau
Chair organization:
SSL
Co-chair:
Fred Schindler
Co-chair organization:
QORVO, Inc.
Location:
316B
Abstract:
The papers in this session cover the technical challenges as described by experimental measurements of communication systems in a wide variety of applications ranging from cellular to satellite.
Presentations in this
session
WE4H-1 :
Ultra-Small Aperture Terminals for SATCOM on-the-Move Applications
Authors:
Julio Navarro
Presenter:
Julio Navarro, MTT-S, United States
(15:40 - 16:00 )
Abstract
This articles describes a K/Ka-band active phased array antenna (PAA) component and mobile terminal technology development project to demonstrate dual-beam K-band Receive, switchable beam Ka-band transmit PAAs and miniaturized frequency converter technologies. The results support wideband satellite Comm. On-The-Move (COTM) requirements of future mobile vehicle construction. The prototype mechanically augmented phased array (MAPA) antenna terminal uses a combination of mechanical and electronic steering to provide full-hemispherical coverage with single phased array panels suitable for installation onto a variety of existing mobile platforms. The USAT MAPA terminal provides simultaneous (LHCP/RHCP) dual-beam K-band receive capabilities as well as a switchable (LHCP/RHCP) Ka-band transmit beam to significantly increase the data-rate capacity over a comparable mechanically gimbaled dish antenna. The USAT MAPA terminal can simultaneously receive from two sources and transmit to a third point with less than a 3dB axial ratio over the wide Field-of-View (FOV).
WE4H-2 :
3GPP ACLR Measurements for Millimeter-Wave Wireless Backhaul Link With Self-Heterodyning Mixing
Authors:
Simone Maier, Heinz Schlesinger, Stefan Woerner, Dieter Ferling, Xin Yu, Gerhard Luz, Andreas Pascht
Presenter:
Simone Maier, Bell Labs, Germany
(16:00 - 16:20 )
Abstract
This paper analyzes the signal quality achievable with a novel system architecture for low-power small cell remote units with integrated millimeter-wave wireless backhaul. The data signal on the backhaul link uses the same 3GPP compliant signal as with the access link serving the users. In contrast to existing systems, the small cell remote unit (RU) only (RU) consists of a simple frequency conversion from backhaul to access frequencies based on the self-heterodyning mixing concept with suppressed local oscillator (LO) signal. Therefore, it omits the LO source and greatly reduces power consumption and hardware complexity. Its sufficient linearity and phase noise performance at 60GHz was proven with measurements of an LTE signal easily meeting the 3GPP ACLR and EVM requirements, even with varying LO suppression levels on the backhaul link. Moreover, the required frequency stability of the access signal is demonstrated even when using a very unstable LO source.
WE4H-3 :
Full-Duplex Channel Measurement and Analysis Based on High Dynamic Channel Sounding System
Authors:
Wen Zhu, Zhimeng Zhong, Hongwei Kong
Presenter:
Wen Zhu, Keysight Technologies, China
(16:20 - 16:40 )
Abstract
The full duplex channel, which describes the reflection interfer-ence signals in full duplex system, needs to be measured to achieve more precision SIC for full duplex system. Full duplex channel includes both strong leakage interference and weak re-flection interference signals, which requires very high dynamic range in channel measurement. In this paper, we designed a high dynamic channel sounding system for the full duplex channel measurement which can provide above 60dB measurement dy-namic range, we also performed outdoor full duplex channel measurement at 2.6GHz based on the proposed channel sounding system. The full duplex channel parameters distribution analysis was also performed based on the channel measurement results.
WE4H-4 :
k-Space Tomography for Spatial-Spectral Monitoring in Cellular Networks
Authors:
Dennis Prather, Janusz Murakowski, Garrett Schneider, Shouyuan Shi, Dylan Ross
Presenter:
Dennis Prather, Univ. of Delaware, United States
(16:40 - 17:00 )
Abstract
A technique for the spatial-spectral analysis of the cellular environment by performing a near real-time imaging of k-space is presented. The system uses a random spatial-spectral dispersion map from an optically-upconverted RF phased array receiver and tomographic reconstruction techniques to recover the cellular source scene. While spatial dispersion is inherent to phased array antennas, temporal dispersion is introduced by randomizing the fiber length for each up-converted antenna ele-ment, which contains the received RF signal as a sideband on an optical carrier. Each fiber is routed into a common fiber bundle where the filtered RF-sidebands are launched into free space, expand and overlap. The resulting complex superposition pro-duces an interference pattern unique to a given RF source loca-tion and frequency, which is used to recover the spatial direction and frequency of each source in the cellular environment. We present the theory of operation and experimental results of this approach.
WE4I:
Predistortion and Reconfigurability for 5G Systems
Chair:
Vittorio Camarchia
Chair organization:
Politecnico di Torino
Co-chair:
Kate Remley
Co-chair organization:
National Institute of Standards and Technology
Location:
316C
Abstract:
For 5G technologies, multiple-element array and MIMO systems will be of fundamental importance. Linearity and self-interference control will be key features. At the same time, reconfigurability will increase the flexibility of the new systems. This session presents digital predistortion applied to arrays, cancellation in full-duplex systems, reconfigurable power amplifiers with tunable coupling coefficients, and broadband combiners in antennas for mmWave applications.
Presentations in this
session
WE4I-1 :
Digital Predistortion of Amplitude Varying Phased Array Utilising Over-the-Air Combining
Authors:
Nuutti Tervo, Janne Aikio, Tommi Tuovinen, Timo Rahkonen, Aarno Pärssinen
Presenter:
Nuutti Tervo, Univ. of Oulu, Finland
(15:40 - 16:00 )
Abstract
In this paper, we propose a simple polynomial linearisation technique for nonlinear phased arrays including amplitude control. Due to the large number of antennas and thus power amplifiers in the array, it is inefficient to linearise each power amplifier individually. Therefore, it is demonstrated that the array can be linearised over-the-air using single polynomial. The simulations show that the linearisation is achieved by first linearising the higher driven PAs at the precompression region and then cancelling the compression by the heavily expanding lower driven PAs. The proposed approach offers an alternative way of re-thinking the concept of array linearisation over multiple PAs.
WE4I-2 :
A Two-Stage Analog Cancellation Architecture for Self-Interference Suppression in Full-Duplex Communications
Authors:
Xin Quan, Ying Liu, Wensheng Pan, Youxi Tang, Kai Kang
Presenter:
Ying Liu, Univ. of Electronic Science and Technology of China, China
(16:00 - 16:20 )
Abstract
In this paper, a two-stage analog interference cancellation architecture is proposed for the prevailing full-duplex communication systems. Within the architecture, a one-tap analog cancelling circuit is first deployed to reconstruct and cancel the strong leakage self-interference (SI) component to yield a residual multi-path SI of reduced dynamic range. Subsequently, an auxiliary transmit chain is deployed to particularly reconstruct and cancel the residual multi-path SI components, to further improve the overall analog cancellation performance. Experimental results have validated the superior analog cancellation performance of this architecture on wide-band long-term evolution signals.
WE4I-3 :
Analysis of Broadband Power Combiners and Coupled Antenna With Stochastic Load Matching in a Random Field for mm-Wave Applications
Authors:
Sidina Wane, Damienne Bajon, Thanh VInh Dinh, Dominique Lesenechal, Johannes Russer, Peter Russer
Presenter:
Sidina Wane, NXP Semiconductors, France
(16:20 - 16:40 )
Abstract
In this paper, we present design and experimental verification of integrated power combiners and closely coupled on-chip antenna. Several design variants are proposed for assessing effects of impedance matching on antenna correlation coefficients as function of frequency. Broadband equivalent circuit models accounting for radiation effects are extracted for proper random EM-Fields-Circuit co-simulation. Perspectives for Built-In-Self-Test implementing real-time tuning of impedance matching are drawn for 5G/mm-Wave MIMO and Phased-Array applications.
WE4I-4 :
Reconfigurable High Efficiency Power Amplifier With Tunable Coupling Coefficient Based Transformer for 5G Applications
Authors:
Sheikh Nijam Ali, Pawan Agarwal, Joe Baylon, Deukhyoun Heo
Presenter:
Sheikh Nijam Ali, Washington State Univ., United States
(16:40 - 17:00 )
Abstract
A reconfigurable high efficiency power amplifier with tunable coupling coefficient based transformer is presented for 5G Applications. The proposed tunable transformer facilitates to cope with increased gate-drain capacitance (Cgd) in deep submicron CMOS power amplifier (PA) design at mm-Wave frequencies. This technique allows neutralization of Cgd in a common-source PA while maximizing output power and efficiency. To reconfigure the PA between 24 and 28 GHz, a low-loss reconfigurable matching topology is presented using a switched substrate-shield inductor. Using the proposed techniques, a single-stage reconfigurable class-AB PA is demonstrated in 65 nm CMOS, achieving 42.6% maximum power added efficiency (PAEmax), 14.7 dBm maximum output power (Po,max) at 24 GHz (ISM band) and 40.1% PAEmax, 14.4 dBm Po,max at 28 GHz (5G). The PA occupies a core area of 0.11 mm2 only.
15:40 - 17:10
WEIF1:
Interactive Forum - Four
Chair:
George Zhang
Chair organization:
Univ. of Hawaii
Co-chair:
Anthony Combs
Co-chair organization:
Univ. of Hawaii
Location:
Overlook Concourse
Presentations in this
session
WEIF1-1 :
Generalized Langevin Theory for Josephson Parametric Amplification
Authors:
Waldemar Kaiser, Michael Haider, Johannes Russer, Peter Russer, Christian Jirauschek
Presenter:
Michael Haider, Technische Univ. München, Germany
Abstract
Superconducting quantum circuits exhibit an extraordinary potential for future electronic applications. Superconducting devices based on Josephson junctions allow mixing and parametric amplification up to the terahertz range under low energy consumption and ultra-low noise. Josephson parametric amplifiers show the possibility of reaching quantum limited amplification. Thus, dissipation is highly important and needs to be taken into account. In this work, we investigate the dynamic behaviour of a negative-resistance, dissipative DC biased Josephson parametric amplifier. The Langevin theory is used for modeling of the dissipation in the resonant circuits by coupling the system to a heat bath. We investigate the system dynamics neglecting memory effects. We numerically evaluate the time evolution of the signal and noise energies. Applying a phenomenological multi-photon coupling approach, a correction of the Markovian assumption is achieved providing the expected saturation in the dynamical behaviour of the circuit.
WEIF1-2 :
Generation of Multi-Gigabit/s OFDM Signals at W-Band With a Graphene FET MMIC Mixer
Authors:
Omid Habibpour, Dhecha Nopchinda, Zhongxia Simon He, Niklas Rorsman, Herbert Zirath
Presenter:
Dhecha Nopchinda, Chalmers Univ. of Technology, Sweden
Abstract
This paper presents multi-Gigabit/s Orthogonal Frequency Divi-sion Multiplexing (OFDM) signal generation at w-band by using a resistive mixer based on a graphene field effect transistor. The OFDM signals consist of 64 subcarriers each carrying a quadra-ture-phase-shift-keying (QPSK) symbol. The results show that a bit error rate of 10^(-4) is achievable for 8 Gbps data rate.
WEIF1-3 :
W-Band Phase Shifter Based on Optimized Optically Controlled Carbon Nanotube Layer
Authors:
Dmitry Lyubchenko, Ilya Anoshkin, Irina Nefedova, Joachim Oberhammer, Antti Räisänen
Presenter:
Dmitry Lyubchenko, Kungliga Tekniska Högskolan, Sweden
Abstract
Phase shifting in a dielectric rod waveguide (DRW), loaded with carbon nanotube (CNT) layers of different thickness, was studied experimentally under light illumination in 75-110GHz frequency range. The dependence of efficiency of the phase shifting, in terms of phase shift per light intensity and millimeter-wave attenuation, on the optical transparency of the CNT-layer is investigated. Phase shifter of 15° with less than 0.1dB additional signal loss in the W-band was achieved for a 95% transparent CNT layer at 23mW/mm2 light intensity of a tungsten halogen lamp (main radiation spectrum is 550-680 nm). The overall insertion loss of the phase shifter including two DRW tapering sections serving as transitions to rectangular waveguides are 3 to 5dB in W-band, of which less than 2dB is attributed to CNT-DRW section. This comprises, for the first time, an optically-controlled CNT-based DRW phase shifter with phase shift and insertion loss levels suitable for practical applications.
WEIF1-4 :
Dual-Mode Filters in Equilateral Triangular Waveguides With Wide Spurious-Free Response
Authors:
Ana Morán-López, Juan Córcoles, Jorge Ruiz-Cruz, José Montejo-Garai, Jesús Rebollar
Presenter:
Ana Morán-López, Universidad Autónoma de Madrid, Spain
Abstract
Modern satellite communication systems require high performance filters with great compactness and low mass. These features are traditionally offered by dual mode filters. During the last decades, several designs have been implemented using waveguides with different cross-sections such as rectangular, circular or elliptical, where different coupling structures have been proposed. In this paper, a novel implementation using the equilateral triangular waveguide is introduced. One main advantage of this proposed structure is its wide spurious-free window in comparison with other dual-mode implementations. Moreover, the modes of the equilateral waveguide are also analytic, and the full-wave design can be carried out with the efficient Mode-Matching technique. Thus, this type of implementation proves to be as suitable as other structures with analytical waveguides (i.e. the classic rectangular structures), having at the same time a wide spurious-free window response.
WEIF1-5 :
High-Isolation Diplexer on Triple-Mode Cavity Filters
Authors:
Lin Jing-yu, Wong Sai-Wai, Zhu Lei
Presenter:
Lin Jing-yu, South China Univ. of Technology, China
Abstract
This paper proposes a diplexer based on two triplemode cavity filters. Each of filters is realized in a single rectangular waveguide cavity with the operation of triple resonant modes. These triple modes are classified as a TM mode and a pair of TE modes, which are excited by two short circuited ended along the x-, y-, z-orientations in a cavity. By simultaneously creating three transmission zeros in both the upper band of the lower channel and lower band of the higher channel. Finally, a diplexer prototype operating in the 2.55/2.66 GHz bands for Long-Term Evolution (LTE) application is fabricated by using the silver plated aluminum technology for demonstration. Experimental and simulated results are presented, both validating the predicted results of the proposed diplexer.
WEIF1-6 :
V-Band Rotary Joint With Low Loss Over Wide Bandwidth
Authors:
Hermann Sequeira, Perry Malouf
Presenter:
Hermann Sequeira, Johns Hopkins Univ., United States
Abstract
We describe a rotary joint that offers < 0.5 dB insertion loss within a 13% bandwidth about 60 GHz. The joint is comprised of two mode converters arranged back-to-back that transform the dominant TE10 mode in standard WR-15 rectangular waveguide to TE01 mode in circular cylindrical waveguide at which rotation occurs. We present data that shows that wideband performance depends on stringent quality control in manufacturing the part.
WEIF1-7 :
A Fully Integrated High Gain 85–106 GHz Packaged Receiver Module in CMOS 65 nm for FMCW Radar
Authors:
Samuel Jameson, Aviv Marks, Eran Socher
Presenter:
Eran Socher, Tel Aviv University, Israel
Abstract
In this paper a fully integrated W-band receiver for FMCW radar in CMOS 65 nm technology is presented. The receiver topology is based on a 6 stages LNA, a Gilbert cell mixer, an IF buffer and an LO chain based on a x9 multiplying chain with a power amplifier. The receiver has a record peak conversion gain of +46 dB at 91 GHz and has a minimum NF of 7 dB for an IF of 40 MHz. A conversion gain higher than +30 dB was measured between 88 and 96 GHz. The circuit occupies an area of 1 mm2 and has a total DC power consumption of 300 mW. The chip is packaged in a module using wire-bonding with transition to WR10 and LO and IF filters.
WEIF1-8 :
A Monostatic Coded Aperture Reflectometer for Imaging at Submillimeter-Wavelengths
Authors:
Michael Eller, Noah Sauber, Alexander Arsenovic, Souheil Nadri, Linli Xie, Robert Weikle
Presenter:
Michael Eller, Univ. of Virginia, United States
Abstract
A prototype imaging reflectometer based on the coded aperture technique and operating in the WR-1.5 (500—750 GHz) frequency band is described. Masks for the coded aperture system are realized through optical modulation of the conductivity of a high-resistivity silicon wafer. A network model representation of the imaging system is developed and applied to measuring beam maps of a submillimeter-wave diagonal horn antenna. The approach presented in this paper is amenable to network calibration methods and error-correction techniques, which provide distinct advantages compared to other recently reported millimeter-wave coded aperture systems based on bistatic scalar measurement approaches.
WEIF1-9 :
A Fully Integrated Injection-Locked Picosecond Pulse Receiver for 0.29 psrms-Jitter Wireless Clock Synchronization in 65 nm CMOS
Authors:
Babak Jamali, Aydin Babakhani
Presenter:
Babak Jamali, Rice Univ., United States
Abstract
This paper reports a picosecond pulse receiver based on a three-stage divide-by-8 injection-locked frequency divider. The receiver operates for pulses with center frequency of 77 GHz and locks its output to the 9.6-GHz repetition rate with an effective locking range of 142 MHz. This receiver, which consumes 42 mW dc power, is used to demonstrate wireless clock synchronization with a 0.29ps RMS timing jitter and indicates an estimated sensitivity of −65.5 dBm in detecting picosecond pulses.
WEIF1-10 :
Application of the Phase Coherence Method for Imaging With Sparse Multistatic Line Arrays
Authors:
Bessem Baccouche, Wolfgang Sauer-Greff, Ralph Urbansky, Fabian Friederich
Presenter:
Bessem Baccouche, Fraunhofer ITWM, Germany
Abstract
Sparse multistatic array concepts can offer cost-effective millimeter-wave and terahertz imaging solutions, while greatly reducing the system complexity.
Despite the high design flexibility of sparse arrays the imaging quality could strongly be limited by unavoidable violations of the Nyquist-Shannon sampling criterion, which lead to significant grating lobes artifacts.
Within this contribution we investigate the application of the phase coherence method to enhance the imaging quality.
Simulations show a significant increase of the integrated side lobe ratio along the array's axis, which holds for undersampled effective apertures. Experimental results, which have been achieved with a factor 4 undersampled sparse line array operating in the W-band, demonstrate the potential of this approach not only in reducing grating lobes but also side lobes and clutter.
WEIF1-11 :
A Low-Cost, Orientation-Insensitive Microwave Water-Cut Sensor Printed on a Pipe Surface
Authors:
Muhammad Akram Karimi, Muhammad Arsalan, Atif Shamim
Presenter:
Muhammad Akram Karimi, King Abdullah Univ. of Science and Technology, Saudi Arabia
Abstract
This paper presents a pipe conformable water fraction sensor, which is independent of geometric distribution of oil and water inside the pipe. The sensor is based upon a modified helical stub based resonator implemented directly on the pipe’s outer surface and whose resonance frequency decreases by increasing the water fraction in oil. The E-fields have been made to distribute uniformly across the cross section of the pipe, despite having narrow and curved ground plane. It makes the sensor’s reading dependent only on the water fraction and not on the mixture distribution inside the pipe. That is why, the presented design does not require any flow conditioner to homogenize the oil/water mixture unlike many commercial water fraction sensors. Realized using low cost screen and 3D printing, presented sensor has been characterized in an industrial flow loop under different flow patterns and flow rates with a full range accuracy of ±1%.
WEIF1-12 :
A Cost-Effective Wearable Vital-Sign Sensor With Self-Oscillating Active Antenna Based on Envelope Detection Technique
Authors:
Chao-Hsiung Tseng, Jyun-Kai Huang, Li-Te Yu, Chih-Lin Chang
Presenter:
Chao-Hsiung Tseng, National Taiwan Univ. of Science and Technology, Taiwan
Abstract
A wearable vital-sign sensor with the self-oscillating active antenna is proposed in this paper. The active antenna is employed to radiate the radio-frequency signal and receive the injection signal reflected from the moving human chest. Since the envelope detection technique is adopted to demodulate the vital signs from the modulated output of the active antenna, the circuit complexity, cost, and circuit size can be significantly reduced. The developed sensor is experimentally validated to detect the respiration and heartbeat rate of a human adult. The measured heartbeat rate agrees that obtained by the finger pulse oximeter very well.
WEIF1-13 :
N-ZERO Direct Conversion Wireless Sensor Based on Six-Port Structures
Authors:
Rashid Mirzavand Boroujeni, Mohammad Mahdi Honari Kalateh, Pedram Mousavi
Presenter:
Rashid Mirzavand Boroujeni, Univ. of Alberta, Canada
Abstract
A class of near to zero power (N-Zero) microwave sensor architecture is presented based on the direct conversion principle to eliminate data processing and provide ultra-low-power sensor nodes. Using a six-port circuit as the modulator, the sensing data are up-converted directly to a microwave frequency and sent by an antenna. In this circuit, there are one input, one output, and four loading ports. The same capacitive resonator are used as loads but two of them sense variation of the sample under test in a sensing area and the others are in the free space as references. At the receiver, a six-port circuit is used to down-convert and extract the sensing data.
As an example for validation, a system of wireless sensing is fabricated at 2.45 GHz and the test results are presented for various samples.
WEIF1-14 :
Flexible Coupled Microwave Ring Resonators for Contactless Microbead Assisted Volatile Organic Compound Detection
Authors:
Zahra Abbasi, Mohammad Hossein Zarifi, Pooya Shariaty, Zaher Hashisho, Mojgan Daneshmand
Presenter:
Zahra Abbasi, Univ. of Alberta, Canada
Abstract
new microwave contactless sensor is presented to monitor the level of volatile organic compound in a dry gas stream. The platform is based on two passive ring resonators, which are magnetically coupled where the sensing tag is implemented on a flexible RF substrate. The wireless coupling between the reader and the tag, enables contactless as well as sensitive sensing. The microwave sensor operates at 4 GHz while the distance between the reader and the tag can be extended up to 1.5 cm. To increase the sensitivity of the sensor, VOC polymeric adsorbent beads are used inside a cylindrical quartz reactor and the tag monitors the adsorption on the V503 bed directly. Various concentrations of Methyl Ethyl Ketone and Cyclohexane in the range of 250 to 1000 ppm are detected distinctively. The sensor demonstrates a sensitivity of 40 kHz/ppm for MEK and 2 kHz/ppm for Cyclohexane operating as a real-time detector.
WEIF1-15 :
Single-Chip Dynamically Time-Frequency Multiplexed Phase- and Self-Injection-Locked CMOS Vital-Sign Sensor
Authors:
Ping-Hsun Wu
Presenter:
Ping-Hsun Wu, Industrial Technology Research Institute, Taiwan
Abstract
A single-chip Doppler radar sensor based on a phase- and self-injection-locked oscillator is designed for non-contact vital-sign acquisition. It is fabricated in TSMC 65nm CMOS with a minia-turized core size of 0.31mm × 0.37mm. Dymanically time-frequency multiplexed operation ensures null point avoidance, electromagnetic interference rejection and RF emission reduction. Vital signs within 1 m range can be successfully identified with single antenna and maximum 10 mW power consumption in continuous mode without any RF amplification.
WEIF1-16 :
Microwave Transmission Approach for Dynamic Dielectric Detection at Brain Functional Site
Authors:
Xing Jiang, Zhe Geng
Presenter:
Lin Peng, Univ. of Chinese Academy of Sciences, China
Abstract
A new brain neuronal activities detection approach using microwave technology is presented. Here, the basic principles of the detection method that brain neuronal activities can be sensed by an EM wave propagating through the dynamic dielectric at the brain functional site are discussed first. To prove the approach, two brain tissue models with one and two functional sites were built respectively for simulation study. The simulation results show that the phase of transmission coefficient-S21 will change with the dynamic permittivity in functional sites and the frequencies(3Hz, 5Hz, 8Hz, and 11Hz) of the permittivity variation associated with the brain neuronal activities can be extracted from the phase variation of S21. Furthermore, an experiment on EM wave detection of rat brain neuronal activities was conducted. The measured data validate the feasibility and effectiveness of the detection method.
WEIF1-17 :
Impacts of RF Shimming on MRI Induced Heating for Implantable MedicalLead in 3T Birdcage Coil
Authors:
Qi Zeng, Qingyan Wang, Jianfeng Zheng, Wolfgang Kainz, Ji Chen
Presenter:
Ji Chen, Univ. of Houston, United States
Abstract
Transfer function method was utilized to evaluate the RF-induced heating of implantable devices with 137 implanted lead trajectories under different shimming conditions. Two different shimming conditions were studied. One is to optimize the homogeneity of the ??+ field magnitude in human heart region, and second one is to estimate the possible worst-case of the RF field induced heating. All the results were normalized to 2W/kg average whole body specific absorption rate (SAR) and Q-Matrices formalism method was used to improve the SAR calculation efficiency.
The average temperature rise at the lead tip under Quadrature excitation is 6.28°C while the homogeneous condition leads to 11.7°C. The absolutely worst-case RF induced heating is at 61.6°C. As the results suggested, significant impacts on RF-induced heating due to RF shimming were observed.
WEIF1-18 :
Wirelessly Powered Implantable Pacemaker With On-Chip Antenna
Authors:
Yuxiang Sun, Brian Greet, David Burkland, Mathews John, Mehdi Razavi, Aydin Babakhani
Presenter:
Yuxiang Sun, Rice Univ., United States
Abstract
We present a battery-less mm-sized wirelessly powered pacemaker microchip with on-chip antenna in 180nm CMOS process. The microchip harvests RF radiation from an external source in the X-band frequency, with the size of 4mm by 1mm. The in-vivo experiment is demonstrated successfully on a live pig heart. The pacemaker can be wirelessly powered with a distance of 2cm. It generates a stimulation pulse signal with a voltage magnitude of 1.3V. The wireless pacing testing was successfully demonstrated by changing the heart rhythm frequency from 1.67Hz to 2.87Hz.
WEIF1-19 :
Development of a Reconfigurable Low Cost Multi-Mode Radar System for Contactless Vital Signs Detection
Authors:
Farhan Quaiyum, Lingyun Ren, Sabikun Nahar, Farnaz Foroughian, Aly Fathy
Presenter:
Farhan Quaiyum, Univ. of Tennessee, United States
Abstract
In this work, we propose a Multi-Mode Radar (MMR) with reconfigurable center frequency incorporating the functions of both CW and SFCW Doppler radars rather than using separate platforms for each radar type. This MMR is controlled by a microcontroller and it can be used in an indoor environment for tracking more than one subject, human gait analysis and for long-range vital signs detection. The radar was built and experimentally utilized for both close range and long range heart rates monitoring.
WEIF1-20 :
A Single-Chip Wireless Microelectrode Array for Neural Recording and Stimulation
Authors:
Alice Yi-Szu Jou, Hengying Shan, Hossein Pajouhi, Ming-Shiuan Tsai, Shabnam Ghotbi, Qiuyu Wu, Alexander A. Chubykin, Saeed Mohammadi
Presenter:
Hengying Shan, Purdue Univ., United States
Abstract
A single-chip ultra low power wireless microelectrode array (MEA) for neural recording and stimulation is implemented. The device is fabricated in GlobalFoundries 45 nm CMOS SOI technology and post processed without using additional lithography to achieve a thin fully functional and flexible system. The design occupies a volume of 0.008 mm3 and integrates a 2D MEA with 9 active neural field potential channels and a miniaturized antenna for wireless powering and communication. The system consumes 15 μW of power per channel at a sensing rate of 26 kS/s. System measurement and in-vitro tests with live mouse brain cells have been conducted.
WEIF1-21 :
A Hybrid Computer Vision and Wi-Fi Doppler Radar System for Capturing the 3-D Hand Gesture Trajectory With a Smartphone
Authors:
Mu-Cyun Tang, Chien-Lun Chen, Min-Hui Lin, Fu-Kang Wang, Chia-Hung Yeh, Tzyy-Sheng Horng
Presenter:
Mu-Cyun Tang, National Sun Yat-sen Univ., Taiwan
Abstract
This paper presents a 3-D hand gesture capture technique using the 2D camera and Wi-Fi connection signals of a smartphone. The motion detection principle of this technique involves combining the algorithm of pixel-based computer vision and the extraction of Doppler shift from the reflected Wi-Fi signals. Moreover, a joint displacement calibration procedure is proposed to transform the camera pixel coordinates to the radar space coordinates. This technique has the advantages of lower computation resources and power consumption than the current counterparts and requires no extra cameras and RF transmission sources when used on a smartphone.
Thursday 8 June
8:00 - 9:40
TH1A:
Advanced Network and Materials Analysis Topics
Chair:
Andrea Ferrero
Chair organization:
Keysight Technologies
Co-chair:
Jon Martens
Co-chair organization:
Anritsu
Location:
312
Abstract:
This session features five papers covering exciting, innovative methods and techniques in the areas of network analysis and materials measurement. A new single-chip network analyzer and an improved VNA-based time domain approach are discussed as is a better calibration scheme for liquids measurement. The materials aspect of this session carries into a new passive intermodulation measurement analysis approach. An improved waveguide mounting technique for chip measurements at sub-THz frequencies is also presented with application to both network and materials analysis.
Presentations in this
session
TH1A-1 :
Enhanced Vector Network Analyzer Time Domain Measurement Using Normalized Superimposition
Authors:
Stephen Pennock, Omar Abdul-Latif
Presenter:
Stephen Pennock, University of Bath, United Kingdom
(8:00 - 8:20 )
Abstract
VNA measurement of scattering parameters in the frequency domain is common practice, and time domain analysis can find the impulse and/or step responses of the DUT. A problem with this is the introduction of unwanted side lobes that are caused when applying band-limited Fourier Transform. One technique to reduce side lobes is windowing, but this has a broadening effect on the main-lobe. The Spatially Variant Apodization and superimposition (SI) techniques have been seen to address these issues in the past. In this paper an enhancement to the SI technique through a normalisation process is investigated. The NSI technique is seen to preserve the position, amplitude and phase of the main lobe responses from a DUT in both simulated and measured data, reducing side lobes and confusion in the time domain representation of the DUT. Hence a better approximation to the ideal impulse response is achieved.
TH1A-2 :
A 0.01–26 GHz Single-Chip SiGe Reflectometer for Two-Port Vector Network Analyzers
Authors:
Hyunchul Chung, Qian Ma, Mustafa Sayginer, Gabriel Rebeiz
Presenter:
Hyunchul Chung, Univ. of California, San Diego, United States
(8:20 - 8:40 )
Abstract
This paper presents a single-chip 0.01–26 GHz reflectometer for two-port VNAs. The reflectometer consists of a bridge coupler integrated with two heterodyne receivers. For wideband operation, a resistive bridge coupler is used with a directivity of 33 dB. Also, a high-linearity receiver is designed so as to accommodate 10 dBm RF input power to the reflectometer. The SiGe chip is 1.8 mm2 and consumes 640 mW. The dynamic range of the chip is 127+-±2dB with an IF RBW of 10 Hz. Measurements of several DUTs with a 0.01-26GHz VNA shows excellent agreement with a commercial VNA. Two-port measurements also show an S21 dynamic range of 80 dB, limited by the measurement setup. To our best knowledge, this is the first demonstration of a VNA operating from 10 MHz to mm-wave frequencies with the capability of measuring -80 dB of S21 as well as minimal magnitude and phase difference.
TH1A-3 :
Elliptical Alignment Holes Enabling Accurate Direct Assembly of Microchips to Standard Waveguide Flanges at Sub-THz Frequencies
Authors:
James Campion, Umer Shah, Joachim Oberhammer
Presenter:
James Campion, KTH Royal Institute of Technology, Sweden
(8:40 - 9:00 )
Abstract
Current waveguide flanges do not allow for accurate fitting of Silicon microchips, due to the mechanical tolerances of the flange alignment pins and the brittle nature of Silicon, requiring oversized chip alignment holes to fit the worst-case tolerances, resulting in significant misalignment error for sub-THz frequencies. This paper presents, for the first time, a new method for aligning micromachined chips to standard flanges with accuracy better than the flange tolerances, by combining a circular and an elliptical alignment hole on the chip. Monte Carlo analysis predicts the reduction of the mechanical assembly margin by a factor of 7, reducing the potential misalignment from 46 to 8.5 µm for a probability of fitting of 99.5%. Micromachined chips using either circular or elliptical alignment holes were fabricated and measured. A reduction in the standard deviation of the reflection coefficient by a factor of up to 20 was observed from 200 random measurements.
TH1A-4 :
All Liquid Based Calibration Scheme for Microwave Dielectrometry
Authors:
Sönke Schmidt, Martin Schuessler, Rolf Jakoby
Presenter:
Sönke Schmidt, Technische Univ. Darmstadt, Germany
(9:00 - 9:20 )
Abstract
The calibration of a microfluidic microwave sensor
is a challenging field of research. While most of the existing
strategies still rely on information out of full wave simulations,
this work demonstrates an exact method to calibrate such a
sensor with only three transmission measurements of known
liquids. In this way, a closed formulation that directly maps S-parameters
to the complex permittivity value of the material
under test was found. Because this calibration scheme is based
only on transmission measurements it has potentially lower requirements
concerning the hardware implementation of a sensor.
The theory is validated with measurements of different aqueous
NaCl solutions as well as albumin solutions up to a frequency
of 10 GHz. It is demonstrated, that due to the accurate data
extraction small differences of 0,05 mol/l can be discriminated
very well. This corresponds to a change in permittivity of 0.6% while the error is in average 0.15%.
TH1A-5 :
Non-Contact PIM Measurement of Dielectric Wave Absorbers by Using a Metallic Resonator
Authors:
Shinji Ishiyama, Nobuhiro Kuga
Presenter:
Shinji Ishiyama, Yokohama National University, Japan
(9:20 - 9:40 )
Abstract
This paper proposes a non-contact PIM-measurement method for dielectric wave absorbers. It is shown experimentally that the PIM characteristics of a dielectric wave absorber can be measured in an open-ended coaxial tube by mounting a metallic resonator on the tested sample. An experimental result using a small piece of absorber is also presented to show that the PIM produced by dielectric absorbers is based on the electric-mode.
TH1B:
Advanced Passive Components
Chair:
Kamal Samanta
Chair organization:
Sony Corp.
Co-chair:
Guoan Wang
Co-chair organization:
Univ. of South Carolina
Location:
313A
Abstract:
This session consists of five papers on advanced transmission line and passive components. The papers are on joint feed network for composite SIW, SiGe transformer balun and impedance transforming balun, six pole quasi elliptic BPF, and miniaturized dual band rate-race coupler.
Presentations in this
session
TH1B-1 :
Joint Feeding Network for Mode Composite Waveguide
Authors:
Jiapin Guo, Ke Wu
Presenter:
Jiapin Guo, École Polytechnique de Montréal, Canada
(8:00 - 8:20 )
Abstract
In this paper, a joint feeding network within a triple layer topology is described and studied for mode composite waveguide (MCW). MCW consists of inner and outer dual waveguides, and this feeding network can independently excite the outer waveguide from the top and bottom layers, and the inner waveguide from the middle layer. The outer waveguide feeding structure consists of a multilayer power divider in series with a dual taper structure while the inner waveguide feeding structure consists of a right angle bend in series with a taper. This joint feeding scheme completely isolates the inner and outer waveguide feeding structures from each other, thus allowing an independent design and optimization of each feeding structure. The prototyped feeding network experimentally exhibits good matching within its operation bands from 6.9 to 11.8 GHz for the outer waveguide, and from 13.5 to 24.1 GHz for the inner waveguide.
TH1B-2 :
A 30–60 GHz SiGe Transformer Balun With Offset Radii Coils for Low Amplitude and Phase Imbalance
Authors:
Sudipta Chakraborty, Leigh Milner, Leonard Hall, Anthony Parker, Michael Heimlich
Presenter:
Sudipta Chakraborty, Macquarie Univ., Australia
(8:20 - 8:40 )
Abstract
Characterization of a wide-band transformer balun with low amplitude and phase imbalance is presented in this
paper. Excellent balance over a large bandwidth is achieved by adopting two new techniques for the transformer balun design, resulting in a very low amplitude imbalance of 0.12 dB and phase imbalance of less than 1deg over 30 to 60 GHz. The tradeoff between the insertion loss and the balance of the balun is investigated. First, the appropriate width of the primary and the secondary coils is selected for a reasonable insertion loss. Secondly, the radii of the primary and secondary coils were offset to reduce the parasitic coupling capacitance, thereby improving the balance of the differential signal. The balun is fabricated in 0.13 um SiGe technology. The balun is very compact with chip size of 0.2 mm x 0.145 mm.
TH1B-3 :
A 60-GHz Six-Pole Quasi-Elliptic Bandpass Filter With Novel Feeding Mechanisms Based on Silica-Based Post-Wall Waveguide
Authors:
Yusuke Uemichi, Osamu Nukaga, Kei Nakamura, Yuta Hasegawa, Xu Han, Ryouhei Hosono, Kiyoshi Kobayashi, Ning Guan
Presenter:
Yusuke Uemichi, Fujikura Ltd., Japan
(8:40 - 9:00 )
Abstract
This paper presents a 60-GHz six-pole quasi-elliptic bandpass filter (BPF) realized in silica-based post-wall waveguide (PWW). We also propose a novel feeding mechanism that can control external quality factor. The mechanism has several parameters for the control. The BPF with a 8.1% fractional bandwidth and a 1.1-dB insertion loss at 60 GHz is presented. The dimension of the BPF is 3.6mm by 5.4mm.
TH1B-4 :
Lumped Element Balun With Inherent Complex Impedance Transformation
Authors:
Markus Frank, Mattias Thorsell, Peter Enoksson
Presenter:
Markus Frank, Sato Techno Lab Europe, Sweden
(9:00 - 9:20 )
Abstract
A novel lumped design approach for complex impedance transforming baluns is presented in this paper. It is shown that a relaxation of symmetry in the T-networks of the out-of-phase-compensated-power-splitter enables complex impedance transformation. Design equations are analytically derived for a total of 4 component values, of which 2 values depend upon the 2 other, which are free variables. The two free component values are used independently for adjustment of input reflection loss, further keeping the balance parameter maximally flat and independent of the load impedance. For Q-values of source and load, not being excessively high, the balun can be realized with only 8 components. A demonstrator is fabricated, transforming 26.9+j11.1 Ohm to 73.8+j38.6 Ohm. An amplitude balance of +/-0.7 dB and phase balance better than +/-5 deg is achieved over a 20 % bandwidth. The return loss is higher than 20 dB.
TH1B-5 :
Design of Dual-Band -90 Degree/+90 Degree Transmission Lines for Miniaturized Dual-Band 1:4 Rat-Race Couplers
Authors:
Chih-Chun Chang, Yen-Hsiu Wei, Kuo-Sheng Chin
Presenter:
Chih-Chun Chang, Chang Gung Univ., Taiwan
(9:20 - 9:40 )
Abstract
This paper presents a dual-band −90 degree/+90 degree transmission line for the miniaturization of dual-band rat-race couplers. This line was constructed using two diagonally end-shorted coupled-line sections tapped by open stubs at their center. The proposed structure has the advantages of −90 degree/+90 degree electrical lengths at two arbitrary frequencies and high equivalent characteristic impedances, enabling the creation of small couplers that have a large power-split ratio of up to 1:32. Using the proposed structure, a rat-race coupler operated at 2.4/5.1 GHz with a power-split ratio of 1:4 was fabricated for demonstration. This circuit occupies only 44% of the area of existing dual-band rat-race couplers.
TH1C:
MEMS Components and Technologies
Chair:
Joachim Oberhammer
Chair organization:
Royal Institute of Technology
Co-chair:
Venkata Chivukula
Co-chair organization:
Bosch Research
Location:
313B
Abstract:
Recent advances in RF microelectromechanical and micromachined component technology, demonstrating novel approaches for tunable oscillators, filters, and delay lines. These MEMS component technologies demonstrate excellent insertion loss, high frequency performance, and low phase noise - enabling significant system performance advantages over conventional technologies.
Presentations in this
session
TH1C-1 :
A 19–40 GHz Bi-Directional MEMS Tunable All Silicon Evanescent-Mode Cavity Filter
Authors:
ZhengAn Yang, Dimitrios Peroulis
Presenter:
ZhengAn Yang, Purdue Univ., United States
(8:00 - 8:20 )
Abstract
This paper presents, for the first time, a new tuning technology based on bi-directional MEMS actuators for high-quality all-silicon evanescent mode cavity filters. Such bi-directional tuna-bility provides a feasible solution to restore frequency tunability from degradation caused by aging effects such as creep and stress relaxation. The fabricated proof-of-concept filter demon-strates a measured tuning range from 18.9 to 39.6 GHz, in which the forward (main) actuation tunes from 21.3 to 39.6 GHz with 120 V and the reverse (corrective) actuation tunes from 21.3 down to 18.9 GHz with 2 V. The measured filter insertion loss varies from 3.14 to 0.78 dB and its instantaneous bandwidth from 0.31 to 1.81 GHz. The unloaded quality factor is extracted as 265-510 which is comparable to the state-of-the-art filter of this type employing conventional uni-directional tuners.
TH1C-2 :
3D Micro-Fabricated High-Q 140 GHz Filter
Authors:
Francois David, Claire Dalmay, Matthieu Chatras, Arnaud Pothier, Ludovic Carpentier, Luc Lapierre, Pierre Blondy
Presenter:
Francois David, Xlim - CNRS- Unversite De Liroges, France
(8:20 - 8:40 )
Abstract
This paper introduces a new fabrication process for the realization of cavity resonators and band pass filters, using additive micro fabrication. 3D air-filled structures with a 200 µm thickness are obtained by using successive electroplating. Thanks to this fabrication process, a 140 GHz cavity resonator with an unloaded quality factor of 512 has been fabricated. A Four-pole band pass filter at 140 GHz, with a 3.1% bandwidth at -3 dB, and measured 3.7 dB in-band loss. Measurements are in good agreement with HFSS simulations without any post-processing tuning.
TH1C-3 :
High Resolution MEMS-Based Switched Delay Lines
Authors:
Farzad Yazdani, Raafat Mansour
Presenter:
Farzad Yazdani, Univ. of Waterloo, Canada
(8:40 - 9:00 )
Abstract
This paper presents a novel approach to tunable delay lines to address the demand for high resolution tunable delay lines for full duplex transceivers. The proposed design is capable to utilize minimum number of switches to achieve a group delay resolution of 33 picoseconds. Simulation and meas-urements are in close agreement and their negligible discrepancies are justified. The proposed design has wide applications in ana-log RF interference cancelation, analog signal processing (ASP), and antenna beamforming.
TH1C-4 :
Very-Low Phase Noise RF-MEMS Reference Oscillator Using AlN-on-Si Resonators Achieved by Accurate Co-Simulation
Authors:
Johannes Stegner, Uwe Stehr, Matthias Hein, Cheng Tu, Joshua Lee
Presenter:
Johannes Stegner, Technische Universität Ilmenau, Germany
(9:00 - 9:20 )
Abstract
Reference oscillators are crucial hardware components of radio-frequency receivers as their performance directly affects the system performance. In GHz applications, e.g., 4G/5G, a low error-vector magnitude is required, which is strongly affected by the phase noise of the reference oscillator. This paper reports the design, simulation, and measurement of a MEMS oscillator with very low phase noise, which is suitable for use as reference oscillator in RF receivers. While the MEMS device is a plate-shaped contour-mode resonator in an aluminium-nitride-on-silicon technology, the active part of the oscillator is implemented in 180nm CMOS. By adding the parasitic effects of the assembly, gained from measurements of the submodules, the simulation and measurement results show good agreement: 3dB deviation in the noise floor of -142dBc/Hz. The phase-noise level of the oscillator at an offset of 1kHz from the operating frequency of 256MHz is -112dBc/Hz, among the lowest values reported for MEMS-based RF oscillators.
TH1C-5 :
A 150 MHz Voltage Controlled Oscillator Using Lithium Niobate RF-MEMS Resonator
Authors:
Ali Kourani, Yongha Song, Brandon Arakawa, Ruochen Lu, Junfeng Guan, Anming Gao, Songbin Gong
Presenter:
Ali Kourani, Univ. of Illinois at Urbana-Champaign, United States
(9:20 - 9:40 )
Abstract
This paper presents the first radio frequency (RF) voltage controlled MEMS oscillator (VCMO) using a high Q Lithium Niobate (LiNbO3) micromechanical resonator. The resonator has a quality factor of 650 in air with a motional impedance of 262 Ω. The oscillator’s measured phase noise is -84.4 dBc/Hz and -146 dBc/Hz at 1 kHz and 1 MHz offsets respectively from a 149.13 MHz carrier with an output power of -8.6 dBm. The oscillator consumes less than 1 mA with a tuning range of 0.42 MHz. Such VCOs are envisioned for low power, and low phase noise RF signal synthesis for Internet of Things applications.
TH1D:
Nathan Sokal and the Class-E Amplifier
Chair:
Frederick Raab
Chair organization:
Green Mountain Radio Research LLC.
Co-chair:
Andrey Grebennikov
Co-chair organization:
Sumitomo Electric Europe
Location:
313C
Abstract:
Nat Sokal, inventor of the class-E amplifier, passed away on May 8, 2016. This session is a combination of personal recollections and an overview of the class-E amplifier and its applications. The presentations will be made by people who have built on Sokal's work and in most cases worked with him personally. The presentations will be overviews of the history of class E, applications at LF to VHF, applications at UHF and microwave, and applications to power conversion.
Presentations in this
session
TH1D-1 :
Recollections of Nathan Sokal
Authors:
Frederick Raab
Presenter:
Frederick Raab, Green Mountain Radio Research, United States
(8:00 - 8:20 )
Abstract
Nathan O. Sokal is best known for introducing the class-E high-efficiency power amplifier to our RF/microwave community. This presentation recalls a bit of his history, as well as my recollections of interactions with him in developing power amplifiers. At the end of the presentation, the audience will be invited to add their own recollections.
TH1D-2 :
Early History of Switching-Mode Class-E Techniques for High-Efficiency Power Amplification
Authors:
Andrei Grebennikov
Presenter:
Andrei Grebennikov, Sumitomo Electric Europe, United Kingdom
(8:20 - 8:40 )
Abstract
Memorial session for Nat Sokal: This paper covers the early history of Class-E techniques up to the mid-1970s, beginning from some experimental results with detuned resonant circuits obtained in the late 1940s and early 1950s and illustrates some examples of theoretical design approaches and different circuit implementations of the high-efficiency vacuum-tube and transistor power amplifiers operating in Class-E mode using load networks with lumped elements
TH1D-3 :
Class-E Amplifiers and Applications at MF, HF, and VHF
Authors:
Arturo Mediano, Francisco Ortega
Presenter:
Arturo Mediano, University of Zaragoza, Spain
(8:40 - 9:00 )
Abstract
Class E amplifiers have been used in a very broad frequency range. This paper expose a general review of the basic application of class E amplifiers for lower frequencies (MF, HF, VHF), including typical components, applications, and results. The paper is oriented to the special session in memory of Nathan O. Sokal.
TH1D-4 :
Microwave Class-E Power Amplifiers
Authors:
Zoya Popovic, Jose A. Garcia
Presenter:
Zoya Popovic, Univ. of Colorado, United States
(9:00 - 9:20 )
Abstract
This paper reviews circuit architectures and demonstrated class-E power amplifiers in the UHF and microwave frequency range. Scaling class-E soft-switching operation to high frequencies presents a number of challenges, particularly in the control of parasitic reactances of the device and the circuit. Different approaches have been taken, from using parasitics of lumped elements to provide the correct fundamental and harmonic impedances in the UHF range, to transmission-line implementations at frequencies above 10GHz.
TH1D-5 :
Class-E Rectifiers and Power Converters
Authors:
Jose A. Garcia, Zoya Popovic
Presenter:
Jose A. Garcia, Univ. of Cantabria, Spain
(9:20 - 9:40 )
Abstract
This paper reviews the use of the Class-E topology for RF-to-DC and DC-to-DC power conversion. After covering its early history, the Class-E rectifier is introduced in the context of the time-reversal duality principle, to be then integrated with an inverter in the Class-E2 DC/DC converter. Recent examples of rectifier and power converter implementations at UHF and microwave bands are finally presented.
TH1E:
5G and Beyond for the Internet of Things
Chair:
Thomas Ussmueller
Chair organization:
Univ. of Innsbruck
Co-chair:
Jasmin Grosinger
Co-chair organization:
Graz Univ. of Technology
Location:
314
Abstract:
5G is a commonly used term describing the next generation of mobile wireless systems. The development goal of 5G systems include higher data rates, new frequency bands, improved spectral efficiency and a significant increase of connected devices. One of the focus points of the development towards 5G systems is the Internet of Things. Billions of devices, ranging from cars over manufacturing equipment to wearables and household appliances, will be wirelessly connected to the Internet. These devices may incorporate sensors to measure pressure, temperature, or stress. Often, these devices are operated from a battery or through energy harvesting and thus require a very high energy efficiency for the data transmission. This session covers technologies to achieve the goal of billions of connected devices in the Internet of Things. The addressed technologies include but are not limited to novel energy efficient system concepts, backscatter microwave systems and long range, low bitrate wireless systems.
Presentations in this
session
TH1E-1 :
Fast Two Dimensional Position Update System for UHF RFID Tag Tracking
Authors:
Lukas Görtschacher, Jasmin Grosinger, Hasan Khan, Wolfgang Bösch
Presenter:
Lukas Görtschacher, Graz Univ. of Technology, Austria
(8:00 - 8:20 )
Abstract
This paper presents a novel and efficient system for tracking of passive ultra high frequency (UHF) radio frequency identification (RFID) tags based on the phase difference of arrival technique. All required information for a tag position update is captured within only one communication cycle between a UHF RFID reader and a tag. The system provides two dimensional position updates that allows the tracking of a tag on arbitrary tracks. The current tag position is calculated analytically based on a specific bistatic reader antenna arrangement. Initial verification measurements in a realistic application environment show mean absolute errors of 8.4 cm and 1.3 cm for the x-coordinate and the y-coordinate, respectively.
TH1E-2 :
Zero-Power, Long-Range, Ultra Low-Cost Harmonic Wireless Sensors for Massively Distributed Monitoring of Cracked Walls
Authors:
Valentina Palazzi, Federico Alimenti, Paolo Mezzanotte, Giulia Orecchini, Luca Roselli
Presenter:
Valentina Palazzi, Univ. of Perugia, Italy
(8:20 - 8:40 )
Abstract
A novel zero-power wireless crack sensor based on the harmonic radar principle is presented. The tag, fabricated
on a paper substrate by means of the copper tape technology, is targeted for a fundamental frequency f0=2.45 GHz (ISM band) and consists of a system of two nested annular slots, a frequency doubler and a stub behaving as a band-stop filter. In presence of a crack the stub, placed a the input of the doubler, is torn off and an alarm is sent to the receiver. Such a system is suitable for scenarios involving a massively distributed population of cracked wall sensors, where it is of interest to detect any crack increase. A wireless experiment demonstrates an operating range of the sensor from 1 to 5 m for a transmitted power EIRP of 25 dBm.
TH1E-3 :
Ambient FM Backscattering for Smart Agricultural Monitoring
Authors:
Spyridon-Nektarios Daskalakis, John Kimionis, Ana Collado, Manos Tentzeris, Apostolos Georgiadis
Presenter:
Spyridon-Nektarios Daskalakis, Heriot-Watt Univ., Greece
(8:40 - 9:00 )
Abstract
Nowadays the measurement of moisture level in plants is critical for agriculture. One way to detect this is to measure the temperature difference between the leaf and the air. This paper introduces a novel wireless leaf temperature sensor that utilizes ambient FM backscattering for smart agricultural applications. The sensor is based on an ultra low power micro-controller, a sensor board and a RF front-end for wireless communication. The sensor communicates using backscatter radio principles on ambient FM station signals using FM0 modulation. The prototype featured an effective operation up to ranges of 0.5 m by backscattering sensor information at 50 bps and 500 bps using an ambient FM radio signal inside a laboratory setup. A high percentage of bits was clearly visible up to 2 m at 50 bps.
TH1E-4 :
Enabling a Constant and Efficient Flow of Wireless Energy for IoT Sensors
Authors:
Daniel Belo, Ricardo Correia, Pedro Pinho, Nuno Carvalho
Presenter:
Daniel Belo, Instituto De Telecomunicacoes, Portugal
(9:00 - 9:20 )
Abstract
This work describes the design of an energy efficient transmitter for wireless power transfer applications. The main objective is to power up, efficiently, an IoT sensor moving on a multipath environment. In this scenario a flexible transmitter will be operated in order to maintain a constant power delivery to the sensor, while maximizing both transmitter and receiver energy efficiency conversions. The mechanism operates on the basis of a backscatter circuit attached to the IoT sensor, creating a feedback link that feeds the transmitter with its Received Signal Strength (RSSI). Experimental results will be reported on a system working at 5.83 GHz for wireless power transfer and 3.45 GHz for the backscattering link.
TH1E-5 :
Quasi-Isotropic RF Energy Harvester for Autonomous Long Distance IoT Operations
Authors:
Marco Fantuzzi, Diego Masotti, Alessandra Costanzo, Massimo Del Prete
Presenter:
Marco Fantuzzi, Univ. di Bologna, Italy
(9:20 - 9:40 )
Abstract
A UHF energy harvesting unit, also comprising UWB communication function, is integrated in a low-profile, compact, unique device. The optimized collocation of two couples of dual linearly-polarized dipoles provides all-polarization receiving capability and a quasi-isotropic radiation, momentous features for RF energy harvesting applications. Activation distance of a commercial ultra-low power management unit is enhanced with respect to a corresponding single-rectenna case. The EM-based non-linear simulation of the entire system has shown its ability to rectify RF power incident from any direction, with activation distances always higher than 14.7 meters for any direction of arrival and up to 26 meters in the best-case condition. Implementation of the presented RF harvester is currently under development to verify real outdoor and indoor performance.
TH1F:
Sub-Millimeter Wave Signal Generation Techniques
Chair:
Ajay Poddar
Chair organization:
Synergy Microwave
Co-chair:
Danny Elad
Co-chair organization:
IBM Research - Haifa
Location:
315
Abstract:
This session deals with sub-millimeter wave low noise, wideband frequency generation techniques in CMOS technology for the applications in current and later generation communication systems.
Presentations in this
session
TH1F-1 :
A V-Band Low-Phase-Noise Low-Jitter Sub-Harmonically Injection-locked QVCO With High Quadrature Accuracy in 90-nm CMOS Process
Authors:
Chun-Ching Chan, Gun-Lin Huan, Hong-Yeh Chang
Presenter:
Hong-Yeh Chang, National Central Univ., Taiwan
(8:00 - 8:20 )
Abstract
A V-band CMOS sub-harmonically injection-locked quadrature voltage-controlled oscillator (SILQVCO) is presented using 90-nm CMOS process in this paper. A transformer coupled topology is employed in the SILQVCO to enhance locking range and operation frequency. The measured free-running oscillation frequency is from 56.6 to 59 GHz with a tuning range of 2.4 GHz. With one-third sub-harmonic injection, the SILQVCO features an overall locking range of 3.5 GHz, a phase noise of -126.8 dBc/Hz at 1-MHz offset, and a RMS jitter of 54 fs integrated from 1 kHz to 40 MHz. The measured quadrature phase error and amplitude error are 0.32° and 0.26 dB, respectively. As compared with the prior art, this work has the best finger of merits in the millimeter-wave band.
TH1F-2 :
A 210 GHz Triple-Push Oscillator in 90 nm CMOS
Authors:
Cuei-Ling Hsieh, Jenny Yi-Chun Liu
Presenter:
Cuei-Ling Hsieh, National Tsing Hua Univ., Taiwan
(8:20 - 8:40 )
Abstract
A compact millimeter-wave oscillator in 90nm CMOS is presented. The proposed triple-push three-stage mutually coupled ring oscillator architecture significantly enhances the phase noise, out-put power, and power consumption. The measured phase noise is -114dBc/Hz at 10MHz offset with 28.6mW DC power consumption. The tuning range spans from 204.3GHz to 215GHz with the maximum output power of -7dBm at 210.8GHz. The FOM is -185.8dBc/Hz at 10MHz offset, and it remains below -179dBc/Hz within the entire tuning range.
TH1F-3 :
A D-Band Wide Tuning Range VCO Using Switching Transformer
Authors:
Yu-Teng Chang, Hsin-Chia Lu
Presenter:
Yu-Teng Chang, National Taiwan Univ., Taiwan
(8:40 - 9:00 )
Abstract
In this paper, we propose a wide tuning range
CMOS voltage control oscillator (VCO) at D band. In order to
increase tuning range, we adopt switching transformer to change
coupling coefficient. In addition, we cascade this 70 GHz VCO
with frequency doubler to double frequency to 140 GHz.
Combined-metal technique is used to improve Q of passive
components and reduce insertion loss of transmission line for
better phase noise. VCO tuning range is 14.5 % which is from
122.9 to 142.9 GHz. At 142 GHz, peak output power and peak
efficiency is -2 dBm and 1.74 %, respectively. Phase noise is
better than -96.5 dBc/Hz at all tuning frequency. The total DC
power consumption is only 51 mW for 1 V supply voltage. To our
best knowledge this VCO has wide tuning range and good DC to
RF efficiency at D-band.
TH1F-4 :
36% Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology
Authors:
Johannes Rimmelspacher, Robert Weigel, Amelie Hagelauer, Vadim Issakov
Presenter:
Johannes Rimmelspacher, Univ. Erlangen-Nürnberg, Germany
(9:00 - 9:20 )
Abstract
This paper presents a millimeter-wave (mm-wave) push-push voltage-controlled oscillator (VCO) in a 45 nm RF SOI CMOS technology. The circuit aims to meet specifications for FMCW radar applications requiring an ultra-wide PLL modulation bandwidth. The fundamental output of the VCO can be tuned from 27 GHz to 39 GHz, which corresponds to a frequency tuning range (FTR) of 36 %. We extract the 2nd harmonic in a non-invasive way using transformer. The measured phase noise (PN) at 1 MHz offset from the fundamental carrier varies across the tuning range from -100 dBc/Hz to -90 dBc/Hz. The VCO including output buffers dissipates 65 mW DC power from a single 1 V supply and consumes a chip area of 0.12 mm2.
TH1G:
Advanced Wireless Sensors
Chair:
Nils Pohl
Chair organization:
Ruhr Univ. Bochum
Co-chair:
Lora Schulwitz
Co-chair organization:
MDA Information Systems
Location:
316A
Abstract:
Electromagnetic waves and their scattering effects enable many sensor principles for contactless sensing and wireless data transmission. The first two papers use radar principles for sensing. The first paper is measuring displacements, whereas soil permittivity in the ground is done in the second paper. Afterwards the third paper uses frequency-scanning antennas for 3D tomography. The next paper uses near field antenna coupling for proximal field sensing and final the last papers presents a sensor node realized using 3D printing for the realization including the antenna and a wireless data interface.
Presentations in this
session
TH1G-1 :
Displacement Monitoring System Based on a Quadrature Self-Injection-Locked Radar Technology
Authors:
Fu-Kang Wang, Sheng-Chao Su, Mu-Cyun Tang, Tzyy-Sheng Horng
Presenter:
Fu-Kang Wang, National Sun Yat-sen Univ., Taiwan
(8:00 - 8:20 )
Abstract
This paper presents a quadrature self-injection-locked (SIL) radar to detect the displacement of a moving subject. Owing to the quadrature phase-switching architecture and corresponding digital signal processing techniques, this proposed system is capable of achieving excellent detection sensitivity and determining the target’s Doppler phase shift without being affected by nonlinear distortion caused by the SIL phenomenon. In the experiment, a metal plate is driven by a laptop-controlled linear stage, and a 2.4-GHz ISM-band prototype is placed 1.25 m away from the target to detect its motion. As a result, the measured error is less than 3 mm for the moving plate with a peak-to-peak displacement up to 5 cm.
TH1G-2 :
Ground Penetrating Synthetic Aperture Radar Imaging Providing Soil Permittivity Estimation
Authors:
Christoph Baer, Sergio Gutierrez, Jan Barowski, Jochen Jebramcik, Felix Vega, Ilona Rolfes
Presenter:
Christoph Baer, Ruhr Univ. Bochum, Germany
(8:20 - 8:40 )
Abstract
In this paper a combined Ground Penetrating Radar (GPR) and Synthetic Aperture Radar (SAR) technique is introduced, which considers the soil surface refraction and the wave propagation in the ground. By using Fermat’s principle and the Sober operator, the SAR image of the GPR data is optimized, whereas the soil’s permittivity is estimated. The theoretical approach is discussed thoroughly and measurements that were carried out on a test sand box verify the proposed technique.
TH1G-3 :
Metamaterial Leaky Wave Antenna Enabled Efficient 3D Spectrally-Encoded Microwave Tomography Using Linear Sampling Method
Authors:
Mehdi Salarkaleji, Mohammadreza Eskandari, Jimmy Ching-Ming Chen, Chung-Tse (Michael) Wu
Presenter:
Mehdi Salarkaleji, Wayne State University, United States
(8:40 - 9:00 )
Abstract
The linear sampling method (LSM) is an effective method to detect complicated structures in a short time. In this paper, we develop a novel kind of LSM by means of metamaterial (MTM) leaky wave antennas (LWAs) to conduct spectrally-encoded three-dimensional (3D) microwave tomography that can recon-struct a conductive target with coaxial multi-layer and various diameter cylinders. The unique frequency-space mapping fea-ture of MTM LWAs enables an efficient 3D microwave imaging with a larger field of view compared with conventional LSM approaches that usually operate at one single frequency. Vali-dated through both theoretical analysis and experimental re-sults, the proposed MTM imaging scheme allows us to recon-struct 3D shapes effectively with minimal prior knowledge of the target and computational resources. Furthermore, the meas-ured results verify the proposed imaging method by successfully detecting the unknown targets with different shapes and loca-tions for the MTM LWAs operating at 1.8-3 GHz.
TH1G-4 :
Proximal-Field Radiation Sensors
Authors:
Amirreza Safaripour, Mohammed Reza Hashemi, Ali Hajimiri
Presenter:
Amirreza Safaripour, California Institute of Technology, United States
(9:00 - 9:20 )
Abstract
Proximal-Field Radiation Sensors (PFRS) are introduced as a new set of tools to enable extraction of far-field radiation properties of integrated antennas from the surface waves inside their dielectric substrates. These sensors allow self-characterization, self-calibration, and self-monitoring of the ra-diation performance for both printed circuit board (PCB) anten-nas and integrated circuit (IC) antennas without any need to additional test equipment. A PCB prototype consisting of two transmitting patch antennas and four integrated PFRS antennas is fabricated and tested to verify the concept and demonstrate the implemented sensors’ capabilities to capture the radiation prop-erties such as gain pattern, radiated polarization, and the steering angle of the antenna array as a few examples of radiation sensors applications.
TH1G-5 :
3D Inkjet Printed Disposable Environmental Monitoring Wireless Sensor Node
Authors:
Muhammad Fahad Farooqui, Atif Shamim
Presenter:
Atif Shamim, King Abdullah Univ. of Science and Technology, Saudi Arabia
(9:20 - 9:40 )
Abstract
We propose a disposable, miniaturized, moveable, fully integrated 3D inkjet-printed wireless sensor nodes for large area environmental monitoring applications. We show the wireless sensing of temperature, humidity and H2S levels which are important for two critical environmental conditions namely forest fires and industrial gas leaks. The temperature sensor has TCR of -0.018/°, the highest of any inkjet-printed sensor and the H2S sensor can detect as low as 3 ppm of gas. These sensors and an antenna have been realized on the walls of a 3D-printed cubic package which encloses the microelectronics developed on a 3D-printed circuit board. Hence, 3D printing and inkjet printing have been uniquely combined in order to realize a unique low-cost, fully integrated wireless sensor node. Field tests show that these sensor nodes can wirelessly communicate up to a distance of over 100m.
TH1H:
Advanced Biomedical Imaging Techniques
Chair:
Robert Caverly
Chair organization:
Villanova Univ.
Co-chair:
Natalia Nikolova
Co-chair organization:
McMaster Univ.
Location:
316B
Abstract:
This session covers diverse topics on biomedical imaging techniques, including microwave thermometry for internal body temperature monitoring, microwave and millimeter-wave imaging of human tissue, as well as magnetic resonance imaging and nuclear magnetic resonance imaging.
Presentations in this
session
TH1H-1 :
MIMO-SAR Based Millimeter-Wave Imaging for Contactless Assessment of Burned Skin
Authors:
Daniel Oppelt, Julian Adametz, Jannis Groh, Ole Goertz, Martin Vossiek
Presenter:
Daniel Oppelt, Friedrich-Alexander-Univ. Erlangen-Nürnberg, Germany
(8:00 - 8:20 )
Abstract
The rapid and accurate assessment of burn injuries is a very challenging task in burn surgery. To illustrate the potential of millimeter-wave systems for burn diagnosis, the current paper at first shows a coaxial probe based ex-vivo measurement of the effective relative permittivity of skin depending on the degree of burn and also in-vivo measurements of the relative permittivity change caused by small skin irritation (i.e., increased or decreased blood perfusion, edema formation) in the frequency range 0.1 to 50 GHz. Based on the presented relation between skin condition, frequency, permittivity and loss, a MIMO-SAR imaging system operating at 75 GHz is introduced that facilitates a near real-time skin diagnosis. A skin model based on ex-vivo porcine skin is utilized to image the stepwise increased degree of a burn wound. In addition, for the first time in-vivo imaging results of normal and irritated human skin are presented.
TH1H-2 :
Non-Invasive Microwave Thermometry of Multilayer Human Tissues
Authors:
Parisa Momenroodaki, William Haines, Zoya Popovic
Presenter:
Parisa Momenroodaki, Univ. of Colorado, United States
(8:20 - 8:40 )
Abstract
In this paper, radiometry measurements of human tissue layer phantom temperature are presented. A skin-fat-muscle phantom allows independent heating/cooling of the lowest layer. A narrowband probe is designed specifically for that tissue stack-up and a sensitive radiometer is used for measuring total radiometric power in the 1.4-GHz quiet band. The knowledge of the volume power loss density from the probe, obtained from full-wave simulations, is used to determine the tissue weighting functions, which in turn allows for estimating black-body power radiated from a specific buried layer. Measured data using a Dicke radiometer shows that the radiometer tracks the internal tissue temperature.
TH1H-3 :
An Experimental Comparison Between the Born and Rytov Approximations in Microwave Tissue Imaging
Authors:
Daniel Tajik, Denys Shumakov, Natalia Nikolova
Presenter:
Daniel Tajik, McMaster Univ., Canada
(8:40 - 9:00 )
Abstract
Microwave holography is a direct inversion algorithm that shows promise for use in real-time near-field tissue imaging. However, the methodology depends on the linearization of the scattering problem which, in reality, is nonlinear. Therefore, the choice of the linearization method significantly impacts the reconstruction output of holography. Two linearization strategies,
the Born and the Rytov approximations, are explored. To analyze their fidelity, the approximations are applied to tissue-imaging problem. Results suggest that the Rytov approximation is advantageous in tissue imaging.
TH1H-4 :
Automatic RF Leakage Signal Canceler in MRI Applications
Authors:
Sung-Min Sohn, Michael Garwood, John Thomas Vaughan
Presenter:
Sung-Min Sohn, Univ. of Minnesota, Twin Cities, United States
(9:00 - 9:10 )
Abstract
This work presents the feasibility demonstration of an automatic RF leakage cancelling circuit for a simultaneous transmit and receive (STAR) system for magnetic resonance imaging (MRI) applications. The automatic system with wireless control enables a radiofrequency (RF) coil to achieve greater than 40 dB decoupling between transmit and receive ports with 900 ms resolution. The system stability and noise contribution to MR images were evaluated. To demonstrate feasibility of this approach, a NMR MR image was acquired by transmitting an RF excitation pulse and acquiring an MR receive signal simultaneously on a 4-tesla (T) MRI scanner.
TH1H-5 :
10.5-T MRI Volume Excitation Using Traveling-Wave Microstrip Probes
Authors:
Patrick Bluem, Zoya Popovic
Presenter:
Patrick Bluem, Univ. of Colorado, United States
(9:10 - 9:20 )
Abstract
This paper presents a study of a volume excitation of a human-sized MRI bore at 10.5\,T using a circular patch, an interdigitated capacitor probe (ICP) array, and a combination of the two. Compared to an experimentally verified single patch probe excitation, the ICP array allows for |B1+| shimming by modifying the magnitude and phase of the elements to fill the field void left near the edges of an uniform phantom. Simulations using full-wave FDTD show an increase in field coverage inside of the uniform phantom which can further be improved by the addition of a simple, passive slow-wave helical boundary structure.
TH1H-6 :
Time Domain Measurement of Electron Spin Relaxation at High Fields and Dynamic Nuclear Polarization at Sub-Millimeter Wavelengths
Authors:
Thierry Dubroca, Xiaoling Wang, Johannes McKay, Johan van Tol
Presenter:
Johan van Tol, Florida State Univ., United States
(9:20 - 9:30 )
Abstract
Here we describe a 395 GHz pulsed electron paramagnetic reso-nance (EPR) setup, and initial results of relaxation measurements and cw EPR at these frequencies in samples used for liquid- and solid-state nuclear magnetic resonance enhanced by dynamic nuclear polarization (DNP). Depending on the amount of spin–orbit coupling, the spin lattice relaxation becomes significantly faster at higher fields and frequencies, which has consequences for some DNP applications at high fields and frequencies. We will discuss the requirements for (sub)millimeter-wave sources and components for DNP and pulsed EPR at even higher frequencies and fields, as even higher magnetic fields will become available in the near future.
TH1I:
Advanced Radar Integrated Circuits and Applications
Chair:
Arne Jacob
Chair organization:
Technical Univ. of Hamburg
Co-chair:
Chris Rodenbeck
Co-chair organization:
Naval Research Laboratory
Location:
316C
Abstract:
Advances in integrated silicon circuits for radar through D-Band are introduced. Linearization and localization techniques are addressed are included.
Presentations in this
session
TH1I-1 :
A D-Band Fully-Differential Quadrature FMCW Radar Transceiver With 11 dBm Output Power and a 3-dB 30-GHz Bandwidth in SiGe BiCMOS
Authors:
Muhammad Furqan, Faisal Ahmed, Klaus Aufinger, Andreas Stelzer
Presenter:
Muhammad Furqan, Johannes Kepler Univ. Linz, Austria
(8:00 - 8:20 )
Abstract
This paper presents a fully-integrated D-band bistatic frequency-modulated continuous-wave radar transceiver (TRX) chip based on 130nm SiGe BiCMOS technology. The TRX chip consists of an active IQ modulator and an IQ downconversion mixer. It is based on a x6 frequency multiplier chain. The entire chip is optimized for wideband operation. The TRX chip and the circuit break-outs are characterized on wafer. The TRX chip demonstrates state-of-the art performance with a peak output power of 11 dBm and a 3-dB bandwidth of 30 GHz. The on-chip receiver provides a measured conversion gain of around 15 dB and a simulated minimum noise figure of 8 dB, with a 1-dB input compression point of -7.5 dBm. The IQ receiver shows a good balanced behavior with an average amplitude imbalance of 0.5 dB and a phase variation from 93 to 98 throughout the 3-dB bandwidth. The chip consumes total DC power of 825 mW.
TH1I-2 :
A 60 GHz SiGe BiCMOS Monostatic Transceiver for Radar Applications
Authors:
Efe Öztürk, Dieter Genschow, Uroschanit Yodprasit, Berk Yilmaz, Dietmar Kissinger, Wojciech Debski, Wolfgang Winkler
Presenter:
Efe Öztürk, Silicon Radar GmbH, Germany
(8:20 - 8:40 )
Abstract
This paper presents a 60GHz monostatic transceiver system for FMCW radar applications. The IC occupies a very compact area of 1.42x0.72mm² and is fabricated in a 250/340GHz fT/fmax of 0.13µm SiGe BiCMOS technology with a total current consump-tion of 190mA from a single supply of 3.3V. The fully differential transceiver employs an I/Q receiver with 17dB conversion gain and -20dBm input 1dB compression point and a transmitter with 8.2dBm output power with a 3-bit push-push voltage-controlled oscillator integrated to a divide-by-32 block for external PLL operations. The single antenna output functionality is guaranteed by the tunable high isolation coupler integrated to TX/RX chan-nels. Additionally, two power detectors monitoring transmitted and reflected powers on TX channel through a branch-line-coupler are designed as built-in-self-test blocks. The successful real-time measurement results indicate that the proposed monostatic transceiver system is able to detect obstacles above 90m and is well suited for 60GHz radar applications.
TH1I-3 :
Chirp-Partition Based Pre-Distortion for Reduced Carrier Leakage in Circulator-Based Wide-Band FMCW Radar Systems
Authors:
Adrian Tang, Yanghyo Kim, Li Du, Theodore Reck, Mau-Chung Chang
Presenter:
Adrian Tang, Jet Propulsion Lab, United States
(8:40 - 9:00 )
Abstract
This paper presents a digital pre-distortion scheme to reduce carrier-leakage in wideband FMCW radars that use a circulator to provide isolation between the transmitter and receiver. The proposed digital pre-distortion technique first power combines the leakage signal with a second pre-distorting signal prior to entering the radar receiver. The Phase & amplitude of this pre-distorting signal are adjusted for partitions of the FMCW chirp to provide cancellation. Transitions between sections are pulse shaped to eliminate broadband frequency content.
TH1I-4 :
High Dynamic Range Ku-Band CMOS Transceiver IC for FMCW Radar Application
Authors:
Seung Hwan Jung, Sang Gyun Kim, Woon Sung Choi, Hong Hee Kim, Hyeoung Geol Kim, Yun Seong Eo
Presenter:
Seung Hwan Jung, Silicon R&D;, Republic of Korea
(9:00 - 9:10 )
Abstract
This paper presents a Ku-band FMCW radar transceiver IC realized in 0.13 μm CMOS processes. In the radar receiver, a sensitivity time control using a DC offset cancellation feedback loop is employed, which preserves the receiver’s SNR not depending on the distance. The radar receiver achieves the full chain gain of 82 dB, P1dB of -2.0 dBm at the minimum gain, and noise figure of 7.9 dB with 106 dB dynamic range. The measured result of the radar transmitter reveals 9 dBm output power. The radar transceiver consumes 115 mA from a 1.2-V power supply. With the aid of an external PLL, the Ku-band FMCW radar module is implemented and verified radar func-tion by measuring the distance of various objects.
TH1I-5 :
Linearity Improvement Method of Fast-Chirp Signal for PLL by Using Frequency Detector and Division Ratio Modification
Authors:
Osamu Wada, Hiroyuki Mizutani, Hideyuki Nakamizo, Kenichi Tajima
Presenter:
Osamu Wada, Mitsubishi Electric Corp., Japan
(9:10 - 9:20 )
Abstract
A linearity improvement method of a fast-chirp signal for a PLL by using a frequency detector and a division ratio modification is proposed. A fast-chirp signal generated by the PLL is distorted by its transient characteristic. The proposed method measures a frequency difference between the output and an ideal signal, and it modifies the division ratio of the PLL from the measurement result. An iteration of the modification of the division ratio in the proposed method enables higher linearity improvement. Experi-mental results show that the maximum frequency error decreases by 90.3% after 3 times of iteration compared to that without the proposed method. Measured chirp linearity L, which is defined as division of the maximum frequency error by a modulation speed is 0.93μs.
TH1I-6 :
Smart Communication and Relative Localization System for Firefighters and Rescuers
Authors:
Fabian Lurz, Simon Mueller, Stefan Lindner, Sarah Linz, Markus Gardill, Robert Weigel, Alexander Koelpin
Presenter:
Fabian Lurz, Friedrich-Alexander-Univ. Erlangen-Nürnberg, Germany
(9:20 - 9:30 )
Abstract
This paper presents a smart communication system for simultaneous data reception and direction of arrival estimation for firefighters, rescuers, and other emergency personnel. The system consists of a passive six-port microwave interferometer which transforms the challenge of an accurate phase measurement for direction estimation to a relative power measurement. This can be easily realized by the readout of the received signal strength indicator of low-cost commercial off-the shelf transceivers which are simultaneously used for communication. Due to the differential IQ structure the robustness of the system is enhanced, even for severe disturbance and interference, where it still can provide a relative angle of emergency team members to each other.
TH1I-7 :
Enhanced Angle Estimation Accuracy of Ultra Compact Radars Inspired by a Biomimetic Approach
Authors:
Patrik Grüner, Tobias Chaloun, Christian Waldschmidt
Presenter:
Patrik Grüner, Univ. of Ulm, Germany
(9:30 - 9:40 )
Abstract
The theoretical and experimental evaluation of using biomimetic antenna arrays (BMAAs) in an angle sensing radar system is presented. This ultra compact antenna system can enhance the angle estimation accuracy for radar systems which allow only small antenna separations due to the available space. A quality criterion will be given to indicate which BMAA parameters are necessary to achieve precise angle estimation accuracy. Radar measurements show a reduction in the RMS angle estimation error by a factor of 2 compared to conventional antennas of same size.
10:10 - 11:50
TH2A:
Novel Nonlinear Measurement Techniques for 5G Modulation Schemes
Chair:
Tibault Reveyrand
Chair organization:
Xlim - CNRS- Unversite De Liroges
Co-chair:
Isar Mostafanezhad
Co-chair organization:
Nalu Scientific
Location:
312
Abstract:
Non-linear characterization and measurements have become critical in testing and manufacturing 5G devices and particularly transmitter components such as PAs and MIMO arrays. In this session, we start with a new estimation method for the EVM merit criteria, then describe a complete IQ modulator characterization, a multiport load-pull technique for coupled power amplifiers, and finally a production test method for 5G massive MIMO array transmitters.
Presentations in this
session
TH2A-1 :
A Measurement-Based Error-Vector-Magnitude Model to Assess Nonlinearity at the System Level
Authors:
Yves Rolain, Maral Zyari, Evi Van Nechel, Gerd Vandersteen
Presenter:
Evi Van Nechel, Vrije Universiteit Brussels, Belgium
(10:10 - 10:30 )
Abstract
A measurement based Error-Vector-Magnitude (EVM) extraction and modeling is proposed to obtain a least squares estimate of the EVM for a class of modulted excitation signals sharing a common probability density function (pdf) and Power Spectral Density (PSD). The method splits the influence of the linear dynamic and the nonlinear distortion on the EVM. The dependence of the EVM on the input signal power is extracted and modeled. The inlfuence of the measurement noise on the measured EVM is compensated, reusltling in a clear improvement of the measured quantity. The results are validated on measurements obtained by a VSG-VSA measurement setup.
TH2A-2 :
Vector-Corrected Nonlinear Multi-Port IQ-Mixer Characterization Using Modulated Signals
Authors:
Sebastian Gustafsson, Mattias Thorsell, Koen Buisman, Christian Fager
Presenter:
Sebastian Gustafsson, Chalmers Univ. of Technology, Sweden
(10:30 - 10:50 )
Abstract
In this paper, large-signal operation of IQ-mixers is studied using a vector-corrected four-port measurement setup with wideband modulated signals as stimuli. The measurement setup presents unique characterization possibilities since it has two ports at low/baseband frequencies and two ports at RF, making it ideal for characterization of frequency-translating devices such as mixers. A commercial upconverting IQ-mixer is studied, with the I and Q input signals residing at incommensurate frequency grids, enabling separation of the nonlinear distortion generated in the I and Q branches. Frequency-domain and time-domain measurements reveal imbalances between the I and Q branches in terms of conversion gain and nonlinear distortion. It is also shown for the same mixer that operating the I and Q branches concurrently has limited influence on both conversion gain and nonlinear distortion, compared to non-concurrent operation.
TH2A-3 :
An Active Load-Pull Technique Creating Time-Variant Impedances to Emulate Coupling Between Power Amplifiers
Authors:
Dhecha Nopchinda, Koen Buisman
Presenter:
Dhecha Nopchinda, Chalmers Univ. of Technology, Sweden
(10:50 - 11:10 )
Abstract
A method for emulating antenna array coupling effects, based on active load-pull, to present time-varying impedances to power amplifiers (PA) is presented. An entire array, given identical elements, can be emulated using a single device-under-test (DUT). The method is demonstrated and verified by studying two scenarios, where the resulting adjacent channel power ratio (ACPR) and error-vector magnitude (EVM) are given as function of delay and coupling for a 6W GaN PA. Differences in ACPR and EVM can be attributed to time-variant load impedances.
TH2A-4 :
Over the Air Characterization for 5G Massive MIMO Array Transmitters
Authors:
Daniel Dinis, Nuno Carvalho, José Vieira, Arnaldo Oliveira
Presenter:
Daniel Dinis, Instituto De Telecomunicacoes, Portugal
(11:10 - 11:30 )
Abstract
This paper discusses the implementation of a solution to study over the air 5G Massive MIMO antenna transmitter arrays. The proposal is based on a multi-sine approach similar to what is being done to explore nonlinear devices. The approach followed is supported on a multi-sine waveform where each element on the array is excited by two tones, being one the common local oscillator, and the other a modulation with a single sinusoid (called a tickle tone). Since each element in the antenna is fed by a different modulated waveform, the overall structure can be evaluated remotely using a simple probe followed by a Vector Signal Analyser. By measuring each of the sines in the receiver stage, the change in amplitude and phase can give an initial approach to each of the transmitter element. The implementation of this solution will be discussed throughout this paper.
TH2B:
Advances in Non-Planar Filter Fabrication Techniques
Chair:
Miguel Laso
Chair organization:
Public Univ. of Navarre (UPNA)
Co-chair:
Simone Bastioli
Co-chair organization:
RS Microwave
Location:
313A
Abstract:
New fabrication techniques using new materials and processes for non-planar filters are demonstrated. This innovation will enable further miniaturization and high-level integration for future communication systems.
Presentations in this
session
TH2B-1 :
A 420 GHz Waveguide Filter Based on MEMS Technology
Authors:
Jianhang Cui, Caijie Ai, Yong Zhang, Jiang Hu, Bo Yan, Ruimin Xu
Presenter:
Jianhang Cui, @Pay LLC, China
(10:10 - 10:20 )
Abstract
In this paper, a waveguide bandpass filter applied to the terahertz frequency band is developed by using a high precision silicon-based Micro Electromechanical System (MEMS) fabrication process. The 420 GHz Iris Inductive Window Coupled Wave-guide Filter uses a circular resonator structure, solves the processing problem of the critical dimension of this type of filter. The measured results show that the insertion loss of the 420 GHz waveguide filter is 1.9 dB with the bandwidth 22 GHz.This circular resonant structure reduces the process requirements and improves the tolerance. The 420 GHz waveguide filter is simple and reliable, and can be applied to various terahertz circuits.
TH2B-2 :
Micromachined Multilayer Bandpass Filter at 270 GHz Using Dual-Mode Circular Cavities
Authors:
Oleksandr Glubokov, Xinghai Zhao, Bernhard Beuerle, James Campion, Umer Shah, Joachim Oberhammer
Presenter:
Oleksandr Glubokov, KTH Royal Institute of Technology, Sweden
(10:20 - 10:30 )
Abstract
We present a microfabricated sub-THz WR-3.4 bandpass filter using dual-mode circular cavity resonators. The filter operates at the center frequency of 270 GHz with fractional bandwidth of 1.85%; transmission zeros are introduced in the upper and lower stopband using a negative coupling. The microchip filter is significantly more compact than any previous designs at comparable frequencies, occupying less than 1.5 mm2. In contrast to any previous micromachined filter work, due to its axially arranged interfaces it can be directly inserted between two standard WR-3.4 rectangular-waveguide flanges, which vastly improves system integration as compared to previous micromachined filters; in particular no custom-made split-block design is required.
The measured average return loss in the passband is –18 dB and worst-case return loss is –15 dB; an insertion loss of only 1.5 dB was measured. xcellent agreement between measured and simulated data is facilitated by fabrication accuracy, design robustness and micromachined self-alignment geometries.
TH2B-3 :
A Compact CMOS Single-Ended-to-Balanced Bandpass Filter in Millimeter-Wave Band
Authors:
Yi-Ming Chen, Shih-Cheng Lin, Sheng-Fuh Chang, Hsin-Yen Yang
Presenter:
Yi-Ming Chen, National Chung Cheng Univ., Taiwan
(10:30 - 10:40 )
Abstract
This paper presents a compact 55-65 GHz single-ended-to-balanced bandpass filter in CMOS technology. The balanced bandpass filters is designed based on three coupled-line stepped-impedance microstrip line to obtain differential output phases and incorporated with the grounded pedestal stepped-impedance microstrip line to minimize the circuit size. For in-band rejection, it using the stepped-impedance open stub to generation high passband transmission zero. The measured insertion loss is less than 4.7 dB and the return loss is larger than 9 dB in 55-65 GHz. The power imbalance is less than 0.7 dB and the phase imbalance is less than 2˚. The chip size without pad is 0.293×0.136 mm2.
TH2B-4 :
Ceramic Q-Band Bandpass Filters by Laser Micro-Machining of Alumina Substrates
Authors:
Aurelien Perigaud, Khalil Drissi, Nicolas Delhote
Presenter:
Aurelien Perigaud, Xlim - CNRS- Unversite De Liroges, France
(10:40 - 10:50 )
Abstract
Two millimetre-wave filters (a Chebyshev 4-pole and a quasi-elliptical 6-pole 2 zeroes) centred at 39 GHz are presented in this paper. They are both obtained by laser machining Alumina substrates and metallized with an electroless Copper plating technique. Laser etching is finally used again to etch the different patterns required for their input and output as well as other features. Despite the simplicity of this method, good agreements are obtained between full wave simulations and measurements, validating the proposed approach.
TH2B-5 :
On-Chip mm-Wave Spherical Dielectric Resonator Bandpass Filter
Authors:
Daniel López Cuenca, Golzar Alavi, Jan Hesselbarth
Presenter:
Daniel López Cuenca, Univ. of Stuttgart, Germany
(10:50 - 11:10 )
Abstract
On-chip mm-wave dielectric resonator filters are presented. Low-loss alumina ceramic spheres resonating in a non-radiative mode are used as dielectric resonators. Accurate placement of the resonator spheres is ensured by precise etching of shallow crates in the back-end-of-line low-permittivity dielectric layers atop the semiconductor chip. The spheres are placed in and aligned by these crates. The multi-sphere filter is fed by on-chip microstrip lines. Coupling between microstrip line and sphere can be enhanced by quarter-wave on-chip microstrip resonators. A metallic plate atop the spheres and parallel to the chip holds the spheres in position and prevents radiation. Filters are fabricated on a standard silicon wafer with two metal layers on top, separated by BCB dielectric. Measurements of 3-pole filters at 65 GHz and 95 GHz show an insertion loss of 1.4 dB and 1.2 dB, for an impedance bandwidth of 3.5% and 3.9%, respectively.
TH2B-6 :
Waveguide Band-Pass Filter With Reduced Sensitivity to Fabrication Tolerances for Q-Band Payloads
Authors:
Fernando Teberio, Pablo Soto, Ivan Arregui, Txema Lopetegi, Santiago Cogollos, Israel Arnedo, Petronilo Martin-Iglesias, Vicente Boria-Esbert, Miguel Laso
Presenter:
Fernando Teberio, Public Univ. of Navarre (UPNA), Spain
(11:10 - 11:30 )
Abstract
A rectangular waveguide band-pass filter with very low sensi-tivity to fabrication tolerances is proposed. The novel filter exploits the inherent first passband replica of commensurate-line stepped-impedance low-pass filters. Waveguide width reduc-tion is also exploited to obtain a band-pass filter with a signifi-cant enhancement in the fabrication yield. This improvement is especially attractive for space applications in the millimeter-wave range. The validity of the novel design technique has been demonstrated with a 13th-order Chebyshev band-pass filter for Q-band payloads. The manufacturing yield of the novel filter has been dramatically improved when compared to the classical inductive-iris filter designed to fulfill the same frequency specifi-cations (92 % vs. 8 %, for a worst-case fabrication error of ± 25 µm). A prototype has been fabricated using milling tech-niques showing a very good agreement between simulated and measured results.
TH2B-7 :
28 GHz Wideband Filter Using Quartz Crystal Waveguide for Massive MIMO Antenna Unit
Authors:
Kengo Onaka, Hiroshi Kojima, Kei Matsutani, Atsushi Horita, Takaya Wada, Masayoshi Koshino, Makoto Kawashima, Norio Nakajima
Presenter:
Kengo Onaka, Murata Manufacturing Co., Ltd., Japan
(11:30 - 11:50 )
Abstract
Massive MIMO technology and mm-wave band are effective solution of a high data rate for 5G. This paper presents a novel 28GHz wideband filter for that antenna unit. To realize 10% fractional bandwidth, a new terminal configuration of V-shape structure is proposed. TEM-TE mode transition function using the new structure was analyzed, and the shape was optimized. Applying the new terminal structure to an 8-pole with 2 trap quartz waveguide filter, high performances such as very low loss of 1.2 dB, wide relative passband of 10.4% and high attenuation of more than 50dB were obtained with small size and SMD structure.
TH2C:
Recent Advances in Integrated Acoustic Devices
Chair:
Amelie Hagelauer
Chair organization:
Friedrich-Alexander-Univ. Erlangen-Nürnberg
Co-chair:
Clemens Ruppel
Co-chair organization:
TDK
Location:
313B
Abstract:
This session reports on advances in high-performance acoustic filters and devices, including BAW, SAW, and switchable ferroelectric-based FBAR filters. In addition, new measurement techniques to characterize the high-power performance of acoustic filters are discussed, along with design strategies for such devices, including a fast FEM simulation technique.
Presentations in this
session
TH2C-1 :
RF Design of Acoustic-Wave-Lumped-Element-Resonator-(AWLR)-Based Bandpass Filters With Constant In-Band Group Delay
Authors:
Dimitra Psychogiou, Roberto Gomez-Garcia, Dimitrios Peroulis
Presenter:
Dimitra Psychogiou, Univ. of Colorado, United States
(10:10 - 10:30 )
Abstract
This papers reports on the design of a new class of acoustic-wave-resonator-(AWR)-based bandpass filters (BPFs). Unlike conventional ladder- and lattice-type AWR architectures, it allows the realization of passbands with constant group delay (τg) and larger bandwidth (BW). The devised configuration makes use of N identical hybrid acoustic-wave lumped-element resonators (AWLRs)─each of them contributing to one pole and two transmission zeros (TZs)─and N+1 lumped-element imped-ance inverters. As an added benefit, it exhibits power transmis-sion response whose maximum realizable BW and τg flatness does not depend on the electromechanical coupling coefficient (kt2) of its constituent AWRs. For experimental-demonstration purposes, a UHF-band three-pole/six-TZ BPF prototype with in-band linear phase was designed, manufactured, and measured using commercially-available surface-acoustic-wave (SAW) resonators. Its measured characteristics are summarized as: BW of 0.3 MHz, insertion- and return-loss of 2.1 dB and 32 dB, respectively, effective quality factor Qeff of 9,000, and in-band τg between 1.78 ± 0.02 μs.
TH2C-2 :
Low Loss, 3.7GHz Wideband BAW Filters, Using High Power Single Crystal AlN-on-SiC Resonators
Authors:
Jeffrey Shealy, Ramakrishna Vetury, Shawn Gibb, Michael Hodge, Pinal Patel, Michael McLain, Alexander Feldman, Mark Boomgarden, Michael Lewis, Rohan Houlden, Brook Hosse
Presenter:
Ramakrishna Vetury, Akoustis, Inc., United States
(10:30 - 10:50 )
Abstract
Bulk acoustic wave (BAW) filters operating at center frequency of 3.7GHz, utilizing single crystal aluminum nitride (AlN) piezoelectric films grown on silicon carbide (SiC) substrates are reported. Metalorganic chemical vapor deposition (MOCVD) growth was used to obtain single crystal AlN films on 150-mm diameter SiC substrates with X-ray diffraction (XRD) rocking curve full-width half-maximum (FWHM) of 0.025°. Filters had a center frequency of 3.7GHz and 3dB bandwidth of 100MHz, and insertion loss of 2.0dB and narrow band rejection of 40dB and out-of-band rejection in excess of 37dB to 8GHz. Individual resonators show an electro-mechanical coupling as high as 7.63% and maximum Q-factor up to 1572 and survive high power 10W survival test. This is first demonstration of single crystal AlN-on-SiC based BAW technology at 3.7GHz and illustrates the potential for compact, high power and high performance filter solutions for high frequency mobile, Wi-Fi and infrastructure applications.
TH2C-3 :
Fabrication of a Low Insertion Loss Intrinsically Switchable BAW Filter Based on BST FBARs
Authors:
Milad Zolfagharloo Koohi, Seungku Lee, Amir Mortazawi
Presenter:
Milad Zolfagharloo Koohi, Univ. of Michigan, United States
(10:50 - 11:10 )
Abstract
A Low insertion loss (IL) intrinsically switchable bulk acoustic wave (BAW) filter based on the barium strontium titanate (Ba0.5Sr0.5TiO3) thin film bulk acoustic resonators (FBARs) is presented. A 1.5 stage ?-network ladder type switchable BST filter is designed and fabricated. The measured IL of the filter is 2.25 dB at 2.08 GHz center frequency. The 3 dB bandwidth of the filter is 58 MHz, and the minimum rejection level is 12 dB. The filter provides more than 15 dB of isolation between the input and the output ports, in its OFF state. The switchable BST filter presented in this paper provides the lowest IL as compared to the previously reported BST filters.
TH2C-4 :
Rapid 2D FEM Simulation of Advanced SAW Devices
Authors:
Julius Koskela, Victor Plessky, Panagiotis Maniadis, Patrick Turner, Balam Willemsen
Presenter:
Victor Plessky, GVR Trade SA, Switzerland
(11:10 - 11:30 )
Abstract
Modern high-performance SAW filters utilize thin-film technolo-gy to optimize losses, temperate stability, filter bandwidth, and manufacturing sensitivity. Fast design of these complicated struc-tures calls for accurate and more general simulation tools. The versatility of the finite element method (FEM) makes it attractive for this purpose. However, the application of FEM in the SAW field has been hampered by the associated very large memory requirements and excessive computation times. Here, we describe frequency-domain FEM simulation of SAW devices with the hierarchical cascading algorithm, including thermal effects. The method utilizes the periodic block structure, which is typical to SAW devices, to eliminate redundant calculations from FEM. The approach has all the advantages of FEM, with—for structures with high degree of periodicity—drastically reduced memory consumption and computation time.
TH2C-5 :
Rugged High-Power Mismatch Characterization of a High-Performance Band 41 FBAR Filter for LTE HPUE Applications
Authors:
Dylan Bespalko, Brice Ivira
Presenter:
Dylan Bespalko, Broadcom Corp., United States
(11:30 - 11:40 )
Abstract
An innovative high-power mismatch measurement is performed to validate the operation of a high-performance band 41 Film Bulk Acoustic Wave Resonator (FBAR) filter. The results demonstrate the operation of an FBAR filter at +33dBm input power and 10:1 VSWR mismatch, thereby successfully fulfilling the power requirements of the LTE High-Power User Equipment (HPUE) standard, while simultaneously testing all worst-case scenario mismatch conditions that might be presented by the antenna.
TH2C-6 :
Electromagnetic Simulation Workflow for RF Modules in the Age of LTE
Authors:
Guillermo Moreno, Alexandre Volatier, Gernot Fattinger, Sebastian Tanuz, Pedro Zayas
Presenter:
Guillermo Moreno, QORVO, Inc., United States
(11:40 - 11:50 )
Abstract
This paper describes a novel workflow for the electromagnetic (EM) simulation of radio frequency (RF) filters and modules for 4G mobile applications. Its main advantage is the automatic creation of complex EM simulation models, including simulation settings, allowing for shorter design cycles.
EM phenomena affect nearly every single aspect of the device performance, and can affect parameters isolation and cross-isolation, crucial for carrier aggregation.
The simulation workflow and the achieved accuracy are illustrated by means of an example, a module for 4G LTE-Advanced CA. The good agreement between simulation and measurement is shown for isolation and cross-isolation, demonstrating that all relevant EM effects contributing to the stop band performance were accurately captured by the EM model.
The progress done will allow the reduction of design cycles for RF modules, liberating the designer from tedious tasks, implementing the best practices for EM simulation and drastically reducing potential errors.
TH2D:
State-of-the-Art Technologies for Modeling, Optimization, and Tuning of Microwave Circuits
Chair:
Natalia Nikolova
Chair organization:
McMaster Univ.
Co-chair:
Qi-Jun Zhang
Co-chair organization:
Carleton Univ.
Location:
313C
Abstract:
The computer-based optimization and tuning is a vibrant research trend with tremendous impact on the wireless electronics industry. It has been a cornerstone of the activities of the Microwave Theory and Techniques Society for more than four decades. This session aims at highlighting the achievements in this field from the perspective of academia and industry.
Presentations in this
session
TH2D-1 :
A Historical Account and Technical Reassessment of the Broyden-Based Input Space Mapping Optimization Algorithm
Authors:
Jose Rayas-Sanchez
Presenter:
Jose Rayas-Sanchez, ITESO - The Jesuit University of Guadalajara, Mexico
(10:10 - 10:30 )
Abstract
The Broyden-based input space mapping (SM) algorithm, better known as the aggressive space mapping (ASM) algorithm, is revisited in this article. The most fundamental SM-based optimization methods developed until now, in which ASM is framed, are overviewed. More than two decades of ASM evolution are briefly accounted, evidencing its popularity in both academia and industry. The two main characteristics that explain its popularity are emphasized: 1) simplicity, and 2) efficiency (when it works, it works extremely well). The fundamentals behind the Broyden-based input SM algorithm are illustrated, accentuating key steps for its successful implementation, as well as typical scenarios where it may fail. Finally, some future directions regarding ASM are ventured.
TH2D-2 :
Circuit Optimization With X-Parameter Models
Authors:
Radoslaw Biernacki, Mihai Marcu, David Root
Presenter:
Radoslaw Biernacki, Keysight Technologies, United States
(10:30 - 10:40 )
Abstract
X-parameter modeling is now established as an indispensable methodology for accurate characterization and modeling of non-linear components and sub-circuits. However, important considerations may be overlooked when such models are used for optimizing the designs. This paper discusses circuit optimization issues when X-parameter models are employed. This includes the characterization and extraction requirements, interpolation and extrapolation issues, scaling, embedding, as well as potential modification of the components characterized by X-parameter data. Examples include amplifier and transistor designs for power delivered into the load, PAE and linearity performance criteria.
TH2D-3 :
Robust Optimization and Tuning of Microwave Filters and Artificial Transmission Lines Using Aggressive Space Mapping Techniques
Authors:
Ana Rodríguez, José Morro, Javier Ossorio, Jordi Selga, Marc Sans, Ferran Martín, Marco Guglielmi, Vicente Boria-Esbert
Presenter:
Vicente Boria-Esbert, Technical Univ of Valencia, Spain
(10:40 - 10:50 )
Abstract
Aggressive Space Mapping (ASM) techniques are widely used for the automated design of many passive microwave components. In this work we will show their practical application to the robust design and post-manufacturing tuning of waveguide filters, as well as to the automated synthesis of planar filters and passive devices based on semi-lumped elements and artificial transmis-sion lines. Efficiency and robustness, key issues in all these auto-mated procedures, will be also deeply considered.
TH2D-4 :
The Continued Quest for Optimal Microwave Design
Authors:
Wolfgang Hoefer
Presenter:
Wolfgang Hoefer, Univ. of Victoria, Canada
(10:50 - 11:00 )
Abstract
In the most general sense, the optimal design of a microwave component or system can be considered as an example of entropy reduction, which is the hallmark of a creative process. In this paper, we combine the pioneering concepts and procedures of design by iterative optimization, as developed by John Bandler and his associates, with the synthesis of optimal boundary profiles by monochromatic field injection. The combination of these complementary methodologies will be demonstrated by means of a simple waveguide bandpass filter design. The lifetime achievements and contributions of Professor John W. Bandler to the area of microwave design by optimization will be emphasized in this context at the occasion of his 75th birthday.
TH2D-5 :
Tuning Ports in the Middle of Resonators
Authors:
James Rautio
Presenter:
James Rautio, Sonnet Software, Inc., United States
(11:00 - 11:10 )
Abstract
Port tuning is a form of space mapping that allows rapid optimization of filters and other microwave circuits. An initial electromagnetic (EM) analysis of the filter with tuning ports insert-ed in all resonators is performed. Then circuit theory components (e.g., inductors, transmission lines) are connected to the tuning ports and filter optimization takes place at circuit theory speed with nearly full EM accuracy. Once a port tuning model is in place, design time can be reduced to almost zero. This paper discusses the effect of internal port calibration and illustrates the additional port tuning techniques allowed when good port calibration is available. While the technique can work in some cases without port calibration, the range, accuracy, and efficiency is vastly improved with good port calibration.